b. Guaranteed by design, not subject to production testing
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
S17-1794-Rev. C, 04-Dec-17
Document Number: 63823
2
For technical questions, contact:
pmostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
SiR846ADP
www.vishay.com
TYPICAL CHARACTERISTICS
(25 °C, unless otherwise noted)
100
V
GS
= 10 V thru 5 V
80
I
D
- Drain Current (A)
I
D
- Drain Current (A)
8
10
Vishay Siliconix
60
V
GS
= 4 V
40
6
T
C
= 25
°C
4
20
V
GS
= 3 V
0
0.0
1.0
2.0
3.0
4.0
V
DS
- Drain-to-Source Voltage (V)
5.0
2
T
C
= 125
°C
T
C
= - 55
°C
0.0
1.0
2.0
3.0
4.0
V
GS
-
Gate-to-Source
Voltage (V)
5.0
0
Output Characteristics
Transfer Characteristics
0.0090
3100
0.0084
R
DS(on)
- On-Resistance (Ω)
V
GS
= 6 V
0.0078
V
GS
= 7.5 V
0.0072
C - Capacitance (pF)
2480
C
iss
1860
C
oss
1240
0.0066
V
GS
= 10 V
0.0060
0
20
40
60
I
D
- Drain Current (A)
80
100
620
C
rss
0
0
20
40
60
80
V
DS
- Drain-to-Source Voltage (V)
100
On-Resistance vs. Drain Current
Capacitance
10
R
DS(on)
- On-Resistance (Normalized)
2.0
I
D
= 20 A
V
GS
-
Gate-to-Source
Voltage (V)
8
V
DS
= 50 V
6
V
DS
= 25 V
V
DS
= 75 V
4
I
D
= 20 A
1.7
V
GS
= 10 V
1.4
V
GS
= 6 V
1.1
2
0.8
0
0
9
18
27
Q
g
- Total
Gate
Charge (nC)
36
45
0.5
- 50
- 25
0
25
50
75
100
T
J
- Junction Temperature (°C)
125
150
Gate Charge
On-Resistance vs. Junction Temperature
S17-1794-Rev. C, 04-Dec-17
Document Number: 63823
3
For technical questions, contact:
pmostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
SiR846ADP
www.vishay.com
TYPICAL CHARACTERISTICS
(25 °C, unless otherwise noted)
100
0.03
Vishay Siliconix
10
I
S
-
Source
Current (A)
T
J
= 150 °C
R
DS(on)
- On-Resistance (Ω)
0.02
I
D
= 20 A
1
T
J
= 25 °C
0.02
T
J
= 125 °C
0.01
0.1
0.01
0.01
T
J
= 25
°C
0.001
0.0
0.2
0.4
0.6
0.8
1.0
V
SD
-
Source-to-Drain
Voltage (V)
1.2
0.00
0
2
4
6
8
V
GS
-
Gate-to-Source
Voltage (V)
10
Source-Drain Diode Forward Voltage
On-Resistance vs. Gate-to-Source Voltage
0.5
200
0.2
V
GS(th)
Variance (V)
160
I
D
= 5 mA
- 0.4
I
D
= 250 μA
Power (W)
150
- 0.1
120
80
- 0.7
40
- 1.0
- 50
- 25
0
25
50
75
T
J
- Temperature (°C)
100
125
0
0.001
0.01
0.1
Time (s)
1
10
Threshold Voltage
Single Pulse Power, Junction-to-Ambient
1000
I
DM
Limited
100
I
D
- Drain Current (A)
I
D
Limited
10
100 us
1 ms
10 ms
1
Limited by R
DS(on)
*
100 ms
0.1
T
A
= 25 °C
Single
Pulse
0.01
0.01
1
s
10
s
BVDSS Limited
DC
0.1
1
10
100
V
DS
- Drain-to-Source Voltage (V)
* V
GS
> minimum V
GS
at which R
DS(on)
is
specified
Safe Operating Area, Junction-to-Ambient
S17-1794-Rev. C, 04-Dec-17
Document Number: 63823
4
For technical questions, contact:
pmostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
SiR846ADP
www.vishay.com
TYPICAL CHARACTERISTICS
(25 °C, unless otherwise noted)
80
Vishay Siliconix
64
I
D
- Drain Current (A)
Package Limited
48
32
16
0
0
25
50
75
100
T
C
- Case Temperature (°C)
125
150
Current Derating
a
100
2.5
80
2.0
Power (W)
Power (W)
0
25
50
75
100
T
C
- Case Temperature (°C)
125
150
60
1.5
40
1.0
20
0.5
0
0.0
0
25
50
75
100
125
T
A
- Ambient Temperature (°C)
150
Power, Junction-to-Case
Power, Junction-to-Ambient
Note
a. The power dissipation P
D
is based on T
J
max. = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper
dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the
package limit.
S17-1794-Rev. C, 04-Dec-17
Document Number: 63823
5
For technical questions, contact:
pmostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
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