VS-MB Series
www.vishay.com
Vishay Semiconductors
Single Phase Bridge Rectifier, 25 A, 35 A
FEATURES
• Universal, 3 way terminals:
push-on, wrap around, or solder
• High thermal conductivity package, electrically
insulated case
• Center hole fixing
• Excellent power/volume ratio
• UL E300359 approved
• Nickel plated terminals solderable using lead (Pb)-free
solder; solder alloy Sn/Ag/Cu (SAC305); solder
temperature 260 °C to 275 °C
• Designed and qualified for industrial level
• Material categorization: for definitions of compliance
please see
www.vishay.com/doc?99912
25 A, 35 A
200 V to 1200 V
D-34
Single phase bridge
D-34
PRIMARY CHARACTERISTICS
I
O
V
RRM
Package
Circuit configuration
DESCRIPTION
A range of extremely compact, encapsulated single phase
bridge rectifiers offering efficient and reliable operation.
They are intended for use in general purpose and
instrumentation applications.
MAJOR RATINGS AND CHARACTERISTICS
SYMBOL
I
O
I
FSM
I
2
t
V
RRM
T
J
CHARACTERISTICS
VALUES
26MB..A
25
T
C
50 Hz
60 Hz
50 Hz
60 Hz
Range
65
400
420
790
725
200 to 1200
-55 to +150
VALUES
36MB..A
35
60
475
500
1130
1030
UNITS
A
°C
A
A
2
s
V
°C
ELECTRICAL SPECIFICATIONS
VOLTAGE RATINGS
TYPE NUMBER
VOLTAGE
CODE
05
06
10
20
26MB..A,
36MB..A
40
60
80
100
120
V
RRM
, MAXIMUM
REPETITIVE PEAK
REVERSE VOLTAGE
V
50
60
100
200
400
600
800
1000
1200
V
RSM
, MAXIMUM
NON-REPETITIVE PEAK
REVERSE VOLTAGE
V
75
100
150
275
500
725
900
1100
1300
2
I
RRM
MAXIMUM
AT T
J
MAXIMUM
Revision: 15-Jan-2019
Document Number: 93563
1
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
VS-MB Series
www.vishay.com
Vishay Semiconductors
VALUES
26MB..A
25
20
65
t = 10 ms
No voltage
reapplied
100 % V
RRM
reapplied
No voltage
reapplied
100 % V
RRM
reapplied
Initial
T
J
= T
J
maximum
400
420
335
350
790
725
560
512
5.6
0.76
0.92
6.8
5.0
1.11
10
2700
VALUES
36MB..A
35
28
60
475
500
400
420
1130
1030
800
730
11.3
0.79
0.96
5.8
4.5
1.14
kA
2
s
V
m
V
μA
V
A
2
s
A
FORWARD CONDUCTION
PARAMETER
Maximum DC output current
at case temperature
SYMBOL
TEST CONDITIONS
Resistive or inductive load
I
O
Capacitive load
UNITS
A
°C
Maximum peak, one-cycle
non-repetitive forward current
I
FSM
t = 8.3 ms
t = 10 ms
t = 8.3 ms
t = 10 ms
t = 8.3 ms
t = 10 ms
t = 8.3 ms
Maximum I
2
t for fusing
I
2
t
Maximum I
2
t
for fusing
Low level value of threshold voltage
High level value of threshold voltage
Low level forward slope resistance
High level forward slope resistance
Maximum forward voltage drop
Maximum DC reverse current
RMS isolation voltage base plate
I
2
t
V
F(TO)1
V
F(TO)2
r
t1
r
t2
V
FM
I
RRM
V
INS
I
2
t for time t
x
= I
2
x
x
0.1
t
x
10 ms, V
RRM
= 0 V
(16.7 % x
x I
F(AV)
< I <
x I
F(AV)
), T
J
maximum
(I >
x I
F(AV)
), T
J
maximum
(16.7 % x
x I
F(AV)
< I <
x I
F(AV)
), T
J
maximum
(I >
x I
F(AV)
), T
J
maximum
T
J
= 25 °C, t
p
= 400 μs, I
FM
= 40 A
pk
(26MB),
I
FM
= 55 A
pk
(36MB)
T
J
= 25 °C, per diode at V
RRM
f = 50 Hz, t = 1 s
THERMAL AND MECHANICAL SPECIFICATIONS
PARAMETER
Junction and storage temperature
range
Maximum thermal resistance
junction to case per bridge
Maximum thermal resistance,
case to heatsink
Approximate weight
Mounting torque ± 10 %
Maximum Allowable Case temperature (°C)
SYMBOL
T
J
, T
Stg
R
thJC
R
thCS
TEST CONDITIONS
VALUES
26MB-A
VALUES
36MB-A
UNITS
°C
-55 to 150
1.7
Mounting surface, smooth, flat, and greased
0.2
20
Bridge to heatsink
2.0
1.2
K/W
g
Nm
150
26MB..A Series
Instantaneous Forward Current (A)
1000
Tj = 25 °C
Tj = 150 °C
130
110
180°
(Rect)
100
90
70
50
0
5
10
15
20
25
30
Average Forward Current (A)
10
180°
(Sine)
26MB..A Series
1
0.5
1
1.5
2
2.5
3
3.5
Instantaneous Forward Voltage (V)
Fig. 1 - Current Ratings Characteristics
Fig. 2 - Forward Voltage Drop Characteristics
Maximum Allowable Ambient Temperature
Revision: 15-Jan-2019
Document Number: 93563
2
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
VS-MB Series
www.vishay.com
Vishay Semiconductors
Maximum Average Forward Power Loss (W)
50
40
30
20
10
0
0
5
10
15
20
25
0
26MB..A Series
T
J
= 150 °C
180°
(Sine)
2
A
hS
Rt
=
1
K/
W
W
K/
-
Δ
180°
(Rect)
3K
/W
4K
/W
5K
/W
R
7 K/W
10 K
/W
25
50
75
100
125
150
Average Forward Current (A)
Maximum Allowable Ambient Temperature (°C)
Fig. 3 - Total Power Loss Characteristics
400
350
300
250
200
150
Maximum Allowable Case temperature (°C)
Peak Half Sine Wave Forward Current (A)
At Any Rated Load Condition And With
Rated V
RRM
Applied Following Surge
Initial T
J
= 150 °C
at 60 Hz 0.0083 s
at 50 Hz 0.0100 s
150
36MB..A Series
130
110
90
70
50
0
5
10
15
20
25
30
35
40
Average Forward Current (A)
180°
(Rect)
180°
(Sine)
26MB..A Series
100
1
10
100
Number of Equal Amplitude Half Cycle Current Pulses (N)
Fig. 4 - Maximum Non-Repetitive Surge Current
Fig. 6 - Current Ratings Characteristics
Peak Half Sine Wave Forward Current (A)
450
Instantaneous Forward Current (A)
350
Maximum Non Repetitive Surge Current
Versus Pulse Train Duration.
Initial T
J
= 150 °C
No Voltage Reapplied
Rated V
RRM
Reapplied
1000
T
J
= 25 °C
T
J
= 150 °C
100
250
10
36MB..A Series
150
26MB..A Series
50
0.01
0.1
Pulse Train Duration (s)
1
1
0.5
1
1.5
2
2.5
3
3.5
Instantaneous Forward Voltage (V)
Fig. 5 - Maximum Non-Repetitive Surge Current
Fig. 7 - Forward Voltage Drop Characteristics
Revision: 15-Jan-2019
Document Number: 93563
3
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
VS-MB Series
www.vishay.com
Vishay Semiconductors
Maximum Average Forward Power Loss (W)
80
36MB..A Series
T
J
= 150 °C
180°
(Sine)
180°
(Rect)
Rt
hS
A
60
=
1K
/W
0.
7
K/
W
40
2K
/W
-D
elt
a
R
3K
/W
4 K/W
20
5 K/W
7 K/W
0
0
5
10
15
20
25
30
35
25
50
75
100
125
15
0
Average Forward Current (A)
Maximum Allowable Ambient Temperature (°C)
Fig. 8 - Total Power Loss Characteristics
Peak Half Sine Wave Forward Current (A)
450
400
350
300
250
200
150
100
1
Peak Half Sine Wave Forward Current (A)
At Any Rated Load Condition And With
Rated V
RRM
Applied Following Surge.
Initial T
J
= 150 °C
at 60 Hz 0.0083 s
at 50 Hz 0.0100 s
500
450
400
350
300
250
200
150
Maximum Non Repetitive Surge Current
Versus Pulse Train Duration.
Initial T
J
= 150 °C
No Voltage Reapplied
Rated V
RRM
Reapplied
36MB..A Series
36MB..A Series
10
100
100
0.01
0.1
Pulse Train Duration (s)
1
Number of Equal Amplitude Half Cycle Current Pulses (N)
Fig. 9 - Maximum Non-Repetitive Surge Current
Fig. 10 - Maximum Non-Repetitive Surge Current
ORDERING INFORMATION TABLE
Device code
VS-
1
1
2
3
36
2
-
-
-
-
-
MB
3
120
4
A
5
Vishay Semiconductors product
Current rating code
Circuit configuration:
MB = Single phase european coding
Voltage code x 10 = V
RRM
Diode bridge rectifier:
A = 26 MB, 36 MB series
26 = 25 A (average)
36 = 35 A (average)
4
5
Revision: 15-Jan-2019
Document Number: 93563
4
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
VS-MB Series
www.vishay.com
CIRCUIT CONFIGURATION
AC
Vishay Semiconductors
(+)
AC
(-)
LINKS TO RELATED DOCUMENTS
Dimensions
www.vishay.com/doc?95326
Revision: 15-Jan-2019
Document Number: 93563
5
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
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