VS-EPH3006L-N3
www.vishay.com
Vishay Semiconductors
Hyperfast Rectifier, 30 A FRED Pt
®
FEATURES
• Low forward voltage drop
• Hyperfast soft recovery time
2
1
• 175 °C operating junction temperature
• Designed and qualified according to commercial
qualification
3
TO-247AD 2L
Base cathode
2
• Material categorization:
for definitions of compliance
www.vishay.com/doc?99912
please
see
DESCRIPTION / APPLICATIONS
Hyperfast recovery rectifiers designed with optimized
performance of forward voltage drop, hyperfast recovery
time, and soft recovery.
The planar structure and the platinum doped life time control
guarantee the best overall performance, ruggedness and
reliability characteristics.
TO-247AD 2L
30 A
600 V
1.4 V
26 ns
175 °C
Single die
1
Cathode
3
Anode
PRODUCT SUMMARY
Package
I
F(AV)
V
R
V
F
at I
F
t
rr
typ.
T
J
max.
Diode variation
These devices are intended for use in PFC Boost stage in
the AC/DC section of SMPS, inverters or as freewheeling
diodes.
The extremely optimized stored charge and low recovery
current minimize the switching losses and reduce over
dissipation in the switching element and snubbers.
ABSOLUTE MAXIMUM RATINGS
PARAMETER
Repetitive peak reverse voltage
Average rectified forward current
Non-repetitive peak surge current
Operating junction and storage temperatures
SYMBOL
V
RRM
I
F(AV)
I
FSM
T
J
, T
Stg
T
C
= 112 °C
T
C
= 25 °C, t
p
= 8.3 ms half sine wave
TEST CONDITIONS
MAX.
600
30
240
-55 to +175
UNITS
V
A
°C
ELECTRICAL SPECIFICATIONS
(T
J
= 25 °C unless otherwise specified)
PARAMETER
Breakdown voltage,
blocking voltage
Forward voltage
SYMBOL
V
BR
,
V
R
V
F
I
R
C
T
L
S
I
R
= 100 μA
I
F
= 30 A
I
F
= 30 A, T
J
= 150 °C
V
R
= V
R
rated
T
J
= 150 °C, V
R
= V
R
rated
V
R
= 600 V
Measured lead to lead 5 mm from package body
TEST CONDITIONS
MIN.
600
-
-
-
-
-
-
TYP.
-
2.0
1.4
0.02
-
20
8.0
MAX.
-
2.65
1.8
30
300
-
-
μA
pF
nH
V
UNITS
Reverse leakage current
Junction capacitance
Series inductance
Revision: 03-Mar-17
Document Number: 95780
1
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
VS-EPH3006L-N3
www.vishay.com
Vishay Semiconductors
DYNAMIC RECOVERY CHARACTERISTICS
(T
J
= 25 °C unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
I
F
= 1 A, dI
F
/dt = 50 A/μs, V
R
= 30 V
Reverse recovery time
t
rr
T
J
= 25 °C
T
J
= 125 °C
Peak recovery current
I
RRM
Q
rr
T
J
= 25 °C
T
J
= 125 °C
T
J
= 25 °C
T
J
= 125 °C
I
F
= 30 A
dI
F
/dt = 200 A/μs
V
R
= 200 V
MIN.
-
-
-
-
-
-
-
TYP.
26
26
70
3.5
7.6
50
280
MAX.
-
-
-
-
-
-
-
A
ns
UNITS
Reverse recovery charge
nC
THERMAL - MECHANICAL SPECIFICATIONS
PARAMETER
Maximum junction and storage
temperature range
Thermal resistance,
junction to case
Thermal resistance,
junction to ambient per leg
Thermal resistance,
case to heatsink
Weight
Mounting torque
Marking device
Case style TO-247AD 2L
SYMBOL
T
J
, T
Stg
R
thJC
R
thJA
R
thCS
Typical socket mount
Mounting surface, flat, smooth, and greased
TEST CONDITIONS
MIN.
-55
-
-
-
-
-
1.2
(10)
TYP.
-
0.7
-
0.5
5.5
0.2
-
MAX.
175
1.1
70
-
-
-
2.4
(20)
g
oz.
kgf · cm
(lbf · in)
UNITS
°C
°C/W
EPH3006L
Revision: 03-Mar-17
Document Number: 95780
2
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
VS-EPH3006L-N3
www.vishay.com
Vishay Semiconductors
1000
175 °C
100
150 °C
125 °C
100 °C
1
0.1
0.01
0.001
0.0001
75 °C
50 °C
25 °C
I
F
- Instantaneous Forward Current (A)
1000
Reverse Current - I
R
(μA)
10
100
T
J
= 175 °C
10
T
J
= 150 °C
T
J
= 25 °C
1
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
0
100
200
300
400
500
600
V
FM
- Forward Voltage Drop (V)
Fig. 1 - Typical Forward Voltage Drop Characteristics
Reverse Voltage - V
R
(V)
Fig. 2 - Typical Values of Reverse Current vs. Reverse Voltage
1000
Junction Capacitance - C
T
(pF)
100
10
1
0
100
200
300
400
500
600
Reverse Voltage - V
R
(V)
Fig. 3 - Typical Junction Capacitance vs. Reverse Voltage
10
Thermal Impedance Z
thJC
(°C/W)
1
D = 0.5
D = 0.2
D = 0.1
D = 0.05
0.1
D = 0.02
D = 0.01
Single
Pulse
(Thermal Resistance)
0.01
1E-05
1E-04
1E-03
1E-02
1E-01
1E+00
t
1
, Rectangular Pulse Duration (s)
Fig. 4 - Max. Thermal Impedance Z
thJC
Characteristics
Revision: 03-Mar-17
Document Number: 95780
3
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
VS-EPH3006L-N3
www.vishay.com
90
80
70
60
I
F
= 30 A, 125 °C
Vishay Semiconductors
180
170
Allowable Case Temperature (°C)
160
150
t
rr
(ns)
140
130
120
110
100
90
80
0
10
20
30
40
50
Average Forward Current - I
F(AV)
(A)
50
40
30
20
typical value
10
100
1000
I
F
= 30 A, 25 °C
dI
F
/dt (A/μs)
Fig. 7 - Typical Reverse Recovery Time vs. dI
F
/dt
Fig. 5 - Maximum Allowable Case Temperature vs.
Average Forward Current
80
RMS Limit
Average Power Loss (W)
60
900
800
700
600
Q
rr
(nC)
I
F
= 30 A, 125 °C
500
400
300
200
10
typical value
0
100
I
F
= 30 A, 25 °C
40
20
D = 0.01
D = 0.02
D = 0.05
D = 0.1
D = 0.2
D = 0.5
DC
0
0
5
10
15
20
25
30
35
40
45
Average Forward Current - I
F(AV)
(A)
1000
dI
F
/dt (A/μs)
Fig. 8 - Typical Stored Charge vs. dI
F
/dt
Fig. 6 - Forward Power Loss Characteristics
(3)
I
F
0
t
rr
t
a
t
b
Q
rr
(2)
(4)
I
RRM
0.5 I
RRM
dI
(rec)M
/dt
(5)
0.75 I
RRM
(1)
dI
F
/dt
(1) dI
F
/dt - rate of change of current
through zero crossing
(2) I
RRM
- peak reverse recovery current
(3) t
rr
- reverse recovery time measured
from zero crossing point of negative
going I
F
to point where a line passing
through 0.75 I
RRM
and 0.50 I
RRM
extrapolated to zero current.
(4)
Q
rr
- area under curve defined by t
rr
and I
RRM
Q
rr
=
t
rr
x I
RRM
2
(5) dI
(rec)M
/dt - peak rate of change of
current during t
b
portion of t
rr
Fig. 9 - Reverse Recovery Waveform and Definitions
Revision: 03-Mar-17
Document Number: 95780
4
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
VS-EPH3006L-N3
www.vishay.com
Vishay Semiconductors
ORDERING INFORMATION TABLE
Device code
VS-
1
1
2
3
4
5
-
-
-
-
-
E
2
P
3
H
4
30
5
06
6
L
7
-N3
8
Vishay Semiconductors product
• A = single diode
• E = single diode
P = TO-247
H = hyperfast recovery time
Current code (30 = 30 A)
6
7
8
-
-
-
Voltage code (06 = 600 V)
L = long lead
Environmental digit:
-N3 = halogen-free, RoHS-compliant and totally lead (Pb)-free
ORDERING INFORMATION
(Example)
PREFERRED P/N
VS-EPH3006L-N3
QUANTITY PER TUBE
25
MINIMUM ORDER QUANTITY
500
PACKAGING DESCRIPTION
Antistatic plastic tube
LINKS TO RELATED DOCUMENTS
Dimensions
Part marking information
TO-247AD 2L
TO-247AD 2L
www.vishay.com/doc?95536
www.vishay.com/doc?95648
Revision: 03-Mar-17
Document Number: 95780
5
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
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