VS-MURB2020CT-M3, VS-MURB2020CT-1-M3
www.vishay.com
Vishay Semiconductors
Ultrafast Rectifier, 2 x 10 A FRED Pt
®
FEATURES
• Ultrafast recovery time
• Low forward voltage drop
2
1
3
1
2
3
• Low leakage current
• 175 °C operating junction temperature
• Meets MSL level 1, per J-STD-020, LF maximum peak
of 245 °C
• Material categorization: for definitions of compliance
please see
www.vishay.com/doc?99912
D
2
PAK (TO-263AB)
Base
common
cathode
2
TO-262AA
Base
common
cathode
2
DESCRIPTION / APPLICATIONS
MUR.. series are the state of the art ultrafast recovery
rectifiers specifically designed with optimized performance
of forward voltage drop and ultrafast recovery time.
The planar structure and the platinum doped life time
control, guarantee the best overall performance,
ruggedness and reliability characteristics.
These devices are intended for use in the output rectification
stage of SMPS, UPS, DC/DC converters as well as
freewheeling diode in low voltage inverters and chopper
motor drives.
Their extremely optimized stored charge and low recovery
current minimize the switching losses and reduce over
dissipation in the switching element and snubbers.
Anode
1
1
3
Anode
Common 2
cathode
2
Anode
1
1
3
Anode
2
Common
cathode
2
VS-MURB2020CT-M3
VS-MURB2020CT-1-M3
PRIMARY CHARACTERISTICS
I
F(AV)
V
R
V
F
at I
F
t
rr
T
J
max.
Package
Circuit configuration
D
2
PAK
2 x 10 A
200 V
0.85 V
35 ns
175 °C
(TO-263AB), TO-262AA
Common cathode
ABSOLUTE MAXIMUM RATINGS
PARAMETER
Peak repetitive reverse voltage
Average rectified forward current
per leg
total device
SYMBOL
V
RRM
I
F(AV)
I
FSM
I
FM
T
J
, T
Stg
Rated V
R
, square wave, 20 kHz, T
C
= 145 °C
Rated V
R
, T
C
= 145 °C
TEST CONDITIONS
MAX.
200
10
20
100
20
-65 to +175
°C
A
UNITS
V
Non-repetitive peak surge current per leg
Peak repetitive forward current per leg
Operating junction and storage temperatures
ELECTRICAL SPECIFICATIONS
(T
J
= 25 °C unless otherwise specified)
PARAMETER
Breakdown voltage,
blocking voltage
Forward voltage
SYMBOL
V
BR
,
V
R
V
F
I
R
= 100 μA
I
F
= 8 A, T
J
= 125 °C
I
F
= 16 A
I
F
= 16 A, T
J
= 125 °C
Reverse leakage current
Junction capacitance
Series inductance
I
R
C
T
L
S
V
R
= V
R
rated
T
J
= 150 °C, V
R
= V
R
rated
V
R
= 200 V
Measured lead to lead 5 mm from package body
TEST CONDITIONS
MIN.
200
-
-
-
-
-
-
-
TYP.
-
-
-
-
-
-
55
8.0
MAX.
-
0.85
1.15
1.05
15
250
-
-
μA
pF
nH
V
UNITS
Revision: 25-Oct-17
Document Number: 96391
1
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
VS-MURB2020CT-M3, VS-MURB2020CT-1-M3
www.vishay.com
Vishay Semiconductors
DYNAMIC RECOVERY CHARACTERISTICS
(T
J
= 25 °C unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
I
F
= 1.0 A, dI
F
/dt = 50 A/μs, V
R
= 30 V
Reverse recovery time
t
rr
I
F
= 1.0 A, dI
F
/dt = 100 A/μs, V
R
= 30 V
T
J
= 25 °C
T
J
= 125 °C
Peak recovery current
Reverse recovery charge
I
RRM
Q
rr
T
J
= 25 °C
T
J
= 125 °C
T
J
= 25 °C
T
J
= 125 °C
I
F
= 10 A
dI
F
/dt = 200 A/μs
V
R
= 160 V
MIN.
-
-
-
-
-
-
-
-
TYP.
-
19
21
35
1.9
4.8
25
78
MAX.
35
-
-
-
-
-
-
-
A
nC
ns
UNITS
THERMAL - MECHANICAL SPECIFICATIONS
PARAMETER
Maximum junction and storage
temperature range
Thermal resistance,
junction-to-case per leg
Thermal resistance,
junction-to-ambient per leg
Thermal resistance,
case-to-heatsink
Weight
Mounting torque
Marking device
Case style D
2
PAK (TO-263AB)
Case style TO-262AA
SYMBOL
T
J
, T
Stg
R
thJC
R
thJA
R
thCS
Mounting surface, flat, smooth, and greased
TEST CONDITIONS
MIN.
-65
-
-
-
-
-
6.0
(5.0)
TYP.
-
-
-
0.5
2.0
0.07
-
MAX.
175
2.5
50
-
-
-
12
(10)
g
oz.
kgf · cm
(lbf · in)
°C/W
UNITS
°C
MURB2020CT
MURB2020CT-1
I
F
- Instantaneous Forward Current (A)
100
100
I
R
- Reverse Current (μA)
T
J
= 175 °C
10
T
J
= 150 °C
T
J
= 125 °C
T
J
= 100 °C
0.1
10
T
J
= 175 °C
T
J
= 125 °C
T
J
= 25 °C
1
1
0.01
T
J
= 25 °C
0.1
0
0.4
0.8
1.2
1.6
2.0
0.001
0
50
100
150
200
250
V
F
- Forward Voltage Drop (V)
Fig. 1 - Typical Forward Voltage Drop Characteristics
V
R
- Reverse Voltage (V)
Fig. 2 - Typical Values of Reverse Current vs. Reverse Voltage
Revision: 25-Oct-17
Document Number: 96391
2
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
VS-MURB2020CT-M3, VS-MURB2020CT-1-M3
www.vishay.com
1000
Vishay Semiconductors
C
T
- Junction Capacitance (pF)
100
T
J
= 25 °C
10
1
10
100
1000
V
R
- Reverse Voltage (V)
Fig. 3 - Typical Junction Capacitance vs. Reverse Voltage
Z
thJC
- Thermal Impedance (°C/W)
10
1
P
DM
0.1
Single
pulse
(thermal resistance)
0.01
0.00001
D = 0.50
D = 0.20
D = 0.10
D = 0.05
D = 0.02
D = 0.01
0.001
0.01
t
1
t
2
Notes:
1. Duty factor D = t
1
/t
2
2. Peak T
J
= P
DM
x Z
thJC
+ T
C
0.1
1
0.0001
t
1
- Rectangular Pulse Duration (s)
Fig. 4 - Maximum Thermal Impedance Z
thJC
Characteristics
180
15
Allowable Case Temperature (°C)
170
Average Power Loss (W)
12
RMS limit
D = 0.01
D = 0.02
D = 0.05
D = 0.10
D = 0.20
D = 0.50
160
DC
150
Square
wave (D = 0.50)
Rated V
R
applied
9
6
140
See
note (1)
130
0
3
6
9
12
15
3
DC
0
0
3
6
9
12
15
I
F(AV)
- Average Forward Current (A)
Fig. 5 - Maximum Allowable Case Temperature vs.
Average Forward Current
I
F(AV)
- Average Forward Current (A)
Fig. 6 - Forward Power Loss Characteristics
Revision: 25-Oct-17
Document Number: 96391
3
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
VS-MURB2020CT-M3, VS-MURB2020CT-1-M3
www.vishay.com
50
V
R
= 160 V
T
J
= 125 °C
T
J
= 25 °C
250
V
R
= 160 V
T
J
= 125 °C
T
J
= 25 °C
I
F
= 20 A
I
F
= 10 A
I
F
= 5 A
Vishay Semiconductors
40
200
20
I
F
= 20 A
I
F
= 10 A
I
F
= 5 A
1000
Q
rr
(nC)
t
rr
(ns)
30
150
100
10
50
0
100
0
100
1000
dI
F
/dt (A/μs)
Fig. 7 - Typical Reverse Recovery Time vs. dI
F
/dt
dI
F
/dt (A/μs)
Fig. 8 - Typical Stored Charge vs. dI
F
/dt
(1)
Note
Formula used: T
C
= T
J
- (Pd + Pd
REV
) x R
thJC
;
Pd = forward power loss = I
F(AV)
x V
FM
at (I
F(AV)
/D) (see fig. 6);
Pd
REV
= inverse power loss = V
R1
x I
R
(1 - D); I
R
at V
R1
= rated V
R
(3)
I
F
0
t
rr
t
a
t
b
Q
rr
(2)
(4)
I
RRM
0.5 I
RRM
di
(rec)M
/dt
(5)
0.75 I
RRM
(1)
di
F
/dt
(1) di
F
/dt - rate of change of current
through zero crossing
(2) I
RRM
- peak reverse recovery current
(3) t
rr
- reverse recovery time measured
from zero crossing point of negative
going I
F
to point where a line passing
through 0.75 I
RRM
and 0.50 I
RRM
extrapolated to zero current.
(4)
Q
rr
- area under curve defined by t
rr
and I
RRM
Q
rr
=
t
rr
x I
RRM
2
(5) di
(rec)M
/dt - peak rate of change of
current during t
b
portion of t
rr
Fig. 9 - Reverse Recovery Waveform and Definitions
Revision: 25-Oct-17
Document Number: 96391
4
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
VS-MURB2020CT-M3, VS-MURB2020CT-1-M3
www.vishay.com
ORDERING INFORMATION TABLE
Device code
Vishay Semiconductors
VS- MUR
1
1
2
3
4
5
6
7
8
-
-
-
-
-
-
-
-
2
B
3
20
4
20
5
CT
6
-1
7
L
8
-M3
9
Vishay Semiconductors product
Ultrafast MUR series
B = D
2
PAK (TO-263AB) / TO-262AA
Current rating (20 = 20 A)
Voltage rating (20 = 200 V)
CT = center tap (dual) TO-220 / D
2
PAK (TO-263AB) / TO-262AA
-1 = TO-262AA
None = D
2
PAK (TO-263AB)
None = tube (50 pieces)
L = tape and reel (left oriented, for D
2
PAK (TO-263AB) package)
R = tape and reel (right oriented, for D
2
PAK (TO-263AB) package)
9
-
Environmental digit:
-M3 = halogen-free, RoHS-compliant, and terminations lead (Pb)-free
LINKS TO RELATED DOCUMENTS
Dimensions
Part marking information
Packaging information
SPICE model
D
2
PAK
(TO-263AB)
TO-262AA
D
2
PAK (TO-263AB)
TO-262AA
D
2
PAK (TO-263AB)
www.vishay.com/doc?96164
www.vishay.com/doc?96165
www.vishay.com/doc?95444
www.vishay.com/doc?95443
www.vishay.com/doc?96424
www.vishay.com/doc?95622
Revision: 25-Oct-17
Document Number: 96391
5
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
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