Si5902BDC-T1-GE3 (Lead (Pb)-free and Halogen-free)
ABSOLUTE MAXIMUM RATINGS
T
A
= 25 °C, unless otherwise noted
Parameter
Drain-Source Voltage
Gate-Source Voltage
T
C
= 25 °C
T
C
= 85 °C
T
A
= 25 °C
T
A
= 85 °C
T
C
= 25 °C
T
A
= 25 °C
T
C
= 25 °C
T
C
= 85 °C
T
A
= 25 °C
T
A
= 85 °C
d, e
Symbol
V
DS
V
GS
I
D
I
DM
I
S
Limit
30
± 20
4
a
3.8
a
3.7
b, c
2.6
b, c
10
2.6
1.3
b, c
3.12
2.0
1.5
b, c
0.8
b, c
- 55 to 150
260
Unit
V
Continuous Drain Current (T
J
= 150 °C)
A
Pulsed Drain Current
Continuous Source-Drain Diode Current
Maximum Power Dissipation
P
D
T
J
, T
stg
W
Operating Junction and Storage Temperature Range
Soldering Recommendations (Peak Temperature)
°C
THERMAL RESISTANCE RATINGS
Parameter
Symbol
Typical
Maximum
Unit
b, f
R
thJA
t
≤
5s
70
85
Maximum Junction-to-Ambient
°C/W
33
40
Maximum Junction-to-Foot (Drain)
Steady State
R
thJF
Notes:
a. Package limited.
b. Surface mounted on 1" x 1" FR4 board.
c. t = 5 s.
d. See Solder Profile (www.vishay.com/ppg?73257). The 1206-8 ChipFET is a leadless package. The end of the lead terminal is exposed copper
(not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not
required to ensure adequate bottom side solder interconnection.
e. Rework conditions: manual soldering with a soldering iron is not recommended for leadless components.
f. Maximum under steady state conditions is 120 °C/W.
Document Number: 70415
S10-0548-Rev. B, 08-Mar-10
www.vishay.com
1
Si5902BDC
Vishay Siliconix
SPECIFICATIONS
T
J
= 25 °C, unless otherwise noted
Parameter
Static
Drain-Source Breakdown Voltage
V
DS
Temperature Coefficient
V
GS(th)
Temperature Coefficient
Gate-Source Threshold Voltage
Gate-Source Leakage
Zero Gate Voltage Drain Current
On-State Drain Current
a
Drain-Source On-State Resistance
a
Forward Transconductance
a
Dynamic
b
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Gate Resistance
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Drain-Source Body Diode Characteristics
Continuous Source-Drain Diode Current
Pulse Diode Forward Current
Body Diode Voltage
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
Reverse Recovery Fall Time
Reverse Recovery Rise Time
I
S
I
SM
V
SD
t
rr
Q
rr
t
a
t
b
I
F
= 2.6 A, dI/dt = 100 A/µs, T
J
= 25 °C
I
S
= 2.6 A, V
GS
= 0 V
0.8
30
20
23
7
T
C
= 25 °C
2.6
10
1.2
50
40
A
V
ns
nC
ns
C
iss
C
oss
C
rss
Q
g
Q
gs
Q
gd
R
g
t
d(on)
t
r
t
d(off)
t
f
t
d(on)
t
r
t
d(off)
t
f
V
DD
= 15 V, R
L
= 5.8
Ω
I
D
≅
2.6 A, V
GEN
= 10 V, R
g
= 1
Ω
V
DD
= 15 V, R
L
= 5.8
Ω
I
D
≅
2.6 A, V
GEN
= 4.5 V, R
g
= 1
Ω
f = 1 MHz
V
DS
= 15 V, V
GS
= 10 V, I
D
= 3.6 A
V
DS
= 15 V, V
GS
= 4.5 V, I
D
= 3.6 A
V
DS
= 15 V, V
GS
= 0 V, f = 1 MHz
220
50
25
4.5
2
0.7
0.7
3
15
80
12
25
4
12
10
5
25
120
20
40
8
20
15
10
ns
Ω
7
3
nC
pF
V
DS
ΔV
DS
/T
J
ΔV
GS(th)
/T
J
V
GS(th)
I
GSS
I
DSS
I
D(on)
R
DS(on)
g
fs
V
GS
= 0 V, I
D
= 250 µA
I
D
= 250 µA
V
DS
= V
GS
, I
D
= 250 µA
V
DS
= 0 V, V
GS
= ± 20 V
V
DS
= 30 V, V
GS
= 0 V
V
DS
= 30 V, V
GS
= 0 V, T
J
= 85 °C
V
DS
≥
5 V, V
GS
= 10 V
V
GS
= 10 V, I
D
= 3.1 A
V
GS
= 4.5 V, I
D
= 1 A
V
DS
= 15 V, I
D
= 3.1 A
10
0.053
0.081
5
0.065
0.100
1.5
30
27
-5
3
± 100
1
5
V
mV/°C
V
nA
µA
A
Ω
S
Symbol
Test Conditions
Min.
Typ.
Max.
Unit
Notes:
a. Pulse test; pulse width
≤
300 µs, duty cycle
≤
2 %.
b. Guaranteed by design, not subject to production testing.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
www.vishay.com
2
Document Number: 70415
S10-0548-Rev. B, 08-Mar-10
Si5902BDC
Vishay Siliconix
TYPICAL CHARACTERISTICS
25 °C, unless otherwise noted
20
5
16
I
D
- Drain Current (A)
V
GS
= 10
V
thru 6
V
5
V
I
D
- Drain Current (A)
4
12
3
T
C
= 25 °C
2
T
C
= 125 °C
1
8
4
V
4
3
V
0
0.0
0.5
1.0
1.5
2.0
2.5
0
0.0
T
C
= - 55 °C
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
V
DS
- Drain-to-Source
Voltage
(V)
V
GS
- Gate-to-Source
Voltage
(V)
Output Characteristics
0.20
300
Transfer Characteristics
R
DS(on)
- On-Resistance (Ω)
0.16
C - Capacitance (pF)
250
C
iss
200
0.12
V
GS
= 4.5
V
150
0.08
V
GS
= 10
V
0.04
100
C
oss
50
C
rss
0
5
10
15
20
25
30
0.00
0
5
10
I
D
- Drain Current (A)
15
20
0
V
DS
- Drain-to-Source
Voltage
(V)
On Resistance vs. Drain Current
10
V
DS
= 15
V,
I
D
= 3.6 A
V
GS
- Gate-to-Source
Voltage
(V)
8
R
DS(on)
- On-Resistance
1.6
1.8
Capacitance
V
GS
= 10
V,
4.5
V
I
D
= 3.1 A
1.4
(Normalized)
6
1.2
4
V
DS
= 24
V,
I
D
= 3.6 A
1.0
2
0.8
0
0
1
2
3
4
5
Q
g
- Total Gate Charge (nC)
0.6
- 50
- 25
0
25
50
75
100
125
150
T
J
- Junction Temperature (°C)
Gate Charge
Document Number: 70415
S10-0548-Rev. B, 08-Mar-10
On-Resistance vs. Junction Temperature
www.vishay.com
3
Si5902BDC
Vishay Siliconix
TYPICAL CHARACTERISTICS
25 °C, unless otherwise noted
10
0.20
I
D
= 3.1 A
R
DS(on)
- On-Resistance (Ω)
0.16
I
S
- Source Current (A)
0.12
25 °C
T
J
= 150 °C
T
J
= 25 °C
0.08
125 °C
1
0.0
0.2
0.4
0.6
0.8
1.0
1.2
V
SD
- So
u
rce-to-Drain
V
oltage (
V
)
0.04
0
2
4
6
8
10
V
GS
- Gate-to-Source
Voltage
(V)
Forward Diode Voltage vs. Temperature
2.4
50
R
DS(on)
vs. V
GS
vs. Temperature
2.2
I
D
= 250
µA
2.0
V
GS(th)
(V)
Power (W)
40
30
1.8
20
1.6
10
1.4
1.2
- 50
- 25
0
25
50
75
100
125
150
0
0.0001 0.001
0.01
0.1
1
10
100
1000
T
J
- Temperature (°C)
Time (s)
Threshold Voltage
10
Limited
by
R
DS(on)
*
100
µs
Single Pulse Power
I
D
- Drain Current (A)
1
1 ms
10 ms
0.1
T
A
= 25 °C
Single Pulse
BVDSS
Limited
0.01
0.01
*
V
GS
0.1
1
10
100
100 ms
1 s, 10 s
DC
V
DS
- Drain-to-Source
Voltage
(V)
minimum
V
GS
at
which
R
DS(on)
is specified
Safe Operating Area, Junction-to-Ambient
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4
Document Number: 70415
S10-0548-Rev. B, 08-Mar-10
Si5902BDC
Vishay Siliconix
TYPICAL CHARACTERISTICS
25 °C, unless otherwise noted
6
4
5
3
4
Package Limited
3
Power Dissipation (W)
I
D
- Drain Current (A)
2
2
1
1
0
0
25
50
75
100
125
150
0
25
50
75
100
125
150
T
C
- Case Temperature (°C)
T
C
- Case Temperature (°C)
Current Derating*
Power Derating
* The power dissipation P
D
is based on T
J(max)
= 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper
dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package
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