Si9933CDY-T1-GE3 (Lead (Pb)-free and Halogen-free)
8
7
6
5
D
1
D
1
D
2
D
2
G
1
S
1
S
2
G
2
D
1
P-Channel MOSFET
D
2
P-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS
T
A
= 25 °C, unless otherwise noted
Parameter
Drain-Source Voltage
Gate-Source Voltage
T
C
= 25 °C
T
C
= 70 °C
T
A
= 25 °C
T
A
= 70 °C
T
C
= 25 °C
T
A
= 25 °C
L = 0.1 mH
T
C
= 25 °C
T
C
= 70 °C
T
A
= 25 °C
T
A
= 70 °C
Symbol
V
DS
V
GS
Limit
- 20
± 12
- 4
e
- 4
e
- 4
b, c, e
- 3.8
b, c
- 20
- 2.5
- 1.7
b, c
-6
1.8
3.1
2
2
b, c
1.28
b, c
- 50 to 150
Unit
V
Continuous Drain Current (T
J
= 150 °C)
I
D
Pulsed Drain Current (10 µs Pulse Width)
Source-Drain Current Diode Current
Single Pulse Avalanche Current
Single-Pulse Avalanche Energy
I
DM
I
S
I
AS
E
AS
A
mJ
Maximum Power Dissipation
P
D
W
Operating Junction and Storage Temperature Range
T
J
, T
stg
°C
THERMAL RESISTANCE RATINGS
Limit
Parameter
Maximum Junction-to-Ambient
b, d
Maximum Junction-to-Foot (Drain)
Notes:
a. Based on T
C
= 25 °C.
b. Surface Mounted on 1" x 1" FR4 board.
c. t = 10 s.
d. Maximum under Steady State conditions is 110 °C/W.
e. Package Limited.
t
≤
10 s
Steady State
Symbol
R
thJA
R
thJF
Typical
52
32
Maximum
62.5
40
Unit
°C/W
Document Number: 68791
S-81729-Rev. A, 04-Aug-08
www.vishay.com
1
New Product
Si9933CDY
Vishay Siliconix
SPECIFICATIONS
T
J
= 25 °C, unless otherwise noted
Parameter
Static
Drain-Source Breakdown Voltage
V
DS
Temperature Coefficient
V
GS(th)
Temperature Coefficient
Gate Threshold Voltage
Gate-Body Leakage
Zero Gate Voltage Drain Current
On-State Drain Current
b
Drain-Source On-State Resistance
b
Forward Transconductance
b
Dynamic
a
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Gate Resistance
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Drain-Source Body Diode Characteristics
Continuous Source-Drain Diode Current
Pulse Diode Forward Current
a
Body Diode Voltage
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
Reverse Recovery Fall Time
Reverse Recovery Rise Time
I
S
I
SM
V
SD
t
rr
Q
rr
t
a
t
b
I
F
= - 3.8 A, dI/dt = 100 A/µs, T
J
= 25 °C
I
S
= - 3.8 A
- 0.77
30
17
16
14
T
C
= 25 °C
- 2.5
- 20
- 1.2
45
26
A
V
ns
nC
ns
V
DS
ΔV
DS
/T
J
ΔV
GS(th)
/T
J
V
GS(th)
I
GSS
I
DSS
I
D(on)
R
DS(on)
g
fs
C
iss
C
oss
C
rss
Q
g
Q
gs
Q
gd
R
g
t
d(on)
t
r
t
d(off)
t
f
t
d(on)
t
r
t
d(off)
t
f
V
DD
= - 10 V, R
L
= 2.6
Ω
I
D
≅
- 3.8 A, V
GEN
= - 4.5 V, R
g
= 1
Ω
V
DD
= - 10 V, R
L
= 2.6
Ω
I
D
≅
- 3.8 A, V
GEN
= - 10 V, R
g
= 1
Ω
f = 1 MHz
1.2
V
DS
= - 10 V, V
GS
= - 10 V, I
D
= - 4.8 A
V
DS
= - 10 V, V
GS
= - 4.5 V, I
D
= - 4.8 A
V
DS
= - 10 V, V
GS
= 0 V, f = 1 MHz
V
GS
= 0 V, I
D
= - 250 µA
I
D
= - 250 µA
V
DS
= V
GS
, I
D
= - 250 µA
V
DS
= 0 V, V
GS
= ± 12 V
V
DS
= - 20 V, V
GS
= 0 V
V
DS
= - 20 V, V
GS
= 0 V, T
J
= 55 °C
V
DS
= ≤
- 5 V, V
GS
= - 10 V
V
GS
= - 4.5 V, I
D
= - 4.8 A
V
GS
= - 2.5 V, I
D
= - 1 A
V
DS
= - 10 V, I
D
= - 4.8 A
- 20
0.048
0.075
11
665
140
115
17
8
2
3
6
6
15
26
9
21
50
29
13
12
12
23
39
18
32
75
44
20
ns
Ω
26
12
nC
pF
0.058
0.094
- 0.6
- 20
- 19
3.1
- 1.4
- 100
-1
- 10
V
mV/°C
V
nA
µA
A
Ω
S
Symbol
Test Conditions
Min.
Typ.
a
Max.
Unit
Notes:
a. Guaranteed by design, not subject to production testing.
b. Pulse test; pulse width
≤
300 µs, duty cycle
≤
2 %.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
www.vishay.com
2
Document Number: 68791
S-81729-Rev. A, 04-Aug-08
New Product
Si9933CDY
Vishay Siliconix
TYPICAL CHARACTERISTICS
25 °C, unless otherwise noted
20
V
GS
= 5 thru 3.5
V
16
I
D
- Drain Current (A)
I
D
- Drain Current (A)
V
GS
= 3
V
2.5
3.0
2.0
12
V
GS
= 2.5
V
1.5
T
C
= 25 °C
1.0
8
V
GS
= 2
V
4
0.5
V
GS
= 1.5
V
T
C
= 125 °C
T
C
= - 55 °C
0.5
1.0
1.5
2.0
2.5
0
0
1
2
3
4
5
0.0
0.0
V
DS
- Drain-to-Source
Voltage
(V)
V
GS
- Gate-to-Source
Voltage
(V)
Output Characteristics
0.16
1200
Transfer Characteristics
R
DS(on)
- On-Resistance (Ω)
0.12
V
GS
= 2.5
V
0.08
V
GS
= 4.5
V
0.04
C - Capacitance (pF)
900
C
iss
600
300
C
rss
C
oss
0.00
0
5
10
I
D
- Drain Current (A)
15
20
0
0
4
8
12
16
20
V
DS
- Drain-to-Source
Voltage
(V)
On-Resistance vs. Drain Current and Gate Voltage
10
I
D
= 4.8 A
V
GS
- Gate-to-Source
Voltage
(V)
8
V
DS
= 10
V
6
V
DS
= 16
V
4
R
DS(on)
- On-Resistance
(Normalized)
1.6
1.5
1.4
1.3
1.2
1.1
1.0
0.9
0.8
0
0
3
6
9
12
15
18
0.7
- 50
I
D
= 20 A
Capacitance
V
GS
= - 4.5
V;
I
D
= - 4.8 A
V
GS
= - 2.5
V;
I
D
= - 3.8 A
2
- 25
0
25
50
75
100
125
150
Q
g
- Total Gate Charge (nC)
T
J
- Junction Temperature (°C)
Gate Charge
On-Resistance vs. Junction Temperature
Document Number: 68791
S-81729-Rev. A, 04-Aug-08
www.vishay.com
3
New Product
Si9933CDY
Vishay Siliconix
TYPICAL CHARACTERISTICS
25 °C, unless otherwise noted
100
0.08
I
D
= - 4.8 A
R
DS(on)
- On-Resistance (Ω)
0.06
T
J
= 125 °C
I
S
- Source Current (A)
10
0.04
T
J
= 25 °C
0.02
T
J
= 150 °C
1
T
J
= 25 °C
0.1
0.0
0.2
0.4
0.6
0.8
1.0
1.2
0
0
2
4
6
8
10
12
V
SD
- Source-to-Drain
Voltage
(V)
V
GS
- Gate-to-Source
Voltage
(V)
Source-Drain Diode Forward Voltage
1.3
1.2
40
1.1
V
GS(th)
(V)
Power (W)
1.0
I
D
= 250
µA
0.9
0.8
10
0.7
0.6
- 50
30
50
On-Resistance vs. Gate-to-Source Voltage
20
- 25
0
25
50
75
100
125
150
0
0.001
0.01
0.1
Time (s)
1
10
T
J
- Temperature (°C)
Threshold Voltage
100
Limited
by
R
DS(on)
*
10
I
D
- Drain Current (A)
1 ms
Single Pulse Power, Junction-to-Ambient
1
10 ms
100 ms
0.1
T
A
= 25 °C
Single Pulse
BVDSS Limited
0.01
0.1
1s
10 s
DC
1
10
100
V
DS
- Drain-to-Source
Voltage
(V)
*
V
GS
> minimum
V
GS
at
which
R
DS(on)
is specified
Safe Operating Area, Junction-to-Ambient
www.vishay.com
4
Document Number: 68791
S-81729-Rev. A, 04-Aug-08
New Product
Si9933CDY
Vishay Siliconix
TYPICAL CHARACTERISTICS
25 °C, unless otherwise noted
8
6
I
D
- Drain Current (A)
Package Limited
4
2
0
0
25
50
75
100
125
150
T
C
- Case Temperature (°C)
Current Derating*
4.0
1.5
3.2
1.2
Power (W)
2.4
Power (W)
0
25
50
75
100
125
150
0.9
1.6
0.6
0.8
0.3
0.0
0.0
0
25
50
75
100
125
150
T
C
- Case Temperature (°C)
T
A
- Ambient Temperature (°C)
Power Derating, Junction-to-Foot
Power Derating, Junction-to-Ambient
* The power dissipation P
D
is based on T
J(max)
= 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper
dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package
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