VS-60EPU06-N3, VS-60APU06-N3
www.vishay.com
Vishay Semiconductors
Ultrafast Soft Recovery Diode, 60 A FRED Pt
®
FEATURES
• Ultrafast recovery time
• Low forward voltage drop
1
1
2
2
3
• 175 °C operating junction temperature
TO-247AC
3L
Base
common
cathode
2
TO-247AC 2L
Base
common
cathode
2
• Designed and qualified
JEDEC
®
-JESD 47
according
to
• Material categorization: for definitions of compliance
please see
www.vishay.com/doc?99912
BENEFITS
• Reduced RFI and EMI
• Higher frequency operation
• Reduced snubbing
1
Cathode
3
Anode
Anode
1
Anode
3
• Reduced parts count
VS-60EPU06-N3
VS-60APU06-N3
DESCRIPTION / APPLICATIONS
These diodes are optimized to reduce losses and EMI/RFI in
high frequency power conditioning systems.
The softness of the recovery eliminates the need for a
snubber in most applications. These devices are ideally
suited for HF welding, power converters and other
applications where switching losses are not significant
portion of the total losses.
PRIMARY CHARACTERISTICS
I
F(AV)
V
R
V
F
at I
F
t
rr
typ.
T
J
max.
Package
Circuit configuration
60 A
600 V
1.11 V
See Recovery table
175 °C
TO-247AC 2L, TO-247AC 3L
Single
ABSOLUTE MAXIMUM RATINGS
PARAMETER
Cathode to anode voltage
Continuous forward current
Single pulse forward current
Maximum repetitive forward current
Operating junction and storage temperatures
SYMBOL
V
R
I
F(AV)
I
FSM
I
FRM
T
J
, T
Stg
T
C
= 116 °C
T
C
= 25 °C, t
p
= 10 ms
Square wave, 20 kHz
TEST CONDITIONS
MAX.
600
60
600
120
-55 to +175
°C
A
UNITS
V
ELECTRICAL SPECIFICATIONS
(T
J
= 25 °C unless otherwise specified)
PARAMETER
Breakdown voltage,
blocking voltage
Forward voltage
SYMBOL
V
BR
,
V
R
V
F
TEST CONDITIONS
I
R
= 100 μA
I
F
= 60 A
I
F
= 60 A, T
J
= 125 °C
I
F
= 60 A, T
J
= 175 °C
Reverse leakage current
Junction capacitance
I
R
C
T
V
R
= V
R
rated
T
J
= 150 °C, V
R
= V
R
rated
V
R
= 600 V
MIN.
600
-
-
-
-
-
-
TYP.
-
1.35
1.20
1.11
-
-
39
MAX.
-
1.68
1.42
1.30
50
500
-
μA
pF
V
UNITS
Revision: 19-Sep-2019
Document Number: 94023
1
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
VS-60EPU06-N3, VS-60APU06-N3
www.vishay.com
Vishay Semiconductors
DYNAMIC RECOVERY CHARACTERISTICS
(T
J
= 25 °C unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
I
F
= 1 A, di
F
/dt = 200 A/μs, V
R
= 30 V
Reverse recovery time
t
rr
T
J
= 25 °C
T
J
= 125 °C
Peak recovery current
I
RRM
Q
rr
T
J
= 25 °C
T
J
= 125 °C
T
J
= 25 °C
T
J
= 125 °C
I
F
= 60 A
di
F
/dt = 200 A/μs
V
R
= 200 V
MIN.
-
-
-
-
-
-
-
TYP.
34
81
164
7.4
17.0
300
1394
MAX.
45
-
-
-
-
-
-
A
ns
UNITS
Reverse recovery charge
nC
THERMAL - MECHANICAL SPECIFICATIONS
PARAMETER
Thermal resistance,
junction to case
Thermal resistance,
junction to ambient per leg
Thermal resistance,
case to heatsink
Weight
SYMBOL
R
thJC
R
thJA
R
thCS
Typical socket mount
Mounting surface, flat, smooth,
and greased
TEST CONDITIONS
MIN.
-
-
-
-
-
1.2
10
Case style TO-247AC 2L
Case style TO-247AC 3L
TYP.
-
-
0.2
5.5
0.2
-
-
60EPU06
60APU06
MAX.
0.63
40
-
-
-
2.4
20
UNITS
K/W
°C/W
K/W
g
oz.
N
m
lbf
in
Mounting torque
Marking device
1000
1000
I
R
- Reverse Current (µA)
100
10
I
F
- Instantaneous
Forward Current (A)
T
J
= 175 °C
100
T
J
= 125 °C
1
0.1
0.01
0.001
10
T
J
= 175 °C
T
J
= 125 °C
T
J
= 25 °C
T
J
= 25 °C
1
0
0.5
1.0
1.5
2.0
2.5
3.0
0
100
200
300
400
500
600
V
F
- Forward Voltage Drop (V)
Fig. 1 - Typical Forward Voltage Drop Characteristics
V
R
- Reverse Voltage (V)
Fig. 2 - Typical Values of Reverse Current vs.
Reverse Voltage
Revision: 19-Sep-2019
Document Number: 94023
2
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
VS-60EPU06-N3, VS-60APU06-N3
www.vishay.com
Vishay Semiconductors
1000
C
T
- Junction Capacitance (pF)
100
T
J
= 25 °C
10
0
100
200
300
400
500
600
V
R
- Reverse Voltage (V)
Fig. 3 - Typical Junction Capacitance vs. Reverse Voltage
1
0.7
0.5
0.3
0.1
0.1
R
1
R
2
τ
2
R
3
τ
3
T
C
Z
thJC
- Thermal Impedance (°C/W)
Ri (°C/W)
0.06226
0.32503
0.24271
τi
(s)
0.00049
0.01294
0.24310
0.05
T
J
τ
1
Ci =
τi/Ri
Notes:
1. Duty factor D = t
on
/period
2. Peak T
J
= P
DM
x Z
thJC
+ T
C
1
0.01
0.00001
0.0001
0.001
0.01
0.1
10
100
t
on
- Rectangular Pulse Duration (s)
Fig. 4 - Maximum Thermal Impedance Z
thJC
Characteristics
180
140
Allowable Case Temperature (°C)
DC
140
120
100
80
See note (1)
60
0
20
40
60
80
100
Square wave (D = 0.50)
80 % rated V
R
applied
Average Power Loss (W)
160
120
100
80
60
40
20
0
0
20
40
60
80
100
DC
RMS limit
D = 0.01
D = 0.02
D = 0.05
D = 0.10
D = 0.20
D = 0.50
I
F(AV)
- Average Forward Current (A)
Fig. 5 - Maximum Allowable Case Temperature vs.
Average Forward Current
Note
(1)
Formula used: T = T - (Pd + Pd
C
J
REV
) x R
thJC
;
Pd = forward power loss = I
F(AV)
x V
FM
at (I
F(AV)
/D) (see fig. 6);
Pd
REV
= inverse power loss = V
R1
x I
R
(1 - D); I
R
at V
R1
= 80 % rated V
R
I
F(AV)
- Average Forward Current (A)
Fig. 6 - Forward Power Loss Characteristics
Revision: 19-Sep-2019
Document Number: 94023
3
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
VS-60EPU06-N3, VS-60APU06-N3
www.vishay.com
Vishay Semiconductors
3000
2500
I
F
= 30 A
I
F
= 60 A
2000
T
J
= 125 °C
T
J
= 25 °C
300
T
J
= 125 °C
T
J
= 25 °C
250
Q
rr
(nC)
t
rr
(ns)
200
I
F
= 30 A
I
F
= 60 A
1500
1000
150
100
500
0
10
100
1000
10
100
1000
50
di
F
/dt (A/µs)
Fig. 7 - Typical Reverse Recovery Time vs. di
F
/dt
di
F
/dt (A/µs)
Fig. 8 - Typical Stored Charge vs. di
F
/dt
(3)
I
F
0
t
rr
t
a
t
b
Q
rr
(2)
(4)
I
RRM
0.5 I
RRM
di
(rec)M
/dt
(5)
0.75 I
RRM
(1)
di
F
/dt
(1) di
F
/dt - rate of change of current
through zero crossing
(2) I
RRM
- peak reverse recovery current
(3) t
rr
- reverse recovery time measured
from zero crossing point of negative
going I
F
to point where a line passing
through 0.75 I
RRM
and 0.50 I
RRM
extrapolated to zero current.
(4)
Q
rr
- area under curve defined by t
rr
and I
RRM
Q
rr
=
t
rr
x I
RRM
2
(5) di
(rec)M
/dt - peak rate of change of
current during t
b
portion of t
rr
Fig. 9 - Reverse Recovery Waveform and Definitions
Revision: 19-Sep-2019
Document Number: 94023
4
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
VS-60EPU06-N3, VS-60APU06-N3
www.vishay.com
ORDERING INFORMATION TABLE
Device code
Vishay Semiconductors
VS-
1
1
2
3
-
-
-
60
2
E
3
P
4
U
5
06
6
-N3
7
Vishay Semiconductors product
Current rating (60 = 60 A)
Circuit configuration:
E = single diode, 2 pins
A = single diode, 3 pins
4
5
6
7
-
Package:
P = TO-247AC
-
Type of silicon:
U = ultrafast recovery
-
-
Voltage rating (06 = 600 V)
Environmental digit:
-N3 = halogen-free, RoHS-compliant, and totally lead (Pb)-free
ORDERING INFORMATION
(Example)
PREFERRED P/N
VS-60EPU06-N3
VS-60APU06-N3
QUANTITY PER T/R
25
25
MINIMUM ORDER QUANTITY
500
500
PACKAGING DESCRIPTION
Antistatic plastic tube
Antistatic plastic tube
LINKS TO RELATED DOCUMENTS
Dimensions
TO-247AC 2L
TO-247AC 3L
TO-247AC 2L
TO-247AC 3L
www.vishay.com/doc?96144
www.vishay.com/doc?96138
www.vishay.com/doc?95648
www.vishay.com/doc?95007
Part marking information
Revision: 19-Sep-2019
Document Number: 94023
5
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
嵌入式系统
京公网安备 11010802033920号
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved
电子工程世界
