PD-94695H
IRHLF770Z4
2N7621T2
RADIATION HARDENED
LOGIC LEVEL POWER MOSFET
THRU-HOLE TO-205AF (TO-39)
Product Summary
Part Number
IRHLF770Z4
IRHLF730Z4
60V, N-CHANNEL
TECHNOLOGY
Radiation Level
100 kRads(Si)
300 kRads(Si)
R
DS(on)
0.65
0.65
I
D
1.6A*
1.6A*
TO-39
Description
IRHLF770Z4 is part of the International Rectifier HiRel
family of products. IR HiRel R7 Logic Level Power
MOSFETs provide simple solution to interfacing CMOS
and TTL control circuits to power devices in space and
other radiation environments. The threshold voltage
remains within acceptable operating limits over the full
operating temperature and post radiation. This is achieved
while maintaining single event gate rupture and single
event burnout immunity.
The device is ideal when used to interface directly with
most logic gates, linear IC’s, micro-controllers, and other
device types that operate from a 3.3-5V source. It may
also be used to increase the output current of a PWM,
voltage comparator or an operational amplifier where the
logic level drive signal is available.
Features
5V CMOS and TTL Compatible
Fast Switching
Single Event Effect (SEE) Hardened
Low Total Gate Charge
Simple Drive Requirements
Light Weight
Complementary
P-Channel Available -
IRHLF7970Z4
ESD Rating: Class 0 per MIL-STD-750,
Method 1020
Absolute Maximum Ratings
Symbol
I
D
@ V
GS
= 4.5V, T
C
= 25°C
I
DM
P
D
@T
C
= 25°C
V
GS
E
AS
I
AR
E
AR
dv/dt
T
J
T
STG
Pre-Irradiation
Parameter
Value
1.6*
1.0*
6.4
5.0
0.04
± 10
6.9
1.6
0.5
3.5
-55 to + 150
°C
300 (0.063 in. /1.6 mm from case for 10s)
0.98 (Typical)
g
W
W/°C
V
mJ
A
mJ
V/ns
A
Units
Continuous Drain Current
Pulsed Drain Current
Maximum Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Single Pulse Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Operating Junction and
Storage Temperature Range
Lead Temperature
Weight
I
D
@ V
GS
= 4.5V, T
C
= 100°C Continuous Drain Current
* Derated to match the complementary P-Channel Logic Level Power Mosfet - IRHLF7970Z4
For Footnotes, refer to the page 2.
1
International Rectifier HiRel Products, Inc.
2018-05-30
IRHLF770Z4
2N7621T2
Pre-Irradiation
Electrical Characteristics @ Tj = 25°C (Unless Otherwise Specified)
Symbol
BV
DSS
BV
DSS
/T
J
R
DS(on)
V
GS(th)
V
GS(th)
/T
J
Gfs
I
DSS
I
GSS
Q
G
Q
GS
Q
GD
t
d(on)
tr
t
d(off)
t
f
Ls +L
D
C
iss
C
oss
C
rss
R
G
Parameter
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
Gate Threshold Voltage Coefficient
Forward Transconductance
Zero Gate Voltage Drain Current
Gate-to-Source Leakage Forward
Gate-to-Source Leakage Reverse
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain (‘Miller’) Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Inductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
Min. Typ. Max. Units
60
–––
–––
1.0
–––
1.1
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
0.08
–––
–––
-3.5
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
7.0
152
39
1.6
9.5
–––
–––
0.65
2.0
–––
–––
1.0
10
100
-100
2.6
0.8
1.5
6.5
14
30
13
–––
–––
–––
–––
–––
V
V/°C
Test Conditions
V
GS
= 0V, I
D
= 250µA
Reference to 25°C, I
D
= 1.0mA
V
GS
= 4.5V, I
D
= 1.0A
V
V
DS
= V
GS
, I
D
= 250µA
mV/°C
S
V
DS
= 10V, I
D
= 1.0A
V
DS
= 48V, V
GS
= 0V
µA
V
DS
= 48V,V
GS
= 0V,T
J
=125°C
V
GS
= 10V
nA
V
GS
= -10V
I
D
= 1.6A
nC
V
DS
= 30V
V
GS
= 4.5V
V
DD
= 30V
I
D
= 1.6A
ns
R
G
= 24
V
GS
= 4.5V
nH
Measured from Drain lead (6mm / 0.25 in
from package) to Source lead (6mm / 0.25
in from package) with Source wire internally
bonded from Source lead to Drain lead.
pF
V
GS
= 0V
V
DS
= 25V
ƒ = 1.0MHz
ƒ = 1.0MHz, open drain
Source-Drain Diode Ratings and Characteristics
Symbol
I
S
I
SM
V
SD
t
rr
Q
rr
t
on
Parameter
Continuous Source Current (Body Diode)
Pulsed Source Current (Body Diode)
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
Forward Turn-On Time
Min. Typ. Max. Units
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
1.6*
6.4
1.2
78
150
A
V
ns
nC
Test Conditions
T
J
= 25°C,I
S
= 1.6A, V
GS
= 0V
T
J
= 25°C, I
F
= 1.6A, V
DD
≤
25V
di/dt = 100A/µs
Intrinsic turn-on time is negligible (turn-on is dominated by L
S
+L
D
)
* Derated to match the complementary P-Channel Logic Level Power Mosfet - IRHLF7970Z4
Thermal Resistance
Symbol
R
JC
Parameter
Junction-to-Case
Min.
–––
Typ.
–––
Max.
25
Units
°C/W
Footnotes:
Repetitive Rating; Pulse width limited by maximum junction temperature.
V
DD
= 25V, starting T
J
= 25°C, L = 5.4mH, Peak I
L
= 1.6A, V
GS
= 10V
I
SD
1.6A, di/dt
92A/µs, V
DD
60V, T
J
150°C
Pulse width
300 µs; Duty Cycle
2%
Total Dose Irradiation with V
GS
Bias.
10 volt V
GS
applied and V
DS
= 0 during irradiation per MIL-STD-750, Method 1019, condition A.
Total Dose Irradiation with V
DS
Bias.
48 volt V
DS
applied and V
GS
= 0 during irradiation per MlL-STD-750, Method 1019, condition A.
2
International Rectifier HiRel Products, Inc.
2018-05-30
IRHLF770Z4
2N7621T2
Radiation Characteristics
Pre-Irradiation
IR HiRel Radiation Hardened MOSFETs are tested to verify their radiation hardness capability. The hardness assurance
program at IR HiRel is comprised of two radiation environments. Every manufacturing lot is tested for total ionizing dose
(per notes 5 and 6) using the TO-39 package. Both pre- and post-irradiation performance are tested and specified using
the same drive circuitry and test conditions in order to provide a direct comparison.
Table1. Electrical Characteristics @ Tj = 25°C, Post Total Dose Irradiation
Symbol
BV
DSS
V
GS(th)
I
GSS
I
GSS
I
DSS
R
DS(on)
V
SD
Parameter
Drain-to-Source Breakdown Voltage
Gate Threshold Voltage
Gate-to-Source Leakage Forward
Gate-to-Source Leakage Reverse
Zero Gate Voltage Drain Current
Static Drain-to-Source
On-State Resistance (TO-39)
Diode Forward Voltage
Up to 300 kRads (Si)
1
Min.
Max.
60
–––
1.0
–––
–––
–––
–––
–––
2.0
100
-100
1.0
0.65
1.2
Units
V
V
nA
nA
µA
V
Test Conditions
V
GS
= 0V, I
D
= 250µA
V
DS
= V
GS
, I
D
= 250µA
V
GS
= 10V
V
GS
= -10V
V
DS
= 48V, V
GS
= 0V
V
GS
= 4.5V, I
D
= 1.0A
V
GS
= 0V, I
D
= 1.6A
1. Part numbers IRHLF770Z4 and IRHLF730Z4
IR HiRel radiation hardened MOSFETs have been characterized in heavy ion environment for Single Event Effects
(SEE). Single Event Effects characterization is illustrated in Fig. a and Table 2.
Table 2. Typical Single Event Effect Safe Operating Area
VDS (V)
LET
(MeV/(mg/cm
2
))
38.1
60.9
90.7
Energy
(MeV)
358
659
1375
Range
(µm)
43.9
54
75.4
@ VGS = @ VGS = @ VGS = @ VGS = @ VGS = @ VGS =
0V
-2V
-3V
-4V
-5V
-6V
60
60
60
60
60
60
60
60
–––
60
60
–––
60
60
–––
60
–––
–––
70
60
50
40
30
20
10
0
Bias VDS (V)
LET = 38.1
LET = 60.9
LET = '90.7
0
-1
-2
-3
-4
-5
-6
Bias VGS (V)
Fig a.
Typical Single Event Effect, Safe Operating Area
For Footnotes, refer to the page 2.
3
International Rectifier HiRel Products, Inc.
2018-05-30
IRHLF770Z4
2N7621T2
Pre-Irradiation
Fig 1.
Typical Output Characteristics
Fig 2.
Typical Output Characteristics
Fig 3.
Typical Transfer Characteristics
Fig 4.
Normalized On-Resistance Vs. Temperature
Fig 5.
Typical On-Resistance Vs Gate Voltage
4
Fig 6.
Typical On-Resistance Vs Drain Current
2018-05-30
International Rectifier HiRel Products, Inc.
IRHLF770Z4
2N7621T2
Pre-Irradiation
Fig 7.
Typical Drain-to-Source
Breakdown Voltage Vs Temperature
Fig 8.
Typical Threshold Voltage Vs
Temperature
Fig 9.
Typical Capacitance Vs.
Drain-to-Source Voltage
Fig 10.
Typical Gate Charge Vs.
Gate-to-Source Voltage
Fig 11.
Typical Source-Drain Diode Forward Voltage
5
Fig 12.
Maximum Drain Current Vs.Case Temperature
2018-05-30
International Rectifier HiRel Products, Inc.
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