电子工程世界电子工程世界电子工程世界

关键词

搜索

型号

搜索

SI7423DN-T1-E3

产品描述漏源电压(Vdss):30V 连续漏极电流(Id)(25°C 时):7.4A 栅源极阈值电压:3V @ 250uA 漏源导通电阻:18mΩ @ 11.7A,10V 最大功率耗散(Ta=25°C):1.5W 类型:P沟道 P沟道,-30V,-7.4A,0.018Ω@-10V
产品类别分立半导体    晶体管   
文件大小531KB,共12页
制造商Vishay(威世)
官网地址http://www.vishay.com
下载文档 详细参数 全文预览

SI7423DN-T1-E3在线购买

供应商 器件名称 价格 最低购买 库存  
SI7423DN-T1-E3 - - 点击查看 点击购买

SI7423DN-T1-E3概述

漏源电压(Vdss):30V 连续漏极电流(Id)(25°C 时):7.4A 栅源极阈值电压:3V @ 250uA 漏源导通电阻:18mΩ @ 11.7A,10V 最大功率耗散(Ta=25°C):1.5W 类型:P沟道 P沟道,-30V,-7.4A,0.018Ω@-10V

SI7423DN-T1-E3规格参数

参数名称属性值
是否无铅不含铅
包装说明SMALL OUTLINE, R-XDSO-C5
针数8
Reach Compliance Codeunknown
ECCN代码EAR99
外壳连接DRAIN
配置SINGLE WITH BUILT-IN DIODE
最小漏源击穿电压30 V
最大漏极电流 (Abs) (ID)7.4 A
最大漏极电流 (ID)7.4 A
最大漏源导通电阻0.018 Ω
FET 技术METAL-OXIDE SEMICONDUCTOR
JESD-30 代码R-XDSO-C5
JESD-609代码e3
湿度敏感等级1
元件数量1
端子数量5
工作模式ENHANCEMENT MODE
最高工作温度150 °C
封装主体材料UNSPECIFIED
封装形状RECTANGULAR
封装形式SMALL OUTLINE
峰值回流温度(摄氏度)260
极性/信道类型P-CHANNEL
最大功率耗散 (Abs)3.8 W
最大脉冲漏极电流 (IDM)30 A
认证状态Not Qualified
表面贴装YES
端子面层Matte Tin (Sn)
端子形式C BEND
端子位置DUAL
处于峰值回流温度下的最长时间40
晶体管应用SWITCHING
晶体管元件材料SILICON
Base Number Matches1

文档预览

下载PDF文档
Si7423DN
Vishay Siliconix
P-Channel 30-V (D-S) MOSFET
PRODUCT SUMMARY
V
DS
(V)
- 30
R
DS(on)
(Ω)
0.018 at V
GS
= - 10 V
0.030 at V
GS
= - 4.5 V
I
D
(A)
- 11.7
- 9.0
FEATURES
Halogen-free According to IEC 61249-2-21
Available
• TrenchFET
®
Power MOSFET
• New PowerPAK
®
Package
- Low Thermal Resistance, R
thJC
- Low 1.07 mm Profile
PowerPAK 1212-8
APPLICATIONS
• Battery Switch
3.30 mm
S
3.30 mm
S
1
2
3
S
S
G
4
G
D
8
7
6
5
D
D
D
Bottom View
Ordering Information:
Si7423DN-T1-E3 (Lead (Pb)-free)
Si7423DN-T1-GE3 (Lead (Pb)-free) and Halogen-free
D
P-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS
T
A
= 25 °C, unless otherwise noted
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (T
J
= 150 °C)
a
Pulsed Drain Current
Continuous Source Current (Diode Conduction)
a
Maximum Power Dissipation
a
Operating Junction and Storage Temperature Range
Soldering Recommendations (Peak Temperature)
b, c
T
A
= 25 °C
T
A
= 85 °C
T
A
= 25 °C
T
A
= 85 °C
Symbol
V
DS
V
GS
I
D
I
DM
I
S
P
D
T
J
, T
stg
- 3.2
3.8
2.0
- 55 to 150
260
- 11.7
- 8.4
- 30
- 1.3
1.5
0.8
W
°C
10 s
Steady State
- 30
± 20
- 7.4
- 5.4
A
Unit
V
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambient
a
Maximum Junction-to-Case
t
10 s
Steady State
Steady State
Symbol
R
thJA
R
thJC
Typical
26
65
1.9
Maximum
33
81
2.4
°C/W
Unit
Notes:
a. Surface Mounted on 1" x 1" FR4 board.
b. See Solder Profile (www.vishay.com/ppg?73257). The PowerPAK 1212-8 is a leadless package. The end of the lead terminal is exposed
copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and
is not required to ensure adequate bottom side solder interconnection.
c. Rework Conditions: manual soldering with a soldering iron is not recommended for leadless components.
Document Number: 72582
S-83051-Rev. C, 29-Dec-08
www.vishay.com
1

 
EEWorld订阅号

 
EEWorld服务号

 
汽车开发圈

 
机器人开发圈

About Us 关于我们 客户服务 联系方式 器件索引 网站地图 最新更新 手机版

站点相关: 大学堂 TI培训 Datasheet 电子工程 索引文件: 1871  1457  1252  1899  1617  15  26  23  20  14 

器件索引   0 1 2 3 4 5 6 7 8 9 A B C D E F G H I J K L M N O P Q R S T U V W X Y Z

北京市海淀区中关村大街18号B座15层1530室 电话:(010)82350740 邮编:100190

电子工程世界版权所有 京B2-20211791 京ICP备10001474号-1 电信业务审批[2006]字第258号函 京公网安备 11010802033920号 Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved