VS-48CTQ060S-M3, VS-48CTQ060-1-M3
www.vishay.com
Vishay Semiconductors
High Performance Schottky Rectifiers, 2 x 20 A
FEATURES
• 150 °C T
J
operation
• Center tap configuration
2
1
3
1
2
3
• Low forward voltage drop
• High frequency operation
• High purity, high temperature epoxy encapsulation for
enhanced mechanical strength and moisture resistance
• Guard ring for enhanced ruggedness and long term
reliability
• Meets MSL level 1, per J-STD-020, LF maximum peak
of 245 °C
• Designed and qualified according to JEDEC
®
-JESD 47
• Material categorization: for definitions of compliance
please see
www.vishay.com/doc?99912
D
2
PAK (TO-263AB)
Base
common
cathode
2
TO-262AA
Base
common
cathode
2
2
1 Common
3
Anode cathode Anode
2
1 Common
3
Anode cathode Anode
DESCRIPTION
This center tap Schottky rectifier series has been optimized
for low reverse leakage at high temperature. The proprietary
barrier technology allows for reliable operation up to 150 °C
junction temperature. Typical applications are in switching
power supplies, converters, freewheeling diodes, and
reverse battery protection.
VS-48CTQ060S-M3
VS-48CTQ060-1-M3
PRIMARY CHARACTERISTICS
I
F(AV)
V
R
V
F
at I
F
I
RM
max.
T
J
max.
E
AS
Package
Circuit configuration
2 x 20 A
60 V
0.58 V
89 mA at 125 °C
150 °C
13 mJ
D
2
PAK (TO-263AB), TO-262AA
Common cathode
MAJOR RATINGS AND CHARACTERISTICS
SYMBOL
I
F(AV)
V
RRM
I
FSM
V
F
T
J
t
p
= 5 μs sine
20 A
pk
, T
J
= 125 °C (per leg)
Range
CHARACTERISTICS
Rectangular waveform
VALUES
40
60
1000
0.58
-55 to +150
UNITS
A
V
A
V
°C
VOLTAGE RATINGS
PARAMETER
Maximum DC reverse voltage
Maximum working peak reverse voltage
SYMBOL
V
R
V
RWM
VS-48CTQ060S-M3
VS-48CTQ060-1-M3
60
UNITS
V
Revision: 27-Oct-17
Document Number: 94944
1
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
VS-48CTQ060S-M3, VS-48CTQ060-1-M3
www.vishay.com
Vishay Semiconductors
ABSOLUTE MAXIMUM RATINGS
PARAMETER
Maximum average
forward current
See fig. 5
per leg
per device
I
F(AV)
50 % duty cycle at T
C
= 111 °C, rectangular waveform
5 μs sine or 3 μs rect. pulse
I
FSM
E
AS
I
AR
10 ms sine or 6 ms rect. pulse
Following any rated load
condition and with rated
V
RRM
applied
SYMBOL
TEST CONDITIONS
VALUES
20
40
1000
260
13
1.50
mJ
A
A
UNITS
Maximum peak one cycle
non-repetitive surge current per leg
See fig. 7
Non-repetitive avalanche energy per leg
Repetitive avalanche current per leg
T
J
= 25 °C, I
AS
= 1.50 A, L = 11.5 mH
Current decaying linearly to zero in 1 μs
Frequency limited by T
J
maximum V
A
= 1.5 x V
R
typical
ELECTRICAL SPECIFICATIONS
PARAMETER
Maximum forward voltage drop per leg
See fig. 1
Maximum reverse leakage
current per leg
See fig. 2
Threshold Voltage
Forward slope resistance
Maximum junction capacitance per leg
Typical series inductance per leg
Maximum voltage rate of change
Note
(1)
Pulse width < 300 μs, duty cycle < 2 %
SYMBOL
20 A
V
FM (1)
40 A
20 A
40 A
I
RM (1)
V
F(TO)
r
t
C
T
L
S
dV/dt
T
J
= 25 °C
T
J
= 125 °C
T
J
=T
J
maximum
V
R
= 5 V
DC
(test signal range 100 kHz to 1 MHz), 25 °C
Measured lead to lead 5 mm from package body
Rated V
R
V
R
= Rated V
R
TEST CONDITIONS
T
J
= 25 °C
T
J
= 125 °C
VALUES
0.61
0.83
0.58
0.75
2
89
0.37
8.26
1220
8.0
10 000
mA
V
m
pF
nH
V/μs
V
UNITS
THERMAL - MECHANICAL SPECIFICATIONS
PARAMETER
Maximum junction and storage
temperature range
Maximum thermal resistance,
junction to case per leg
Maximum thermal resistance,
junction to case per package
Typical thermal resistance,
case to heatsink
Approximate weight
Mounting torque
Marking device
minimum
maximum
Case style D
2
PAK (TO-263AB)
Case style TO-262AA
SYMBOL
T
J
, T
Stg
TEST CONDITIONS
VALUES
-55 to +150
2.0
R
thJC
DC operation
1.0
R
thCS
Mounting surface, smooth and greased
0.50
2
0.07
6 (5)
12 (10)
g
oz.
kgf
cm
(lbf
in)
°C/W
UNITS
°C
48CTQ060S
48CTQ060-1
Revision: 27-Oct-17
Document Number: 94944
2
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
VS-48CTQ060S-M3, VS-48CTQ060-1-M3
www.vishay.com
Vishay Semiconductors
1000
I
F
- Instantaneous Forward Current (A)
1000
I
R
- Reverse Current (mA)
100
10
1
0.1
T
J
= 150 °C
T
J
= 125 °C
T
J
= 100 °C
T
J
= 75 °C
T
J
= 50 °C
T
J
= 25 °C
100
T
J
= 150 °C
T
J
= 125 °C
T
J
= 25 °C
10
0.01
0.001
1
0
0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2
0
10
20
30
40
50
60
V
FM
- Forward Voltage Drop (V)
Fig. 1 - Maximum Forward Voltage Drop Characteristics
(Per Leg)
V
R
- Reverse Voltage (V)
Fig. 2 - Typical Values of Reverse Current vs.
Reverse Voltage (Per Leg)
10 000
C
T
- Junction Capacitance (pF)
1000
T
J
= 25 °C
100
0
10
20
30
40
50
60
V
R
- Reverse Voltage (V)
Fig. 3 - Typical Junction Capacitance vs. Reverse Voltage (Per Leg)
Z
thJC
- Thermal Impedance (°C/W)
10
1
P
DM
t
1
t
2
0.1
Single pulse
(thermal resistance)
0.01
0.00001
D = 0.75
D = 0.50
D = 0.33
D = 0.25
D = 0.20
Notes:
1. Duty factor D = t
1
/t
2
2. Peak T
J
= P
DM
x Z
thJC
+ T
C
0.1
1
10
100
0.0001
0.001
0.01
t
1
- Rectangular Pulse Duration (s)
Fig. 4 - Maximum Thermal Impedance Z
thJC
Characteristics (Per Leg)
Revision: 27-Oct-17
Document Number: 94944
3
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
VS-48CTQ060S-M3, VS-48CTQ060-1-M3
www.vishay.com
Vishay Semiconductors
20
D = 0.20
D = 0.25
D = 0.33
D = 0.50
D = 0.75
RMS limit
Allowable Case Temperature (°C)
150
Average Power Loss (W)
140
DC
130
120
110
100
15
10
DC
Square wave (D = 0.50)
80 % rated V
R
applied
5
See note (1)
90
0
0
5
10
15
20
25
30
0
5
10
15
20
25
30
I
F(AV)
- Average Forward Current (A)
Fig. 5 - Maximum Allowable Case Temperature vs.
Average Forward Current (Per Leg)
I
F(AV)
- Average Forward Current (A)
Fig. 6 - Forward Power Loss Characteristics
(Per Leg)
I
FSM
- Non-Repetitive Surge Current (A)
1000
At any rated load condition
and with rated V
RRM
applied
following surge
100
10
100
1000
10 000
t
p
- Square Wave Pulse Duration (µs)
Fig. 7 - Maximum Non-Repetitive Surge Current (Per Leg)
L
High-speed
switch
Freewheel
diode
40HFL40S02
+ V
d
= 25 V
D.U.T.
IRFP460
R
g
= 25
Ω
Current
monitor
Fig. 8 - Unclamped Inductive Test Circuit
Note
Formula used: T
C
= T
J
- (Pd + Pd
REV
) x R
thJC
;
Pd = forward power loss = I
F(AV)
x V
FM
at (I
F(AV)
/D) (see fig. 6);
Pd
REV
= inverse power loss = V
R1
x I
R
(1 - D); I
R
at V
R1
= 10 V
(1)
Revision: 27-Oct-17
Document Number: 94944
4
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
VS-48CTQ060S-M3, VS-48CTQ060-1-M3
www.vishay.com
ORDERING INFORMATION TABLE
Device code
Vishay Semiconductors
VS-
1
1
2
3
4
5
6
7
8
-
-
-
-
-
-
-
-
48
2
C
3
T
4
Q
5
060
6
S
7
TRL -M3
8
9
Vishay
Semiconductors
product
Current rating (40 A)
Circuit configuration: C = common cathode
T = TO-220
Schottky
“Q”
series
Voltage rating (060 = 60 V)
S
= D
2
PAK (TO-263AB)
-1 = TO-262AA
None = tube
TRL = tape and reel (left oriented - for D
2
PAK (TO-263AB) only)
TRR = tape and reel (right oriented - for D
2
PAK (TO-263AB) only)
9
-
-M3 = halogen-free, RoHS-compliant, and termination lead (Pb)-free
ORDERING INFORMATION
PREFERRED P/N
VS-48CTQ060S-M3
VS-48CTQ060STRR-M3
VS-48CTQ060STRL-M3
VS-48CTQ060-1-M3
QUANTITY PER T/R
50
800
800
50
MINIMUM ORDER QUANTITY
1000
800
800
1000
PACKAGING DESCRIPTION
Antistatic plastic tubes
13" diameter reel
13" diameter reel
Antistatic plastic tubes
LINKS TO RELATED DOCUMENTS
Dimensions
Part marking information
Packaging information
D
2
PAK
(TO-263AB)
TO-262AA
D
2
PAK (TO-263AB)
TO-262AA
www.vishay.com/doc?96164
www.vishay.com/doc?96165
www.vishay.com/doc?95444
www.vishay.com/doc?95443
www.vishay.com/doc?96424
Revision: 27-Oct-17
Document Number: 94944
5
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
京公网安备 11010802033920号
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved
电子工程世界
