VS-20CTH03S-M3, VS-20CTH03-1-M3
www.vishay.com
Vishay Semiconductors
Hyperfast Rectifier, 2 x 10 A FRED Pt
®
FEATURES
• Hyperfast recovery time
• Low forward voltage drop
• Low leakage current
2
1
3
1
2
3
• 175 °C operating junction temperature
• Meets MSL level 1, per J-STD-020, LF maximum peak of
245 °C
• Material categorization: for definitions of compliance
please see
www.vishay.com/doc?99912
D
2
PAK (TO-263AB)
Base
common
cathode
2
TO-262AA
Base
common
cathode
2
DESCRIPTION / APPLICATIONS
Vishay Semiconductors 300 V series are the state of the art
hyperfast recovery rectifiers designed with optimized
performance of forward voltage drop and hyperfast
recovery time.
The planar structure and the platinum doped life time control
guarantee the best overall performance, ruggedness and
reliability characteristics.
These devices are intended for use in the output rectification
stage of SMPS, UPS, DC/DC converters as well as
freewheeling diode in low voltage inverters and chopper
motor drives.
Their extremely optimized stored charge and low recovery
current minimize the switching losses and reduce over
dissipation in the switching element and snubbers.
2
3
1
Common
Anode cathode Anode
2
3
1
Common
Anode cathode Anode
VS-20CTH03S-M3
VS-20CTH03-1-M3
PRIMARY CHARACTERISTICS
I
F(AV)
V
R
V
F
at I
F
t
rr
max.
T
J
max.
Package
Circuit configuration
D
2
PAK
2 x 10 A
300 V
0.85 V
35 ns
175 °C
(TO-263AB), TO-262AA
Common cathode
ABSOLUTE MAXIMUM RATINGS
PARAMETER
Peak repetitive reverse voltage
Average rectified forward current
Non-repetitive peak surge current
Operating junction and storage temperatures
per diode
per device
SYMBOL
V
RRM
I
F(AV)
I
FSM
T
J
, T
Stg
T
C
= 160 °C
T
J
= 25 °C
TEST CONDITIONS
MAX.
300
10
20
120
-65 to +175
°C
A
UNITS
V
ELECTRICAL SPECIFICATIONS
(T
J
= 25 °C unless otherwise specified)
PARAMETER
Breakdown voltage,
blocking voltage
Forward voltage
SYMBOL
V
BR
,
V
R
V
F
I
R
C
T
L
S
I
R
= 100 μA
I
F
= 10 A
I
F
= 10 A, T
J
= 125 °C
V
R
= V
R
rated
T
J
= 125 °C, V
R
= V
R
rated
V
R
= 300 V
Measured lead to lead 5 mm from package body
TEST CONDITIONS
MIN.
300
-
-
-
-
-
-
TYP.
-
1.05
0.85
-
6
30
8
MAX.
-
1.25
0.95
20
200
-
-
μA
pF
nH
V
UNITS
Reverse leakage current
Junction capacitance
Series inductance
Revision: 11-Dec-2018
Document Number: 96386
1
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
VS-20CTH03S-M3, VS-20CTH03-1-M3
www.vishay.com
Vishay Semiconductors
DYNAMIC RECOVERY CHARACTERISTICS
(T
C
= 25 °C unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
I
F
= 1.0 A, dI
F
/dt = 50 A/μs, V
R
= 30 V
Reverse recovery time
t
rr
I
F
= 1.0 A, dI
F
/dt = 100 A/μs, V
R
= 30 V
T
J
= 25 °C
T
J
= 125 °C
Peak recovery current
I
RRM
Q
rr
T
J
= 25 °C
T
J
= 125 °C
T
J
= 25 °C
T
J
= 125 °C
I
F
= 10 A
dI
F
/dt = 200 A/μs
V
R
= 200 V
MIN.
-
-
-
-
-
-
-
-
TYP.
-
-
31
42
2.4
5.6
36
120
MAX.
35
30
-
-
-
-
-
-
A
ns
UNITS
Reverse recovery charge
nC
THERMAL - MECHANICAL SPECIFICATIONS
PARAMETER
Maximum junction and storage
temperature range
Thermal resistance,
junction to case per diode
Weight
Mounting torque
Marking device
Case style D
2
PAK (TO-263AB)
Case style TO-262AA
SYMBOL
T
J
, T
Stg
R
thJC
TEST CONDITIONS
MIN.
-65
-
-
-
6.0
(5.0)
TYP.
-
-
2.0
0.07
-
MAX.
175
1.5
-
-
12
(10)
UNITS
°C
°C/W
g
oz.
kgf · cm
(lbf · in)
20CTH03S
20CTH03-1
100
100
T
J
= 175 °C
I
F
- Instantaneous Forward
Current (A)
I
R
- Reverse Current (µA)
10
T
J
= 150 °C
T
J
= 125 °C
10
T
J
= 175 °C
T
J
= 125 °C
T
J
= 25 °C
1
T
J
= 100 °C
0.1
T
J
= 75 °C
T
J
= 50 °C
T
J
= 25 °C
0.01
1
0.4
0.001
0.6
0.8
1.0
1.2
1.4
1.6
1.8
2.0
50
100
150
200
250
300
V
FM
- Forward Voltage Drop (V)
Fig. 1 - Maximum Forward Voltage Drop Characteristics
V
R
- Reverse Voltage (V)
Fig. 2 - Typical Values of Reverse Current vs. Reverse Voltage
Revision: 11-Dec-2018
Document Number: 96386
2
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
VS-20CTH03S-M3, VS-20CTH03-1-M3
www.vishay.com
1000
Vishay Semiconductors
C
T
- Junction Capacitance (pF)
100
T
J
= 25 °C
10
0
50
100
150
200
250
300
V
R
- Reverse Voltage (V)
Fig. 3 - Typical Junction Capacitance vs. Reverse Voltage
10
Z
thJC
- Thermal Impedance (°C/W)
1
P
DM
0.1
Single pulse
(thermal resistance)
0.01
0.00001
0.0001
D = 0.50
D = 0.20
D = 0.10
D = 0.05
D = 0.02
D = 0.01
0.001
0.01
0.1
t
1
t
2
Notes:
1. Duty factor D = t
1
/t
2
.
2. Peak T
J
= P
DM
x Z
thJC
+ T
C
1
.
10
t
1
- Rectangular Pulse Duration (s)
Fig. 4 - Maximum Thermal Impedance Z
thJC
Characteristics
180
20
Allowable Case Temperature (°C)
Average Power Loss (W)
16
RMS limit
12
D = 0.01
D = 0.02
D = 0.05
D = 0.10
D = 0.20
D = 0.50
8
10
12
14
16
170
DC
160
8
150
Square wave (D = 0.50)
Rated V
R
applied
See note (1)
4
DC
0
140
0
2
4
6
8
10
12
14
16
0
2
4
6
I
F(AV)
- Average Forward Current (A)
Fig. 5 - Maximum Allowable Case Temperature vs.
Average Forward Current
I
F(AV)
- Average Forward Current (A)
Fig. 6 - Forward Power Loss Characteristics
Revision: 11-Dec-2018
Document Number: 96386
3
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
VS-20CTH03S-M3, VS-20CTH03-1-M3
www.vishay.com
100
I
F
= 10 A
1000
I
F
= 10 A
Vishay Semiconductors
Q
rr
(nC)
t
rr
(ns)
T
J
= 125 °C
T
J
= 125 °C
100
T
J
= 25 °C
T
J
= 25 °C
V
R
= 200 V
10
100
1000
10
100
V
R
= 200 V
1000
dI
F
/dt (A/µs)
Fig. 7 - Typical Reverse Recovery Time vs. dI
F
/dt
dI
F
/dt (A/µs)
Fig. 8 - Typical Stored Charge vs. dI
F
/dt
(1)
Note
Formula used: T
C
= T
J
- (Pd + Pd
REV
) x R
thJC
;
Pd = forward power loss = I
F(AV)
x V
FM
at (I
F(AV)
/D) (see fig. 6);
Pd
REV
= inverse power loss = V
R1
x I
R
(1 - D); I
R
at V
R1
= rated V
R
(3)
I
F
0
t
rr
t
a
t
b
Q
rr
(2)
(4)
I
RRM
0.5 I
RRM
di
(rec)M
/dt
(5)
0.75 I
RRM
(1)
di
F
/dt
(1) di
F
/dt - rate of change of current
through zero crossing
(2) I
RRM
- peak reverse recovery current
(3) t
rr
- reverse recovery time measured
from zero crossing point of negative
going I
F
to point where a line passing
through 0.75 I
RRM
and 0.50 I
RRM
extrapolated to zero current.
(4)
Q
rr
- area under curve defined by t
rr
and I
RRM
Q
rr
=
t
rr
x I
RRM
2
(5) di
(rec)M
/dt - peak rate of change of
current during t
b
portion of t
rr
Fig. 9 - Reverse Recovery Waveform and Definitions
Revision: 11-Dec-2018
Document Number: 96386
4
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
VS-20CTH03S-M3, VS-20CTH03-1-M3
www.vishay.com
ORDERING INFORMATION TABLE
Vishay Semiconductors
Device code
VS-
1
1
2
3
4
5
6
7
8
-
-
-
-
-
-
-
-
20
2
C
3
T
4
H
5
03
6
S
7
TRL -M3
8
9
Vishay Semiconductors product
Current rating (20 A)
C = common cathode
T = TO-220, D
2
PAK (TO-263AB)
H = hyperfast rectifier
Voltage rating (03 = 300 V)
S = D
2
PAK (TO-263AB)
-1 = TO-262AA
None = tube (50 pieces)
TRL = tape and reel (left oriented, for D
2
PAK (TO-263AB) package)
TRR = tape and reel (right oriented, for D
2
PAK (TO-263AB) package)
9
-
Environmental digit:
-M3 = halogen-free, RoHS-compliant, and terminations lead (Pb)-free
LINKS TO RELATED DOCUMENTS
Dimensions
Part marking information
Packaging information
SPICE model
D
2
PAK
D
2
PAK
(TO-263AB)
TO-262AA
(TO-263AB)
TO-262AA
D
2
PAK (TO-263AB)
www.vishay.com/doc?96164
www.vishay.com/doc?96165
www.vishay.com/doc?95444
www.vishay.com/doc?95443
www.vishay.com/doc?96424
www.vishay.com/doc?96583
Revision: 11-Dec-2018
Document Number: 96386
5
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
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