a. Pulse width limited by maximum junction temperature.
b. Surface mounted on an FR4 board.
T
A
= 25 °C
T
A
= 70 °C
T
A
= 25 °C
T
A
= 70 °C
Symbol
V
DS
V
GS
I
D
I
DM
P
D
R
thJA
T
J
, T
stg
0.2
0.16
0.8
0.36
0.23
350
b
- 55 to 150
TN2404K
TN2404KL/BS107KL
240
± 20
0.3
0.25
1.4
0.8
0.51
156
W
°C/W
°C
A
Symbol
V
Document Number: 72225
S12-1767-Rev. C, 23-Jul-12
For technical questions, contact:
pmostechsupport@vishay.com
www.vishay.com
1
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
TN2404K/TN2404KL/BS107KL
Vishay Siliconix
SPECIFICATIONS
(T
A
= 25 °C, unless otherwise noted)
Parameter
Static
Drain-Source Breakdown Voltage
Gate-Source Threshold Voltage
Gate-Source Leakage
Zero Gate Voltage Drain Current
On-State Drain Current
a
V
DS
V
GS(th)
I
GSS
I
DSS
I
D(on)
V
GS
= 0 V, I
D
= 100 µA
V
DS
= V
GS
, I
D
= 250 µA
V
DS
= 0 V, V
GS
= ± 20 V
V
DS
= 192 V, V
GS
= 0 V
V
DS
= 192 V, V
GS
= 0 V, T
J
= 55 °C
V
DS
½10
V, V
GS
= 10 V
V
DS
½10
V, V
GS
= 4.5 V
V
GS
½10
V, I
D
= 0.3 A
Drain-Source On-State Resistance
a
Forward Transconductance
a
Diode Forward Voltage
Dynamic
b
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
V
DD
= 60 V, R
L
= 200
I
D
0.3 A, V
GEN
= 10 V, R
g
= 25
V
DS
= 192 V, V
GS
= 10 V, I
D
= 0.5 A
4.87
0.56
1.53
5
12
35
16
10
20
60
25
ns
8
nC
R
DS(on)
g
fs
V
SD
V
GS
½4.5
V, I
D
= 0.2 A
V
GS
½2.5
V, I
D
= 0.1 A
V
DS
= 10 V, I
D
= 0.3 A
V
GS
= 0 V, I
S
= 0.3 A
0.8
0.5
2.2
2.3
2.4
1.6
0.8
1.2
4
4
6
S
V
240
0.8
257
1.65
2
± 100
1
10
µA
A
V
nA
Symbol
Test Conditions
Limits
Min.
Typ.
a
Max.
Unit
Notes:
a. Pulse test; pulse width
300 µs, duty cycle
2 %
b. Guaranteed by design, not subject to production testing.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
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For technical questions, contact:
pmostechsupport@vishay.com
Document Number: 72225
S12-1767-Rev. C, 23-Jul-12
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
TN2404K/TN2404KL/BS107KL
Vishay Siliconix
TYPICAL CHARACTERISTICS
(25 °C, unless otherwise noted)
1.8
V
GS
= 10 thru 3
V
1.5
I
D
− Drain Current (A)
I
D
− Drain Current (A)
1.2
1.0
0.8
0.6
0.4
0.2
0.0
0
1
2
3
4
5
0
1
V
DS
− Drain-to-Source
Voltage
(V)
2
3
4
5
V
GS
− Gate-to-Source
Voltage
(V)
6
1.4
T
C
= −55 C
25 C
1.2
125 C
2.5
V
0.9
0.6
0.3
2
V
0.0
Output Characteristics
5
300
Transfer Characteristics
R
DS(on)
− On-Resistance (
C − Capacitance (pF)
4
250
)
200
3
C
iss
V
GS
= 4.5
V
V
GS
= 10
V
150
2
100
1
50
C
rss
C
oss
20
30
40
50
0
0.0
0
0.2
0.4
0.6
0.8
1.0
1.2
0
10
I
D
− Drain Current (A)
V
DS
− Drain-to-Source
Voltage
(V)
On-Resistance vs. Drain Current
10
R
DS(on)
− On-Resiistance (Normalized)
V
GS
− Gate-to-Source
Voltage
(V)
V
DS
= 192
V
I
D
= 0.5 A
8
2.2
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
−50
Capacitance
V
GS
= 10
V
I
D
= 0.3 A
6
V
GS
= 4.5
V
I
D
= 0.2 A
4
2
0
0
1
2
3
4
5
Q
g
− Total Gate Charge (nC)
−25
0
25
50
75
100
T
J
− Junction Temperature ( C)
125
150
Gate Charge
On-Resistance vs. Junction Temperature
Document Number: 72225
S12-1767-Rev. C, 23-Jul-12
For technical questions, contact:
pmostechsupport@vishay.com
www.vishay.com
3
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
TN2404K/TN2404KL/BS107KL
Vishay Siliconix
TYPICAL CHARACTERISTICS
(25 °C, unless otherwise noted)
10
8
7
I
S
− Source Current (A)
1
R
DS(on)
− On-Resistance (
)
6
I
D
= 50 mA
5
4
3
2
I
D
= 10 mA
1
0
0
2
4
6
8
V
GS
− Gate-to-Source
Voltage
(V)
10
I
D
= 100 mA
0.1
T
J
= −55 C
T
J
= 25 C
0.01
T
J
= 150 C
0.001
0.0
0.2
0.4
0.6
0.8
1.0
1.2
V
SD
− So
u
rce-to-Drain
V
oltage (
V
)
1.4
Source-Drain Diode Forward Voltage
On-Resistance vs. Gate-to-Source Voltage
0.3
0.2
I
D
= 250
µA
0.1
V
GS(th)
Variance
(V)
−0.0
−0.1
−0.2
−0.3
−0.4
−0.5
−50
−25
0
25
50
75
100
T
J
− Temperature (°C)
125
150
Threshold Voltage
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For technical questions, contact:
pmostechsupport@vishay.com
Document Number: 72225
S12-1767-Rev. C, 23-Jul-12
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see
www.vishay.com/ppg?72225.
Document Number: 72225
S12-1767-Rev. C, 23-Jul-12
For technical questions, contact:
pmostechsupport@vishay.com
www.vishay.com
5
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
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