Si2304BDS-T1-GE3 (Lead (Pb)-free and Halogen-free)
ABSOLUTE MAXIMUM RATINGS
(T
A
= 25 °C, unless otherwise noted)
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (T
J
= 150 °C)
a, b
Pulsed Drain Current
Continuous Source Current (Diode Conduction)
a, b
Maximum Power Dissipation
a, b
Operating Junction and Storage Temperature Range
T
A
= 25 °C
T
A
= 70 °C
T
A
= 25 °C
T
A
= 70 °C
Symbol
V
DS
V
GS
I
D
I
DM
I
S
P
D
T
J
, T
stg
0.9
1.08
0.69
- 55 to 150
3.2
2.5
10
0.62
0.75
0.48
W
°C
5s
30
± 20
2.6
2.1
A
Steady State
Unit
V
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambient
a
Maximum Junction-to-Foot (Drain)
Notes:
a. Surface mounted on FR4 board, t
5 s.
b. Pulse width limited by maximum junction temperature.
c. Surface mounted on FR4 board.
t
5s
Steady State
Steady State
Symbol
R
thJA
R
thJF
Typical
90
130
60
Maximum
115
166
75
°C/W
Unit
For SPICE model information via the Worldwide Web: http://www.vishay.com/www/product/spice.htm
Document Number: 72503
S11-1908-Rev. E, 26-Sep-11
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This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
Si2304BDS
Vishay Siliconix
SPECIFICATIONS
(T
A
= 25 °C, unless otherwise noted)
Limits
Parameter
Static
Drain-Source Breakdown Voltage
Gate-Threshold Voltage
Gate-Body Leakage
Zero Gate Voltage Drain Current
On-State Drain
Current
a
V
(BR)DSS
V
GS(th)
I
GSS
I
DSS
I
D(on)
R
DS(on)
g
fs
V
SD
Q
g
Q
gt
Q
gs
Q
gd
R
g
C
iss
C
oss
C
rss
t
d(on)
t
r
t
d(off)
t
f
V
DD
= 15 V, R
L
= 15
I
D
1 A, V
GEN
= 10 V, R
g
= 6
V
DS
= 15 V, V
GS
= 0 V, f = 1 MHz
f = 1 MHz
0.6
V
DS
= 15 V, V
GS
= 10 V, I
D
= 2.5 A
V
GS
= 0 V, I
D
= 250 µA
V
DS
= V
GS
, I
D
= 250 µA
V
DS
= 0 V, V
GS
= ± 20 V
V
DS
= 30 V, V
GS
= 0 V
V
DS
= 30 V, V
GS
= 0 V, T
J
= 55 °C
V
DS
= 30 V, V
GS
= 1 V, T
J
= 25 °C
V
DS
4.5
V, V
GS
= 10 V
V
GS
= 10 V, I
D
= 2.5 A
V
GS
= 4.5 V, I
D
= 2 A
V
DS
= 4.5 V, I
D
= 2.5 A
I
S
= 1.25 A, V
GS
= 0 V
V
DS
= 15 V, V
GS
= 5 V, I
D
= 2.5 A
6
0.055
0.080
6
0.8
2.6
4.6
0.8
1.15
3
225
50
28
7.5
12.5
19
15
12
20
30
25
ns
pF
6
1.2
4
7
nC
0.070
0.105
30
1.5
3
± 100
0.5
10
1
A
S
V
µA
V
nA
Symbol
Test Conditions
Min.
Typ.
Max.
Unit
Drain-Source On-Resistance
a
Forward Transconductance
a
Diode Forward Voltage
Dynamic
Gate Charge
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Gate Resistance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Switching
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Notes:
a. Pulse test: PW
300 µs, duty cycle
2 %.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
TYPICAL CHARACTERISTICS
(25 °C, unless otherwise noted)
10
V
GS
= 10 thru 5 V
8
I
D
- Drain Current (A)
10
8
I
D
- Drain Current (A)
6
6
4
4V
2
3V
0
0
2
4
6
8
V
DS
- Drain-to-Source Voltage (V)
10
4
T
C
= 125 °C
2
25 °C
- 55 °C
0
0
1
2
3
4
5
V
GS
- Gate-to-Source Voltage (V)
Output Characteristics
Transfer Characteristics
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Document Number: 72503
S11-1908-Rev. E, 26-Sep-11
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
Si2304BDS
Vishay Siliconix
TYPICAL CHARACTERISTICS
(25 °C, unless otherwise noted)
0.24
350
300
250
200
150
100
C
oss
50
0
0
2
4
6
I
D
- Drain Current (A)
8
10
0.20
0.16
0.12
R
DS(on)
-
V
GS
= 4.5 V
0.08
V
GS
= 10 V
0.04
C - Capacitance (pF)
C
iss
C
rss
0.00
0
5
10
15
20
25
30
V
DS
- Drain-to-Source Voltage (V)
On-Resistance vs. Drain Current
10
R
DS(on)
- On-Resistance (Normalized)
V
DS
= 15 V
I
D
= 2.5 A
8
Capacitance
1.6
V
GS
= 10 V
I
D
= 2.5 A
1.4
V
GS
- Gate-to-Source Voltage (V)
6
1.2
4
1.0
2
0.8
0
0
1
2
3
4
Q
g
- Total Gate Charge (nC)
5
0.6
- 50
- 25
0
25
50
75
100
125
150
T
J
- Junction Temperature (°C)
Gate Charge
10
0.20
On-Resistance vs. Junction Temperature
T
J
= 150 °C
I
S
- Source Current (A)
1
0.16
I
D
= 2.5 A
0.12
0.1
T
J
= 25 °C
R
DS(on)
-
0.2
0.4
0.6
0.8
1.0
V
SD
- Source-to-Drain Voltage (V)
1.2
0.08
0.01
0.04
0.001
0.0
0.00
0
2
4
6
8
V
GS
- Gate-to-Source Voltage (V)
10
Source-Drain Diode Forward Voltage
On-Resistance vs. Gate-to-Source Voltage
Document Number: 72503
S11-1908-Rev. E, 26-Sep-11
www.vishay.com
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This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see
www.vishay.com/ppg?72503.
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4
Document Number: 72503
S11-1908-Rev. E, 26-Sep-11
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
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