VS-E4PH3006L-N3
www.vishay.com
Vishay Semiconductors
Hyperfast Soft Recovery Diode,
30 A FRED Pt
®
Gen 4
FEATURES
Base cathode
2
2
1
1
Cathode
3
Anode
• Gen 4 FRED Pt
®
technology
• Low I
RRM
and reverse recovery charge
• Very low forward voltage drop
• Polymide passivated chip for high reliability
standard
3
TO-247AD 2L
• 175 °C operating junction temperature
• Material categorization:
for definitions of compliance please see
www.vishay.com/doc?99912
PRODUCT SUMMARY
I
F(AV)
V
R
V
F
at I
F
t
rr
typ.
T
J
max.
Package
Diode variation
30 A
600 V
1.37 V
see Recovery table
175 °C
TO-247AD 2L
Single die
DESCRIPTION
Gen 4 Fred technology, state of the art, ultrafast V
F
, soft
switching optimized for Discontinuous (Critical) Mode (DCM)
and IGBT F/W diode.
The minimized conduction loss, optimized stored charge
and low recovery current minimized the switching losses
and reduce over dissipation in the switching element and
snubbers.
ABSOLUTE MAXIMUM RATINGS
PARAMETER
Cathode to anode voltage
Average rectified current
Single pulse forward current
Operating junction and storage temperatures
SYMBOL
V
R
I
F(AV)
I
FSM
T
J
, T
Stg
T
C
= 122 °C
T
C
= 25 °C, t
p
= 8.3 ms half sine wave
TEST CONDITIONS
MAX.
600
30
240
-55 to +175
UNITS
V
A
°C
ELECTRICAL SPECIFICATIONS
(T
J
= 25 °C unless otherwise specified)
PARAMETER
Breakdown voltage, blocking voltage
SYMBOL
V
BR
, V
R
TEST CONDITIONS
I
R
= 100 μA
I
F
= 30 A
I
F
= 60 A
Forward voltage
V
F
I
F
= 30 A, T
J
= 125 °C
I
F
= 60 A, T
J
= 125 °C
I
F
= 30 A, T
J
= 150 °C
I
F
= 60 A, T
J
= 150 °C
Reverse leakage current
Junction capacitance
I
R
C
T
V
R
= V
R
rated
T
J
= 150 °C, V
R
= V
R
rated
V
R
= 600 V
MIN.
600
-
-
-
-
-
-
-
-
-
TYP.
-
1.65
1.95
1.44
1.78
1.37
1.68
-
-
18.3
MAX.
-
2
-
-
-
1.6
-
50
500
-
μA
pF
V
UNITS
Revision: 19-Jan-17
Document Number: 95897
1
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
VS-E4PH3006L-N3
www.vishay.com
Vishay Semiconductors
DYNAMIC RECOVERY CHARACTERISTICS
(T
J
= 25 °C unless otherwise specified)
PARAMETER
Reverse recovery time
Peak recovery current
Reverse recovery charge
SYMBOL
t
rr
I
RRM
Q
rr
T
J
= 25 °C
T
J
= 125 °C
T
J
= 25 °C
T
J
= 125 °C
T
J
= 25 °C
T
J
= 125 °C
I
F
= 30 A
dI
F
/dt = 1000 A/μs
V
R
= 400 V
TEST CONDITIONS
MIN.
-
-
-
-
-
-
TYP.
55
75
13
23
500
1250
MAX.
-
-
-
-
-
-
UNITS
ns
A
nC
THERMAL - MECHANICAL SPECIFICATIONS
PARAMETER
Thermal resistance, junction to case
Thermal resistance, case to heat sink
Weight
Mounting torque
Marking device
Case style TO-247AD 2L
SYMBOL
R
thJC
R
thCS
Mounting surface, flat, smooth and greased
TEST CONDITIONS
MIN.
-
-
-
-
6.0
(5)
TYP.
-
0.4
6.0
0.21
-
MAX.
1
-
-
-
12
(20)
g
oz.
kgf · cm
(lbf · in)
UNITS
°C/W
E4PH3006L
I
F
- Instantaneous Forward Current (A)
1000
1000
175 °C
I
R
- Reverse Current (μA)
100
10
1
150 °C
125 °C
100
T
J
= 175 °C
10
T
J
= 150 °C
T
J
= 125 °C
T
J
= 25 °C
1
0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
25 °C
0.1
0.01
0.001
0
200
400
600
V
F
- Forward Voltage Drop (V)
Fig. 1 - Typical Forward Voltage Drop Characteristics
100
V
R
- Reverse Voltage (V)
Fig. 2 - Typical Values of Reverse Current vs. Reverse Voltage
C
T
- Junction Capacitance (pF)
10
0
100
200
300
400
500
600
V
R
- Reverse Voltage (V)
Fig. 3 - Typical Junction Capacitance vs. Reverse Voltage
Revision: 19-Jan-17
Document Number: 95897
2
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
VS-E4PH3006L-N3
www.vishay.com
Vishay Semiconductors
10
Z
thJC
- Thermal Impedance
Junction to Case (°C/W)
1
0.50
0.20
0.10
0.05
0.02
0.01
0.1
single
pulse
0.01
0.001
0.01
0.1
1
10
t
1
- Rectangular Pulse Duration (s)
Fig. 4 - Max. Thermal Impedance Z
thJC
Characteristics
180
110
100
90
Tj = 125 °C
Allowable Case Temperature (°C)
160
140
DC
t
rr
(ns)
80
70
25°C
120
Square
wave (D = 0.50)
80 % rated V
R
applied
See
note
(1)
80
0
10
20
30
40
50
100
60
50
400
500
600
700
800
900
1000
I
F(AV)
- Average Forward Current (A)
Fig. 5 - Maximum Allowable Case Temperature vs.
Average Forward Current
180
160
dI
F
/dt (A/μs)
Fig. 7 - Typical Reverse Recovery Time vs. dI
F
/dt
1400
RMS limit
1200
1000
125 °C
Average Power Loss (W)
140
120
100
80
60
40
20
0
0
10
20
30
40
50
60
70
80
90
200
400
500
600
700
800
900
1000
D = 0.01
D = 0.05
D = 0.10
D = 0.20
D = 0.50
Q
rr
(nC)
800
600
400
25 °C
I
F(AV)
- Average Forward Current (A)
Fig. 6 - Forward Power Loss Characteristics
(1)
dI
F
/dt (A/μs)
Fig. 8 - Typical Stored Charge vs. dI
F
/dt
Note
Formula used: T
C
= T
J
- (Pd + Pd
REV
) x R
thJC
;
Pd = Forward power loss = I
F(AV)
x V
FM
at (I
F(AV)
/D) (see fig. 5);
Pd
REV
= Inverse power loss = V
R1
x I
R
(1 - D); I
R
at V
R1
= rated V
R
Revision: 19-Jan-17
Document Number: 95897
3
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
VS-E4PH3006L-N3
www.vishay.com
Vishay Semiconductors
30
25
20
125°C
I
rec
(A)
15
10
5
0
400
500
600
Tj = 25 °C
700
800
900
1000
dI
F
/dt (A/μs)
Fig. 9 - Typical Reverse Current vs. dI
F
/dt
ORDERING INFORMATION TABLE
Device code
VS-
1
1
2
3
4
5
6
-
-
E
2
4
3
P
4
H
5
30
6
06
7
L
8
-N3
9
Vishay Semiconductors product
Circuit configuration:
E = single diode, 2 pins
-
-
-
-
FRED Pt Gen 4
P = TO-247 package
Process type:
H = hyperfast recovery
Current rating (30 = 30 A)
7
8
9
-
-
-
Voltage rating (06 = 600 V)
L = long lead
Environmental digit:
-N3 = halogen-free, RoHS-compliant, and totally lead (Pb)-free
ORDERING INFORMATION
(Example)
PREFERRED P/N
VS-E4PH3006L-N3
QUANTITY PER TUBE
25
MINIMUM ORDER QUANTITY
500
PACKAGING DESCRIPTION
Antistatic plastic tube
LINKS TO RELATED DOCUMENTS
Dimensions
Part marking information
TO-247AD 2L
TO-247AD 2L
www.vishay.com/doc?95536
www.vishay.com/doc?95648
Revision: 19-Jan-17
Document Number: 95897
4
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
Outline Dimensions
www.vishay.com
Vishay Semiconductors
TO-247AD 2L
DIMENSIONS
in millimeters and inches
(3)
B
(2) R/2
Q
2xR
(2)
1, 2
(5) L1
C
L
See
view B
A
(4)
E1
0.01
M
D B
M
View A - A
2 x b2
2xb
0.10
M
C A
M
(b1, b3)
C
2x e
A1
3
E
S
A2
A
D2
A
(6) F P
Ø K
M
D B
M
A
(Datum B)
F P1
D
D
Thermal pad
4
D1 (4)
Plating
Base metal
D D
(c)
c1
(b, b2)
(4)
Section
C - C, D - D
C
C
View B
SYMBOL
A
A1
A2
b
b1
b2
b3
c
c1
D
D1
D2
MILLIMETERS
MIN.
4.65
2.21
1.50
0.99
0.99
1.65
1.65
0.38
0.38
19.71
13.08
0.51
MAX.
5.31
2.59
2.49
1.40
1.35
2.39
2.34
0.89
0.84
20.70
-
1.35
INCHES
MIN.
0.183
0.087
0.059
0.039
0.039
0.065
0.065
0.015
0.015
0.776
0.515
0.020
MAX.
0.209
0.102
0.098
0.055
0.053
0.094
0.092
0.035
0.033
0.815
-
0.053
NOTES
SYMBOL
E
E1
e
ØK
L
L1
ØP
Ø P1
Q
MILLIMETERS
MIN.
15.29
13.46
5.46 BSC
0.254
19.81
3.71
3.56
-
5.31
4.52
20.32
4.29
3.66
6.98
5.69
5.49
MAX.
15.87
-
INCHES
MIN.
0.602
0.53
0.010
0.780
0.146
0.14
-
0.209
0.178
0.800
0.169
0.144
0.275
0.224
0.216
MAX.
0.625
-
NOTES
3
0.215 BSC
3
4
R
S
5.51 BSC
0.217 BSC
Notes
(1)
Dimensioning and tolerancing per ASME Y14.5M-1994
(2)
Contour of slot optional
(3)
Dimension D and E do not include mold flash. Mold flash shall not exceed 0.127 mm (0.005") per side. These dimensions are measured at
the outermost extremes of the plastic body
(4)
Thermal pad contour optional with dimensions D1 and E1
(5)
Lead finish uncontrolled in L1
(6)
Ø P to have a maximum draft angle of 1.5 to the top of the part with a maximum hole diameter of 3.91 mm (0.154")
(7)
Outline conforms to JEDEC
®
outline TO-247 with exception of dimension Q
Revision: 20-Apr-17
Document Number: 95536
1
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
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