VS-ETX3007T-N3
www.vishay.com
Vishay Semiconductors
Hyperfast Rectifier, 30 A FRED Pt
®
FEATURES
2
Base cathode
2
• Hyper fast and soft recovery time
• Low forward voltage drop
• 175 °C maximum operating junction temperature
• Low leakage current
1
3
1
Cathode
3
Anode
• True 2 pin package
• Material categorization:
for definitions of compliance
www.vishay.com/doc?99912
please
see
2L TO-220AC
PRIMARY CHARACTERISTICS
I
F(AV)
V
R
V
F
at I
F
at 125 °C
t
rr
T
J
max.
Package
Circuit configuration
30 A
650 V
1.6 V
27 ns
175 °C
2 L TO-220AC
Single
DESCRIPTION / APPLICATIONS
Ultra low V
F
, soft-switching hyper fast rectifiers optimized
for discontinuous (critical) mode (DCM) power factor
correction (PFC).
The minimized conduction loss, optimized stored charge
and low recovery current minimized the switching losses
and reduce over dissipation in the switching element and
snubbers.
The device is also intended for use as a freewheeling diode
in power supplies and other power switching applications.
ABSOLUTE MAXIMUM RATINGS
PARAMETER
Repetitive peak reverse voltage
Average rectified forward current
Non-repetitive peak surge current
Operating junction and storage temperature
SYMBOL
V
RRM
I
F(AV)
I
FSM
T
J
, T
Stg
T
C
= 120 °C
T
C
= 25 °C
TEST CONDITIONS
VALUES
650
30
210
-55 to +175
UNITS
V
A
°C
ELECTRICAL SPECIFICATIONS
(T
J
= 25 °C unless otherwise specified)
PARAMETER
Breakdown voltage, blocking voltage
Forward voltage
SYMBOL
V
BR
,
V
R
V
F
I
R
C
T
L
S
I
R
= 250 μA
I
F
= 30 A
I
F
= 30 A, T
J
= 125 °C
V
R
= V
R
rated
T
J
= 150 °C, V
R
= V
R
rated
V
R
= 200 V
Measured lead to lead 5 mm from package body
TEST CONDITIONS
MIN.
650
-
-
-
-
-
-
TYP.
-
2.1
1.6
0.02
50
22
8.0
MAX.
-
2.5
1.7
30
300
-
-
μA
pF
nH
V
UNITS
Reverse leakage current
Junction capacitance
Series inductance
Revision: 04-Oct-17
Document Number: 96065
1
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
VS-ETX3007T-N3
www.vishay.com
Vishay Semiconductors
DYNAMIC RECOVERY CHARACTERISTICS
(T
J
= 25 °C unless otherwise specified)
PARAMETER
SYMBOL
T
J
= 25 °C
Reverse recovery time
t
rr
T
J
= 25 °C
T
J
= 125 °C
Peak recovery current
I
RRM
Q
rr
T
J
= 25 °C
T
J
= 125 °C
T
J
= 25 °C
T
J
= 125 °C
I
F
= 30 A
dI
F
/dt = 1000 A/μs
V
R
= 400 V
TEST CONDITIONS
I
F
= 1 A
dI
F
/dt = 100 A/μs
V
R
= 30 V
MIN.
-
-
-
-
-
-
-
TYP.
35
27
88
15
24
330
1350
MAX.
-
ns
-
-
-
-
-
-
A
UNITS
Reverse recovery charge
nC
THERMAL - MECHANICAL SPECIFICATIONS
PARAMETER
Thermal resistance, junction to case
Thermal resistance, junction to ambient
Thermal resistance, case to heat sink
Weight
Mounting torque
Maximum junction and storage
temperature range
Marking device
T
J
, T
Stg
Case style: 2L TO-220AC
SYMBOL
R
thJC
R
thJA
R
thCS
Typical socket mount
Mounting surface, flat, smooth, and greased
TEST CONDITIONS
MIN.
-
-
-
-
-
6.0
(5.0)
-55
TYP.
1.0
-
-
0.2
0.07
-
-
MAX.
1.3
70
0.5
-
-
12
(10)
175
g
oz.
kgf · cm
(lbf · in)
°C
°C/W
UNITS
ETX3007T
I
F
- Instantaneous Forward Current (A)
100
1000
175 °C
100
10
T
J
= 175 °C
10
150 °C
I
RM
(μA)
1
0.1
0.01
0.001
1
25 °C
T
J
= 150°C
T
J
= 25 °C
0.1
0
0.5
1.0
1.5
2.0
2.5
3.0
0
100
200
300
400
500
600
700
V
F
- Forward Voltage Drop (V)
Fig. 1 - Typical Forward Voltage Drop Characteristics
V
R
(V)
Fig. 2 - Typical Values of Reverse Current vs. Reverse Voltage
Revision: 04-Oct-17
Document Number: 96065
2
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
VS-ETX3007T-N3
www.vishay.com
Vishay Semiconductors
1000
C
T
- Junction Capacitance (pF)
100
10
0
100
200
300
400
500
600
700
V
R
- Reverse Voltage (V)
Fig. 3 - Typical Junction Capacitance vs. Reverse Voltage
10
Z
thJC
- Thermal Impedance
Junction to Case (°C/W)
1
0.1
0.01
0.00001
0.50
0.20
0.10
0.05
0.02
0.01
DC
0.0001
0.001
0.01
0.1
1
t
1
- Rectangular Pulse Duration (s)
Fig. 4 - Maximum Thermal Impedance Z
thJC
Characteristics
180
80
70
RMS limit
Allowable Case Temperature (°C)
170
Average Power Loss (W)
160
150
140
130
120
110
100
90
80
70
0
10
20
30
40
50
Square
wave (D = 0.50)
rated V
R
applied
DC
60
50
40
30
20
10
0
0
10
20
30
40
50
D = 0.01
D = 0.05
D = 0.10
D = 0.20
D = 0.50
DC
I
F(AV)
- Average Forward Current (A)
Fig. 5 - Maximum Allowable Case Temperature vs.
Average Forward Current
I
F(AV)
- Average Forward Current (A)
Fig. 6 - Forward Power Loss Characteristics
Revision: 04-Oct-17
Document Number: 96065
3
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
VS-ETX3007T-N3
www.vishay.com
Vishay Semiconductors
1400
1200
125 °C
1000
125 °C
130
120
110
100
90
80
70
60
50
40
30
20
100
1000
25 °C
Q
rr
(nC)
t
rr
(ns)
800
600
400
200
0
100
1000
25 °C
dI
F
/dt (A/μs)
Fig. 7 - Typical Reverse Recovery Time vs. dI
F
/dt
dI
F
/dt (A/μs)
Fig. 8 - Typical Reverse Recovery Time vs. dI
F
/dt
(3)
I
F
0
t
rr
t
a
t
b
Q
rr
(2)
(4)
I
RRM
0.5 I
RRM
di
(rec)M
/dt
(5)
0.75 I
RRM
(1)
di
F
/dt
(1) di
F
/dt - rate of change of current
through zero crossing
(2) I
RRM
- peak reverse recovery current
(3) t
rr
- reverse recovery time measured
from zero crossing point of negative
going I
F
to point where a line passing
through 0.75 I
RRM
and 0.50 I
RRM
extrapolated to zero current.
(4)
Q
rr
- area under curve defined by t
rr
and I
RRM
Q
rr
=
t
rr
x I
RRM
2
(5) di
(rec)M
/dt - peak rate of change of
current during t
b
portion of t
rr
Fig. 9 - Reverse Recovery Waveform and Definitions
Revision: 04-Oct-17
Document Number: 96065
4
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
VS-ETX3007T-N3
www.vishay.com
ORDERING INFORMATION TABLE
Vishay Semiconductors
Device code
VS-
1
1
2
3
4
5
6
7
8
E
2
-
-
-
T
3
X
4
30
5
07
6
T
7
-N3
8
Vishay Semiconductors product
E = single diode
Package:
T = TO-220AC
-
-
-
-
-
X = hyper fast recovery
Current rating (30 = 30 A)
Voltage rating (07 = 650 V)
T = True 2 pin TO-220
Environmental digit:
-N3 = halogen-free, RoHS-compliant, and totally lead (Pb)-free
ORDERING INFORMATION
(Example)
PREFERRED P/N
VS-ETX3007T-N3
QUANTITY PER TUBE
50
MINIMUM ORDER QUANTITY
1000
PACKAGING DESCRIPTION
Antistatic plastic tube
LINKS TO RELATED DOCUMENTS
Dimensions
Part marking information
TO-220AC 2L
TO-220AC 2L
www.vishay.com/doc?96069
www.vishay.com/doc?95391
Revision: 04-Oct-17
Document Number: 96065
5
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
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