45 W, 1930 MHz—1990 MHz, PCS LDMOS RF Power Transistor
Introduction
The AGR19045EF is a 45 W, 28 V N-channel later-
ally diffused metal oxide semiconductor (LDMOS)
RF power field effect transistor (FET) suitable for
personal communication service (PCS) (1930 MHz—
1990 MHz), global system for mobile communication
(GSM/EDGE), time-division multiple access (TDMA),
and single-carrier or multicarrier class AB power
amplifier applications.
GSM Features
■
Typical performance over entire GSM band:
— P1dB: 50 W typical.
— Power gain @ P1dB = 14.0 dB continuous wave
(CW).
— Efficiency @ P1dB = 54% typical CW.
— Return loss: –10 dB.
Device Performance Features
■
■
High-reliability, gold-metalization process.
Low hot carrier injection (HCI) induced bias drift
over 20 years.
Internally matched.
High gain, efficiency, and linearity.
Integrated ESD protection.
Device can withstand 10:1 voltage standing wave
ratio (VSWR) at 28 Vdc, 1930 MHz, 45 W CW out-
put power.
Large signal impedance parameters available.
Figure 1. AGR19045EF (flanged) Package
■
■
■
Typical two carrier N-CDMA performance: V
DD
=
28 V, I
DQ
= 550 mA, f1 = 1958.75 MHz, f2 =
1961.25 MHz, IS-95 CDMA (pilot, sync, paging,
traffic codes 8—13). Peak/average (P/A) = 9.72 dB
at 0.01% probability on CCDF. 1.2288 MHz trans-
mission bandwidth (BW). Adjacent channel power
ratio (ACPR) measured over 30 kHz BW at f1 –
885 kHz and f2 + 885 kHz. Third-order intermodu-
lation distortion (IM3) measured over a
1.2288 MHz BW at f1 – 2.5 MHz and f2 + 2.5 MHz:
— Output power (P
OUT
): 9.5 W.
— Power gain: 15 dB.
— Efficiency: 24.8%.
— IM3: –34.5 dBc.
— ACPR: –49.5 dBc.
■
■
■
ESD Rating*
AGR19045EF
HBM
MM
CDM
Minimum (V)
500
50
1500
Class
1B
A
4
EDGE Features
■
Typical EDGE performance,
1990 MHz, 26 V, I
DQ
= 400 mA:
— Output power (P
OUT
): 18 W typical.
— Power gain: 14.5 dB.
— Efficiency: 35% typical.
— Spectral regrowth:
❏
@ ±400 kHz = –62 dBc.
❏
@ ±600 kHz = –74 dBc.
— Error vector magnitude (EVM) = 2.0%.
* Although electrostatic discharge (ESD) protection circuitry has
been designed into this device, proper precautions must be
taken to avoid exposure to ESD and electrical overstress (EOS)
during all handling, assembly, and test operations. Agere
employs a human-body model (HBM), a machine model (MM),
and a charged-device model (CDM) qualification requirement in
order to determine ESD-susceptibility limits and protection
design evaluation. ESD voltage thresholds are dependent on the
circuit parameters used in each of the models, as defined by
JEDEC's JESD22-A114B (HBM), JESD22-A115A (MM), and
JESD22-C101A (CDM) standards.
Caution: MOS devices are susceptible to damage from elec-
trostatic charge. Reasonable precautions in han-
dling and packaging MOS devices should be
observed.
AGR19045EF
45 W, 1930 MHz—1990 MHz, PCS LDMOS RF Power Transistor
Preliminary Data Sheet
June 2004
Electrical Characteristics
Table 1. Thermal Characteristics
Parameter
Thermal Resistance, Junction to Case
Symbol
R
θJC
Value
1.5
Unit
°C/W
Table 2. Absolute Maximum Ratings*
Parameter
Drain-source Voltage
Gate-source Voltage
Total Dissipation at T
C
= 25 °C
Derate Above 25
°C
Operating Junction Temperature
Storage Temperature Range
Symbol
V
DSS
V
GS
P
D
—
T
J
T
STG
Value
65
–0.5, 15
115
0.67
200
–65, 150
Unit
Vdc
Vdc
W
W/°C
°C
°C
* Stresses in excess of the absolute maximum ratings can cause permanent damage to the device. These are absolute stress ratings only.
Functional operation of the device is not implied at these or any other conditions in excess of those given in the operational sections of the
data sheet. Exposure to absolute maximum ratings for extended periods can adversely affect device reliability.
Recommended operating conditions apply unless otherwise specified: T
C
= 30 °C.
Table 3. dc Characteristics
Parameter
Off Characteristics
Drain-source Breakdown Voltage (V
GS
= 0 V, I
D
= 38 µA)
Gate-source Leakage Current (V
GS
= 5 V, V
DS
= 0 V)
Zero Gate Voltage Drain Leakage Current (V
DS
= 28 V, V
GS
= 0 V)
On Characteristics
Forward Transconductance (V
DS
= 10 V, I
D
= 0.4 A)
Gate Threshold Voltage (V
DS
= 10 V, I
D
= 130 µA)
Gate Quiescent Voltage (V
DS
= 28 V, I
D
= 400 mA)
Drain-source On-voltage (V
GS
= 10 V, I
D
= 0.4 A)
G
FS
V
GS(TH)
V
GS(Q)
V
DS(ON)
—
—
—
—
3.0
—
3.7
0.3
—
4.8
—
—
S
Vdc
Vdc
Vdc
V
(BR)DSS
I
GSS
I
DSS
65
—
—
—
—
—
—
1.3
4
Vdc
µAdc
µAdc
Symbol
Min
Typ
Max
Unit
2
Agere Systems Inc.
Preliminary Data Sheet
June 2004
AGR19045EF
45 W, 1930 MHz—1990 MHz, PCS LDMOS RF Power Transistor
Electrical Characateristics
(continued)
Recommended operating conditions apply unless otherwise specified: T
C
= 30 °C.
Table 4. RF Characteristics
Parameter
Dynamic Characteristics
Symbol Min
—
Typ
1.0
Max Unit
—
pF
Reverse Transfer Capacitance
C
RSS
(V
DS
= 28 V, V
GS
= 0, f = 1.0 MHz)
(This part is internally matched on both the input and output.)
Functional Tests (in Agere Systems Supplied Test Fixture)
G
PS
Common-source Amplifier Power Gain
(V
DD
= 28 Vdc, P
OUT
= 9 W average, 2-Carrier N-CDMA, I
DQ
= 550 mA,
f1 = 1930 MHz, f2 = 1932.5 MHz and f1 = 1987.5 MHz, f2 = 1990 MHz)
η
Drain Efficiency
(V
DD
= 28 Vdc, P
OUT
= 9 W average, 2-Carrier N-CDMA, I
DQ
= 550 mA,
f1 = 1930 MHz, f2 = 1932.5 MHz and f1 = 1987.5 MHz, f2 = 1990 MHz)
IM3
Third-order Intermodulation Distortion
(V
DD
= 28 Vdc, P
OUT
= 9 W average, 2-Carrier N-CDMA, I
DQ
= 550 mA,
f1 = 1930 MHz, f2 = 1932.5 MHz and f1 = 1987.5 MHz, f2 = 1990 MHz; IM3
measured in a 1.228 MHz integration bandwidth centered at
f1 – 2.5 MHz and f2 + 2.5 MHz, referenced to the carrier channel power)
ACPR
Adjacent Channel Power Ratio
(V
DD
= 28 Vdc, P
OUT
= 9 W average, 2-Carrier N-CDMA, I
DQ
= 550 mA,
f1 = 1930 MHz, f2 = 1932.5 MHz and f1 = 1987.5 MHz, f2 = 1990 MHz;
ACPR measured in a 30 kHz integration bandwidth centered at f1 – 885 kHz
and f2 + 885 kHz, referenced to the carrier channel power)
Input Return Loss
IRL
(V
DD
= 28 Vdc, P
OUT
= 9 W average, 2-Carrier N-CDMA, I
DQ
= 550 mA,
f1 = 1930 MHz, f2 = 1932.5 MHz and f1 = 1987.5 MHz, f2 = 1990 MHz)
P1dB
Output Power at 1 dB Gain Compression
(V
DD
= 28 V, P
OUT
= 45 W CW, f = 1990 MHz, I
DQ
= 400 mA)
Ψ
Ruggedness
(V
DD
= 28 V, P
OUT
= 45 W CW, I
DQ
= 400 mA, f = 1930 MHz, VSWR = 10:1
[all phase angles])
14.5
15.0
—
dB
—
24.8
—
%
—
–34.5
—
dBc
—
–49.5
—
dBc
—
–10
—
dB
45
50
—
W
No degradation in output
power.
Agere Systems Inc.
3
AGR19045EF
45 W, 1930 MHz—1990 MHz, PCS LDMOS RF Power Transistor
Preliminary Data Sheet
June 2004
Test Circuit Illustrations for
AGR19045EF
V
DD
FB1
V
GG
R1
Z14
C1
C2
Z1
RF INPUT
C7
PINS: 1. DRAIN, 2. GATE, 3. SOURCE
C3
Z2
C4
Z13
C6
Z3
Z4
Z5
Z6 2
1
DUT
3
C21
RF
OUTPUT
C5
Z7
Z8
Z9
Z10
C20
Z11
Z12
C23
C22
C12
C13
C14
C15
C16
C17 C18
C19
A. Schematic
2
3
1
B. Component Layout
Parts List:
■
Microstrip line: Z1, 0.320 in. x 0.067 in.; Z2, 0.185 in. x 0.067 in.; Z3, 0.345 in. x 0.067 in.; Z4, 0.250 in. x 0.160 in.; Z5, 0.180 in. x 0.260 in.;
Z6, 0.400 in. x 0.735 in.; Z7, 0.355 in. x 0.840 in.; Z8, 0.120 in. x 0.280 in.; Z9, 0.525 in. x 0.130 in.; Z10, 0.145 in. x 0.067 in.;
Z11, 0.245 in. x 0.067 in.; Z12, 0.290 in. x 0.067 in.; Z13, 0.370 in. x 0.030 in.; Z14, 0.280 in. x 0.050 in.
®
■
ATC
B case chip capacitors: C5, C12, C22: 8.2 pF; C6, C20: 10 pF; C13: 1000 pF.
■
ATC
S case chip capacitor: C21: 0.2 pF
®
■
Kemet
B case chip capacitors: C2, C16: 0.1 µF CDR33BX104AKWS. Tantalum capacitor: C17, 1 µF, 50 V, T491C.
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