Preliminary Data Sheet
April 2004
AGR21090E
90 W, 2.110 GHz—2.170 GHz, N-Channel E-Mode, Lateral MOSFET
Introduction
The AGR21090E is a high-voltage, gold-metalized,
laterally diffused, metal oxide semiconductor
(LDMOS) RF power transistor suitable for wideband
code-division multiple access (W-CDMA), and single
and multicarrier class AB wireless base station power
amplifier applications.
Table 1. Thermal Characteristics
Parameter
Thermal Resistance,
Junction to Case:
AGR21090EU
AGR21090EF
Sym
Value
Unit
R
θJC
R
θJC
0.7
0.7
°C/W
°C/W
Table 2. Absolute Maximum Ratings*
Parameter
Drain-source Voltage
Gate-source Voltage
Total Dissipation at T
C
= 25 °C:
AGR21090EU
AGR21090EF
Derate Above 25
°C:
AGR21090EU
AGR21090EF
CW RF Input Power
(V
DS
= 31 V)
Operating Junction Tempera-
ture
Storage Temperature Range
Sym Value Unit
V
DSS
65
Vdc
V
GS
–0.5, 15 Vdc
P
D
P
D
—
—
—
T
J
250
250
1.4
1.4
30
200
W
W
W/°C
W/°C
W
°C
°C
AGR21090EU (unflanged)
AGR21090EF (flanged)
Figure 1. Available Packages
Features
s
s
s
s
s
s
s
s
Typical performance for 2 carrier 3GPP
W-CDMA systems. F1 = 2135 MHz and
F2 = 2145 MHz with 3.84 MHz channel BW, adja-
cent channel BW = 3.84 MHz at F1 – 5 MHz and
F2 + 5 MHz. Third-order distortion is measured
over 3.84 MHz BW at F1 – 10 MHz and
F2 + 10 MHz. Typical P/A ratio of 8.5 dB at 0.01%
(probability) CCDF:
— Output power: 19 W.
— Power gain: 14.5 dB.
— Efficiency: 26%.
— IM3: –33 dBc.
— ACPR: –36 dBc.
— Return loss: –12 dB.
High-reliability, gold-metalization process.
Low hot carrier injection (HCI) induced bias drift
over 20 years.
Internally matched.
High gain, efficiency, and linearity.
Integrated ESD protection.
Device can withstand a 10:1 voltage standing wave
ratio (VSWR) at 28 Vdc, 2140 MHz, 90 W continu-
ous wave (CW) output power.
Large signal impedance parameters available.
T
STG
–65, 150
* Stresses in excess of the absolute maximum ratings can cause
permanent damage to the device. These are absolute stress rat-
ings only. Functional operation of the device is not implied at
these or any other conditions in excess of those given in the
operational sections of the data sheet. Exposure to absolute
maximum ratings for extended periods can adversely affect
device reliability.
Table 3. ESD Rating*
AGR21090E
HBM
MM
CDM
Minimum (V)
500
50
1500
Class
1B
A
4
* Although electrostatic discharge (ESD) protection circuitry has
been designed into this device, proper precautions must be
taken to avoid exposure to ESD and electrical overstress (EOS)
during all handling, assembly, and test operations. Agere
employs a human-body model (HBM), a machine model (MM),
and a charged-device model (CDM) qualification requirement in
order to determine ESD-susceptibility limits and protection
design evaluation. ESD voltage thresholds are dependent on the
circuit parameters used in each of the models, as defined by
JEDEC's JESD22-A114B (HBM), JESD22-A115A (MM), and
JESD22-C101A (CDM) standards.
Caution: MOS devices are susceptible to damage from elec-
trostatic charge. Reasonable precautions in han-
dling and packaging MOS devices should be
observed.
AGR21090E
90 W, 2.110 GHz—2.170 GHz, N-Channel E-Mode, Lateral MOSFET
Preliminary Data Sheet
April 2004
Electrical Characteristics
Recommended operating conditions apply unless otherwise specified: T
C
= 30 °C.
Table 4. dc Characteristics
Parameter
Off Characteristics
Drain-source Breakdown Voltage (V
GS
= 0, I
D
= 100 µA)
Gate-source Leakage Current (V
GS
= 5 V, V
DS
= 0 V)
Zero Gate Voltage Drain Leakage Current (V
DS
= 28 V, V
GS
= 0 V)
On Characteristics
Forward Transconductance (V
DS
= 10 V, I
D
= 1 A)
Gate Threshold Voltage (V
DS
= 10 V, I
D
= 300 µA)
Gate Quiescent Voltage (V
DS
= 28 V, I
D
= 800 mA)
Drain-source On-voltage (V
GS
= 10 V, I
D
= 1 A)
Table 5. RF Characteristics
Parameter
Symbol
Dynamic Characteristics
Reverse Transfer Capacitance
(V
DS
= 28 V, V
GS
= 0, f = 1.0 MHz)
(This part is internally matched on both the input and output.)
Common-source Amplifier Power Gain*
Drain Efficiency*
Third-order Intermodulation Distortion*
(IM3 distortion measured over 3.84 MHz BW @ f1 – 10 MHz
and f2 + 10 MHz)
Adjacent Channel Power Ratio*
(ACPR measured over BW of 3.84 MHz @ f1 – 5 MHz
and f2 + 5 MHz)
Input Return Loss*
Power Output, 1 dB Compression Point
(V
DD
= 28 V, f
C
= 2140.0 MHz)
Output Mismatch Stress
(V
DD
= 28 V, P
OUT
= 90 W (CW), I
DQ
= 800 mA, f
C
= 2140.0 MHz
VSWR = 10:1; [all phase angles])
C
RSS
—
2.1
—
pF
Min
Typ
Max
Unit
G
FS
V
GS(TH)
V
GS(Q)
V
DS(ON)
—
2.8
3.0
—
6.4
3.4
3.7
0.11
—
4.8
4.6
—
S
Vdc
Vdc
Vdc
V
(BR)DSS
I
GSS
I
DSS
65
—
—
—
—
—
—
3
9
Vdc
µAdc
µAdc
Symbol
Min
Typ
Max
Unit
Functional Tests (in Agere Systems Supplied Test Fixture)
G
PS
η
IM3
14.0
24
—
14.5
26
–33
—
—
–32
dB
%
dBc
ACPR
—
–36
–35
dBc
IRL
P1dB
ψ
—
85
–12
93
–9
—
dB
W
No degradation in output power.
* 3GPP W-CDMA, typical P/A ratio of 8.5 dB at 0.01% CCDF, f1 = 2135 MHz, and f2 = 2145 MHz.
V
DD
= 28 Vdc, I
DQ
= 800 mA, and P
OUT
= 19 W average.
Nominal operating voltage 28 Vdc. Qualified for a maximum operating voltage of 32 Vdc ±0.5 V.
2
Agere Systems Inc.
Preliminary Data Sheet
April 2004
AGR21090E
90 W, 2.110 GHz—2.170 GHz, N-Channel E-Mode, Lateral MOSFET
Test Circuit Illustrations for AGR21090E
FB1
V
GG
R3
+
R4
C4
C5
C3
C2
Z6
Z9
Z10
Z11
Z12
Z13 C6
Z14
RF
OUTPUT
PINS:
1. DRAIN
2. GATE
3. SOURCE
V
DD
+
Z7
C7
C8
C9
C10
C11
R2
+
Z1
RF INPUT
C1
Z2
Z3
Z4
Z5
2
1
DUT
3
Z8
C18
+
C13 C14
C15
C16
C17
C19
A. Schematic
Parts List:
s
Microstrip line: Z1 0.889 in. x 0.065 in.; Z2 0.370 in. x 0.065 in.; Z3 0.160 in. x 0.250 in.; Z4 0.080 in. x 0.400 in.; Z5 0.195 in. x 1.000 in.;
Z6 0.050 in. x 0.860 in.; Z7 0.050 in. x 0.880 in.; Z8 0.050 in. x 0.880 in.; Z9 0.180 in. x 1.060 in.; Z10 0.110 in. x 1.060 in.;
Z11 0.260 in. x 1.060 in. x 0.065 in. taper; Z12 0.195 x 0.065 in.; Z13 0.395 in. x 0.065 in.; Z14 0.555 in. x 0.065 in.
®
s
ATC
chip capacitor: C1, C6: 8.2 pF 100B8R2JW500X; C2, C7, C13: 6.8 pF 100B6R8JW500X.
®
s
Sprague
tantalum surface-mount chip capacitor: C3, C5, C11, C17: 22 µF, 35 V.
®
1206 size chip capacitor: C10, C16: 0.1 µF C1206104K5RAC7800.
s
Kemet
®
s
Murata
0805 size chip capacitor: C9, C15: 0.01 µF GRM40X7R103K100AL.
®
s
Johanson Giga-Trim
variable capacitor: C18, C19: 0.4 pF to 2.5 pF 27281SL.
s
1206 size chip capacitor: C4, C8, C14: 22000 pF.
s
1206 size chip resistor: R2 4.7
Ω,
R3 1.02 kΩ, R4 560 kΩ.
®
s
Fair-Rite
ferrite bead: FB1 2743019447.
®
s
Taconic
ORCER RF-35: board material, 1 oz. copper, 30 mil thickness,
ε
r = 3.5.
B. Component Layout
Figure 2. AGR21090E Test Circuit
Agere Systems Inc.
3
AGR21090E
90 W, 2.110 GHz—2.170 GHz, N-Channel E-Mode, Lateral MOSFET
Preliminary Data Sheet
April 2004
Typical Performance Characteristics
S
TOW
0.0
Ð
>
W
A
V
EL
E
N
GTH
170
0.49
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1.0
1.2
1.4
1.6
1.8
2.0
3.0
4.0
5.0
10
20
0.0
Ð
D
L
OA
D
<
OW
A
R
7
±
180
HST
0.4
70
N
GT
-1
E
V
EL
WA
<Ð
-90
-160
50
RESISTANCE COMPONENT (R/Zo), OR CONDUCTANCE COMPONENT (G/Yo)
0.2
0.49
0.48
)
/
Yo
(-jB
CE
0.6
-85
N
TA
EP
SC
4
0.0
50
-1
-80
U
ES
V
TI
UC
0.4
0.3
6
5
0.0
5
0.4
40
-1
-70
06
0.
0.6
-60
1.6
0.7
1.4
0.8
0.9
1.0
1.2
5
-5
0
-5
5
-4
MHz (f)
2110 (f1)
2140 (f2)
2170 (f3)
Z
L
Ω
Z
S
Ω
(Complex
Source Impedance) (Complex Optimum Load Impedance)
2.52 – j4.60
3.10 – j3.11
2.46 – j4.42
3.01 – j3.05
2.37 – j4.25
2.94 – j2.99
DRAIN (1)
Z
L
SOURCE (3)
GATE (2)
Z
S
INPUT MATCH
DUT
OUTPUT MATCH
Figure 3. Series Equivalent Input and Output Impedances
4
Agere Systems Inc.
F
0.
32
18
0.
0
-5
-25
44
0
-65
.5
0.
3
0.3
0.1
7
-30
-60
1.8
2.
0
0.3
0.1
4
6
-3
-70
5
0.35
0.15
0.36
0.14
-80
-4
0
0.37
0.13
0.4
0.2
-90
0.12
0.38
0.11
-100
0.39
CA
P
A
0.1
0.4
-110
CI
T
IVE
RE
AC
TA
NC
EC
OM
0.0
0.4
9
1
-12
0
0.0
8
PO
N
0.4
2
EN
T
(-j
4
0.
Z
S
X/
-20
3.
O
),
Zo
0
f1
-75
R
0.6
f3
IN
D
-15
4.0
0.8
f3
f1
5.0
1.
0.2
1.
0
Z
L
0
-10
8
0.
10
0.1
0.4
50
20
0.6
0.4
Z
0
= 5
Ω
A
RD
U
CT
0.48
IN
D
90
0.
8
10
0.1
0.
07
-1
30
0.
43
0.25
0.26
0.24
0.27
0.23
0.25
0.24
0.26
0.23
0.27
REFL
ECTI
ON
COEFFI
CI
EN
T
I
N
D
EG
R
L
E
OF
EES
ANG
I
SSI
ON
COEFFI
CI
EN
T
I
N
TRA
N
SM
D
EGR
EES
20
L
E
OF
ANG
0.2
0.2
0.3
-4
0
50
-20
0.2
2
0.2
8
0.2
9
0.2
1
-30
0.
19
0.
31
Preliminary Data Sheet
April 2004
AGR21090E
90 W, 2.110 GHz—2.170 GHz, N-Channel E-Mode, Lateral MOSFET
Typical Performance Characteristics
(continued)
16.50
16.00
15.50
15.00
G
PS
(dB)
S
14.50
14.00
13.50
13.00
12.50
12.00
11.50
1.00
Test Conditions:
V
DD
28 Vdc, f1 = 2135 MHz, f2 = 2145 MHz.
Two-tone measurement, 10 MHz tone spacing.
I
DQ
= 1100 mA
I
DQ
= 950 mA
I
DQ
= 500 mA
I
DQ
= 650 mA
10.00
P
OUT
(W) PEPZ
I
DQ
= 800 mA
100.00
Figure 4. Two-Tone Power Gain vs. Output Power and I
DQ
-20.00
-25.00
-30.00
-35.00
IMD3 (dBc)Z
-40.00
-45.00
-50.00
-55.00
-60.00
-65.00
-70.00
1.00
Test Conditions:
V
DD
28 Vdc, f1 = 2135 MHz, f2 = 2145 MHz.
Two-tone measurement, 10 MHz tone spacing.
I
DQ
= 500 mA
I
DQ
= 650 mA
I
DQ
= 1100 mA
I
DQ
= 800 mA
I
DQ
= 950 mA
10.00
P
OUT
(W) PEPZ
100.00
1000.00
Figure 5. IMD3 vs. Output Power and I
DQ
Agere Systems Inc.
5
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