• Material categorization: For definitions of compliance
please see
www.vishay.com/doc?99912
APPLICATIONS
3
4
S
8
7
6
5
1.
m
9m
• Portable Devices such as Smart Phones,
Tablet PCs and Mobile Computing
- Battery Switch
- Load Switch
- Power Management
Marking Code
LB
XXX
Lot Traceability
and Date Code
G
Bottom View
Ordering Information:
Si5411EDU-T1-GE3 (Lead (Pb)-free and Halogen-free)
D
P-Channel MOSFET
Part # Code
ABSOLUTE MAXIMUM RATINGS
(T
C
= 25 °C, unless otherwise noted)
Parameter
Drain-Source Voltage
Gate-Source Voltage
T
C
= 25 °C
Continuous Drain Current (T
J
= 150 °C)
T
C
= 70 °C
T
A
= 25 °C
T
A
= 70 °C
Pulsed Drain Current (t = 100 μs)
Continuous Source-Drain Diode Current
Single Avalanche Current
Single Avalanche Energy
T
C
= 25 °C
T
A
= 25 °C
L = 0.1 mH
T
C
= 25 °C
Maximum Power Dissipation
T
C
= 70 °C
T
A
= 25 °C
T
A
= 70 °C
Operating Junction and Storage Temperature Range
Soldering Recommendations (Peak Temperature)
d, e
T
J
, T
stg
P
D
I
DM
I
S
I
AS
E
AS
I
D
Symbol
V
DS
V
GS
Limit
- 12
±8
- 25
a
- 25
a
- 16.5
b, c
- 13
b, c
- 140
- 25
a
- 2.6
b, c
- 15
11
31
20
3.1
b, c
2
b, c
- 50 to 150
260
°C
W
mJ
A
Unit
V
THERMAL RESISTANCE RATINGS
Parameter
Maximum
Junction-to-Ambient
b, f
t
5s
Steady State
Maximum Junction-to-Case (Drain)
Symbol
R
thJA
R
thJC
Typical
34
3
Maximum
40
4
Unit
°C/W
Notes
a. Package limited.
b. Surface mounted on 1" x 1" FR4 board.
c. t = 5 s.
d. See solder profile (www.vishay.com/doc?73257). The PowerPAK ChipFET is a leadless package. The end of the lead terminal is exposed
copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed
and is not required to ensure adequate bottom side solder interconnection.
e. Rework conditions: manual soldering with a soldering iron is not recommended for leadless components.
f. Maximum under steady state conditions is 90 °C/W.
S13-1662-Rev. A, 29-Jul-13
Document Number: 62879
1
For technical questions, contact:
pmostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
Si5411EDU
www.vishay.com
Vishay Siliconix
SPECIFICATIONS
(T
J
= 25 °C, unless otherwise noted)
Parameter
Static
Drain-Source Breakdown Voltage
V
DS
Temperature Coefficient
V
GS(th)
Temperature Coefficient
Gate-Source Threshold Voltage
Gate-Source Leakage
Zero Gate Voltage Drain Current
On-State Drain
Current
a
V
DS
V
DS
/T
J
V
GS(th)
/T
J
V
GS(th)
I
GSS
I
DSS
I
D(on)
V
GS
= 0 V, I
D
= - 250 μA
I
D
= - 250 μA
V
DS
= V
GS
, I
D
= - 250 μA
V
DS
= 0 V, V
GS
= ± 8 V
V
DS
= 0 V, V
GS
= ± 4.5 V
V
DS
= - 12 V, V
GS
= 0 V
V
DS
= - 12 V, V
GS
= 0 V, T
J
= 55 °C
V
DS
- 5 V, V
GS
= - 4.5 V
V
GS
= - 4.5 V, I
D
= - 6 A
Drain-Source On-State Resistance
a
R
DS(on)
V
GS
= - 3.7 V, I
D
= - 5 A
V
GS
= - 2.5 V, I
D
= - 5 A
V
GS
= - 1.8 V, I
D
= - 2 A
Forward Transconductance
a
Dynamic
b
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Gate Resistance
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Drain-Source Body Diode Characteristics
Continuous Source-Drain Diode Current
Pulse Diode Forward Current (100 μs)
Body Diode Voltage
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
Reverse Recovery Fall Time
Reverse Recovery Rise Time
I
S
I
SM
V
SD
t
rr
Q
rr
t
a
t
b
I
F
= - 10 A, dI/dt = 100 A/μs, T
J
= 25 °C
I
S
= - 10 A, V
GS
= 0 V
- 0.8
45
35
17
28
T
C
= 25 °C
- 25
- 140
- 1.2
90
70
A
V
ns
nC
ns
C
iss
C
oss
C
rss
Q
g
Q
gs
Q
gd
R
g
t
d(on)
t
r
t
d(off)
t
f
t
d(on)
t
r
t
d(off)
t
f
V
DD
= - 6 V, R
L
= 0.6
I
D
- 10 A, V
GEN
= - 8 V, R
g
= 1
V
DD
= - 6 V, R
L
= 0.6
I
D
- 10 A, V
GEN
= - 4.5 V, R
g
= 1
f = 1 MHz
0.7
V
DS
= - 6 V, V
GS
= - 8 V, I
D
= - 15 A
V
DS
= - 6 V, V
GS
= - 4.5 V, I
D
= - 15 A
V
DS
= - 6 V, V
GS
= 0 V, f = 1 MHz
4100
860
870
70
43
5.5
10.5
3.6
30
30
70
35
12
5
80
25
7.2
60
60
140
70
25
10
160
50
ns
105
65
nC
pF
g
fs
V
GS
= - 6 V, I
D
= - 6 A
- 10
0.0066
0.0073
0.0095
0.0155
45
0.0082
0.0094
0.0117
0.0206
S
- 0.4
- 12
-5
1.8
- 0.9
±2
± 0.2
-1
- 10
A
μA
V
mV/°C
V
Symbol
Test Conditions
Min.
Typ.
Max.
Unit
Notes
a. Pulse test; pulse width
300 μs, duty cycle
2 %.
b. Guaranteed by design, not subject to production testing.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
S13-1662-Rev. A, 29-Jul-13
Document Number: 62879
2
For technical questions, contact:
pmostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
Si5411EDU
www.vishay.com
TYPICAL CHARACTERISTICS
(25 °C, unless otherwise noted)
20.00
20
Vishay Siliconix
16.00
16
I
GSS
-
Gate
Current (mA)
12.00
I
D
- Drain Current (A)
T
J
= 25
°C
12
8.00
8
T
C
= 25
°C
4
T
C
= 125
°C
T
C
= - 55
°C
4.00
0.00
0
4
8
12
16
0
0.0
0.3
0.6
0.9
1.2
1.5
V
GS
-
Gate-Source
Voltage (V)
V
GS
-
Gate-to-Source
Voltage (V)
Gate Current vs. Gate-Source Voltage
Transfer Characteristics
10
-2
10
-3
0.050
V
GS
= 1.8 V
0.040
R
DS(on)
- On-Resistance (Ω)
I
GSS
-
Gate
Current (A)
10
-4
10
-5
10
-6
10
-7
10
-8
10
-9
T
J
= 150
°C
0.030
0.020
T
J
= 25
°C
V
GS
= 2.5 V
0.010
V
GS
= 3.7 V
V
GS
= 4.5 V
0.000
0
4
8
12
16
0
20
40
60
80
100
V
GS
-
Gate-to-Source
Voltage (V)
I
D
- Drain Current (A)
Gate Current vs. Gate-Source Voltage
On-Resistance vs. Drain Current and Gate Voltage
100
V
GS
= 5 V thru 3 V
80
I
D
- Drain Current (A)
C - Capacitance (pF)
6000
V
GS
= 2.5 V
5000
C
iss
4000
60
V
GS
= 2 V
40
3000
C
oss
2000
C
rss
20
V
GS
= 1.5 V
0
0.0
0.5
1.0
1.5
2.0
2.5
3.0
V
DS
- Drain-to-Source Voltage (V)
1000
0
0
2
4
6
8
10
12
V
DS
- Drain-to-Source Voltage (V)
Output Characteristics
S13-1662-Rev. A, 29-Jul-13
Capacitance
Document Number: 62879
3
For technical questions, contact:
pmostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
Si5411EDU
www.vishay.com
TYPICAL CHARACTERISTICS
(25 °C, unless otherwise noted)
8
0.050
Vishay Siliconix
V
GS
-
Gate-to-Source
Voltage (V)
I
D
= 15 A
6
R
DS(on)
- On-Resistance (Ω)
V
DS
= 6 V
0.040
I
D
= 6 A
V
DS
= 3 V
4
V
DS
= 9.6 V
2
0.030
0.020
T
J
= 125
°C
0.010
T
J
= 25
°C
0
0
20
40
60
80
Q
g
- Total
Gate
Charge (nC)
0.000
0
1
2
3
4
5
V
GS
-
Gate-to-Source
Voltage (V)
Gate Charge
On-Resistance vs. Gate-to-Source Voltage
1.5
R
DS(on)
- On-Resistance (Normalized)
1.4
1.3
1.2
1.1
1.0
0.9
0.8
0.7
- 50
- 25
0
25
50
75
100
125
150
0.60
V
GS
= 4.5 V;
I
D
=
6A
V
GS
= 3.7 V; I
D
= 5A
V
GS
= 2.5 V; I
D
= 5A
V
GS(th)
(V)
0.55
0.50
0.45
0.40
V
GS
= 1.8 V; I
D
= 2 A
I
D
= 250 μA
0.35
0.30
0.25
0.20
- 50
- 25
0
25
50
75
100
125
150
T
J
- Junction Temperature (°C)
T
J
- Temperature (°C)
On-Resistance vs. Junction Temperature
Threshold Voltage
100
50
T
J
= 150
°C
I
S
-
Source
Current (A)
40
10
Power (W)
30
T
J
= 25
°C
20
1
10
0.1
0.0
0.2
0.4
0.6
0.8
1.0
1.2
V
SD
-
Source-to-Drain
Voltage (V)
0
0.001
0.01
0.1
1
Time (s)
10
100
1000
Soure-Drain Diode Forward Voltage
S13-1662-Rev. A, 29-Jul-13
Single Pulse Power, Junction-to-Ambient
Document Number: 62879
4
For technical questions, contact:
pmostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
Si5411EDU
www.vishay.com
TYPICAL CHARACTERISTICS
(25 °C, unless otherwise noted)
1000
Limited by R
DS(on)
*
100
I
D
- Drain Current (A)
100
µs
10
1 ms
10 ms
1
100 ms
10
s
1
s
DC
BVDSS Limited
0.01
0.1
1
10
100
V
DS
- Drain-to-Source Voltage (V)
* V
GS
> minimum V
GS
at which R
DS(on)
is
specified
Vishay Siliconix
0.1
T
A
= 25
°C
Safe Operating Area, Junction-to-Ambient
60
35
30
Power Dissipation (W)
25
20
15
10
5
0
50
I
D
- Drain Current (A)
40
30
Package Limited
20
10
0
0
25
50
75
100
125
150
T
C
- Case Temperature (°C)
25
50
75
100
125
150
T
C
- Case Temperature (°C)
Current Derating*
Power Derating
* The power dissipation P
D
is based on T
J(max.)
= 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper
dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the
package limit.
S13-1662-Rev. A, 29-Jul-13
Document Number: 62879
5
For technical questions, contact:
pmostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
据外媒报道，萨里大学（University of Surrey）的研究人员开发出一种无需依赖GPS即可在人口密集的城市地区精确定位设备位置的人工智能系统。该系统可将定位误差从734米缩小到22米以内，这对于自动驾驶汽车和救援车辆等技术的发展意义重大。 图片来源： 萨里大学 在发表于《IEEE Robotics and Automation Letters》的论文中，研究人员介绍了PEn...[详细]
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