MRF5812, R1, R2
MRF5812G, R1, R2
* G Denotes RoHS Compliant, Pb free Terminal Finish
Features
•
•
•
•
Low Noise - 2.5 dB @ 500 MHZ
Associated Gain = 15.5 dB @ 500 MHz
Ftau - 5.0 GHz @ 10v, 75mA
Cost Effective SO-8 package
SO-8
R1 suffix–Tape and Reel, 500 units
R2 suffix–Tape and Reel, 2500 units
DESCRIPTION:
Designed for high current, low power, low noise, amplifiers up to 1.0 GHz.
ABSOLUTE MAXIMUM RATINGS
(Tcase = 25
°
C)
Symbol
V
CEO
V
CBO
V
EBO
I
C
Parameter
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Collector Current
Value
15
30
2.5
200
Unit
Vdc
Vdc
Vdc
mA
Thermal Data
P
D
Total Device Dissipation @ TC = 25ºC
Derate above 25ºC
1.25
10
Watts
mW/ ºC
Advanced Power Technology reserves the right to change, without notice, the specifications and information contained herein
Visit our website at
WWW.ADVANCEDPOWER.COM
or contact our factory direct.
Rev A 9/2005
MRF5812, R1, R2
MRF5812G, R1, R2
ELECTRICAL SPECIFICATIONS (Tcase = 25°C)
STATIC
(off)
Symbol
BVCEO
BVCBO
BVEBO
ICBO
IEBO
Test Conditions
Collector-Emitter Breakdown Voltage
(IC = 5.0 mAdc, IB = 0)
Collector-Base Breakdown Voltage
(IC = 1.0 mAdc, IE = 0)
Emitter-Base Breakdown Voltage
(IE = 0.1 mAdc, IC = 0)
Collector Cutoff Current
(VCB = 15 Vdc, VBE = 0 Vdc)
Emitter Cutoff Current
(VCE = 2.0 Vdc, VBE = 0 Vdc)
Value
Min.
15
30
2.5
-
-
Typ.
-
-
-
-
-
Max.
-
-
-
0.1
0.1
Unit
Vdc
Vdc
Vdc
mA
mA
(on)
HFE
DC Current Gain
(IC = 50 mAdc, VCE = 5.0 Vdc)
50
200
DYNAMIC
Symbol
COB
Ftau
Test Conditions
Output Capacitance
(VCB = 10 Vdc, IE = 0, f = 1.0 MHz)
Current-Gain Bandwidth Product
(IC = 75 mAdc, VCE = 10 Vdc, f = 1.0 GHz)
Value
Min.
-
-
Typ.
1.4
5.0
Max.
2.0
-
Unit
pF
GHz
Advanced Power Technology reserves the right to change, without notice, the specifications and information contained herein
Visit our website at
WWW.ADVANCEDPOWER.COM
or contact our factory direct.
Rev A 9/2005
MRF5812, R1, R2
MRF5812G, R1, R2
FUNCTIONAL
Symbol
NFmin
Test Conditions
Minimum Noise Figure
(IC = 50 mAdc, VCE = 10 Vdc, f = 500 MHz)
Power Gain @ Nfmin
(IC = 50 mAdc, VCE = 10 Vdc, f = 500 MHz)
Maximum Unilateral Gain (1)
IC = 50 mAdc, VCE = 10 Vdc, f = 500 MHz
Maximum Stable Gain
IC = 50 mAdc, VCE = 10 Vdc, f = 500 MHz
Insertion Gain
IC = 50 mAdc, VCE = 10 Vdc, f = 500 MHz
Value
Min.
-
13
-
-
-
Typ.
2.0
15.5
17.8
20
15
-
-
-
Max.
3.0
Unit
dB
dB
dB
dB
dB
G
G
NF
U max
MSG
|S
21
|
2
Table 1. Common Emitter S-Parameters, @ VCE = 10 V, IC = 50 mA
f
S11
S21
S12
S22
(MHz)
100
300
500
1000
2000
3000
|S11|
.579
.593
.598
.592
.615
.691
∠φ
-141
-173
175
158
115
72
|S21|
24
8.93
5.14
2.64
1.55
1.10
∠φ
107
85
74
52
20
-5
|S12|
.024
.045
.066
.132
.310
.518
∠φ
49
66
69
72
63
41
|S22|
.397
.233
.248
.347
.531
.648
∠φ
-76
-103
-110
-119
-141
-172
Advanced Power Technology reserves the right to change, without notice, the specifications and information contained herein
Visit our website at
WWW.ADVANCEDPOWER.COM
or contact our factory direct.
Rev A 9/2005
MRF5812, R1, R2
MRF5812G, R1, R2
GPE Freq (MHz)
(MHz)
Pout (watts)
Efficiency (%)
Gu Max (dB)
IC max (mA)
SO-8
TO-39
POWER MACRO
POWER MACRO
TO-39
TO-39
TO-72
MRF4427, R2
2N4427
MRF553
MRF553T
MRF607
2N6255
2N5179
NPN
NPN
NPN
NPN
NPN
NPN
NPN
175 0.15
175
1
175 1.5
175 1.5
175 1.75
175
3
200
18
10
11.5
11.5
11.5
7.8
20
60
50
60
50
50
50
12
12
12.5
12.5
12.5
12.5
6
20 400
20 400
16 500
16 500
16 330
18 1000
12 50
TO-39
TO-39
SO-8
TO-72
TO-72
TO-39
TO-72
TO-72
MACRO T
MACRO T
SO-8
MACRO X
Macro
TO-72
TO-72
MACRO X
TO-39
2N5109
MRF5943C
2N5179
2N2857
MRF517
MRF904
2N6304
BFR91
BFR96
MRF581A
BFR90
BFY90
MRF914
MRF581
MRF586
NPN 200
NPN 200
NPN 200
NPN 300
NPN 300
NPN 450
NPN 450
NPN 500
NPN 500
NPN 500
NPN 500
NPN 500
NPN 500
NPN 500
NPN 500
3
10 15
15
6
6
12
15
17
13
1200
1300
900
1600
3.5
3.4 30 15
3.4 30
4.5 1.5
5.5 50
11.4 1000
1
1
3
1
1
1
2.6
MRF5943, R1, R2 NPN 200
7.5 50 15
1.5
5
1.9
2
2
2
2.4
2.5
2.5
3
5
2
2
10
50
50
2
2
5
6
5
5
10
10
10
5
10
10
15
11
14
15
11
5.5 4600
11
14
14.5
15
18
20
15
4000
1400
500
5000
5000
1300
4500
16.5 5000
MACRO X
MRF559
MACRO X
MRF559
TO-39
2N3866A
SO-8
MRF3866, R1, R2
POWER MACRO
MRF555
POWER MACRO
MRF555T
NPN
NPN
NPN
NPN
NPN
NPN
512
512
400
400
470
470
0.5
0.5
1
1
1.5
1.5
10
13
10
10
11
11
6.5
9.5
8
8
8
65 7.5 16 150
60 12.5 16 150
45 28 30 400
45 28 30 400
50 12.5 16 400
50 12.5 16 400
70
65
55
55
55
7.5
12.5
12.5
12.5
12.5
16
16
16
16
16
150
150
200
400
400
MRF5812, R1, R2 NPN 500
10 15.5 17.8 5000
1
2.5 50
17.8 5000
14.5 4500
2.2
90 15
MACRO X
MRF559
NPN 870 0.5
MACRO X
MRF559
NPN 870 0.5
SO-8
MRF8372,R1,R2 NPN 870 0.75
POWER MACRO
MRF557
NPN 870 1.5
POWER MACRO
MRF557T
NPN 870 1.5
MACRO X
MACRO X
MACRO T
MACRO T
MRF951
MRF571
BFR91
BFR90
NPN 1000 1.3
NPN 1000 2.5
NPN 1000
3
5
2
2
6
6
5
10
14
10
8
10
17
11
8000 0.45 10 100
8000
5000
1
1
1
10
12
15
70
35
30
NPN 1000 1.5 10
12.5 5000
TO-39
TO-39
MRF545
MRF544
PNP
NPN
14 1400
13.5 1500
2
RF (Low Power PA / General Purpose) Selection Guide
RF (LNA / General Purpose) Selection Guide
1
1
2
3
4
3
3
2
4
2
1
8
5
4
Macro T
Macro X
Power Macro
Advanced Power Technology reserves the right to change, without notice, the specifications and information contained herein
Visit our website at
WWW.ADVANCEDPOWER.COM
or contact our factory direct.
Rev A 9/2005
Ccb(pF)
BVCEO
IC max (mA)
20 400
30 400
30 400
12
15
50
40
25 150
15
15
12
30
50
35
15 100
15 200
15 200
15 30
15
12
50
40
16 200
17 200
NF (dB)
NF IC (mA)
NF VCE
GNF (dB)
Freq (MHz)
Package
Device
Ftau (MHz)
GPE (dB)
GPE VCC
Package
Device
BVCEO
Type
Type
70 400
70 400
MRF5812, R1, R2
MRF5812G, R1, R2
PIN 1. EMITTER
2. COLLECTOR
3. COLLECTOR
4. EMITTER
5. EMITTER
6. BASE
7. BASE
8. EMITTER
8.
5.
1.
4.
Advanced Power Technology reserves the right to change, without notice, the specifications and information contained herein
Visit our website at
WWW.ADVANCEDPOWER.COM
or contact our factory direct.
Rev A 9/2005
微控制器 MCU
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