Dual N-Channel 25 V (D-S) MOSFET with Schottky Diode
FEATURES
•
•
•
•
•
TrenchFET
®
Gen IV power MOSFET
SkyFET
®
low side MOSFET with integrated Schottky
G
1
return/S
1
pin for enhancing high side driving
100 % R
g
and UIS tested
Material categorization: for definitions of compliance
please see
www.vishay.com/doc?99912
N-Channel 1
MOSFET
G
HS
/G
1
G
1
Return/S
1
V
SW
/S
1
-D
2
V
IN
/D
1
APPLICATIONS
PRODUCT SUMMARY
CHANNEL-1
V
DS
(V)
R
DS(on)
max. () at V
GS
= 10 V
R
DS(on)
max. () at V
GS
= 4.5 V
Q
g
typ. (nC)
I
D
(A)
a
Configuration
25
0.00380
0.00620
6.6
40
Dual
CHANNEL-2
25
0.00090
0.00150
31
60
•
•
•
•
•
CPU core power
Computer / server peripherals
POL
Synchronous buck converter
Telecom DC/DC
G
LS
/G
2
N-Channel 2
MOSFET
Schottky
Diode
GND/S
2
ORDERING INFORMATION
Package
Lead (Pb)-free and halogen-free
PowerPAIR 6 x 5F
SiZF914DT-T1-GE3
ABSOLUTE MAXIMUM RATINGS
(T
A
= 25 °C, unless otherwise noted)
PARAMETER
Drain-source voltage
Gate-source voltage
Continuous drain current (T
J
= 150 °C)
Pulsed drain current (t = 100 μs)
Continuous source-drain diode current
Single pulse avalanche current
Single pulse avalanche energy
T
C
= 25 °C
T
A
= 25 °C
L = 0.1 mH
T
C
= 25 °C
T
C
= 70 °C
T
A
= 25 °C
T
A
= 70 °C
SYMBOL
V
DS
V
GS
I
D
I
DM
I
S
I
AS
E
AS
P
D
T
J
, T
stg
CHANNEL-1
25
+20, -16
40
a
40
a
23.5
b, c
19
b, c
130
22
2.8
b, c
20
20
26.6
17
3.4
b, c
2.2
b, c
-55 to +150
260
CHANNEL-2
25
+16, -12
60
a
60
a
52
b, c
42
b, c
110
60
a
6.7
b, c
34
58
60
38
4
b, c
2.6
b, c
UNIT
V
A
mJ
W
T
C
= 25 °C
T
C
= 70 °C
Maximum power dissipation
T
A
= 25 °C
T
A
= 70 °C
Operating junction and storage temperature range
Soldering recommendations (peak temperature)
d, e
°C
THERMAL RESISTANCE RATINGS
PARAMETER
SYMBOL
CHANNEL-1
TYP.
30
3.8
MAX.
37
4.7
CHANNEL-2
TYP.
25
1.7
MAX.
31
2.1
UNIT
t
10 s
R
thJA
Maximum junction-to-ambient
b, f
°C/W
Maximum junction-to-case (source)
Steady state
R
thJC
Notes
a. Package limited
b. Surface mounted on 1" x 1" FR4 board
c. t = 10 s
d. See solder profile (www.vishay.com/doc?73257). The PowerPAIR is a leadless package. The end of the lead terminal is exposed copper (not
plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not
required to ensure adequate bottom side solder interconnection
e. Rework conditions: manual soldering with a soldering iron is not recommended for leadless components
f. Maximum under steady state conditions is 77 °C/W for channel-1 and 68 °C/W for channel-2
S17-1735 Rev. A, 20-Nov-17
Document Number: 75978
1
For technical questions, contact:
pmostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
SiZF914DT
www.vishay.com
Vishay Siliconix
SYMBOL
TEST CONDITIONS
MIN.
TYP.
MAX.
UNIT
SPECIFICATIONS
(T
J
= 25 °C, unless otherwise noted)
PARAMETER
Static
Drain-source breakdown voltage
V
DS
V
GS
= 0 V, I
D
= 250 μA
Ch-1
Ch-2
Ch-1
Ch-2
Ch-1
Ch-2
Ch-1
Ch-2
Ch-1
Ch-2
Ch-1
Ch-2
Ch-1
Ch-2
Ch-1
Ch-2
Ch-1
Ch-2
25
25
1.1
1.1
-
-
-
-
-
-
20
20
-
-
-
-
-
-
-
-
-
-
-
-
30
-
200
-
-
-
-
2.4
2.2
± 100
± 100
1
350
5
3000
-
-
A
μA
nA
V
Gate-source threshold voltage
V
GS(th)
V
DS
= V
GS
, I
D
= 250 μA
V
DS
= 0 V, V
GS
= +20 V, -16 V
V
DS
= 0 V, V
GS
= +16 V, -12 V
V
DS
= 25 V, V
GS
= 0 V
Gate-source leakage
I
GSS
Zero Gate voltage drain current
I
DSS
V
DS
= 25 V, V
GS
= 0 V, T
J
= 55 °C
On-state drain current
b
I
D(on)
V
DS
5 V, V
GS
= 10 V
V
GS
= 10 V, I
D
= 10 A
0.00270 0.00380
0.00060 0.00090
0.00410 0.00620
0.00095 0.00150
45
105
-
-
S
Drain-source on-state resistance
b
R
DS(on)
V
GS
= 10 V, I
D
= 10 A
V
GS
= 4.5 V, I
D
= 5 A
V
GS
= 4.5 V, I
D
= 5 A
Forward transconductance
b
Dynamic
a
Input capacitance
g
fs
V
DS
= 10 V, I
D
= 20 A
V
DS
= 10 V, I
D
= 20 A
C
iss
Channel-1
V
DS
= 10 V, V
GS
= 0 V, f = 1 MHz
Channel-2
V
DS
= 10 V, V
GS
= 0 V, f = 1 MHz
Ch-1
Ch-2
Ch-1
Ch-2
Ch-1
Ch-2
Ch-1
Ch-2
V
DS
= 10 V, V
GS
= 10 V, I
D
= 10 A
Ch-1
Ch-2
Ch-1
Channel-1
V
DS
= 10 V, V
GS
= 4.5 V, I
D
= 10 A
Ch-2
Ch-1
Ch-2
Ch-1
Ch-2
V
DS
= 10 V, V
GS
= 0 V
Ch-1
Ch-2
Ch-1
Ch-2
-
-
-
-
-
-
-
1050
4670
510
1650
47
370
0.036
0.062
-
-
-
-
-
-
0.072
0.125
21
98
10
47
-
-
-
-
-
-
2
0.6
nC
pF
Output capacitance
C
oss
Reverse transfer capacitance
C
rss
C
rss
/C
iss
ratio
-
-
14
65
6.6
Total gate charge
Q
g
-
-
-
-
-
-
-
0.2
0.1
31
3.2
10.2
1.2
6.4
7.5
27
1
0.3
Gate-source charge
Q
gs
Channel-2
V
DS
= 10 V, V
GS
= 4.5 V, I
D
= 10 A
Gate-drain charge
Q
gd
Output charge
Q
oss
Gate resistance
R
g
f = 1 MHz
S17-1735 Rev. A, 20-Nov-17
Document Number: 75978
2
For technical questions, contact:
pmostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
SiZF914DT
www.vishay.com
Vishay Siliconix
SYMBOL
TEST CONDITIONS
MIN.
TYP.
MAX.
UNIT
SPECIFICATIONS
(T
J
= 25 °C, unless otherwise noted)
PARAMETER
Dynamic
a
Turn-on delay time
t
d(on)
Channel-1
V
DD
= 10 V, R
L
= 2
I
D
5 A, V
GEN
= 4.5 V, R
g
= 1
Channel-2
V
DD
= 10 V, R
L
= 2
I
D
5 A, V
GEN
= 4.5 V, R
g
= 1
Ch-1
Ch-2
Ch-1
Ch-2
Ch-1
Ch-2
Ch-1
Ch-2
Ch-1
Channel-1
V
DD
= 10 V, R
L
= 2
I
D
5 A, V
GEN
= 10 V, R
g
= 1
Channel-2
V
DD
= 10 V, R
L
= 2
I
D
5 A, V
GEN
= 10 V, R
g
= 1
Ch-2
Ch-1
Ch-2
Ch-1
Ch-2
Ch-1
Ch-2
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
20
32
50
60
15
45
10
15
12
16
5
30
20
40
5
6
40
60
100
120
30
90
20
30
25
30
10
60
40
80
10
15
ns
Rise time
t
r
Turn-off delay time
t
d(off)
Fall time
t
f
Turn-on delay time
t
d(on)
Rise time
t
r
Turn-off delay time
t
d(off)
Fall time
Drain-Source Body Diode Characteristics
Continuous source-drain diode current
t
f
I
S
T
C
= 25 °C
Ch-1
Ch-2
Ch-1
Ch-2
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
0.8
0.38
36
66
36
72
20
30
16
36
22
60
130
110
1.2
0.6
70
130
50
150
-
-
-
-
ns
V
A
Pulse diode forward current
a
I
SM
I
S
= 5 A, V
GS
= 0 V
I
S
= 3 A, V
GS
= 0 V
Body diode voltage
V
SD
Ch-1
Ch-2
Ch-1
Ch-2
Body diode reverse recovery time
t
rr
Channel-1
I
F
= 5 A, di/dt = 100 A/μs, T
J
= 25 °C
Channel-2
I
F
= 5 A, di/dt = 100 A/μs, T
J
= 25 °C
ns
Body diode reverse recovery charge
Q
rr
Ch-1
Ch-2
Ch-1
Ch-2
Ch-1
Ch-2
nC
Reverse recovery fall time
t
a
Reverse recovery rise time
t
b
Notes
a. Guaranteed by design, not subject to production testing
b. Pulse test; pulse width
300 μs, duty cycle
2 %
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
S17-1735 Rev. A, 20-Nov-17
Document Number: 75978
3
For technical questions, contact:
pmostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
SiZF914DT
www.vishay.com
CHANNEL-1 TYPICAL CHARACTERISTICS
(25 °C, unless otherwise noted)
Axis Title
100
V
GS
= 10 V thru 4 V
Vishay Siliconix
Axis Title
10000
80
10000
80
2nd line
I
D
- Drain Current (A)
1000
1st line
2nd line
60
2nd line
I
D
- Drain Current (A)
60
1000
40
T
C
= 25 °C
40
100
20
V
GS
= 3 V
100
20
T
C
= 125 °C
T
C
= -55 °C
0
0
0.5
1
1.5
2
2.5
3
V
DS
- Drain-to-Source Voltage (V)
2nd line
10
0
0
1
2
3
4
5
V
GS
- Gate-to-Source Voltage (V)
2nd line
10
Output Characteristics
Transfer Characteristics
Axis Title
0.008
10000
1500
Axis Title
10000
2nd line
R
DS(on)
- On-Resistance (Ω)
1000
0.004
100
1st line
2nd line
2nd line
C - Capacitance (pF)
0.006
1200
V
GS
= 4.5 V
C
iss
1000
1st line
2nd line
100
10
900
C
oss
600
0.002
V
GS
= 10 V
300
C
rss
0
0
20
40
60
80
100
I
D
- Drain Current (A)
2nd line
10
0
0
5
10
15
20
25
V
DS
- Drain-to-Source Voltage (V)
2nd line
On-Resistance vs. Drain Current
Capacitance
Axis Title
10
2nd line
V
GS
- Gate-to-Source Voltage (V)
I
D
= 10 A
Axis Title
10000
2nd line
R
DS(on)
- On-Resistance (Normalized)
1.6
I
D
= 10 A
V
GS
= 10 V
10000
8
V
DS
= 10 V
1.4
1000
V
GS
= 4.5 V
1000
1st line
2nd line
6
V
DS
= 5 V
4
V
DS
= 15 V
1.0
100
0.8
100
2
0
0
3
6
9
12
15
Q
g
- Total Gate Charge (nC)
2nd line
10
0.6
-50
-25
0
25
50
75
100 125 150
T
J
- Junction Temperature (°C)
2nd line
10
Gate Charge
On-Resistance vs. Junction Temperature
S17-1735 Rev. A, 20-Nov-17
Document Number: 75978
4
For technical questions, contact:
pmostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
1st line
2nd line
1.2
1st line
2nd line
SiZF914DT
www.vishay.com
CHANNEL-1 TYPICAL CHARACTERISTICS
(25 °C, unless otherwise noted)
Axis Title
100
T
J
= 150 °C
Vishay Siliconix
Axis Title
10000
0.010
I
D
= 10 A
10000
2nd line
R
DS(on)
- On-Resistance (Ω)
0.008
1000
T
J
= 125 °C
2nd line
I
S
- Source Current (A)
10
T
J
= 25 °C
1000
1st line
2nd line
0.004
100
0.002
T
J
= 25 °C
1
100
0.1
0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
V
SD
- Source-to-Drain Voltage (V)
2nd line
10
0
0
2
4
6
8
10
V
GS
- Gate-to-Source Voltage (V)
2nd line
10
Source-Drain Diode Forward Voltage
On-Resistance vs. Gate-to-Source Voltage
Axis Title
2.0
1.8
2nd line
V
GS(th)
(V)
1.6
1.4
1.2
1.0
0.8
-50
-25
0
25
50
75
100 125 150
T
J
- Temperature (°C)
2nd line
10
I
D
= 250 μA
Axis Title
10000
50
10000
40
1000
1000
2nd line
Power (W)
1st line
2nd line
20
100
10
100
0
0.001
0.01
0.1
1
Time (s)
2nd line
10
100
10
1000
Threshold Voltage
Single Pulse Power, Junction-to-Ambient
Axis Title
1000
I
D(ON)
Limited
Limited by R
DS(on) (1)
I
DM
Limited
10000
100
2nd line
I
D
- Drain Current (A)
100 μs
1 ms
1000
1st line
2nd line
10
1
10 ms
100 ms
100
1s
10 s
DC
0.1
T
A
= 25 °C
Single pulse
0.01
0.01
(1)
10
0.1
1
10
100
V
DS
- Drain-to-Source Voltage (V)
V
GS
> minimum V
GS
at which R
DS(on)
is specified
Safe Operating Area, Junction-to-Ambient
S17-1735 Rev. A, 20-Nov-17
Document Number: 75978
5
For technical questions, contact:
pmostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
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