EGF1T
www.vishay.com
Vishay General Semiconductor
Surface Mount Glass Passivated Ultrafast Rectifier
FEATURES
• Superectifier structure for high reliability condition
• Cavity-free glass-passivated junction
SUPERECTIFIER
®
• Ideal for automated placement
• Ultrafast reverse recovery time
• Low switching losses, high efficiency
• Avalanche surge energy capability
• Meets environmental standard MIL-S-19500
DO-214BA (GF1)
• Meets MSL level 1, per J-STD-020, LF maximum peak of
250 °C
• AEC-Q101 qualified
• Compliant to RoHS Directive 2002/95/EC and in
accordance to WEEE 2002/96/EC
PRIMARY CHARACTERISTICS
I
F(AV)
V
RRM
I
FSM
t
rr
E
AS
T
J
max.
1.0 A
1300 V
20 A
75 ns
15 mJ
150 °C
TYPICAL APPLICATIONS
For use in high voltage rectification of photoflash
application.
MECHANICAL DATA
Case:
DO-214BA, molded plastic over glass body
Molding compound meets UL 94 V-0 flammability rating
Base P/N-E3 - RoHS compliant, commercial grade
Base P/NHE3 - RoHS compliant, AEC-Q101 qualified
Terminals:
Matte tin plated leads, solderable per
J-STD-002 and JESD 22-B102
E3 suffix meets JESD 201 class 1A whisker test, HE3 suffix
meets JESD 201 class 2 whisker test
Polarity:
Color band denotes cathode end
MAXIMUM RATINGS
(T
A
= 25 °C unless otherwise noted)
PARAMETER
Device marking code
Maximum repetitive peak reverse voltage
Maximum RMS voltage
Maximum DC blocking
Maximum average forward rectified current
Peak forward surge current 8.3 ms single half sine-wave
superimposed on rated load
Non-repetitive avalanche energy at T
A
= 25 °C, I
AS
= 1 A, L = 30 mH
Operating junction and storage temperature range
V
RRM
V
RMS
V
DC
I
F(AV)
I
FSM
E
AS
T
J
, T
STG
SYMBOL
EGF1T
ET
1300
910
1300
1.0
20
15
- 55 to + 150
V
V
V
A
A
mJ
°C
UNIT
Revision: 11-Oct-11
Document Number: 88904
1
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
EGF1T
www.vishay.com
Vishay General Semiconductor
ELECTRICAL CHARACTERISTICS
(T
A
= 25 °C unless otherwise noted)
PARAMETER
Maximum instantaneous forward voltage
Maximum DC reverse current
Typical reverse recovery time
Typical junction capacitance
Notes
(1)
Pulse test: 300 μs pulse width, 1 % duty cycle
(2)
Pulse test: Pulse width
40 ms
TEST CONDITIONS
1.0 A
V
RM
T
J
= 25 °C
T
J
= 25 °C
T
J
= 125 °C
SYMBOL
V
F (1)
I
R (2)
t
rr
C
J
EGF1T
3.0
5.0
50
75
8.0
UNIT
V
μA
ns
pF
I
F
= 0.5 A, I
R
=1.0 A,
I
rr
= 0.25 A
4.0 V, 1 MHz
THERMAL CHARACTERISTICS
(T
A
= 25 °C unless otherwise noted)
PARAMETER
Typical thermal resistance
SYMBOL
R
JA
(1)
R
JL
(1)
EGF1T
50
20
UNIT
°C/W
Note
(1)
Thermal resistance from junction to ambient and from junction to lead, PCB mounted on 0.95" x 0.95" (24 mm x 24 mm) copper pad areas
ORDERING INFORMATION
(Example)
PREFERRED P/N
EGF1T-E3/67A
EGF1T-E3/5CA
EGF1THE3/67A
(1)
EGF1THE3/5CA
(1)
(1)
UNIT WEIGHT (g)
0.104
0.104
0.104
0.104
PREFERRED PACKAGE CODE
67A
5CA
67A
5CA
BASE QUANTITY
1500
6500
1500
6500
DELIVERY MODE
7" diameter plastic tape and reel
13" diameter plastic tape and reel
7" diameter plastic tape and reel
13" diameter plastic tape and reel
Note
AEC-Q101 qualified
RATINGS AND CHARACTERISTICS CURVES
(T
A
= 25 °C unless otherwise noted)
1.5
25
Average Forward Current (A)
Forward Surge Current (A)
20
1.0
15
10
0.5
5
0
25
50
75
100
125
150
175
0
1
10
100
T
L
- Lead Temperature (°C)
Number of Cycles
Fig. 1 - Maximum Forward Current Derating Curve
Fig. 2 - Maximum Non-Repetitive Forward Surge Current
Revision: 11-Oct-11
Document Number: 88904
2
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
EGF1T
www.vishay.com
Vishay General Semiconductor
100
100
Instantaneous Forward Current (A)
10
T
J
= 150 °C
T
J
= 125 °C
Junction Capacitance (pF)
1
10
0.1
T
J
= 25 °C
0.01
0
0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5 6.0
1
0.1
1
10
100
Instantaneous Forward Voltage (V)
Reverse Voltage (V)
Fig. 3 - Typical Instantaneous Forward Characteristics
Fig. 5 - Typical Junction Capacitance Per Leg
100
T
J
= 150 °C
10
T
J
= 125 °C
1
100
Transient Thermal Impedance (°C/W)
Instantaneous Reverse Leakage
Current (µA)
10
0.1
T
J
= 25 °C
0.01
0.001
10
20
30
40
50
60
70
80
90
100
1
0.1
1
10
100
Percent of Rated Peak Reverse Voltage (%)
t - Pulse Duration (s)
Fig. 4 - Typical Reverse Leakage Characteristics
Fig. 6 - Typical Transient Thermal Impedance
PACKAGE OUTLINE DIMENSIONS
in inches (millimeters)
DO-214BA (GF1)
Cathode Band
Mounting Pad Layout
0.066 (1.68)
MIN.
0.076 (1.93)
MAX.
0.066 (1.68)
0.040 (1.02)
0.187 (4.75)
0.167 (4.24)
0.015 (0.38)
0.0065 (0.17)
0.060 (1.52)
MIN.
0.118 (3.00)
0.100 (2.54)
0.108 (2.74)
0.098 (2.49)
0.220 (5.58)
REF.
0.060 (1.52)
0.030 (0.76)
0.006 (0.152) TYP.
0.226 (5.74)
0.196 (4.98)
0.114 (2.90)
0.094 (2.39)
Revision: 11-Oct-11
Document Number: 88904
3
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
Legal Disclaimer Notice
www.vishay.com
Vishay
Disclaimer
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“Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other
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Vishay Intertechnology, Inc. hereby certifies that all its products that are identified as RoHS-Compliant fulfill the
definitions and restrictions defined under Directive 2011/65/EU of The European Parliament and of the Council
of June 8, 2011 on the restriction of the use of certain hazardous substances in electrical and electronic equipment
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Please note that some Vishay documentation may still make reference to RoHS Directive 2002/95/EC. We confirm that
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Revision: 12-Mar-12
1
Document Number: 91000