PD - 9.1082
IRGPC30MD2
INSULATED GATE BIPOLAR TRANSISTOR
WITH ULTRAFAST SOFT RECOVERY DIODE
Features
• Short circuit rated -10µs @125°C, V
GE
= 15V
• Switching-loss rating includes all "tail" losses
• HEXFRED
TM
soft ultrafast diodes
• Optimized for medium operating frequency ( 1 to
10kHz) See Fig. 1 for Current vs. Frequency curve
C
Short Circuit Rated Fast
CoPack IGBT
V
CES
= 600V
V
CE(sat)
≤
2.9V
G
@V
GE
= 15V, I
C
= 16A
E
n-channel
Description
Co-packaged IGBTs are a natural extension of International Rectifier's well
known IGBT line. They provide the convenience of an IGBT and an ultrafast
recovery diode in one package, resulting in substantial benefits to a host of
high-voltage, high-current, applications.
These new short circuit rated devices are especially suited for motor control
and other applications requiring short circuit withstand capability.
Absolute Maximum Ratings
Parameter
V
CES
I
C
@ T
C
= 25°C
I
C
@ T
C
= 100°C
I
CM
I
LM
I
F
@ T
C
= 100°C
I
FM
t
sc
V
GE
P
D
@ T
C
= 25°C
P
D
@ T
C
= 100°C
T
J
T
STG
Collector-to-Emitter Voltage
Continuous Collector Current
Continuous Collector Current
Pulsed Collector Current
Clamped Inductive Load Current
Diode Continuous Forward Current
Diode Maximum Forward Current
Short Circuit Withstand Time
Gate-to-Emitter Voltage
Maximum Power Dissipation
Maximum Power Dissipation
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 sec.
Mounting Torque, 6-32 or M3 Screw.
TO -2 4 7 AC
Max.
600
26
16
52
52
12
52
10
± 20
100
42
-55 to +150
300 (0.063 in. (1.6mm) from case)
10 lbf•in (1.1 N•m)
Units
V
A
µs
V
W
°C
Thermal Resistance
Parameter
R
θJC
R
θJC
R
θCS
R
θJA
Wt
Junction-to-Case - IGBT
Junction-to-Case - Diode
Case-to-Sink, flat, greased surface
Junction-to-Ambient, typical socket mount
Weight
Min.
------
------
------
-----
------
Typ.
------
------
0.24
-----
6 (0.21)
Max.
1.2
2.5
------
40
------
Units
°C/W
g (oz)
IRGPC30MD2
Electrical Characteristics @ T
J
= 25°C (unless otherwise specified)
Parameter
Min.
V
(BR)CES
Collector-to-Emitter Breakdown Voltage 600
∆V
(BR)CES
/∆T
J
Temperature Coeff. of Breakdown Voltage----
Collector-to-Emitter Saturation Voltage
----
V
CE(on)
----
----
V
GE(th)
Gate Threshold Voltage
3.0
∆V
GE(th)
/∆T
J
Temperature Coeff. of Threshold Voltage ----
Forward Transconductance
3.3
g
fe
Zero Gate Voltage Collector Current
----
I
CES
----
V
FM
Diode Forward Voltage Drop
----
----
Gate-to-Emitter Leakage Current
----
I
GES
Typ.
----
0.65
1.9
2.7
2.2
----
-12
6.5
----
----
1.4
1.3
----
Max. Units
Conditions
----
V
V
GE
= 0V, I
C
= 250µA
---- V/°C V
GE
= 0V, I
C
= 1.0mA
2.9
I
C
= 16A
V
GE
= 15V
See Fig. 2, 5
----
V
I
C
= 26A
----
I
C
= 16A, T
J
= 150°C
5.5
V
CE
= V
GE
, I
C
= 250µA
---- mV/°C V
CE
= V
GE
, I
C
= 250µA
----
S
V
CE
= 100V, I
C
= 16A
250
µA
V
GE
= 0V, V
CE
= 600V
2500
V
GE
= 0V, V
CE
= 600V, T
J
= 150°C
1.7
V
I
C
= 12A
See Fig. 13
1.6
I
C
= 12A, T
J
= 150°C
±100 nA
V
GE
= ±20V
Switching Characteristics @ T
J
= 25°C (unless otherwise specified)
Max. Units
Conditions
53
I
C
= 16A
Q
g
11
nC
V
CC
= 400V
Q
ge
21
See Fig. 8
Q
gc
----
T
J
= 25°C
t
d(on)
t
r
----
ns
I
C
= 16A, V
CC
= 480V
500
V
GE
= 15V, R
G
= 23Ω
t
d(off)
470
Energy losses include "tail" and
t
f
----
diode reverse recovery.
E
on
----
mJ See Fig. 9, 10, 11, 18
E
off
E
ts
5.4
----
µs
V
CC
= 360V, T
J
= 125°C
t
sc
V
GE
= 15V, R
G
= 23Ω, V
CPK
< 500V
Turn-On Delay Time
----
66
----
T
J
= 150°C,
See Fig. 9, 10, 11, 18
t
d(on)
Rise Time
---- 120 ----
ns
I
C
= 14A, V
CC
= 480V
t
r
t
d(off)
Turn-Off Delay Time
---- 580 ----
V
GE
= 15V, R
G
= 23Ω
Fall Time
---- 630 ----
Energy losses include "tail" and
t
f
Total Switching Loss
---- 5.7 ----
mJ diode reverse recovery.
E
ts
Internal Emitter Inductance
----
13
----
nH
Measured 5mm from package
L
E
Input Capacitance
---- 750 ----
V
GE
= 0V
C
ies
C
oes
Output Capacitance
---- 110 ----
pF
V
CC
= 30V
See Fig. 7
Reverse Transfer Capacitance
---- 9.3 ----
ƒ = 1.0MHz
C
res
Diode Reverse Recovery Time
----
42
60
ns
T
J
= 25°C See Fig.
t
rr
----
80 120
T
J
= 125°C
14
I
F
= 12A
Diode Peak Reverse Recovery Current ---- 3.5 6.0
A
T
J
= 25°C See Fig.
I
rr
---- 5.6
10
T
J
= 125°C
15
V
R
= 200V
Diode Reverse Recovery Charge
----
80 180
nC T
J
= 25°C See Fig.
Q
rr
---- 220 600
T
J
= 125°C
16
di/dt = 200A/
180
µs
di
(rec)M
/dtDiode Peak Rate of Fall of Recovery ----
----
A/µs
T
J
= 25°C See Fig.
During t
b
----
120
Notes:
----
T
J
= 125°C
CC
=80%(V
CES
), V
GE
=20V, L=10µH,
17
V
Pulse width 5.0µs,
R
G
= 23Ω, ( See fig. 19 )
single shot.
Repetitive rating; V
GE
=20V, pulse width limited
by max. junction temperature. ( See fig. 20 )
Pulse width
≤
80µs; duty factor
≤
0.1%.
Parameter
Total Gate Charge (turn-on)
Gate - Emitter Charge (turn-on)
Gate - Collector Charge (turn-on)
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Turn-On Switching Loss
Turn-Off Switching Loss
Total Switching Loss
Short Circuit Withstand Time
Min.
----
----
----
----
----
----
----
----
----
----
10
Typ.
35
7.4
14
68
130
330
310
1.5
2.1
3.6
----
IRGPC30MD2
16
Duty cycle: 50%
TJ = 125°C
Tsink = 90°C
Gate drive as specified
Turn-on losses include
effects of reverse recovery
Power Dissipation = 21W
12
Load Current (A)
8
60% of rated
voltage
4
0
0.1
1
10
A
100
f, Frequency (kHz)
Fig. 1
- Typical Load Current vs. Frequency
(Load Current = I
RMS
of fundamental)
100
100
I
C
, Collector-to-Emitter Current (A)
T = 25°C
J
10
T
J
= 150°C
I
C
, Collector-to-Emitter Current (A)
T
J
= 150°C
10
T
J
= 25°C
1
0.1
0.1
1
V
GE
= 15V
20µs PULSE WIDTH
A
10
1
5
10
V
CC
= 100V
5µs PULSE WIDTH
A
15
20
V
CE
, Collector-to-Emitter Voltage (V)
V
GE
, Gate-to-Emitter Voltage (V)
Fig. 2
- Typical Output Characteristics
Fig. 3
- Typical Transfer Characteristics
IRGPC30MD2
30
25
V
CE
, Collector-to-Emitter Voltage (V)
Maximum DC Collector Current (A)
V
GE
= 15V
5.0
V
GE
= 15V
80µs PULSE WIDTH
I
C
= 32A
4.0
20
3.0
15
I
C
= 16A
2.0
10
I
C
= 8.0A
1.0
5
0
25
50
75
100
125
A
150
0.0
-60
A
-40
-20
0
20
40
60
80
100 120 140 160
T
C
, Case Temperature (°C)
T
C
, Case Temperature (°C)
Fig. 4
- Maximum Collector Current vs.
Case Temperature
Fig. 5
- Collector-to-Emitter Voltage vs.
Case Temperature
10
Thermal Response (Z
thJC
)
1
D = 0.50
0.20
0.10
P
DM
0.1
0.05
0.02
0.01
SINGLE PULSE
(THERMAL RESPONSE)
t1
t2
Notes:
1. Duty factor D = t
1
/t
2
0.01
0.00001
2. Peak TJ = PDM x Z thJC + T C
0.0001
0.001
0.01
0.1
1
10
t
1
, Rectangular Pulse Duration (sec)
Fig. 6
- Maximum Effective Transient Thermal Impedance, Junction-to-Case
IRGPC30MD2
1400
1200
V
GE
, Gate-to-Emitter Voltage (V)
A
V
GE
= 0V,
f = 1MHz
C
ies
= C
ge
+ C
gc
, C
ce
SHORTED
C
res
= C
gc
C
oes
= C
ce
+ C
gc
20
V
CE
= 400V
I
C
= 16A
16
C, Capacitance (pF)
1000
C
ies
800
12
C
oes
600
8
400
4
200
C
res
0
1
10
0
0
10
20
30
A
40
100
V
CE
, Collector-to-Emitter Voltage (V)
Q
g
, Total Gate Charge (nC)
Fig. 7 -
Typical Capacitance vs.
Collector-to-Emitter Voltage
Fig. 8
- Typical Gate Charge vs.
Gate-to-Emitter Voltage
3.80
3.76
Total Switching Losses (mJ)
3.72
3.68
3.64
3.60
3.56
3.52
3.48
3.44
3.40
0
Total Switching Losses (mJ)
V
CC
= 480V
V
GE
= 15V
T
C
= 25°C
I
C
= 16A
100
R
G
= 23Ω
V
GE
= 15V
V
CC
= 480V
I
C
= 32A
10
I
C
= 16A
I
C
= 8.0A
1
A
10
20
30
40
50
60
0.1
-60
-40
-20
0
20
40
60
80
A
100 120 140 160
R
G
, Gate Resistance (
Ω
)
T
C
, Case Temperature (°C)
Fig. 9
- Typical Switching Losses vs. Gate
Resistance
Fig. 10
- Typical Switching Losses vs.
Case Temperature
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