c. Maximum under steady state conditions is 81 °C/W.
d. Package limited.
e. See solder profile (www.vishay.com/doc?73257). The PowerPAK 1212-8 is a leadless package. The end of the lead terminal is exposed cop-
per (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is
not required to ensure adequate bottom side solder interconnection.
f. Rework conditions: manual soldering with a soldering iron is not recommended for leadless components.
Document Number: 63262
S13-0632-Rev. A, 25-Mar-13
For technical questions, contact:
pmostechsupport@vishay.com
www.vishay.com
1
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
SiS413DN
Vishay Siliconix
SPECIFICATIONS
(T
J
= 25 °C, unless otherwise noted)
Parameter
Static
Drain-Source Breakdown Voltage
V
DS
Temperature Coefficient
V
GS(th)
Temperature Coefficient
Gate-Source Threshold Voltage
Gate-Source Leakage
Zero Gate Voltage Drain Current
On-State Drain Current
a
Drain-Source On-State Resistance
a
Forward Transconductance
a
Dynamic
b
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Gate Resistance
Turn-On Delay Time
Rise Time
Turn-Off DelayTime
Fall Time
Turn-On Delay Time
Rise Time
Turn-Off DelayTime
Fall Time
Drain-Source Body Diode Characteristics
Continous Source-Drain Diode Current
Pulse Diode Forward Current
Body Diode Voltage
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
Reverse Recovery Fall Time
Reverse Recovery Rise Time
I
S
I
SM
V
SD
t
rr
Q
rr
t
a
t
b
I
F
= - 10 A, dI/dt = 100 A/µs, T
J
= 25 °C
I
S
= - 3 A, V
GS
= 0 V
- 0.74
18
8
7
11
T
C
= 25 °C
- 18
- 70
- 1.2
36
16
A
V
ns
nC
ns
V
DS
V
DS
/T
J
V
GS(th)
/T
J
V
GS(th)
I
GSS
I
DSS
I
D(on)
R
DS(on)
g
fs
C
iss
C
oss
C
rss
Q
g
Q
gs
Q
gd
R
g
t
d(on)
t
r
t
d(off)
t
f
t
d(on)
t
r
t
d(off)
t
f
V
DD
= - 15 V, R
L
= 1.5
I
D
- 10 A, V
GEN
= - 4.5 V, R
g
= 1
V
DD
= - 15 V, R
L
= 1.5
I
D
- 10 A, V
GEN
= - 10 V, R
g
= 1
f = 1 MHz
0.4
V
DS
= - 15 V, V
GS
= - 10 V, I
D
= - 10 A
V
DS
= - 15 V, V
GS
= - 4.5 V, I
D
= - 10 A
V
DS
= - 15 V, V
GS
= 0 V, f = 1 MHz
V
GS
= 0 V, I
D
= - 250 µA
I
D
= - 250 µA
V
DS
= V
GS
, I
D
= - 250 µA
V
DS
= 0 V, V
GS
= ± 20 V
V
DS
= - 30 V, V
GS
= 0 V
V
DS
= - 30 V, V
GS
= 0 V, T
J
= 55 °C
V
DS
- 10 V, V
GS
= - 10 V
V
GS
= - 10 V, I
D
= - 15 A
V
GS
= - 4.5 V, I
D
= - 10 A
V
DS
= - 10 V, I
D
= - 15 A
- 30
0.0076
0.0108
50
4280
427
382
73
35.4
10.6
11.6
1.6
11
11
45
8
55
82
40
13
3.2
22
22
90
16
100
150
80
26
ns
110
53
nC
pF
0.0094
0.0132
-1
- 30
- 23
4.6
- 2.5
± 100
-1
-5
V
mV/°C
V
nA
µA
A
S
Symbol
Test Conditions
Min.
Typ.
Max.
Unit
Notes:
a. Pulse test; pulse width
300 µs, duty cycle
2 %.
b. Guaranteed by design, not subject to production testing.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
www.vishay.com
2
For technical questions, contact:
pmostechsupport@vishay.com
Document Number: 63262
S13-0632-Rev. A, 25-Mar-13
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
SiS413DN
Vishay Siliconix
TYPICAL CHARACTERISTICS
(25 °C, unless otherwise noted)
100
V
GS
= 10 V thru 4 V
80
I
D
- Drain Current (A)
I
D
- Drain Current (A)
64
80
60
48
40
V
GS
= 3 V
20
V
GS
= 2 V
0.0
0.5
1.0
1.5
2.0
2.5
32
T
C
= 25
°C
16
T
C
= 125
°C
T
C
= - 55
°C
0.0
1.0
2.0
3.0
4.0
5.0
0
0
V
DS
- Drain-to-Source Voltage (V)
V
GS
- Gate-to-Source Voltage (V)
Output Characteristics
0.0200
6000
C
iss
0.0160
R
DS(on)
- On-Resistance (Ω)
C - Capacitance (pF)
Transfer Characteristics
4800
0.0120
V
GS
= 4.5 V
3600
0.0080
2400
0.0040
V
GS
= 10 V
1200
C
rss
C
oss
0.0000
0
16
32
48
64
80
0
0
4
8
12
16
20
V
DS
- Drain-to-Source Voltage (V)
I
D
- Drain Current (A)
On-Resistance vs. Drain Current
Capacitance
10
R
DS(on)
- On-Resistance (Normalized)
1.8
I
D
= 10 A
V
GS
- Gate-to-Source Voltage (V)
8
V
DS
= 10 V
I
D
= 10 A
1.6
V
GS
= 10 V
1.4
6
V
DS
= 15 V
4
V
DS
= 20 V
1.2
V
GS
= 4.5 V
1.0
2
0.8
0
0
15
30
45
60
75
Q
g
- Total Gate Charge (nC)
0.6
- 50
- 25
0
25
50
75
100
125
150
T
J
- Junction Temperature (°C)
Gate Charge
On-Resistance vs. Junction Temperature
Document Number: 63262
S13-0632-Rev. A, 25-Mar-13
For technical questions, contact:
pmostechsupport@vishay.com
www.vishay.com
3
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
SiS413DN
Vishay Siliconix
TYPICAL CHARACTERISTICS
(25 °C, unless otherwise noted)
100
0.050
10
I
S
- Source Current (A)
1
T
J
= 25 °C
R
DS(on)
- On-Resistance (Ω)
T
J
= 150
°C
0.040
I
D
= 15 A
0.030
0.1
0.020
T
J
= 125
°C
0.010
T
J
= 25
°C
0.01
0.001
0.0
0.2
0.4
0.6
0.8
1.0
1.2
0.000
0
2
4
6
8
10
V
GS
- Gate-to-Source Voltage (V)
V
SD
- Source-to-Drain Voltage (V)
Source-Drain Diode Forward Voltage
1.0
On-Resistance vs. Gate-to-Source Voltage
100
0.7
I
D
= 250 μA
V
GS(th)
Variance (V)
80
Power (W)
0.4
60
0.1
I
D
= 1 mA
40
- 0.2
20
- 0.5
- 50
- 25
0
25
50
75
100
125
150
0
0.001
0.01
0.1
Time (s)
1
10
T
J
- Temperature (°C)
Threshold Voltage
100
I
DM
Limited
Single Pulse Power, Junction-to-Ambient
100 μs
10
I
D
- Drain Current (A)
I
D
Limited
1 ms
10 ms
1
Limited by R
DS(on)
*
100 ms
1s
0.1
T
A
= 25
°C
Single Pulse
0.01
0.01
10 s
DC
BVDSS Limited
0.1
1
10
100
V
DS
- Drain-to-Source Voltage (V)
* V
GS
> minimum V
GS
at which R
DS(on)
is specified
Safe Operating Area
www.vishay.com
4
For technical questions, contact:
pmostechsupport@vishay.com
Document Number: 63262
S13-0632-Rev. A, 25-Mar-13
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
SiS413DN
Vishay Siliconix
MOSFET TYPICAL CHARACTERISTICS
(25 °C, unless otherwise noted)
70
56
I
D
- Drain Current (A)
42
28
Limited by Package
14
0
0
25
50
75
100
125
150
T
C
- Case Temperature (°C)
Current Derating*
65
2.0
52
1.6
Power (W)
26
Power (W)
39
1.2
0.8
13
0.4
0
0
25
50
75
100
125
150
0.0
0
25
50
75
100
125
150
T
C
- Case Temperature (°C)
T
A
- Ambient Temperature (°C)
Power, Junction-to-Case
Power, Junction-to-Ambient
* The power dissipation P
D
is based on T
J(max.)
= 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper
dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package
limit.
Document Number: 63262
S13-0632-Rev. A, 25-Mar-13
For technical questions, contact:
pmostechsupport@vishay.com
www.vishay.com
5
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
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