v00.0904
HMC519
GaAs PHEMT MMIC LOW NOISE
AMPLIFIER, 18 - 32 GHz
1
AMPLIFIERS - CHIP
Typical Applications
The HMC519 is ideal for use as either a LNA or
driver amplifier for:
• Point-to-Point Radios
• Point-to-Multi-Point Radios & VSAT
• Test Equipment & Sensors
• Military & Space
Features
Noise Figure: 2.8 dB
Gain: 15 dB
OIP3: 23 dBm
Single Supply: +3V @ 65 mA
50 Ohm Matched Input/Output
Functional Diagram
General Description
The HMC519 chip is a high dynamic range GaAs
PHEMT MMIC Low Noise Amplifier (LNA) which
covers the 18 to 32 GHz frequency range. The
HMC519 provides 15 dB of small signal gain,
2.8 dB of noise figure and has an output IP3
greater than 23 dBm. The chip can easily be
integrated into hybrid or MCM assemblies due to
its small size. All data is tested with the chip in a
50 Ohm test fixture connected via 0.075 mm (3
mil) ribbon bonds of minimal length 0.31 mm (12
mil). Two 0.025 mm (1 mil) diameter bondwires
may also be used to make the RFIN and RFOUT
connections.
Electrical Specifi cations,
T
A
= +25° C, Vdd 1, 2, 3 = +3V
Parameter
Frequency Range
Gain
Gain Variation Over Temperature
Noise Figure
Input Return Loss
Output Return Loss
Output Power for 1 dB Compression (P1dB)
Saturated Output Power (Psat)
Output Third Order Intercept (IP3)
Supply Current (Idd)(Vdd = +3V)
9
12
Min.
Typ.
18 - 28
15
0.015
2.8
13
12
12
15
23
65
10
0.025
3.5
11
Max.
Min.
Typ.
28 - 32
14
0.015
3.5
9
12
14
18
26
65
0.025
4.5
Max.
Units
GHz
dB
dB/ °C
dB
dB
dB
dBm
dBm
dBm
mA
1 - 166
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
v00.0904
HMC519
GaAs PHEMT MMIC LOW NOISE
AMPLIFIER, 18 - 32 GHz
Broadband Gain & Return Loss
20
15
10
RESPONSE (dB)
Gain vs. Temperature
20
18
16
14
GAIN (dB)
1
AMPLIFIERS - CHIP
1 - 167
5
0
-5
-10
S21
S11
S22
12
10
8
6
4
+25C
+85C
-55C
-15
-20
12
14
16
18
20
22
24
26
28
30
32
34
36
FREQUENCY (GHz)
2
0
16
18
20
22
24
26
28
30
32
34
FREQUENCY (GHz)
Input Return Loss vs. Temperature
0
Output Return Loss vs. Temperature
0
RETURN LOSS (dB)
-10
RETURN LOSS (dB)
-5
+25C
+85C
-55C
-5
+25C
+85C
-55C
-10
-15
-15
-20
16
18
20
22
24
26
28
30
32
34
FREQUENCY (GHz)
-20
16
18
20
22
24
26
28
30
32
34
FREQUENCY (GHz)
Noise Figure vs. Temperature
10
9
8
NOISE FIGURE (dB)
7
6
5
4
3
2
1
0
16
18
20
22
24
26
28
30
32
34
FREQUENCY (GHz)
+25C
+85C
-55C
Output IP3 vs. Temperature
35
30
25
OIP3 (dBm)
20
15
10
5
0
16
18
20
22
24
26
28
30
32
34
FREQUENCY (GHz)
+25C
+85C
-55C
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
v00.0904
HMC519
GaAs PHEMT MMIC LOW NOISE
AMPLIFIER, 18 - 32 GHz
1
AMPLIFIERS - CHIP
P1dB vs. Temperature
20
18
16
14
P1dB (dBm)
12
10
8
6
4
2
0
16
18
20
22
24
26
28
30
32
34
FREQUENCY (GHz)
+25C
+85C
-55C
Psat vs. Temperature
20
18
16
14
Psat (dBm)
12
10
8
6
4
2
0
16
18
20
22
24
26
28
30
32
34
FREQUENCY (GHz)
+25C
+85C
-55C
Reverse Isolation vs. Temperature
0
-10
-20
ISOLATION (dB)
-30
-40
-50
-60
-70
-80
16
18
20
22
24
26
28
30
32
34
FREQUENCY (GHz)
+25C
+85C
-55C
Power Compression @ 24 GHz
20
Pout (dBm), GAIN (dB), PAE (%)
18
16
14
12
10
8
6
4
2
0
-20 -18 -16 -14 -12 -10
-8
-6
-4
-2
0
2
4
Pout
Gain
PAE
INPUT POWER (dBm)
Gain, Noise Figure & Power vs.
Supply Voltage @ 24 GHz
20
18
GAIN (dB), P1dB (dBm)
16
14
12
10
8
6
4
2
0
2.5
3
Vdd (Vdc)
Noise Figure
P1dB
Gain
10
9
8
7
6
5
4
3
2
1
0
3.5
NOISE FIGURE (dB)
1 - 168
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
v00.0904
HMC519
GaAs PHEMT MMIC LOW NOISE
AMPLIFIER, 18 - 32 GHz
Absolute Maximum Ratings
Drain Bias Voltage (Vdd1, Vdd2, Vdd3)
RF Input Power (RFin)(Vdd = +3.0 Vdc)
Channel Temperature
Continuous Pdiss (T= 85 °C)
(derate 29 mW/°C above 85 °C)
Thermal Resistance
(channel to die bottom)
Storage Temperature
Operating Temperature
ESD Sensitivity (HBM)
+5.5 Vdc
+10 dBm
175 °C
2.65 W
34 °C/W
-65 to +150 °C
-55 to +85 °C
Class 1A
Typical Supply Current vs. Vdd
Vdd (Vdc)
+2.5
+3.0
+3.5
Idd (mA)
61
65
69
1
AMPLIFIERS - CHIP
1 - 169
Note: Amplifi er will operate over full voltage ranges
shown above.
ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
Outline Drawing
Die Packaging Information
[1]
Standard
GP-1
Alternate
[2]
[1] Refer to the “Packaging Information” section for die
packaging dimensions.
[2] For alternate packaging information contact Hittite
Microwave Corporation.
NOTES:
1. ALL DIMENSIONS ARE IN INCHES [MM]
2. DIE THICKNESS IS .004”
3. TYPICAL BOND IS .004” SQUARE
4. BACKSIDE METALLIZATION: GOLD
5. BOND PAD METALLIZATION: GOLD
6. BACKSIDE METAL IS GROUND.
7. CONNECTION NOT REQUIRED FOR UNLABELED BOND PADS.
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
v00.0904
HMC519
GaAs PHEMT MMIC LOW NOISE
AMPLIFIER, 18 - 32 GHz
1
AMPLIFIERS - CHIP
Pad Descriptions
Pad Number
1
Function
RF IN
Description
This pad is AC coupled and matched to 50 Ohms from
18 - 32 GHz.
Interface Schematic
2, 3, 4
Vdd1, 2, 3
Power Supply Voltage for the amplifier. External bypass
capacitors of 100 pF and 0.1 µF are required.
5
RF OUT
This pad is AC coupled and matched to 50 Ohms from
18 - 32 GHz.
These pads must be connected to RF/DC ground for proper
operation.
6, 7, 8
G3, 2, 1
Die Bottom
GND
Die Bottom must be connected to RF/DC ground.
Assembly Diagram
Note: G1, G2 and G3 must be connected to RF/DC ground.
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
1 - 170
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