VS-40CTQ150S-M3, VS-40CTQ150-1-M3
www.vishay.com
Vishay Semiconductors
High Performance Schottky Rectifier, 2 x 20 A
FEATURES
• Very low forward voltage drop
• 175 °C T
J
operation
2
1
3
1
2
3
• Center tap TO-220 package
• High frequency operation
• High purity, high temperature epoxy
encapsulation for enhanced mechanical strength and
moisture resistance
• Guard ring for enhanced ruggedness and long term
reliability
• Meets MSL level 1, per J-STD-020, LF maximum peak
of 245 °C
• Designed and qualified according to JEDEC
®
-JESD 47
• Material categorization: for definitions of compliance
please see
www.vishay.com/doc?99912
D
2
PAK (TO-263AB)
Base
common
cathode
2
TO-262AA
Base
common
cathode
2
2
1 Common
3
Anode cathode Anode
2
1 Common
3
Anode cathode Anode
VS-40CTQ150S-M3
VS-40CTQ150-1-M3
DESCRIPTION
The VS-40CTQ... center tap Schottky rectifier has been
optimized for very low forward voltage drop, with moderate
leakage. The proprietary barrier technology allows for
reliable operation up to 175 °C junction temperature. Typical
applications are in switching power supplies, converters,
freewheeling diodes, and reverse battery protection.
PRIMARY CHARACTERISTICS
I
F(AV)
V
R
V
F
at I
F
I
RM
T
J
max.
E
AS
Package
Circuit configuration
D
2
PAK
2 x 20 A
150 V
0.71 V
15 mA at 125 °C
175 °C
1 mJ
(TO-263AB), TO-262AA
Common cathode
MAJOR RATINGS AND CHARACTERISTICS
SYMBOL
I
F(AV)
V
RRM
I
FSM
V
F
T
J
t
p
= 5 μs sine
20 A
pk
, T
J
= 125 °C (per leg)
CHARACTERISTICS
Rectangular waveform
VALUES
40
150
1500
0.71
-55 to +175
UNITS
A
V
A
V
°C
VOLTAGE RATINGS
PARAMETER
Maximum DC reverse voltage
Maximum working peak reverse voltage
SYMBOL
V
R
V
RWM
VS-40CTQ150S-M3
VS-40CTQ150-1-M3
150
UNITS
V
Revision: 27-Oct-17
Document Number: 95732
1
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
VS-40CTQ150S-M3, VS-40CTQ150-1-M3
www.vishay.com
Vishay Semiconductors
ABSOLUTE MAXIMUM RATINGS
PARAMETER
Maximum average forward
current, see fig. 5
per leg
per device
SYMBOL
I
F(AV)
TEST CONDITIONS
50 % duty cycle at T
C
= 140 °C, rectangular waveform
5 μs sine or 3 μs rect. pulse
Maximum peak one cycle non-repetitive
surge current per leg, see fig. 7
Non-repetitive avalanche energy per leg
Repetitive avalanche current per leg
I
FSM
E
AS
I
AR
10 ms sine or 6 ms rect.
pulse
Following any rated
load condition and
with rated V
RRM
applied
VALUES
20
40
1500
250
1.0
1.5
mJ
A
A
UNITS
T
J
= 25 °C, I
AS
= 1.5 A, L = 0.9 mH
Current decaying linearly to zero in 1 μs
Frequency limited by T
J
maximum V
A
= 1.5 x V
R
typical
ELECTRICAL SPECIFICATIONS
PARAMETER
Maximum forward voltage drop per leg
See fig. 1
SYMBOL
20 A
V
FM (1)
40 A
20 A
40 A
Maximum reverse leakage current per leg
See fig. 2
Maximum junction capacitance per leg
Typical series inductance per leg
Maximum voltage rate of change
Note
(1)
Pulse width < 300 μs, duty cycle < 2 %
I
RM (1)
C
T
L
S
dV/dt
T
J
= 25 °C
T
J
= 125 °C
TEST CONDITIONS
T
J
= 25 °C
T
J
= 125 °C
V
R
= Rated V
R
VALUES
0.93
1.16
0.71
0.85
50
15
450
8.0
10 000
μA
mA
pF
nH
V/μs
V
UNITS
V
R
= 5 V
DC
(test signal range 100 kHz to 1 MHz), 25 °C
Measured lead to lead 5 mm from package body
Rated V
R
THERMAL - MECHANICAL SPECIFICATIONS
PARAMETER
Maximum junction and storage temperature range
Maximum thermal resistance,
junction to case per leg
Maximum thermal resistance,
junction to case per package
Typical thermal resistance, case to heatsink
Approximate weight
Mounting torque
Marking device
minimum
maximum
Non-lubricated threads
Case style
D
2
PAK
(TO-263AB)
SYMBOL
T
J
, T
Stg
R
thJC
R
thCS
DC operation
See fig. 4
DC operation
Mounting surface, smooth and greased
TEST CONDITIONS
VALUES
-55 to +175
1.5
0.75
0.5
2
0.07
6 (5)
12 (10)
g
oz.
kgf
cm
(lbf
in)
°C/W
UNITS
°C
40CTQ150S
40CTQ150-1
Case style TO-262AA
Revision: 27-Oct-17
Document Number: 95732
2
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
VS-40CTQ150S-M3, VS-40CTQ150-1-M3
www.vishay.com
Vishay Semiconductors
1000
I
F
- Instantaneous Forward Current (A)
100
I
R
- Reverse Current (mA)
100
10
1
T
J
= 175 °C
T
J
= 150 °C
T
J
= 125 °C
T
J
= 100 °C
T
J
= 75 °C
10
T
J
= 175 °C
T
J
= 125 °C
T
J
= 25 °C
0.1
0.01
0.001
T
J
= 50 °C
T
J
= 25 °C
1
0
0.4
0.8
1.2
1.6
0
20
40
60
80
100
120
140
160
V
FM
- Forward Voltage Drop (V)
Fig. 1 - Maximum Forward Voltage Drop Characteristics
V
R
- Reverse Voltage (V)
Fig. 2 - Typical Values of Reverse Current vs. Reverse Voltage
1000
C
T
- Junction Capacitance (pF)
T
J
= 25 °C
100
10
0
40
80
120
160
V
R
- Reverse Voltage (V)
Fig. 3 - Typical Junction Capacitance vs. Reverse Voltage
Z
thJC
- Thermal Impedance (°C/W)
10
1
P
DM
t
1
0.1
Single pulse
(thermal resistance)
D = 0.75
D = 0.50
D = 0.33
D = 0.25
D = 0.20
t
2
Notes:
1. Duty factor D = t
1
/t
2
2. Peak T
J
= P
DM
x Z
thJC
+ T
C
0.1
1
10
100
0.01
0.00001
0.0001
0.001
0.01
t
1
- Rectangular Pulse Duration (s)
Fig. 4 - Maximum Thermal Impedance Z
thJC
Characteristics
Revision: 27-Oct-17
Document Number: 95732
3
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
VS-40CTQ150S-M3, VS-40CTQ150-1-M3
www.vishay.com
Vishay Semiconductors
25
RMS limit
Allowable Case Temperature (°C)
180
Average Power Loss (W)
20
DC
160
DC
15
DC = 0.20
DC = 0.25
DC = 0.33
DC = 0.50
DC = 0.75
140
10
120
Square wave (D = 0.50)
80 % V
R
applied
See note (1)
5
100
0
0
5
10
15
20
25
30
0
5
10
15
20
25
30
I
F(AV)
- Average Forward Current (A)
Fig. 5 - Maximum Allowable Case Temperature vs.
Average Forward Current
I
F(AV)
- Average Forward Current (A)
Fig. 6 - Forward Power Loss Characteristics
I
FSM
- Non-Repetitive Surge Current (A)
10 000
At any rated load condition
and with rated V
RRM
applied
following surge
1000
100
10
100
1000
10 000
t
p
- Square Wave Pulse Duration (µs)
Fig. 7 - Maximum Non-Repetitive Surge Current (Per Leg)
Note
(1)
Formula used: T = T - (Pd + Pd
C
J
REV
) x R
thJC
;
Pd = forward power loss = I
F(AV)
x V
FM
at (I
F(AV)
/D) (see fig. 6);
Pd
REV
= inverse power loss = V
R1
x I
R
(1 - D); I
R
at V
R1
= 80 % V
R
applied
Revision: 27-Oct-17
Document Number: 95732
4
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
VS-40CTQ150S-M3, VS-40CTQ150-1-M3
www.vishay.com
ORDERING INFORMATION TABLE
Vishay Semiconductors
Device code
VS-
1
1
2
3
4
5
6
7
8
-
-
-
-
-
-
-
-
40
2
C
3
T
4
Q
5
150
6
S
7
TRL -M3
8
9
Vishay Semiconductors product
Current rating (40 A)
Circuit configuration:
C = common cathode
T = TO-220
Schottky “Q” series
Voltage rating (150 = 150 V)
S = D
2
PAK (TO-263AB)
-1 = TO-262AA
None = tube (50 pieces)
TRL = tape and reel (left oriented - for D
2
PAK (TO-263AB) only)
TRR = tape and reel (right oriented - for D
2
PAK (TO-263AB) only)
9
-
-M3 = halogen-free, RoHS-compliant, and termination lead (Pb)-free
ORDERING INFORMATION
(Example)
PREFERRED P/N
VS-40CTQ150S-M3
VS-40CTQ150STRL-M3
VS-40CTQ150STRR-M3
VS-40CTQ150-1-M3
QUANTITY PER T/R
50
800
800
50
MINIMUM ORDER QUANTITY
1000
800
800
1000
PACKAGING DESCRIPTION
Antistatic plastic tubes
13" diameter reel
13" diameter reel
Antistatic plastic tubes
LINKS TO RELATED DOCUMENTS
Dimensions
Part marking information
Packaging information
SPICE model
D
2
PAK (TO-263AB)
TO-262AA
D
2
PAK (TO-263AB)
TO-262AA
www.vishay.com/doc?96164
www.vishay.com/doc?96165
www.vishay.com/doc?95444
www.vishay.com/doc?95443
www.vishay.com/doc?96424
www.vishay.com/doc?95434
Revision: 27-Oct-17
Document Number: 95732
5
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
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