IRFC43N50KBPBF: 产品描述Power Field-Effect Transistor, 500V, 0.09ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, 6 INCH, WAFER; 产品类别晶体管; 文件大小106KB，共1页; 制造商International Rectifier （ Infineon ）; 官网地址http://www.irf.com/; 标准

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IRFC43N50KBPBF概述

Power Field-Effect Transistor, 500V, 0.09ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, 6 INCH, WAFER

IRFC43N50KBPBF规格参数

参数名称	属性值
是否无铅	不含铅
是否Rohs认证	符合
厂商名称	International Rectifier （ Infineon ）
零件包装代码	WAFER
包装说明	UNCASED CHIP, O-XUUC-N
Reach Compliance Code	compliant
Is Samacsys	N
配置	SINGLE WITH BUILT-IN DIODE
最小漏源击穿电压	500 V
最大漏源导通电阻	0.09 Ω
FET 技术	METAL-OXIDE SEMICONDUCTOR
JESD-30 代码	O-XUUC-N
元件数量	1
工作模式	ENHANCEMENT MODE
最高工作温度	150 °C
封装主体材料	UNSPECIFIED
封装形状	ROUND
封装形式	UNCASED CHIP
峰值回流温度（摄氏度）	260
极性/信道类型	N-CHANNEL
认证状态	Not Qualified
表面贴装	YES
端子形式	NO LEAD
端子位置	UPPER
处于峰值回流温度下的最长时间	40
晶体管元件材料	SILICON
Base Number Matches	1

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PD - 94242

IRFC43N50KB

HEXFET

Power MOSFET Die

in Wafer Form

500V

DS(on)

=0.090Ω

6" Wafer

Electrical Characteristics

Parameter

(BR)DSS

DS(on)

GS(th)

DSS

GSS

STG

Description

Drain-to-Source Breakdown Voltage

Static Drain-to-Source On-Resistance

Gate Threshold Voltage

Drain-to-Source Leakage Current

Gate-to-Source Leakage Current

Operating Junction and

Storage Temperature Range

Guaranteed (Min/Max)

500V Min.

0.090Ω Max.

3.0V Min., 5.0V Max.

50µA Max.

± 100nA Max.

-55°C to 150°C Max.

Test Conditions

= 0V, I

= 250µA

= 10V, I

= 28A

= V

, I

= 250µA

= 500V, V

= 0V, T

= 25°C

= ±30V

Mechanical Data

Nominal Back Metal Composition, Thickness:

Nominal Front Metal Composition, Thickness:

Dimensions:

Wafer Diameter:

Wafer Thickness:

Relevant Die Mechanical Drawing Number

Minimum Street Width

Reject Ink Dot Size

Recommended Storage Environment:

Recommended Die Attach Conditions:

Referenced Package Part:

Cr-NiV-Ag ( 0.1µm-0.2µm-0.5µm )

Al with 1% Si (0.004 mm)

0.315" x 0.470" [ 8.00 mm x 11.94 mm ]

150 mm

0.375 mm ± 0.025 mm

01-5444

0.004"

0.005" Diameter Minimum

Store in original container, in dessicated

nitrogen, with no contamination

For optimum electrical results, die attach

temperature should not exceed 300 °C

IRFPS43N50K

NOT ES:

1. ALL DIMENS IONS ARE S HOWN IN MILLIMETERS [INCHES ].

2. CONTROLLING DIMENS ION: [INCH].

2.08

[.082]

3. LET TER DESIGNATION:

S = S OURCE

G = GAT E

Die Outline

1.65

[.065]

S K = S OURCE KELVIN

IS = CURRENT SENS E

E = EMITT ER

4. DIMENS IONAL T OLERANCES :

11.94

[.470]

BONDING PADS :

WIDT H

LENGT H

OVERALL DIE:

< 0.635 T OLERANCE = + /- 0.013

< [.0250] T OLERANCE = + /- [.0005]

> 0.635 T OLERANCE = + /- 0.025

> [.0250] T OLERANCE = + /- [.0010]

< 1.270 T OLERANCE = + /- 0.102

< [.050] TOLERANCE = + /- [.004]

> 1.270 T OLERANCE = + /- 0.203

> [.050] TOLERANCE = + /- [.008]

WIDT H

0.65

[.026]

LENGT H

0.49

[.019]

8.00

[.315]

5. DIE T HICKNES S = 0.254 [.010]

* Notes: Electrical characteristics are reported for the reference packaged part (see above) and cannot guaranteed in die sales form due

to variations in packaging materials, dimension.

www.irf.com

07/18/01

IRFC43N50KBPBF相似产品对比

	IRFC43N50KBPBF
描述	Power Field-Effect Transistor, 500V, 0.09ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, 6 INCH, WAFER
是否无铅	不含铅
是否Rohs认证	符合
厂商名称	International Rectifier （ Infineon ）
零件包装代码	WAFER
包装说明	UNCASED CHIP, O-XUUC-N
Reach Compliance Code	compliant
Is Samacsys	N
配置	SINGLE WITH BUILT-IN DIODE
最小漏源击穿电压	500 V
最大漏源导通电阻	0.09 Ω
FET 技术	METAL-OXIDE SEMICONDUCTOR
JESD-30 代码	O-XUUC-N
元件数量	1
工作模式	ENHANCEMENT MODE
最高工作温度	150 °C
封装主体材料	UNSPECIFIED
封装形状	ROUND
封装形式	UNCASED CHIP
峰值回流温度（摄氏度）	260
极性/信道类型	N-CHANNEL
认证状态	Not Qualified
表面贴装	YES
端子形式	NO LEAD
端子位置	UPPER
处于峰值回流温度下的最长时间	40
晶体管元件材料	SILICON
Base Number Matches	1

IRFC43N50KBPBF

IRFC43N50KBPBF概述

IRFC43N50KBPBF规格参数

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IRFC43N50KBPBF相似产品对比

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