VS-32CTQ025-M3, VS-32CTQ030-M3
www.vishay.com
Vishay Semiconductors
High Performance Schottky Rectifier, 2 x 15 A
Base 2
common
cathode
FEATURES
• 150 °C T
J
operation
• Low forward voltage drop
• High frequency operation
• High
purity,
high
temperature
epoxy
encapsulation for enhanced mechanical strength
and moisture resistance
• Guard ring for enhanced ruggedness and long term
reliability
• Designed and qualified according to JEDEC
®
-JESD 47
• Material categorization: for definitions of compliance
please see
www.vishay.com/doc?99912
Anode
3L
TO-220AB
Anode
2
1 Common 3
cathode
PRIMARY CHARACTERISTICS
I
F(AV)
V
R
V
F
at I
F
I
RM
max.
T
J
max.
E
AS
Package
Circuit configuration
2 x 15 A
25 V, 30 V
0.40 V
97 mA at 125 °C
150 °C
13 mJ
3L TO-220AB
Common cathode
DESCRIPTION
The VS-32CTQ... Schottky rectifier series has been
optimized for low reverse leakage at high temperature. The
proprietary barrier technology allows for reliable operation up
to 150 °C junction temperature. Typical applications are in
switching power supplies, converters, freewheeling diodes,
and reverse battery protection.
MAJOR RATINGS AND CHARACTERISTICS
SYMBOL
I
F(AV)
V
RRM
I
FSM
V
F
T
J
t
p
= 5 μs sine
15 A
pk
, T
J
= 125 °C
Range
CHARACTERISTICS
Rectangular waveform
VALUES
30
25/30
900
0.40
-55 to +150
UNITS
A
V
A
V
°C
VOLTAGE RATINGS
PARAMETER
Maximum DC reverse voltage
Maximum working peak reverse voltage
SYMBOL
V
R
V
RWM
VS-32CTQ025-M3
25
VS-32CTQ030-M3
30
UNITS
V
ABSOLUTE MAXIMUM RATINGS
PARAMETER
Maximum average forward current,
see fig. 5
Maximum peak one cycle non-repetitive
surge current, see fig. 7
Non-repetitive avalanche energy
Repetitive avalanche current
SYMBOL
I
F(AV)
TEST CONDITIONS
50 % duty cycle at T
C
= 115 °C, rectangular waveform
5 µs sine or 3 µs rect. pulse
I
FSM
10 ms sine or 6 ms rect. pulse
E
AS
I
AR
Following any rated load
condition and with rated
V
RRM
applied
VALUES
30
900
250
13
3
mJ
A
A
UNITS
T
J
= 25 °C, I
AS
= 1.20 A, L = 11.10 mH
Current decaying linearly to zero in 1 μs
Frequency limited by T
J
maximum V
A
= 1.5 x V
R
typical
Revision: 17-Aug-17
Document Number: 96278
1
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
VS-32CTQ025-M3, VS-32CTQ030-M3
www.vishay.com
Vishay Semiconductors
ELECTRICAL SPECIFICATIONS
PARAMETER
SYMBOL
15 A
Maximum forward voltage drop
See fig. 1
V
FM (1)
30 A
15 A
30 A
Maximum reverse leakage current
See fig. 2
Threshold voltage
Forward slope resistance
Maximum junction capacitance per leg
Typical series inductance per leg
Maximum voltage rate of change
Note
(1)
Pulse width < 300 μs, duty cycle < 2 %
I
RM (1)
V
F(TO)
r
t
C
T
L
S
dV/dt
T
J
= 25 °C
T
J
= 125 °C
T
J
= T
J
maximum
V
R
= 5 V
DC
(test signal range 100 kHz to 1 MHz) 25 °C
Measured lead to lead 5 mm from package body
Rated V
R
TEST CONDITIONS
T
J
= 25 °C
T
J
= 125 °C
V
R
= Rated V
R
VALUES
0.49
0.58
0.40
0.53
1.75
97
0.233
9.09
1300
8.0
10 000
mA
V
m
pF
nH
V/µs
V
UNITS
THERMAL - MECHANICAL SPECIFICATIONS
PARAMETER
Maximum junction and storage
temperature range
Maximum thermal resistance,
junction to case per leg
Typical thermal resistance,
case to heatsink
Approximate weight
minimum
maximum
Case style 3L TO-220AB
SYMBOL
T
J
, T
Stg
R
thJC
R
thCS
DC operation
See fig. 4
TEST CONDITIONS
VALUES
-55 to 150
3.25
°C/W
0.50
2
0.07
6 (5)
12 (10)
g
oz.
kgf · cm
(lbf · in)
UNITS
°C
Mounting surface, smooth and greased
Mounting torque
Marking device
32CTQ025
32CTQ030
Revision: 17-Aug-17
Document Number: 96278
2
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
VS-32CTQ025-M3, VS-32CTQ030-M3
www.vishay.com
Vishay Semiconductors
I
F
- Instantaneous Forward Current (A)
1000
1000
I
R
- Reverse Current (mA)
100
10
1
0.1
T
J
= 150 °C
T
J
= 125 °C
T
J
= 100 °C
T
J
= 75 °C
100
10
T
J
= 150 °C
T
J
= 125 °C
T
J
= 25 °C
T
J
= 50 °C
0.01
0.001
T
J
= 25 °C
1
0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
0
5
10
15
20
25
30
V
FM
- Forward Voltage Drop (V)
Fig. 1 - Maximum Forward Voltage Drop Characteristics
V
R
- Reverse Voltage (V)
Fig. 2 - Typical Values of Reverse Current vs. Reverse Voltage
10 000
C
T
- Junction Capacitance (pF)
1000
T
J
= 25 °C
100
0
5
10
15
20
25
30
35
V
R
- Reverse Voltage (V)
Fig. 3 - Typical Junction Capacitance vs. Reverse Voltage
Z
thJC
- Thermal Impedance (°C/W)
10
1
D = 0.75
D = 0.50
D = 0.33
D = 0.25
D = 0.20
0.1
P
DM
t
1
0.01
Single pulse
(thermal resistance)
t
2
Notes:
1. Duty factor D = t
1
/t
2
2. Peak T
J
= P
DM
x Z
thJC
+ T
C
0.01
0.1
1
10
0.001
0.00001
0.0001
0.001
t
1
- Rectangular Pulse Duration (s)
Fig. 4 - Maximum Thermal Impedance Z
thJC
Characteristics
Revision: 17-Aug-17
Document Number: 96278
3
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
VS-32CTQ025-M3, VS-32CTQ030-M3
www.vishay.com
Vishay Semiconductors
10
D = 0.20
D = 0.25
D = 0.33
D = 0.50
D = 0.75
RMS limit
160
Allowable Case Temperature (°C)
Average Power Loss (W)
150
140
130
120
110
100
90
80
0
5
10
15
20
25
See note (1)
Square
wave
(D = 0.50)
80
% rated
V
R
applied
DC
8
6
4
DC
2
0
0
5
10
15
20
25
I
F(AV)
- Average Forward Current (A)
Fig. 5 - Maximum Allowable Case Temperature vs.
Average Forward Current
I
F(AV)
- Average Forward Current (A)
Fig. 6 - Forward Power Loss Characteristics
I
FSM
- Non-Repetitive Surge Current (A)
1000
At any rated load condition
and
with
rated
V
RRM
applied
following surge
100
10
100
1000
10 000
t
p
- Square Wave Pulse Duration (µs)
Fig. 7 - Maximum Non-Repetitive Surge Current
L
High-speed
switch
Freewheel
diode
40HFL40S02
+
V
d
= 25
V
D.U.T.
IRFP460
R
g
= 25
Ω
Current
monitor
Fig. 8 - Unclamped Inductive Test Circuit
Note
(1)
Formula used: T = T - (Pd + Pd
C
J
REV
) x R
thJC
;
Pd = forward power loss = I
F(AV)
x V
FM
at (I
F(AV)
/D) (see fig. 6);
Pd
REV
= inverse power loss = V
R1
x I
R
(1 - D); I
R
at V
R1
= 80 % rated V
R
Revision: 17-Aug-17
Document Number: 96278
4
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
VS-32CTQ025-M3, VS-32CTQ030-M3
www.vishay.com
ORDERING INFORMATION TABLE
Device code
Vishay Semiconductors
VS-
1
1
2
3
4
5
6
7
-
-
-
-
32
2
C
3
T
4
Q
5
030
6
-M3
7
Vishay Semiconductors product
Current rating (30 A)
Circuit configuration:
C = common cathode
Package:
T = TO-220
-
-
-
Schottky “Q” series
Voltage ratings
Environmental digit
-M3 = halogen-free, RoHS-compliant, and termination lead (Pb)-free
025 = 25 V
030 = 30 V
ORDERING INFORMATION
(Example)
PREFERRED P/N
VS-32CTQ025-M3
VS-32CTQ030-M3
QUANTITY PER T/R
50
50
MINIMUM ORDER QUANTITY
1000
1000
PACKAGING DESCRIPTION
Antistatic plastic tube
Antistatic plastic tube
LINKS TO RELATED DOCUMENTS
Dimensions
Part marking information
www.vishay.com/doc?96154
www.vishay.com/doc?95028
Revision: 17-Aug-17
Document Number: 96278
5
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
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