MCC
Features
•
•
•
omponents
21201 Itasca Street Chatsworth
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1N746
THRU
1N759
Zener Voltage 3.3V to 12V
Silicon Planar Power Zener Diodes
Standards zener voltage tolerance is ±10% , Add suffix “A” for
±5% tolerance, other tolerances are available upon request
0.5W Silicon Planar
Zener Diodes
•
•
•
Mechanical Data
Case: DO-35 glass case
Polarity: Color band denotes cathode end
Weight: Approx. 0.13 gram
DO-35
Maximum Ratings
Symbol
Zener Current
Power Dissipation
@ T
A
=50
o
C
Junction Temperature
Storage Temperature
Range
P
tot
T
J
T
STG
Value
See Table 1
500
175
-65 to 175
Units
mW
o
o
D
C
C
A
Cathode
Mark
B
D
Electrical Characteristics @ 25°C Unless Otherwise Specified
Symbol
Thermal resistance
Forward Voltage
@ I
F
=200mA
R
q
JA
Maximum
300
1.5
o
Unit
C/W
V
C
V
F
NOTE:
1) Valid provided that a distance of 8mm from case are kept
at ambient temperature
2) Power derating: 4.0mW/
o
C above 50
o
C
DIM
A
B
C
D
DIMENSIONS
INCHES
MIN
---
---
---
1.000
MM
MIN
---
---
---
25.40
MAX
.166
.079
.020
---
MAX
4.2
2.00
.52
---
NOTE
www.mccsemi.com
1N746 thru 1N759
MCC
MCC PART
NUMBER
1N746
1N747
1N748
1N749
1N750
1N751
1N752
1N753
1N754
1N755
1N756
1N757
1N758
1N759
NORMAL
ZENER
VOLTAGE
Vz@ Izt
VOLTS
3.3
3.6
3.9
4.3
4.7
5.1
5.6
6.2
6.8
7.5
8.2
9.1
10
12
MAXIMUM
MAXIMUM
ZENER
ZENER
MAXIMUM REVERSE
TEST
CURRENT IMPEDANCE LEAKAGE CURRENT CURRENT TYPICAL TEMP.
I
ZM
Zzt @ Izt
Ir @ Vr=1V
Izt
COEFFICIENT
o
C uA @125
o
C
mA
OHMS
uA @25
mA
%/
o
C
20
28
10
30
110
-.066
20
24
10
30
100
-.058
20
23
10
30
95
-.046
20
22
2
30
85
-.033
20
19
2
30
75
-.015
20
17
1
20
70
±.010
20
11
1
20
65
+.030
20
7.0
0.1
20
60
+.049
20
5.0
0.1
20
55
+.053
20
6.0
0.1
20
50
+.057
20
8.0
0.1
20
45
+.060
20
10
0.1
20
40
+.061
20
17
0.1
20
35
+.062
20
30
0.1
20
30
+.062
Note:
1) Tested with pulses t
p
= 20ms
2) Valid provided that leads are kept at ambient temperature at a
distance of 8mm from case.
3) Zener impedance derived by superimposing on I
ZT
, a 60 cps, rms
ac current equal to 10% I
ZT
(2 mA ac)
4) Allowance has been made for the increase in V
Z
due to Z
Z
and for
the increase in junction temperature as the unit approaches
thermal equilibrium at the power dissipation of 400mW.
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