July 1996
NDT451AN
N-Channel Enhancement Mode Field Effect Transistor
General Description
Power SOT N-Channel enhancement mode power field
effect transistors are produced using Fairchild's
proprietary, high cell density, DMOS technology. This very
high density process is especially tailored to minimize
on-state resistance and provide superior switching
performance. These devices are particularly suited for low
voltage applications such as DC motor control and DC/DC
conversion where fast switching, low in-line power loss,
and resistance to transients are needed.
Features
7.2A, 30V. R
DS(ON)
= 0.035
Ω
@ V
GS
= 10V
R
DS(ON)
= 0.05
Ω
@ V
GS
= 4.5V.
High density cell design for extremely low R
DS(ON)
.
High power and current handling capability in a widely used
surface mount package.
________________________________________________________________________________
D
D
G
D
S
G
S
Absolute Maximum Ratings
Symbol
V
DSS
V
GSS
I
D
Parameter
Drain-Source Voltage
Gate-Source Voltage
Drain Current - Continuous
- Pulsed
P
D
Maximum Power Dissipation
T
A
= 25°C unless otherwise noted
NDT451AN
30
± 20
(Note 1a)
Units
V
V
A
± 7.2
± 25
(Note 1a)
(Note 1b)
(Note 1c)
3
1.3
1.1
-65 to 150
W
T
J
,T
STG
Operating and Storage Temperature Range
°C
THERMAL CHARACTERISTICS
R
θ
JA
R
θ
JC
Thermal Resistance, Junction-to-Ambient
Thermal Resistance, Junction-to-Case
(Note 1a)
(Note 1)
42
12
°C/W
°C/W
* Order option J23Z for cropped center drain lead.
© 1997 Fairchild Semiconductor Corporation
NDT451AN Rev. D
Electrical Characteristics
(T
A
= 25°C unless otherwise noted)
Symbol
Parameter
Conditions
Min
Typ
Max
Units
OFF CHARACTERISTICS
BV
DSS
I
DSS
I
GSSF
I
GSSR
V
GS(th)
R
DS(ON)
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
V
GS
= 0 V, I
D
= 250 µA
V
DS
= 24 V, V
GS
= 0 V
T
J
= 55°C
Gate - Body Leakage, Forward
Gate - Body Leakage, Reverse
V
GS
= 20 V, V
DS
= 0 V
V
GS
= -20 V, V
DS
= 0 V
V
DS
= V
GS
, I
D
= 250 µA
T
J
= 125°C
Static Drain-Source On-Resistance
V
GS
= 10 V, I
D
= 7.2 A
T
J
= 125°C
V
GS
= 4.5 V, I
D
= 6.0 A
T
J
= 125°C
I
D(on)
g
FS
C
iss
C
oss
C
rss
t
D(on)
t
r
t
D(off)
t
f
Q
g
Q
gs
Q
gd
On-State Drain Current
V
GS
= 10 V, V
DS
= 5 V
V
GS
= 4.5 V, V
DS
= 5 V
Forward Transconductance
V
DS
= 10 V, I
D
= 7.2 A
V
DS
= 15 V, V
GS
= 0 V,
f = 1.0 MHz
DYNAMIC CHARACTERISTICS
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
720
370
250
pF
pF
pF
25
15
11
S
1
0.7
1.6
1.2
0.03
0.042
0.042
0.058
30
1
10
100
-100
V
µA
µA
nA
nA
ON CHARACTERISTICS
(Note 2)
Gate Threshold Voltage
3
2.2
0.035
0.063
0.05
0.09
A
V
Ω
SWITCHING CHARACTERISTICS
(Note 2)
Turn - On Delay Time
Turn - On Rise Time
Turn - Off Delay Time
Turn - Off Fall Time
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
V
DS
= 10 V,
I
D
= 7.2 A, V
GS
= 10 V
V
DD
= 10 V, I
D
= 1 A,
V
GEN
= 10 V, R
GEN
= 6
Ω
12
13
29
10
19
2.3
5.5
20
30
50
20
30
ns
ns
ns
ns
nC
nC
nC
NDT451AN Rev. D
Electrical Characteristics
(T
A
= 25°C unless otherwise noted)
Symbol
Parameter
Conditions
Min
Typ
Max
Units
DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS
I
S
V
SD
t
rr
Notes:
1. R
θ
JA
is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins. R
θ
JC
is guaranteed by
design while R
θ
CA
is determined by the user's board design.
Maximum Continuous Drain-Source Diode Forward Current
Drain-Source Diode Forward Voltage
Reverse Recovery Time
V
GS
= 0 V, I
S
= 7.2A
(Note 2)
2.3
0.9
1.3
100
A
V
ns
V
GS
= 0 V, I
F
= 1.25 A, dI
F
/dt = 100 A/µs
P
D
(
t
) =
R
θ
J A
t
)
(
T
J
−
T
A
=
T
J
−
T
A
R
θ
J C
R
θ
CA
t
)
+
(
=
I
2
(
t
) ×
R
DS
(
ON
)
D
T
J
Typical R
θ
JA
using the board layouts shown below on 4.5"x5" FR-4 PCB in a still air environment:
a. 42
o
C/W when mounted on a 1 in
2
pad of 2oz copper.
b. 95
o
C/W when mounted on a 0.066 in
2
pad of 2oz copper.
c. 110
o
C/W when mounted on a 0.0123 in
2
pad of 2oz copper.
1a
1b
1c
Scale 1 : 1 on letter size paper
2. Pulse Test: Pulse Width < 300µs, Duty Cycle < 2.0%.
NDT451AN Rev. D
Typical Electrical Characteristics
25
3
V
GS
=10V
I
D
, DRAIN-SOURCE CURRENT (A)
20
6.0 5.0
4.5
DRAIN-SOURCE ON-RESISTANCE
V
GS
= 3.0V
4.0
R
DS(ON)
, NORMALIZED
2.5
3.5
15
2
4.0
4.5
3.5
10
1.5
5.0
6.0
10
5
3.0
1
0
0
0.5
1
1.5
2
V
DS
, DRAIN-SOURCE VOLTAGE (V)
2.5
3
0.5
0
5
10
15
I
D
, DRAIN CURRENT (A)
20
25
Figure 1. On-Region Characteristics.
Figure 2. On-Resistance Variation with Gate
Voltage and Drain Current.
1.6
2
1.4
R
DS(ON)
, NORMALIZED
V
GS
=10V
R
DS(ON)
, NORMALIZED
DRAIN-SOURCE ON-RESISTANCE
DRAIN-SOURCE ON-RESISTANCE
I
D
= 7.2A
V
GS
= 10V
1.75
1.5
TJ = 125°C
1.2
1.25
1
25°C
1
0.8
-55°C
0.75
0.6
-50
-25
0
25
50
75
100
T
J
, JUNCTION TEMPERATURE (°C)
125
150
0.5
0
5
10
15
I
D
, DRAIN CURRENT (A)
20
25
Figure 3. On-Resistance Variation with
Temperature.
Figure 4. On-Resistance Variation with Drain
Current and Temperature.
25
1.2
125°C
V
th
, NORMALIZED
GATE-SOURCE THRESHOLD VOLTAGE
V
DS
= 10V
20
I
D
, DRAIN CURRENT (A)
TJ = -55°C
25°C
1.1
V
DS
= V
GS
I
D
= 250µA
1
15
0.9
10
0.8
5
0.7
0
1
2
3
4
5
V
GS
, GATE TO SOURCE VOLTAGE (V)
6
0.6
-50
-25
0
25
50
75
100
T , JUNCTION TEMPERATURE (°C)
J
125
150
Figure 5. Transfer Characteristics.
Figure 6. Gate Threshold Variation with
Temperature.
NDT451AN Rev. D
Typical Electrical Characteristics
1.1
DRAIN-SOURCE BREAKDOWN VOLTAGE
25
I
1.05
D
= 250µA
I
S
, REVERSE DRAIN CURRENT (A)
10
V
GS
=0V
BV
DSS
, NORMALIZED
1
TJ = 125°C
0.1
1
25°C
-55°C
0.95
0.01
0.9
-50
-25
0
25
50
75
100
T
J
, JUNCTION TEMPERATURE (°C)
125
150
0.001
0.2
0.4
0.6
0.8
1
1.2
1.4
V
SD
, BODY DIODE FORWARD VOLTAGE (V)
Figure 7. Breakdown Voltage Variation with
Temperature.
Figure 8. Body Diode Forward Voltage Variation
with Current and Temperature
.
2000
1500
V
GS
, GATE-SOURCE VOLTAGE (V)
1000
CAPACITANCE (pF)
10
I
D
= 7.2A
8
V
DS
= 5V
10V
20V
C iss
500
6
C oss
4
200
f = 1 MHz
V
GS
= 0V
C rss
2
100
0.1
0.2
V
0.5
DS
1
2
5
10
20
30
0
0
5
10
15
Q
g
, GATE CHARGE (nC)
20
25
, DRAIN TO SOURCE VOLTAGE (V)
Figure 9. Capacitance Characteristics.
Figure 10. Gate Charge Characteristics.
20
g
FS
, TRANSCONDUCTANCE (SIEMENS)
V
DS
= 10V
16
TJ = -55°C
25°C
12
125°C
8
4
0
0
5
10
15
20
25
I
D
, DRAIN CURRENT (A)
Figure 11. Transconductance Variation with Drain
Current and Temperature.
NDT451AN Rev. D
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