SiR826ADP-T1-GE3 (Lead (Pb)-free and Halogen-free)
ABSOLUTE MAXIMUM RATINGS
(T
A
= 25 °C, unless otherwise noted)
Parameter
Drain-Source Voltage
Gate-Source Voltage
T
C
= 25 °C
Continuous Drain Current (T
J
= 150 °C)
T
C
= 70 °C
T
A
= 25 °C
T
A
= 70 °C
Pulsed Drain Current (t = 300 μs)
Continuous Source-Drain Diode Current
Single Pulse Avalanche Current
Single Pulse Avalanche Energy
T
C
= 25 °C
T
A
= 25 °C
L = 0.1 mH
T
C
= 25 °C
Maximum Power Dissipation
T
C
= 70 °C
T
A
= 25 °C
T
A
= 70 °C
Operating Junction and Storage Temperature Range
Soldering Recommendations (Peak Temperature)
d, e
T
J
, T
stg
P
D
I
DM
I
S
I
AS
E
AS
I
D
Symbol
V
DS
V
GS
Limit
80
± 20
60
a
60
a
23.8
b, c
19
b, c
100
60
a
5.6
b, c
35
61
104
66.6
6.25
b, c
4
b, c
-55 to 150
260
°C
W
mJ
A
Unit
V
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambient
b, f
Maximum Junction-to-Case (Drain)
t
≤
10 s
Steady State
Symbol
R
thJA
R
thJC
Typical
15
0.9
Maximum
20
1.2
Unit
°C/W
Notes
a. Package limited.
b. Surface mounted on 1" x 1" FR4 board.
c. t = 10 s.
d. See solder profile (www.vishay.com/doc?73257). The PowerPAK SO-8 is a leadless package. The end of the lead terminal is exposed copper
(not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not
required to ensure adequate bottom side solder interconnection.
e. Rework conditions: Manual soldering with a soldering iron is not recommended for leadless components.
f. Maximum under steady state conditions is 54 °C/W.
S14-1081-Rev. B, 26-May-14
Document Number: 62569
1
For technical questions, contact:
pmostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
SiR826ADP
www.vishay.com
Vishay Siliconix
SPECIFICATIONS
(T
J
= 25 °C, unless otherwise noted)
Parameter
Static
Drain-Source Breakdown Voltage
V
DS
Temperature Coefficient
V
GS(th)
Temperature Coefficient
Gate-Source Threshold Voltage
Gate-Source Leakage
Zero Gate Voltage Drain Current
On-State Drain Current
a
Drain-Source On-State Resistance
a
Forward
Transconductance
a
V
DS
ΔV
DS
/T
J
ΔV
GS(th)
/T
J
V
GS(th)
I
GSS
I
DSS
I
D(on)
R
DS(on)
g
fs
C
iss
C
oss
C
rss
V
DS
= 40 V, V
GS
= 10 V, I
D
= 20 A
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Output Charge
Gate Resistance
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Drain-Source Body Diode Characteristics
Continuous Source-Drain Diode Current
Pulse Diode Forward Current
a
Body Diode Voltage
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
Reverse Recovery Fall Time
Reverse Recovery Rise Time
I
S
I
SM
V
SD
t
rr
Q
rr
t
a
t
b
I
F
= 20 A, dI/dt = 100 A/μs, T
J
= 25 °C
I
S
= 5 A
T
C
= 25 °C
-
-
-
-
-
-
-
-
-
0.73
53
65
25
28
60
100
1.1
105
130
-
-
A
V
ns
nC
ns
Q
g
Q
gs
Q
gd
Q
oss
R
g
t
d(on)
t
r
t
d(off)
t
f
t
d(on)
t
r
t
d(off)
t
f
V
DD
= 40 V, R
L
= 2
Ω
I
D
≅
20 A, V
GEN
= 7.5 V, R
g
= 1
Ω
V
DD
= 40 V, R
L
= 2
Ω
I
D
≅
20 A, V
GEN
= 10 V, R
g
= 1
Ω
V
DS
= 40 V, V
GS
= 0 V
f = 1 MHz
V
DS
= 40 V, V
GS
= 7.5 V, I
D
= 20 A
V
DS
= 40 V, V
GS
= 4.5 V, I
D
= 20 A
V
DS
= 40 V, V
GS
= 0 V, f = 1 MHz
V
GS
= 0 V, I
D
= 250 μA
I
D
= 250 μA
V
DS
= V
GS
, I
D
= 250 μA
V
DS
= 0 V, V
GS
= ± 20 V
V
DS
= 80 V, V
GS
= 0 V
V
DS
= 80 V, V
GS
= 0 V, T
J
= 55 °C
V
DS
≥
5 V, V
GS
= 10 V
V
GS
= 10 V, I
D
= 20 A
V
GS
= 7.5 V, I
D
= 20 A
V
GS
= 4.5 V, I
D
= 15 A
V
DS
= 10 V, I
D
= 20 A
Dynamic
b
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
-
-
-
-
-
-
-
-
-
0.3
-
-
-
-
-
-
-
-
2800
1100
93
57
42
25
8.5
10
70
0.95
9
12
34
7
16
15
32
8
-
-
-
86
63
38
-
-
105
1.9
18
24
68
14
32
30
64
16
ns
Ω
nC
pF
80
-
-
1.2
-
-
-
30
-
-
-
-
-
47
-5.7
-
-
-
-
-
0.0046
0.0049
0.0062
68
-
-
-
2.8
± 100
1
10
-
0.0055
0.0059
0.0087
-
S
Ω
V
mV/°C
V
nA
μA
A
Symbol
Test Conditions
Min.
Typ.
Max.
Unit
Notes
a. Pulse test; pulse width
≤
300 μs, duty cycle
≤
2 %.
b. Guaranteed by design, not subject to production testing.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
S14-1081-Rev. B, 26-May-14
Document Number: 62569
2
For technical questions, contact:
pmostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
SiR826ADP
www.vishay.com
TYPICAL CHARACTERISTICS
(25 °C, unless otherwise noted)
100
V
GS
= 10 V thru 4 V
80
I
D
- Drain Current (A)
I
D
- Drain Current (A)
100
Vishay Siliconix
80
60
60
T
C
= 25
°C
40
40
20
V
GS
= 3 V
0
0
1
2
3
4
V
DS
- Drain-to-Source Voltage (V)
V
GS
= 2 V
5
20
T
C
= 125
°C
T
C
= - 55
°C
0
1
2
3
4
5
0
V
GS
-
Gate-to-Source
Voltage (V)
Output Characteristics
Transfer Characteristics
0.008
4500
0.007
R
DS(on)
- On-Resistance (Ω)
V
GS
= 4.5 V
0.006
C - Capacitance (pF)
3600
C
iss
2700
C
oss
1800
0.005
V
GS
= 7.5 V
0.004
900
V
GS
= 10 V
C
rss
0
0
20
40
60
I
D
- Drain Current (A)
80
100
0
16
32
48
64
80
V
DS
- Drain-to-Source Voltage (V)
0.003
On-Resistance vs. Drain Current
Capacitance
10
I
D
= 20 A
2.0
V
GS
-
Gate-to-Source
Voltage (V)
8
V
DS
= 30 V
R
DS(on)
- On-Resistance (Normalized)
I
D
= 20 A
1.7
V
GS
= 10 V
6
V
DS
= 40 V
V
DS
= 50 V
1.4
V
GS
= 4.5 V
1.1
4
2
0.8
0
0
12
24
36
48
Q
g
- Total
Gate
Charge (nC)
60
0.5
- 50 - 25
0
25
50
75
100
T
J
- Junction Temperature (°C)
125
150
Gate Charge
S14-1081-Rev. B, 26-May-14
On-Resistance vs. Junction Temperature
Document Number: 62569
3
For technical questions, contact:
pmostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
SiR826ADP
www.vishay.com
TYPICAL CHARACTERISTICS
(25 °C, unless otherwise noted)
100
0.030
Vishay Siliconix
10
I
S
-
Source
Current (A)
1
T
J
= 25 °C
R
DS(on)
- On-Resistance (Ω)
T
J
= 150
°C
0.024
I
D
= 20 A
0.018
0.1
0.012
T
J
= 125
°C
0.006
T
J
= 25
°C
0.01
0.001
0.0
0.2
0.4
0.6
0.8
1.0
1.2
V
SD
-
Source-to-Drain
Voltage (V)
0
0
2
4
6
8
10
V
GS
-
Gate-to-Source
Voltage (V)
Source-Drain Diode Forward Voltage
On-Resistance vs. Gate-to-Source Voltage
0.5
200
0.2
V
GS(th)
- Variance (V)
160
I
D
= 5 mA
- 0.4
I
D
= 250 μA
- 0.7
Power (W)
150
- 0.1
120
80
40
- 1.0
- 50
- 25
0
25
50
75
100
T
J
- Temperature (°C)
125
0
0.001
0.01
0.1
Time (s)
1
10
Threshold Voltage
100
I
DM
Limited
Single Pulse Power, Junction-to-Ambient
10
I
D
- Drain Current (A)
1 ms
I
D
Limited
10 ms
1
100 ms
Limited by R
DS(on)
*
0.1
T
A
= 25 °C
Single
Pulse
0.01
0.01
1
s
10
s
DC
BVDSS Limited
0.1
1
10
100
V
DS
- Drain-to-Source Voltage (V)
* V
GS
> minimum V
GS
at which R
DS(on)
is
specified
Safe Operating Area, Junction-to-Ambient
S14-1081-Rev. B, 26-May-14
Document Number: 62569
4
For technical questions, contact:
pmostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
SiR826ADP
www.vishay.com
TYPICAL CHARACTERISTICS
(25 °C, unless otherwise noted)
120
Vishay Siliconix
96
I
D
- Drain Current (A)
72
48
Package Limited
24
0
0
25
50
75
100
125
150
T
C
- Case Temperature (°C)
Current Derating*
125
3.0
100
2.4
Power (W)
Power (W)
75
1.8
50
1.2
25
0.6
0
0
25
50
75
100
T
C
- Case Temperature (°C)
125
150
0.0
0
25
50
75
100
125
150
T
A
- Ambient Temperature (°C)
Power, Junction-to-Case
Power, Junction-to-Ambient
* The power dissipation P
D
is based on T
J (max.)
= 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper
dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the
package limit.
S14-1081-Rev. B, 26-May-14
Document Number: 62569
5
For technical questions, contact:
pmostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
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