b. See solder profile (www.vishay.com/ppg?73257). The PowerPAK SO-8 is a leadless package. The end of the lead terminal is exposed copper
(not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not
required to ensure adequate bottom side solder interconnection
c. Rework conditions: manual soldering with a soldering iron is not recommended for leadless components
S09-0270-Rev. F, 16-Feb-09
Document Number: 71874
1
For technical questions, contact:
pmostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
Si7370DP
www.vishay.com
Vishay Siliconix
SPECIFICATIONS
(T
J
= 25 °C, unless otherwise noted)
PARAMETER
Static
Gate threshold voltage
Gate-body leakage
Zero gate voltage drain current
On-state drain current
a
Drain-source on-state resistance
a
Forward transconductance
a
Diode forward
Dynamic
b
Total gate charge
Gate-source charge
Gate-drain charge
Gate resistance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Source-drain reverse recovery time
Q
g
Q
gs
Q
gd
R
g
t
d(on)
t
r
t
d(off)
t
f
t
rr
I
F
= 3 A, di/dt = 100 A/μs
V
DD
= 30 V, R
L
= 30
I
D
1 A, V
GEN
= 10 V, R
g
= 6
V
DS
= 30 V, V
GS
= 10 V, I
D
= 12 A
-
-
-
0.2
-
-
-
-
-
46
11.5
11.5
0.85
16
12
50
30
40
57
-
-
1.2
25
18
75
45
60
ns
nC
voltage
a
V
GS(th)
I
GSS
I
DSS
I
D(on)
R
DS(on)
g
fs
V
SD
V
DS
= V
GS
, I
D
= 250 μA
V
DS
= 0 V, V
GS
= ± 20 V
V
DS
= 60 V, V
GS
= 0 V
V
DS
= 60 V, V
GS
= 0 V, T
J
= 55 °C
V
DS
5 V, V
GS
= 10 V
V
GS
= 10 V, I
D
= 12 A
V
GS
= 6 V, I
D
= 10 A
V
DS
= 15 V, I
D
= 10 A
I
S
= 3 A, V
GS
= 0 V
2
-
-
-
50
-
-
-
-
-
-
-
-
-
0.0090
0.0105
50
0.75
4
± 100
1
5
-
0.0110
0.0130
-
1.2
V
nA
μA
A
S
V
SYMBOL
TEST CONDITIONS
MIN.
TYP.
MAX.
UNIT
Notes
a. Pulse test; pulse width
300
μs, duty cycle
2 %
b. Guaranteed by design, not subject to production testing
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
S09-0270-Rev. F, 16-Feb-09
Document Number: 71874
2
For technical questions, contact:
pmostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
Si7370DP
www.vishay.com
TYPICAL CHARACTERISTICS
(25 °C, unless otherwise noted)
50
V
GS
= 10 V thru 5 V
Vishay Siliconix
10
V
DS
= 30 V
I
D
= 5 A
8
40
I
D
- Drain Current (A)
V
GS
- Gate-to-Source Voltage (V)
4V
30
6
20
4
10
2 V, 3 V
2
0
0
2
4
6
8
10
V
DS
- Drain-to-Source Voltage (V)
0
0
10
20
30
40
50
Q
g
- Total Gate Charge (nC)
Output Characteristics
Gate Charge
50
100
40
I
S
- Source Current (A)
I
D
- Drain Current (A)
30
T
J
= 150 °C
10
20
T
C
= 125 °C
T
J
= 25 °C
10
25 °C
- 55 °C
0
0
1
2
3
4
5
V
GS
- Gate-to-Source Voltage (V)
6
1
0.0
0.2
0.4
0.6
0.8
1.0
1.2
V
SD
- Source-to-Drain Voltage (V)
Transfer Characteristics
Source-Drain Diode Forward Voltage
0.020
4000
3500
R
DS(on)
- On-Resistance ()
0.015
V
GS
= 6 V
0.010
V
GS
= 10 V
0.005
C - Capacitance (pF)
3000
2500
2000
1500
1000
500
C
rss
C
iss
C
oss
0.000
0
10
20
30
40
50
I
D
- Drain Current (A)
0
0
15
30
45
60
V
DS
- Drain-to-Source Voltage (V)
On-Resistance vs. Drain current
Capacitance
S09-0270-Rev. F, 16-Feb-09
Document Number: 71874
3
For technical questions, contact:
pmostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
Si7370DP
www.vishay.com
TYPICAL CHARACTERISTICS
(25 °C, unless otherwise noted)
2.1
R
DS(on)
- On-Resistance (Normalized)
1.8
1.5
V
GS
= 10 V
I
D
= 5 A
1.0
Vishay Siliconix
0.6
I
D
= 250 µA
V
GS(th)
Variance (V)
- 25
0
25
50
75
100
125
150
175
0.2
1.2
0.9
0.6
0.3
0.0
- 50
- 0.2
- 0.6
- 1.0
- 1.4
- 50
- 25
0
25
50
75
100
125
150
175
T
J
- Junction Temperature (°C)
T
J
- Temperature (°C)
On-Resistance vs. Junction Temperature
0.10
100
Threshold Voltage
0.08
80
I
D
= 5 A
R
DS(on)
- On-Resistance ()
0.04
Power (W)
0
2
4
6
8
V
GS
- Gate-to-Source Voltage (V)
10
0.06
60
40
0.02
20
0.00
0
0.001
0.01
0.1
Time (s)
1
10
On-Resistance vs. Gate-to-Source Voltage
100
Single Pulse Power, Junction-to-Ambient
10 µs
Limited
by
R
DS(on)
*
10
I
D
- Drain Current (A)
1 ms
10 ms
1
100 ms
1s
0.1
T
C
= 25 °C
Single Pulse
10 s
100 s, DC
0.01
0.01
100 µs
1
10
100
0.1
V
DS
- Drain-to-Source Voltage (V)
* V
DS
> minimum V
GS
at which R
DS(on)
is specified
Safe Operating Area
S09-0270-Rev. F, 16-Feb-09
Document Number: 71874
4
For technical questions, contact:
pmostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
technology and package reliability represent a composite of all qualified locations. For related documents such as package / tape drawings, part marking, and
reliability data, see
www.vishay.com/ppg?71874.
S09-0270-Rev. F, 16-Feb-09
Document Number: 71874
5
For technical questions, contact:
pmostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
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