d. Maximum under steady state conditions is 175 °C/W.
Document Number: 62827
S13-0111-Rev. A, 21-Jan-13
Symbol
R
thJA
R
thJF
Typical
100
60
Maximum
130
75
Unit
°C/W
For technical questions, contact:
pmostechsupport@vishay.com
www.vishay.com
1
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
Si2347DS
Vishay Siliconix
MOSFET SPECIFICATIONS
(T
J
= 25 °C, unless otherwise noted)
Parameter
Static
Drain-Source Breakdown Voltage
V
DS
Temperature Coefficient
V
GS(th)
Temperature Coefficient
Gate-Source Threshold Voltage
Gate-Source Leakage
Zero Gate Voltage Drain Current
On-State Drain Current
a
Drain-Source On-State Resistance
a
Forward Transconductance
a
Dynamic
b
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Gate Resistance
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Drain-Source Body Diode Characteristics
Continuous Source-Drain Diode Current
Pulse Diode Forward Current
a
Body Diode Voltage
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
Reverse Recovery Fall Time
Reverse Recovery Rise Time
I
S
I
SM
V
SD
t
rr
Q
rr
t
a
t
b
I
F
= - 3 A, dI/dt = 100 A/µs, T
J
= 25 °C
I
S
= - 3 A
- 0.8
13
5
7
6
T
C
= 25 °C
- 1.4
- 20
- 1.2
20
10
A
V
ns
nC
ns
C
iss
C
oss
C
rss
Q
g
Q
gs
Q
gd
R
g
t
d(on)
t
r
t
d(off)
t
f
t
d(on)
t
r
t
d(off)
t
f
V
DD
= - 15 V, R
L
= 5
I
D
= - 3 A, V
GEN
= - 6 V, R
G
= 1
V
DD
= - 15 V, R
L
= 5
I
D
= - 3 A, V
GEN
= - 10 V, R
G
= 1
f = 1 MHz
1.7
V
DS
= - 15 V, V
GS
= - 10 V, I
D
= - 5 A
V
DS
= - 15 V, V
GS
= - 4.5 V, I
D
= - 5 A
V
DS
= - 15 V, V
GS
= 0 V, f = 1 MHz
705
93
73
14.5
6.9
2.3
2.1
8.3
6
6
19
9
10
9
18
7
17
12
12
29
18
20
18
27
14
ns
ns
22
10.4
nC
pF
V
DS
V
DS
/T
J
V
GS(th)
/T
J
V
GS(th)
I
GSS
I
DSS
I
D(on)
R
DS(on)
g
fs
V
GS
= 0 V, I
D
= - 250 µA
I
D
= - 250 µA
V
DS
= V
GS
, I
D
= - 250 µA
V
DS
= 0 V, V
GS
= ± 20 V
V
DS
= - 30 V, V
GS
= 0 V
V
DS
= - 30 V, V
GS
= 0 V, T
J
= 55 °C
V
DS
-
5 V, V
GS
= - 10 V
V
GS
= - 10 V, I
D
= - 3.8 A
V
GS
= - 6 V, I
D
= - 3.3 A
V
GS
= - 4.5 V, I
D
= - 3 A
V
DS
= - 5 V, I
D
= - 3.8 A
- 20
0.033
0.041
0.050
10
0.042
0.054
0.068
S
-1
- 30
- 25
3.9
- 2.5
± 100
-1
- 10
V
mV/°C
V
nA
µA
A
Symbol
Test Conditions
Min.
Typ.
Max.
Unit
Notes:
a. Pulse test; pulse width
300 µs, duty cycle
2 %.
b. Guaranteed by design, not subject to production testing.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
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For technical questions, contact:
pmostechsupport@vishay.com
Document Number: 62827
S13-0111-Rev. A, 21-Jan-13
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
Si2347DS
Vishay Siliconix
TYPICAL CHARACTERISTICS
(25 °C, unless otherwise noted)
20
V
GS
= 10 V thru 5 V
V
GS
= 4.5 V
0.8
1
I
D
- Drain Current (A)
15
V
GS
= 4 V
I
D
- Drain Current (A)
0.6
T
C
= 25
°C
10
0.4
5
V
GS
= 3 V
0.2
T
C
= 125
°C
T
C
= - 55
°C
0
0
0.5
1
1.5
2
V
DS
- Drain-to-Source Voltage (V)
0
0
0.6
1.2
1.8
2.4
3
V
GS
- Gate-to-Source Voltage (V)
Output Characteristics
Transfer Characteristics
0.10
950
R
DS(on)
- On-Resistance (Ω)
0.08
C - Capacitance (pF)
760
C
iss
0.06
V
GS
= 4.5 V
V
GS
= 6 V
570
0.04
V
GS
= 10 V
0.02
380
190
C
oss
C
rss
0.00
0
5
10
I
D
- Drain Current (A)
15
20
0
0
6
12
18
24
30
V
DS
- Drain-to-Source Voltage (V)
On-Resistance vs. Drain Current and Gate Voltage
10
I
D
= 3.8 A
V
GS
- Gate-to-Source Voltage (V)
1.5
Capacitance
V
GS
= 10 V, 3.8 A; 6 V, 3.3 A
V
DS
= 8 V
R
DS(on)
- On-Resistance (Normalized)
1.3
8
6
V
DS
= 15 V
V
GS
= 4.5V, 3A
1.1
4
V
DS
= 24 V
0.9
2
0
0
3
6
9
12
15
0.7
- 50
- 25
0
25
50
75
100
125
150
Q
g
- Total Gate Charge (nC)
T
J
- Junction Temperature (°C)
Gate Charge
On-Resistance vs. Junction Temperature
Document Number: 62827
S13-0111-Rev. A, 21-Jan-13
For technical questions, contact:
pmostechsupport@vishay.com
www.vishay.com
3
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
Si2347DS
Vishay Siliconix
TYPICAL CHARACTERISTICS
(25 °C, unless otherwise noted)
100.0
0.125
I
D
= 3.8 A
0.1
I
S
- Source Current (A)
10.0
T
J
= 150
°C
R
DS(on)
- On-Resistance (Ω)
0.075
T
J
= 125
°C
0.05
T
J
= 25
°C
0.025
1.0
T
J
= 25
°C
0.1
0.0
0.2
0.4
0.6
0.8
1.0
1.2
V
SD
- Source-to-Drain Voltage (V)
0
2
4
6
8
10
V
GS
- Gate-to-Source Voltage (V)
Source-Drain Diode Forward Voltage
On-Resistance vs. Gate-to-Source Voltage
2
30
1.82
20
I
D
= 250 μA
1.46
Power (W)
10
0
0.001
V
GS(th)
(V)
1.64
1.28
1.1
- 50
- 25
0
25
50
75
100
125
150
T
J
- Temperature (°C)
0.01
0.1
Time (s)
1
10
100
Threshold Voltage
Single Pulse Power
100
Limited by R
DS(on)
*
10
I
D
- Drain Current (A)
100 μs
1
1 ms
10 ms
0.1
BVDSS Limited
100 ms
10 s, 1 s
T
A
= 25
°C
0.01
0.1
1
10
100
V
DS
- Drain-to-Source Voltage (V)
* V
GS
> minimum V
GS
at which R
DS(on)
is specified
DC
Safe Operating Area
www.vishay.com
4
For technical questions, contact:
pmostechsupport@vishay.com
Document Number: 62827
S13-0111-Rev. A, 21-Jan-13
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
Si2347DS
Vishay Siliconix
TYPICAL CHARACTERISTICS
(25 °C, unless otherwise noted)
6
5
I
D
- Drain Current (A)
3
2
0
0
25
50
75
100
125
150
T
C
- Case Temperature (°C)
Current Derating*
2
0.88
1.5
0.66
Power (W)
1
Power (W)
0
25
50
75
100
125
150
0.44
0.5
0.22
0
0
0
25
50
75
100
125
150
T
A
- Ambient Temperature (°C)
T
C
- Case Temperature (°C)
Power, Junction-to-Case
Power, Junction-to-Ambient
* The power dissipation P
D
is based on T
J(max.)
= 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper
dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package
limit.
Document Number: 62827
S13-0111-Rev. A, 21-Jan-13
For technical questions, contact:
pmostechsupport@vishay.com
www.vishay.com
5
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
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