VS-APH3006-N3, VS-EPH3006-N3
www.vishay.com
Vishay Semiconductors
Hyperfast Rectifier, 30 A FRED Pt
®
FEATURES
• Low forward voltage drop
• Hyperfast soft recovery time
• 175 °C operating junction temperature
1
1
2
3
3
• Designed and qualified according to
JEDEC
®
-JESD 47
TO-247AC 2L
Base cathode
2
Available
TO-247AC
3L
Base cathode
2
• Material categorization: for definitions of compliance
please see
www.vishay.com/doc?99912
DESCRIPTION / APPLICATIONS
1
Anode
3
Anode
1
Cathode
3
Anode
Hyperfast recovery rectifiers designed with optimized
performance of forward voltage drop, hyperfast recovery
time, and soft recovery.
The planar structure and the platinum doped life time control
guarantee the best overall performance, ruggedness and
reliability characteristics.
These devices are intended for use in PFC Boost stage in
the AC/DC section of SMPS, inverters or as freewheeling
diodes.
The extremely optimized stored charge and low recovery
current minimize the switching losses and reduce over
dissipation in the switching element and snubbers.
VS-APH3006-N3
VS-EPH3006-N3
PRIMARY CHARACTERISTICS
I
F(AV)
V
R
V
F
at I
F
t
rr
typ.
T
J
max.
Package
Circuit configuration
30 A
600 V
1.4 V
27 ns
175 °C
TO-247AC 3L, TO-247AC 2L
Single
ABSOLUTE MAXIMUM RATINGS
PARAMETER
Repetitive peak reverse voltage
Average rectified forward current
Non-repetitive peak surge current
Operating junction and storage temperatures
SYMBOL
V
RRM
I
F(AV)
I
FSM
T
J
, T
Stg
T
C
= 112 °C
T
C
= 25 °C, t
p
= 10 ms
TEST CONDITIONS
MAX.
600
30
220
-65 to +175
UNITS
V
A
°C
ELECTRICAL SPECIFICATIONS
(T
J
= 25 °C unless otherwise specified)
PARAMETER
Breakdown voltage,
blocking voltage
Forward voltage
SYMBOL
V
BR
,
V
R
V
F
I
R
C
T
L
S
I
R
= 100 μA
I
F
= 30 A
I
F
= 30 A, T
J
= 150 °C
V
R
= V
R
rated
T
J
= 150 °C, V
R
= V
R
rated
V
R
= 600 V
Measured lead to lead 5 mm from package body
TEST CONDITIONS
MIN.
600
-
-
-
-
-
-
TYP.
-
2.0
1.4
-
-
20
8.0
MAX.
-
2.65
1.8
30
300
-
-
μA
pF
nH
V
UNITS
Reverse leakage current
Junction capacitance
Series inductance
Revision: 28-Nov-2019
Document Number: 93571
1
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
VS-APH3006-N3, VS-EPH3006-N3
www.vishay.com
Vishay Semiconductors
TEST CONDITIONS
I
F
= 1 A, dI
F
/dt = 50 A/μs, V
R
= 30 V
T
J
= 25 °C
T
J
= 125 °C
T
J
= 25 °C
T
J
= 125 °C
T
J
= 25 °C
T
J
= 125 °C
I
F
= 30 A
dI
F
/dt = 200 A/μs
V
R
= 200 V
MIN.
-
-
-
-
-
-
-
TYP.
26
26
70
3.5
7.6
50
280
MAX.
35
-
-
-
-
-
-
A
ns
UNITS
DYNAMIC RECOVERY CHARACTERISTICS
(T
J
= 25 °C unless otherwise specified)
PARAMETER
Reverse recovery time
SYMBOL
t
rr
Peak recovery current
I
RRM
Q
rr
Reverse recovery charge
nC
THERMAL - MECHANICAL SPECIFICATIONS
PARAMETER
Maximum junction and storage
temperature range
Thermal resistance,
junction to case
Thermal resistance,
junction to ambient per leg
Thermal resistance,
case to heatsink
Weight
Mounting torque
Marking device
Case style TO-247AC 3L
Case style TO-247AC 2L
SYMBOL
T
J
, T
Stg
R
thJC
R
thJA
R
thCS
Typical socket mount
Mounting surface, flat, smooth, and greased
TEST CONDITIONS
MIN.
-65
-
-
-
-
-
1.2
(10)
TYP.
-
0.7
-
0.5
5.5
0.2
-
MAX.
175
1.1
40
-
-
-
2.4
(20)
APH3006
EPH3006
g
oz.
kgf · cm
(lbf · in)
UNITS
°C
°C/W
I
F
- Instantaneous Forward Current (A)
1000
1000
175 °C
100
150 °C
125 °C
100 °C
1
0.1
0.01
0.001
0.0001
75 °C
50 °C
25 °C
Reverse Current - I
R
(μA)
10
100
T
J
= 175 °C
10
T
J
= 150 °C
T
J
= 25 °C
1
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
0
100
200
300
400
500
600
V
FM
- Forward Voltage Drop (V)
Fig. 1 - Typical Forward Voltage Drop Characteristics
Reverse Voltage - V
R
(V)
Fig. 2 - Typical Values of Reverse Current vs. Reverse Voltage
Revision: 28-Nov-2019
Document Number: 93571
2
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
VS-APH3006-N3, VS-EPH3006-N3
www.vishay.com
Vishay Semiconductors
1000
Junction Capacitance - C
T
(pF)
100
10
1
0
100
200
300
400
500
600
Reverse Voltage - V
R
(V)
Fig. 3 - Typical Junction Capacitance vs. Reverse Voltage
10
Thermal Impedance Z
thJC
(°C/W)
1
D = 0.5
D = 0.2
D = 0.1
D = 0.05
0.1
D = 0.02
D = 0.01
Single
Pulse
(Thermal Resistance)
0.01
1E-05
1E-04
1E-03
1E-02
1E-01
1E+00
t1, Rectangular Pulse Duration (s)
Fig. 4 - Max. Thermal Impedance Z
thJC
Characteristics
180
170
Allowable Case Temperature (°C)
160
150
140
130
120
110
100
90
80
0
10
20
30
40
50
Average Forward Current - I
F(AV)
(A)
Average Power Loss (W)
80
RMS Limit
60
40
20
D = 0.01
D = 0.02
D = 0.05
D = 0.1
D = 0.2
D = 0.5
DC
0
0
5
10
15
20
25
30
35
40
45
Average Forward Current - I
F(AV)
(A)
Fig. 5 - Maximum Allowable Case Temperature vs.
Average Forward Current
Fig. 6 - Forward Power Loss Characteristics
Revision: 28-Nov-2019
Document Number: 93571
3
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
VS-APH3006-N3, VS-EPH3006-N3
www.vishay.com
Vishay Semiconductors
900
800
90
80
70
60
I
F
= 30 A, 125 °C
700
600
Q
rr
(nC)
I
F
= 30 A, 125 °C
500
400
300
t
rr
(ns)
50
40
30
20
typical value
10
100
1000
I
F
= 30 A, 25 °C
200
10
I
F
= 30 A, 25 °C
typical value
0
100
1000
dI
F
/dt (A/μs)
Fig. 7 - Typical Reverse Recovery vs. dI
F
/dt
dI
F
/dt (A/μs)
Fig. 8 - Typical Stored Charge vs. dI
F
/dt
(3)
I
F
0
t
rr
t
a
t
b
Q
rr
(2)
(4)
I
RRM
0.5 I
RRM
di
(rec)M
/dt
(5)
0.75 I
RRM
(1)
di
F
/dt
(1) di
F
/dt - rate of change of current
through zero crossing
(2) I
RRM
- peak reverse recovery current
(3) t
rr
- reverse recovery time measured
from zero crossing point of negative
going I
F
to point where a line passing
through 0.75 I
RRM
and 0.50 I
RRM
extrapolated to zero current.
(4)
Q
rr
- area under curve defined by t
rr
and I
RRM
Q
rr
=
t
rr
x I
RRM
2
(5) di
(rec)M
/dt - peak rate of change of
current during t
b
portion of t
rr
Fig. 9 - Reverse Recovery Waveform and Definitions
Revision: 28-Nov-2019
Document Number: 93571
4
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
VS-APH3006-N3, VS-EPH3006-N3
www.vishay.com
ORDERING INFORMATION TABLE
Vishay Semiconductors
Device code
VS-
1
1
2
-
-
E
2
P
3
H
4
30
5
06
6
-N3
7
Vishay Semiconductors product
Circuit configuration
• E = single diode, 2 pins
• A = single diode, 3 pins
P = TO-247AC
H = hyperfast recovery time
Current code (30 = 30 A)
3
4
5
-
-
-
6
7
-
-
Voltage code (06 = 600 V)
Environmental digit:
-N3 = halogen-free, RoHS-compliant and totally lead (Pb)-free
ORDERING INFORMATION
(Example)
PREFERRED P/N
VS-APH3006-N3
VS-EPH3006-N3
QUANTITY PER TUBE
25
25
MINIMUM ORDER QUANTITY
500
500
PACKAGING DESCRIPTION
Antistatic plastic tube
Antistatic plastic tube
LINKS TO RELATED DOCUMENTS
Dimensions
Part marking information
SPICE model
TO-247AC 3L
TO-247AC 2L
TO-247AC 3L
TO-247AC 2L
www.vishay.com/doc?96138
www.vishay.com/doc?96144
www.vishay.com/doc?95007
www.vishay.com/doc?95442
www.vishay.com/doc?96580
Revision: 28-Nov-2019
Document Number: 93571
5
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
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