Si7121ADN-T1-GE3 (Lead (Pb)-free and Halogen-free)
P-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS
(T
A
= 25 °C, unless otherwise noted)
PARAMETER
Drain-Source Voltage
Gate-Source Voltage
T
C
= 25 °C
Continuous Drain Current (T
J
= 150 °C)
T
C
= 70 °C
T
A
= 25 °C
T
A
= 70 °C
Pulsed Drain Current (t = 100 μs)
Continuous Source-Drain Diode Current
Avalanche Current
Single-Pulse Avalanche Energy
T
C
= 25 °C
T
A
= 25 °C
L = 0.1 mH
T
C
= 25 °C
Maximum Power Dissipation
T
C
= 70 °C
T
A
= 25 °C
T
A
= 70 °C
Operating Junction and Storage Temperature Range
Soldering Recommendations (Peak Temperature)
c,d
T
J
, T
stg
P
D
I
DM
I
S
I
AS
E
AS
I
D
SYMBOL
V
DS
V
GS
LIMIT
-30
± 25
-18
e
-18
e
-12
a,b
-9.6
a,b
-50
-18
e
-2.9
a,b
-14
9.8
27.8
17.8
3.5
a,b
2.2
a,b
-50 to 150
260
°C
W
mJ
A
UNIT
V
Notes
a. Surface mounted on 1" x 1" FR4 board.
b. t = 10 s.
c. See solder profile (www.vishay.com/doc?73257). The PowerPAK 1212-8 is a leadless package. The end of the lead terminal is exposed
copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed
and is not required to ensure adequate bottom side solder interconnection.
d. Rework conditions: manual soldering with a soldering iron is not recommended for leadless components.
e. Package limited.
S13-2638-Rev. A, 30-Dec-13
Document Number: 62930
1
For technical questions, contact:
pmostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
Si7121ADN
www.vishay.com
Vishay Siliconix
SYMBOL
R
thJA
R
thJC
TYPICAL
29
3.3
MAXIMUM
36
4.5
UNIT
°C/W
THERMAL RESISTANCE RATINGS
PARAMETER
Maximum Junction-to-Ambient
a,b
t
10 s
Maximum Junction-to-Case (Drain)
Steady State
Notes
a.
Surface mounted on 1" x 1" FR4 board.
b.
Maximum under steady state conditions is 81 °C/W.
SPECIFICATIONS
(T
J
= 25 °C, unless otherwise noted)
PARAMETER
Static
Drain-Source Breakdown Voltage
V
DS
Temperature Coefficient
V
GS(th)
Temperature Coefficient
Gate-Source Threshold Voltage
Gate-Source Leakage
Zero Gate Voltage Drain Current
On-State Drain Current
a
Drain-Source On-State Resistance
a
Forward Transconductance
a
Dynamic
b
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
SYMBOL
V
DS
V
DS
/T
J
V
GS(th)
/T
J
V
GS(th)
I
GSS
I
DSS
I
D(on)
R
DS(on)
g
fs
C
iss
C
oss
C
rss
Q
g
TEST CONDITIONS
V
GS
= 0 V, I
D
= -250 μA
I
D
= -250 μA
V
DS
= V
GS
, I
D
= -250 μA
V
DS
= 0 V, V
GS
= ± 25 V
V
DS
= -30 V, V
GS
= 0 V
V
DS
= -30 V, V
GS
= 0 V, T
J
= 55 °C
V
DS
-5 V, V
GS
= -10 V
V
GS
= -10 V, I
D
= -7 A
V
GS
= -6 V, I
D
= -5 A
V
GS
= -4.5 V, I
D
= -3 A
V
DS
= -15 V, I
D
= -7 A
MIN.
-30
-
-
-1.2
-
-
-
-20
-
-
-
-
-
-
-
-
-
-
-
0.64
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
TYP.
-
-23
4.8
-
-
-
-
-
0.0125
0.0160
0.0210
52
1870
245
212
33
16
5.6
5.5
3.2
38
34
24
10
8
9
22
7
-
-
-0.8
21
12
11
10
MAX.
-
-
-
-2.5
± 100
-1
-10
-
0.0150
0.0200
0.0260
-
-
-
-
50
25
-
-
6.4
57
51
36
20
16
18
33
14
-18
c
-50
-1.2
32
20
-
-
UNIT
V
mV/°C
V
nA
μA
A
S
V
DS
= -15 V, V
GS
= 0 V, f = 1 MHz
V
DS
= -15 V, V
GS
= -10 V, I
D
= -12 A
pF
Gate-Source Charge
Q
gs
V
DS
= -15 V, V
GS
= -4.5 V, I
D
= -12 A
Gate-Drain Charge
Q
gd
f = 1 MHz
Gate Resistance
R
g
Turn-On Delay Time
t
d(on)
Rise Time
t
r
V
DD
= -15 V, R
L
= 1.6
I
D
-9.6 A, V
GEN
= -4.5 V, R
g
= 1
Turn-Off DelayTime
t
d(off)
Fall Time
t
f
Turn-On Delay Time
t
d(on)
Rise Time
t
r
V
DD
= -15 V, R
L
= 1.6
I
D
-9.6 A, V
GEN
= -10 V, R
g
= 1
Turn-Off DelayTime
t
d(off)
Fall Time
t
f
Drain-Source Body Diode Characteristics
T
C
= 25 °C
Continuous Source-Drain Diode Current
I
S
d
I
SM
Pulse Diode Forward Current
I
F
= -9.6 A
Body Diode Voltage
V
SD
Body Diode Reverse Recovery Time
t
rr
Body Diode Reverse Recovery Charge
Q
rr
I
F
= -9.6 A, dI/dt = 100 A/μs, T
J
= 25 °C
Reverse Recovery Fall Time
t
a
Reverse Recovery Rise Time
t
b
Notes
a. Pulse test; pulse width
300 μs, duty cycle
2 %.
b. Guaranteed by design, not subject to production testing.
c. Package limited.
d. t = 100 μs.
nC
ns
A
V
ns
nC
ns
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
S13-2638-Rev. A, 30-Dec-13
Document Number: 62930
2
For technical questions, contact:
pmostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
Si7121ADN
www.vishay.com
TYPICAL CHARACTERISTICS
(25 °C, unless otherwise noted)
50
Vishay Siliconix
5
V
GS
= 10V thru 5V
V
GS
= 4.5 V
V
GS
= 4 V
40
I
D
- Drain Current (A)
4
I
D
- Drain Current (A)
30
3
20
2
T
C
= 25
°C
10
V
GS
= 3 V
1
T
C
= 125
°C
T
C
= - 55
°C
0
0
0.5
1
1.5
2
2.5
3
V
DS
- Drain-to-Source Voltage (V)
0
0
1
2
3
4
V
GS
-
Gate-to-Source
Voltage (V)
Output Characteristics
0.04
Transfer Characteristics
2500
R
DS(on)
- On-Resistance (Ω)
0.03
C - Capacitance (pF)
V
GS
= 4.5 V
0.02
V
GS
= 6 V
V
GS
= 10 V
0.01
2000
C
iss
1500
1000
500
C
rss
0
0
10
20
30
40
50
0
6
12
18
24
C
oss
0
30
I
D
- Drain Current (A)
V
DS
- Drain-to-Source Voltage (V)
On-Resistance vs. Drain Current and Gate Voltage
1.65
I
D
= 12 A
V
DS
= 8 V
Capacitance
10
V
GS
= 10 V, 7 A
,
R
DS(on)
- On-Resistance (Normalized)
1.4
V
GS
-
Gate-to-Source
Voltage (V)
8
V
DS
= 15 V
6
V
GS
= 4.5 V, 3 A
1.15
4
V
DS
= 24 V
2
0.9
0
0
7
14
21
28
35
Q
g
- Total
Gate
Charge (nC)
0.65
- 50
V
GS
= 6 V, 5 A
- 25
0
25
50
75
100
125
150
T
J
- Junction Temperature (°C)
Gate Charge
S13-2638-Rev. A, 30-Dec-13
On-Resistance vs. Junction Temperature
Document Number: 62930
3
For technical questions, contact:
pmostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
Si7121ADN
www.vishay.com
TYPICAL CHARACTERISTICS
(25 °C, unless otherwise noted)
100
0.05
I
D
= 7 A
0.04
10
R
DS(on)
- On-Resistance (Ω)
I
S
-
Source
Current (A)
Vishay Siliconix
0.03
T
J
= 125
°C
T
J
= 25
°C
0.01
T
J
= 150
°C
1
T
J
= 25
°C
0.02
0.1
0.0
0.3
0.6
0.9
1.2
V
SD
-
Source-to-Drain
Voltage (V)
0
2
4
6
8
10
V
GS
-
Gate-to-Source
Voltage (V)
Source-Drain Diode Forward Voltage
2
On-Resistance vs. Gate-to-Source Voltage
120
I
D
= 250 μA
96
1.75
Power (W)
- 50
- 25
0
25
50
75
100
125
150
V
GS(th)
(V)
72
1.5
48
1.25
24
1
0
0.001
0.01
0.1
Time (s)
1
10
T
J
- Temperature (°C)
Threshold Voltage
Single Pulse Power, Junction-to-Ambient
S13-2638-Rev. A, 30-Dec-13
Document Number: 62930
4
For technical questions, contact:
pmostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
Si7121ADN
www.vishay.com
TYPICAL CHARACTERISTICS
(25 °C, unless otherwise noted)
100
Vishay Siliconix
Limited by I
DM
Limited by R
DS(on)
*
100 μs
1 ms
10
I
D
- Drain Current (A)
1
10 ms
100 ms
1
s
10
s
DC
T
A
= 25
°C
Single
Pulse
BVDSS Limited
0.1
0.01
0.1
1
10
100
V
DS
- Drain-to-Source Voltage (V)
* V
GS
> minimum V
GS
at which R
DS(on)
is
specified
Safe Operating Area, Junction-to-Ambient
40
35
30
I
D
- Drain Current (A)
Power (W)
28
21
20
14
10
7
0
0
25
50
75
100
125
150
T
C
- Case Temperature (°C)
0
0
25
50
75
100
125
150
T
C
- Case Temperature (°C)
Current Derating*
Power, Junction-to-Case
* The power dissipation P
D
is based on T
J(max.)
= 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper
dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the
package limit.
S13-2638-Rev. A, 30-Dec-13
Document Number: 62930
5
For technical questions, contact:
pmostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
京公网安备 11010802033920号
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved
电子工程世界
