Preliminary Data Sheet
October 2004
AGR09045E
45 W, 865 MHz—895 MHz, N-Channel E-Mode, Lateral MOSFET
Introduction
The AGR09045E is a high-voltage, gold-metalized,
laterally diffused metal oxide semiconductor
(LDMOS) RF power transistor suitable for cellular
band, code-division multiple access (CDMA), global
system for mobile communication (GSM), enhanced
data for global evolution (EDGE), and time-division
multiple access (TDMA) single and multicarrier class
AB wireless base station amplifier applications. This
device is manufactured on an advanced LDMOS
technology, offering state-of-the-art performance,
reliability, and thermal resistance. Packaged in an
industry-standard CuW package capable of deliver-
ing a minimum output power of 45 W, it is ideally
suited for today's RF power amplifier applications.
Table 1. Thermal Characteristics
Parameter
Thermal Resistance,
Junction to Case:
AGR09045EU
AGR09045EF
Sym
Value
Unit
R
θJC
R
θJC
1.2
1.5
°C/W
°C/W
Table 2. Absolute Maximum Ratings*
Parameter
Drain-source Voltage
Gate-source Voltage
Drain Current—Continuous
Total Dissipation at T
C
= 25 °C:
AGR09045EU
AGR09045EF
Derate Above 25
°C:
AGR09045EU
AGR09045EF
Operating Junction Tempera-
ture
Storage Temperature Range
Sym Value
V
DSS
65
V
GS
–0.5, +15
I
D
4.25
P
D
P
D
—
—
T
J
146
117
0.83
0.67
200
Unit
Vdc
Vdc
Adc
W
W
W/°C
W/°C
°C
AGR09045EU (unflanged)
AGR09045EF (flanged)
T
STG
–65, +150 °C
Figure 1. Available Packages
Features
■
* Stresses in excess of the absolute maximum ratings can cause
permanent damage to the device. These are absolute stress rat-
ings only. Functional operation of the device is not implied at
these or any other conditions in excess of those given in the
operational sections of the data sheet. Exposure to absolute
maximum ratings for extended periods can adversely affect
device reliability.
■
■
■
■
■
■
Typical performance ratings are for IS-95 CDMA,
pilot, sync, paging, traffic codes 8—13:
— Output power (P
OUT
): 10 W.
— Power gain: 20 dB.
— Efficiency: 28%.
— Adjacent channel power ratio (ACPR) for
30 kHz bandwidth (BW):
(750 kHz offset: –45 dBc)
(1.98 MHz offset: –60 dBc).
— Input return loss: 10 dB.
High-reliability, gold-metalization process.
High gain, efficiency, and linearity.
Integrated ESD protection.
Si LDMOS.
Industry-standard packages.
45 W minimum output power.
Table 3. ESD Rating*
AGR09045E
HBM
MM
CDM
Minimum (V)
500
50
1500
Class
1B
A
4
* Although electrostatic discharge (ESD) protection circuitry has
been designed into this device, proper precautions must be
taken to avoid exposure to ESD and electrical overstress (EOS)
during all handling, assembly, and test operations. Agere
employs a human-body model (HBM), a machine model (MM),
and a charged-device model (CDM) qualification requirement in
order to determine ESD-susceptibility limits and protection
design evaluation. ESD voltage thresholds are dependent on the
circuit parameters used in each of the models, as defined by
JEDEC's JESD22-A114B (HBM), JESD22-A115A (MM), and
JESD22-C101A (CDM) standards.
Caution: MOS devices are susceptible to damage from elec-
trostatic charge. Reasonable precautions in han-
dling and packaging MOS devices should be
observed.
AGR09045E
45 W, 865 MHz—895 MHz, N-Channel E-Mode, Lateral MOSFET
Preliminary Data Sheet
October 2004
Electrical Characteristics
Recommended operating conditions apply unless otherwise specified: T
C
= 30 °C.
Table 4. dc Characteristics
Parameter
Off Characteristics
Drain-source Breakdown Voltage (V
GS
= 0, I
D
= 100 µA)
Gate-source Leakage Current (V
GS
= 5 V, V
DS
= 0 V)
Zero Gate Voltage Drain Leakage Current (V
DS
= 28 V, V
GS
= 0 V)
On Characteristics
Forward Transconductance (V
DS
= 10 V, I
D
= 1.0 A)
Gate Threshold Voltage (V
DS
= 10 V, I
D
= 400 µA)
Gate Quiescent Voltage (V
DS
= 28 V, I
DQ
= 450 mA)
Drain-source On-voltage (V
GS
= 10 V, I
D
= 1.0 A)
Table 5. RF Characteristics
Parameter
Dynamic Characteristics
Input Capacitance
(V
DS
= 28 Vdc, V
GS
= 0, f = 1 MHz)
Output Capacitance
(V
DS
= 28 Vdc, V
GS
= 0, f = 1 MHz)
Reverse Transfer Capacitance
(V
DS
= 28 Vdc, V
GS
= 0, f = 1 MHz)
C
ISS
C
OSS
C
RSS
—
—
—
73
23
1.2
—
—
—
pF
pF
pF
Symbol
Min
Typ
Max
Unit
G
FS
V
GS(TH)
V
GS(Q)
V
DS(ON)
—
—
—
—
3
—
3.5
0.25
—
4.8
—
—
S
Vdc
Vdc
Vdc
V
(BR)DSS
I
GSS
I
DSS
65
—
—
—
—
—
—
1.3
4
Vdc
µAdc
µAdc
Symbol
Min
Typ
Max
Unit
Functional Tests (in Agere Systems Supplied Test Fixture)
(Test frequencies (f) = 865 MHz, 880 MHz, 895 MHz)
Linear Power Gain
(V
DS
= 28 V, P
OUT
= 6 W, I
DQ
= 450 mA)
Output Power
(V
DS
= 28 V, 1 dB compression, I
DQ
= 450 mA)
Drain Efficiency
(V
DS
= 28 V, P
OUT
= P1dB, I
DQ
= 450 mA)
Third-order Intermodulation Distortion
(100 kHz spacing, V
DS
= 28 V, P
OUT
= 45 WPEP, I
DQ
= 450 mA)
Input Return Loss
Ruggedness
(V
DS
= 28 V, P
OUT
= 45 W, I
DQ
= 450 mA, f = 880 MHz,
VSWR = 10:1, all angles)
G
L
P1dB
η
IMD
I
RL
—
19
45
—
—
—
20
60
59
–31
10
—
—
—
—
—
dB
W
%
dBc
dB
No degradation in output power.
2
Agere Systems Inc.
Preliminary Data Sheet
October 2004
AGR09045E
45 W, 865 MHz—895 MHz, N-Channel E-Mode, Lateral MOSFET
Test Circuit Illustrations for AGR09045E
V
DD
+
C19
V
GG
+
C26
C14
R3
+
R2
C13
C12
C11
C10
C9
C8
Z13
C17
R1
Z1
RF INPUT
Z3
C27
Z9
Z14
Z10
Z11
Z12
2
1
DUT
3
C4
C6
C5
C7
PINS:
1. DRAIN
2. GATE
3. SOURCE
Z15
C2
C3
C16
C15
Z2
Z4
C1
Z5
Z6
Z7
Z8
Z18
Z17
Z16
FB1
Z22
Z19
Z20
C18
Z21
RF OUTPUT
C20
C21
C22
C23
C24
C25
A. Schematic
Parts List:
■
Microstrip line: Z1 0.670 in. x 0.066 in.; Z2 0.035 in. x 0.066 in.; Z3 0.297 in. x 0.050 in.; Z4 0.069 in. x 0.066 in.; Z5 0.538 in. x 0.066 in.;
Z6 0.050 in. x 0.150 in.; Z7 0.797 in. x 0.150 in.; Z8 0.050 in. x 0.440 in.; Z9 0.299 in. x 0.440 in.; Z10 0.050 in. x 0.440 in.;
Z11 0.050 in. x 0.440 in.; Z12 0.494 in. x 0.440 in.; Z13 1.024 in. x 0.050 in.; Z14 0.093 in. x 0.300 in.; Z15 0.050 in. x 0.300 in.;
Z16 0.214 in. x 0.300 in.; Z17 0.050 in. x 0.300 in.; Z18 0.396 in. x 0.300 in.; Z19 0.050 x 0.300; Z20 0.808 in. x 0.066 in.;
Z21 0.881 in. x 0.066 in.; Z22 2.048 in. x 0.050 in.
®
■
ATC
chip capacitor: C1, C8, C18, C19: 47 pF, 100B470JW; C2: 3.3 pF, 100B3R3BW; C3: 5.6 pF, 100B5R6BW;
C4, C5, C6, C7: 12 pF, 100B120JW; C9, C16, C20: 10 pF, 100B100JW; C15: 1.8 pF, 100B1R8BW; C17: 6.8 pF, 100B6R8BW;
C27: 8.2 pF, 100A8R2BW.
■
1206 size 0.25 W, fixed film, chip resistors: R1: 50
Ω,
RM73B2B500J; R2: 43 kΩ, RM73B2B433J; R3: 1 kΩ, RM73B2B103J.
®
■
Murata
chip capacitor: C12, C23: 0.01 µF, GRM40X7R103K100AL.
■
0603 chip capacitor: C10, C21: 220 pF.
®
■
Sprague
tantalum chip capacitor: C14, C25, C26: 22 µF, 35 V.
®
ferrite bead: FB1 2743D19447.
■
Kreger
®
■
Kemet
chip capacitor: C13, C24: 0.10 µF, C1206C104KRAC7800.
®
■
Vitramon
chip capacitor: C11, C22: 2200 pF, VJ1206Y222KXA.
®
■
Taconic
ORCER RF-35: board material, 1 oz. copper, 30 mil thickness,
ε
r = 3.5.
B. Component Layout
Figure 2. AGR09045E Test Circuit
Agere Systems Inc.
3
AGR09045E
45 W, 865 MHz—895 MHz, N-Channel E-Mode, Lateral MOSFET
Preliminary Data Sheet
October 2004
Typical Performance Characteristics
0.11
0.12
0.38
0.13
0.37
0.14
0.36
0.1
0.9
0.0
7
3
0.4
0
13
70
0.0
RE
AC
TA
75
NC
EC
OM
PO
N
EN
T
(+
jX
/Z
R
,O
o)
VE
TI
CI
PA
CA
0.
0.
4
4
0.5
06
)
/Yo
(+jB
CE
N
TA
EP
SC
SU
0.6
60
0.4
0
12
0.7
2
65
0.2
14
0.4
0
5
0.4
5
0.6
0.0
4
6
0.4
15
0
0.0
—>
WAVELE
NGTH
S
TOW
ARD
0.49
GEN
ERA
0.48
TO
170
R—
0.47
>
160
90
80
0.8
1.0
IND
UCT
IVE
85
Z
L
0.6
0.7
0.8
0.9
1.0
0.0
D
<—
RD
LOA
TOWA
±
180
.47
THS
-170
ENG
VEL
WA
-90
-160
Z
0
= 7
Ω
Z
S
f1
0.1
0.2
0.3
0.4
0.5
1.2
1.4
1.6
1.8
f1
RESISTANCE COMPONENT (R/Zo), OR CONDUCTANCE COMPONENT (G/Yo)
0.2
0.49
0.1
0.4
0.6
o)
jB/Y
E
(-
NC
A
PT
0.48
8
0.
-85
MHz (f)
865 (f1)
880 (f2)
895 (f3)
Z
L
Ω
Z
S
Ω
(Complex
Source Impedance) (Complex Optimum Load Impedance)
0.479 + j0.043
3.12 + j0.070
0.529 + j0.072
3.20 + j0.316
0.553 + j0.101
3.32 + j0.590
DRAIN (1)
Z
L
SOURCE (3)
GATE (2)
Z
S
INPUT MATCH
DUT
OUTPUT MATCH
Figure 3. Series Equivalent Input and Output Impedances
4
1.0
0.2
Agere Systems Inc.
2.0
0
0.2
f3
f3
1.0
1.4
0.
8
0.6
8
0.0
0.8
1.2
55
9
0.0
1
0.4
0.4
110
0.39
100
90
50
0.15
0.35
80
45
1.0
40
70
35
0.4
0.
4
0.3
0.2
0.1
Preliminary Data Sheet
October 2004
AGR09045E
45 W, 865 MHz—895 MHz, N-Channel E-Mode, Lateral MOSFET
Typical Performance Characteristics
(continued)
0
-10
-20
V
DD
= 28 Vdc, I
DQ
= 0.45 A, T
C
= 30 °C,
IS-95 CDMA PILOT, PAGING, SYNC, TRAFFIC CODES 8 THROUGH 13.
OFFSET 1 = 750 kHz, 30 kHz BANDWIDTH. OFFSET 2 = 1.98 MHz, 30 kHz BANDWIDTH.
FREQUENCY = 880 MHz
ACPR (dBc)
S
-30
-40
-50
-60
-70
-80
0
5
10
P
OUT
(W)
S
15
20
25
ACP+
ACP-
ACP1+
ACP1-
Figure 4. ACPR vs. P
OUT
22
21
20
POWER GAIN (dB)S
19
18
17
16
15
14
13
12
11
10
860
865
870
875
880
885
890
895
RETURN LOSS
V
DD
= 28 Vdc, I
DQ
= 0.45 A, T
C
= 30 °C
WAVEFORM = CW
P
OUT
= 60 W
POWER GAIN
P
OUT
= 10 W
-2
-4
-8
-10
-12
-14
-16
-18
-20
-22
-24
-26
900
INPUT RETURN LOSS (dB)S
5
-6
FREQUENCY (MHz)S
Figure 5. Power Gain and Return Loss vs. Frequency
Agere Systems Inc.
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