VS-60EPU06PbF, VS-60EPU06-N3, VS-60APU06PbF, VS-60APU06-N3
www.vishay.com
Vishay Semiconductors
Ultrafast Soft Recovery Diode, 60 A FRED Pt
®
FEATURES
• Ultrafast recovery time
• Low forward voltage drop
• 175 °C operating junction temperature
TO-247AC modified
Cathode
to base
2
TO-247AC
Cathode
to base
2
• Designed and qualified
JEDEC
®
-JESD47
according
to
• Material categorization:
for definitions of compliance please see
www.vishay.com/doc?99912
Available
BENEFITS
• Reduced RFI and EMI
1
Cathode
3
Anode
1
Anode
3
Anode
• Higher frequency operation
• Reduced snubbing
• Reduced parts count
VS-60EPU06PbF
VS-60EPU06-N3
VS-60APU06PbF
VS-60APU06-N3
DESCRIPTION / APPLICATIONS
PRODUCT SUMMARY
Package
I
F(AV)
V
R
V
F
at I
F
t
rr
typ.
T
J
max.
Diode variation
TO-247AC modified (2 pins),
TO-247AC
60 A
600 V
1.11 V
See Recovery table
175 °C
Single die
These diodes are optimized to reduce losses and EMI/RFI in
high frequency power conditioning systems.
The softness of the recovery eliminates the need for a
snubber in most applications. These devices are ideally
suited for HF welding, power converters and other
applications where switching losses are not significant
portion of the total losses.
ABSOLUTE MAXIMUM RATINGS
PARAMETER
Cathode to anode voltage
Continuous forward current
Single pulse forward current
Maximum repetitive forward current
Operating junction and storage temperatures
SYMBOL
V
R
I
F(AV)
I
FSM
I
FRM
T
J
, T
Stg
T
C
= 116 °C
T
C
= 25 °C
Square wave, 20 kHz
TEST CONDITIONS
MAX.
600
60
600
120
-55 to +175
°C
A
UNITS
V
ELECTRICAL SPECIFICATIONS
(T
J
= 25 °C unless otherwise specified)
PARAMETER
Breakdown voltage,
blocking voltage
Forward voltage
SYMBOL
V
BR
,
V
R
V
F
TEST CONDITIONS
I
R
= 100 μA
I
F
= 60 A
I
F
= 60 A, T
J
= 125 °C
I
F
= 60 A, T
J
= 175 °C
Reverse leakage current
Junction capacitance
I
R
C
T
V
R
= V
R
rated
T
J
= 150 °C, V
R
= V
R
rated
V
R
= 600 V
MIN.
600
-
-
-
-
-
-
TYP.
-
1.35
1.20
1.11
-
-
39
MAX.
-
1.68
1.42
1.30
50
500
-
μA
pF
V
UNITS
Revision: 09-Jul-15
Document Number: 94023
1
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
VS-60EPU06PbF, VS-60EPU06-N3, VS-60APU06PbF, VS-60APU06-N3
www.vishay.com
Vishay Semiconductors
DYNAMIC RECOVERY CHARACTERISTICS
(T
J
= 25 °C unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
I
F
= 1 A, dI
F
/dt = 200 A/μs, V
R
= 30 V
Reverse recovery time
t
rr
T
J
= 25 °C
T
J
= 125 °C
Peak recovery current
I
RRM
Q
rr
T
J
= 25 °C
T
J
= 125 °C
T
J
= 25 °C
T
J
= 125 °C
I
F
= 60 A
dI
F
/dt = 200 A/μs
V
R
= 200 V
MIN.
-
-
-
-
-
-
-
TYP.
34
81
164
7.4
17.0
300
1394
MAX.
45
-
-
-
-
-
-
A
ns
UNITS
Reverse recovery charge
nC
THERMAL - MECHANICAL SPECIFICATIONS
PARAMETER
Thermal resistance,
junction to case
Thermal resistance,
case to heatsink
Weight
Mounting torque
Marking device
Case style TO-247AC modified
Case style TO-247AC
SYMBOL
R
thJC
R
thCS
Mounting surface, flat, smooth
and greased
TEST CONDITIONS
MIN.
-
-
-
-
1.2
(10)
TYP.
-
0.2
5.5
0.2
-
MAX.
0.63
K/W
-
-
-
2.4
(20)
60EPU06
60APU06
g
oz.
N
m
(lbf
in)
UNITS
1000
1000
I
R
- Reverse Current (µA)
100
10
I
F
- Instantaneous
Forward Current (A)
T
J
= 175 °C
100
T
J
= 125 °C
1
0.1
0.01
0.001
10
T
J
= 175 °C
T
J
= 125 °C
T
J
= 25 °C
T
J
= 25 °C
1
0
0.5
1.0
1.5
2.0
2.5
3.0
0
100
200
300
400
500
600
V
F
- Forward Voltage Drop (V)
Fig. 1 - Typical Forward Voltage Drop Characteristics
V
R
- Reverse Voltage (V)
Fig. 2 - Typical Values of Reverse Current vs.
Reverse Voltage
Revision: 09-Jul-15
Document Number: 94023
2
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
VS-60EPU06PbF, VS-60EPU06-N3, VS-60APU06PbF, VS-60APU06-N3
www.vishay.com
Vishay Semiconductors
1000
C
T
- Junction Capacitance (pF)
100
T
J
= 25 °C
10
0
100
200
300
400
500
600
V
R
- Reverse Voltage (V)
Fig. 3 - Typical Junction Capacitance vs. Reverse Voltage
Z
thJC
- Thermal Impedance (°C/W)
1
0.7
0.5
0.3
0.1
0.1
R
1
R
2
τ
2
R
3
τ
3
T
C
Ri (°C/W)
0.06226
0.32503
0.24271
τi
(s)
0.00049
0.01294
0.24310
0.05
T
J
τ
1
Ci =
τi/Ri
Notes:
1. Duty factor D = t
on
/period
2. Peak T
J
= P
DM
x Z
thJC
+ T
C
1
0.01
0.00001
0.0001
0.001
0.01
0.1
10
100
t
on
- Rectangular Pulse Duration (s)
Fig. 4 - Maximum Thermal Impedance Z
thJC
Characteristics
180
140
Allowable Case Temperature (°C)
DC
140
120
100
80
See note (1)
60
0
20
40
60
80
100
Square wave (D = 0.50)
80 % rated V
R
applied
Average Power Loss (W)
160
120
100
80
60
40
20
0
0
20
40
60
80
100
DC
RMS limit
D = 0.01
D = 0.02
D = 0.05
D = 0.10
D = 0.20
D = 0.50
I
F(AV)
- Average Forward Current (A)
Fig. 5 - Maximum Allowable Case Temperature vs.
Average Forward Current
I
F(AV)
- Average Forward Current (A)
Fig. 6 - Forward Power Loss Characteristics
Revision: 09-Jul-15
Document Number: 94023
3
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
VS-60EPU06PbF, VS-60EPU06-N3, VS-60APU06PbF, VS-60APU06-N3
www.vishay.com
300
3000
2500
I
F
= 30 A
I
F
= 60 A
2000
T
J
= 125 °C
T
J
= 25 °C
Vishay Semiconductors
T
J
= 125 °C
T
J
= 25 °C
250
Q
rr
(nC)
t
rr
(ns)
200
I
F
= 30 A
I
F
= 60 A
1500
1000
150
100
500
0
10
100
1000
10
100
1000
50
dI
F
/dt (A/µs)
Fig. 7 - Typical Reverse Recovery Time vs. dI
F
/dt
(1)
dI
F
/dt (A/µs)
Fig. 8 - Typical Stored Charge vs. dI
F
/dt
Note
Formula used: T
C
= T
J
- (Pd + Pd
REV
) x R
thJC
;
Pd = Forward power loss = I
F(AV)
x V
FM
at (I
F(AV)
/D) (see fig. 6);
Pd
REV
= Inverse power loss = V
R1
x I
R
(1 - D); I
R
at V
R1
= 80 % rated V
R
V
R
= 200 V
0.01
Ω
L = 70 μH
D.U.T.
dI
F
/dt
adjust
D
G
IRFP250
S
Fig. 9 - Reverse Recovery Parameter Test Circuit
(3)
I
F
0
t
rr
t
a
t
b
Q
rr
(2)
(4)
I
RRM
0.5 I
RRM
dI
(rec)M
/dt
(5)
0.75 I
RRM
(1)
dI
F
/dt
(1) dI
F
/dt - rate of change of current
through zero crossing
(2) I
RRM
- peak reverse recovery current
(3) t
rr
- reverse recovery time measured
from zero crossing point of negative
going I
F
to point where a line passing
through 0.75 I
RRM
and 0.50 I
RRM
extrapolated to zero current.
(4)
Q
rr
- area under curve defined by t
rr
and I
RRM
Q
rr
=
t
rr
x I
RRM
2
(5) dI
(rec)M
/dt - peak rate of change of
current during t
b
portion of t
rr
Fig. 10 - Reverse Recovery Waveform and Definitions
Revision: 09-Jul-15
Document Number: 94023
4
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
VS-60EPU06PbF, VS-60EPU06-N3, VS-60APU06PbF, VS-60APU06-N3
www.vishay.com
ORDERING INFORMATION TABLE
Vishay Semiconductors
Device code
VS-
1
1
2
3
-
-
-
60
2
E
3
P
4
U
5
06
6
PbF
7
Vishay Semiconductors product
Current rating (60 = 60 A)
Circuit configuration:
E = single diode
A = single diode, 3 pins
4
5
6
7
-
Package:
P = TO-247AC (modified)
-
Type of silicon:
U = ultrafast recovery
-
-
Voltage rating (06 = 600 V)
Environmental digit:
PbF = lead (Pb)-free and RoHS-compliant
-N3 = halogen-free, RoHS-compliant and totally lead (Pb)-free
ORDERING INFORMATION
(Example)
PREFERRED P/N
VS-60EPU06PbF
VS-60EPU06-N3
VS-60APU06PbF
VS-60APU06-N3
QUANTITY PER T/R
25
25
25
25
MINIMUM ORDER QUANTITY
500
500
500
500
PACKAGING DESCRIPTION
Antistatic plastic tube
Antistatic plastic tube
Antistatic plastic tube
Antistatic plastic tube
LINKS TO RELATED DOCUMENTS
Dimensions
TO-247AC modified
TO-247AC
TO-247AC modified PbF
Part marking information
TO-247AC modified -N3
TO-247ACPbF
TO-247AC-N3
www.vishay.com/doc?95541
www.vishay.com/doc?95542
www.vishay.com/doc?95255
www.vishay.com/doc?95442
www.vishay.com/doc?95226
www.vishay.com/doc?95007
Revision: 09-Jul-15
Document Number: 94023
5
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
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