PD - 96074A
IRF7805ZUPbF
HEXFET
®
Power MOSFET
Applications
l
High Frequency Point-of-Load
Synchronous Buck Converter for
Applications in Networking &
Computing Systems
l
Lead-Free
Benefits
l
Very Low R
DS(on)
at 4.5V V
GS
l
Ultra-Low Gate Impedance
l
Fully Characterized Avalanche
Voltage and Current
l
100% tested for Rg
V
DSS
R
DS(on)
max
30V 6.8m @V
GS
= 10V
:
8
7
Qg (typ.)
18nC
S
S
S
G
1
2
3
4
A
A
D
D
D
D
6
5
Top View
SO-8
Absolute Maximum Ratings
Parameter
V
DS
V
GS
I
D
@ T
A
= 25°C
I
D
@ T
A
= 70°C
I
DM
P
D
@T
A
= 25°C
P
D
@T
A
= 70°C
T
J
T
STG
Drain-to-Source Voltage
Gate-to-Source Voltage
Continuous Drain Current, V
GS
@ 10V
Continuous Drain Current, V
GS
@ 10V
Pulsed Drain Current
Max.
30
± 20
16
12
120
2.5
1.6
0.02
-55 to + 150
Units
V
Power Dissipation
f
Power Dissipation
f
c
A
W
W/°C
°C
Linear Derating Factor
Operating Junction and
Storage Temperature Range
Thermal Resistance
R
θJL
R
θJA
g
Junction-to-Ambient
fg
Junction-to-Drain Lead
Parameter
Typ.
–––
–––
Max.
20
50
Units
°C/W
Notes
through
are on page 10
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1
09/18/06
IRF7805ZUPbF
Static @ T
J
= 25°C (unless otherwise specified)
Parameter
BV
DSS
∆ΒV
DSS
/∆T
J
R
DS(on)
V
GS(th)
∆V
GS(th)
I
DSS
I
GSS
gfs
Q
g
Q
gs1
Q
gs2
Q
gd
Q
godr
Q
sw
Q
oss
R
G
t
d(on)
t
r
t
d(off)
t
f
C
iss
C
oss
C
rss
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
Gate Threshold Voltage Coefficient
Drain-to-Source Leakage Current
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Forward Transconductance
Total Gate Charge
Pre-Vth Gate-to-Source Charge
Post-Vth Gate-to-Source Charge
Gate-to-Drain Charge
Gate Charge Overdrive
Switch Charge (Q
gs2
+ Q
gd
)
Output Charge
Gate Resistance
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Parameter
Single Pulse Avalanche Energy
Avalanche Current
Min. Typ. Max. Units
30
–––
–––
–––
1.35
–––
–––
–––
–––
–––
64
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
0.023
5.5
7.0
–––
- 4.7
–––
–––
–––
–––
–––
18
4.7
1.6
6.2
5.5
7.8
10
1.0
11
10
14
3.7
2080
480
220
–––
–––
6.8
8.7
2.25
–––
1.0
150
100
-100
–––
27
–––
–––
–––
–––
–––
–––
2.1
–––
–––
–––
–––
–––
–––
–––
Typ.
–––
–––
nC
Ω
nC
V
Conditions
V
GS
= 0V, I
D
= 250µA
V/°C Reference to 25°C, I
D
= 1mA
mΩ V
GS
= 10V, I
D
= 16A
V
V
GS
= 4.5V, I
D
V
DS
= V
GS
, I
D
= 250µA
e
= 13A
e
mV/°C
µA V
DS
= 24V, V
GS
= 0V
nA
S
V
DS
= 24V, V
GS
= 0V, T
J
= 125°C
V
GS
= 20V
V
GS
= -20V
V
DS
= 15V, I
D
= 12A
V
DS
= 15V
V
GS
= 4.5V
I
D
= 12A
See Fig. 16
V
DS
= 16V, V
GS
= 0V
V
DD
= 15V, V
GS
= 4.5V
I
D
= 12A
ns
e
Clamped Inductive Load
V
GS
= 0V
V
DS
= 15V
ƒ = 1.0MHz
Max.
72
12
Units
mJ
A
pF
Avalanche Characteristics
E
AS
I
AR
d
Diode Characteristics
Parameter
I
S
I
SM
V
SD
t
rr
Q
rr
t
on
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode)
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
Forward Turn-On Time
Min. Typ. Max. Units
–––
–––
–––
–––
–––
–––
–––
–––
29
20
3.1
A
120
1.0
44
30
V
ns
nC
Conditions
MOSFET symbol
showing the
integral reverse
p-n junction diode.
T
J
= 25°C, I
S
= 12A, V
GS
= 0V
T
J
= 25°C, I
F
= 12A, V
DD
= 15V
di/dt = 100A/µs
Ã
e
Intrinsic turn-on time is negligible (turn-on is dominated by L
S
+L
D
)
e
2
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IRF7805ZUPbF
1000
TOP
15V
10V
4.5V
3.75V
3.25V
3.0V
2.75V
BOTTOM 2.5V
V
GS
1000
ID, Drain-to-Source Current (A)
100
ID, Drain-to-Source Current (A)
100
V
GS
15V
10V
4.5V
3.75V
3.25V
3.0V
2.75V
BOTTOM 2.5V
TOP
10
10
1
2.5V
20µs PULSE WIDTH
Tj = 25°C
2.5V
20µs PULSE WIDTH
Tj = 150°C
0.01
0.1
1
10
100
0.1
0.01
0.1
1
1
10
100
VDS, Drain-to-Source Voltage (V)
VDS, Drain-to-Source Voltage (V)
Fig 1.
Typical Output Characteristics
Fig 2.
Typical Output Characteristics
1000
2.0
RDS(on) , Drain-to-Source On Resistance
(Normalized)
ID, Drain-to-Source Current
(Α)
ID = 16A
VGS = 10V
100
1.5
T J = 150°C
10
1.0
T J = 25°C
1
2.5
3.0
VDS = 15V
20µs PULSE WIDTH
3.5
4.0
4.5
0.5
-60 -40 -20
0
20
40
60
80 100 120 140 160
VGS, Gate-to-Source Voltage (V)
T J , Junction Temperature (°C)
Fig 3.
Typical Transfer Characteristics
Fig 4.
Normalized On-Resistance
Vs. Temperature
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3
IRF7805ZUPbF
10000
VGS, Gate-to-Source Voltage (V)
VGS = 0V,
f = 1 MHZ
C iss = C gs + C gd, C ds SHORTED
C rss = C gd
C oss = C ds + C gd
12
ID= 12A
10
8
6
4
2
0
VDS= 24V
VDS= 15V
C, Capacitance (pF)
Ciss
1000
Coss
Crss
100
1
10
100
0
10
20
30
40
VDS, Drain-to-Source Voltage (V)
QG Total Gate Charge (nC)
Fig 5.
Typical Capacitance Vs.
Drain-to-Source Voltage
Fig 6.
Typical Gate Charge Vs.
Gate-to-Source Voltage
1000.0
1000
OPERATION IN THIS AREA
LIMITED BY R DS(on)
100.0
T J = 150°C
10.0
ID, Drain-to-Source Current (A)
ISD, Reverse Drain Current (A)
100
10
100µsec
1msec
1
Tc = 25°C
Tj = 150°C
Single Pulse
1.0
10.0
VDS , Drain-toSource Voltage (V)
10msec
1.0
T J = 25°C
VGS = 0V
0.1
0.2
0.4
0.6
0.8
1.0
1.2
VSD, Source-toDrain Voltage (V)
0.1
100.0
Fig 7.
Typical Source-Drain Diode
Forward Voltage
Fig 8.
Maximum Safe Operating Area
4
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IRF7805ZUPbF
16
2.2
VGS(th) Gate threshold Voltage (V)
2.0
ID , Drain Current (A)
12
1.8
ID = 250µA
1.6
8
1.4
4
1.2
0
25
50
75
100
125
150
1.0
-75
-50
-25
0
25
50
75
100
125
150
T J , Junction Temperature (°C)
T J , Temperature ( °C )
Fig 9.
Maximum Drain Current Vs.
Case Temperature
Fig 10.
Threshold Voltage Vs. Temperature
100
Thermal Response ( Z thJA )
10
D = 0.50
0.20
0.10
0.05
1
0.02
0.01
τ
J
τ
J
τ
1
R
1
R
1
τ
2
R
2
R
2
R
3
R
3
τ
3
R
4
R
4
τ
C
τ
τ
4
Ri (°C/W)
1.081
12.880
24.191
11.862
τi
(sec)
0.000437
0.213428
2.335
52
0.1
τ
1
τ
2
τ
3
τ
4
0.01
Ci=
τi/Ri
Ci i/Ri
SINGLE PULSE
( THERMAL RESPONSE )
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthja + Tc
0.001
0.01
0.1
1
10
100
0.001
1E-006
1E-005
0.0001
t1 , Rectangular Pulse Duration (sec)
Fig 11.
Maximum Effective Transient Thermal Impedance, Junction-to-Ambient
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5
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