d. Maximum under steady state conditions is 85 °C/W.
Document Number: 66587
S10-1044-Rev. A, 03-May-10
www.vishay.com
1
t
≤
10 s
Steady State
Symbol
R
thJA
R
thJF
Typical
38
20
Maximum
50
25
Unit
°C/W
Si4666DY
Vishay Siliconix
SPECIFICATIONS
T
J
= 25 °C, unless otherwise noted
Parameter
Static
Drain-Source Breakdown Voltage
V
DS
Temperature Coefficient
V
GS(th)
Temperature Coefficient
Gate-Source Threshold Voltage
Gate-Source Leakage
Zero Gate Voltage Drain Current
On-State Drain Current
a
Drain-Source On-State
Resistance
a
V
DS
ΔV
DS
/T
J
ΔV
GS(th)
/T
J
V
GS(th)
I
GSS
I
DSS
I
D(on)
R
DS(on)
g
fs
C
iss
C
oss
C
rss
Q
g
Q
gs
Q
gd
R
g
t
d(on)
t
r
t
d(off)
t
f
t
d(on)
t
r
t
d(off)
t
f
I
S
I
SM
V
SD
t
rr
Q
rr
t
a
t
b
I
F
= 5 A, dI/dt = 100 A/µs, T
J
= 25 °C
I
S
= 5 A
0.71
16
6
7
9
T
C
= 25 °C
V
DD
= 10 V, R
L
= 1
Ω
I
D
≅
10 A, V
GEN
= 10 V, R
g
= 1
Ω
V
DD
= 10 V, R
L
= 1
Ω
I
D
≅
10 A, V
GEN
= 4.5 V, R
g
= 1
Ω
f = 1 MHz
0.2
V
DS
= 10 V, V
GS
= 10 V, I
D
= 10 A
V
DS
= 10 V, V
GS
= 4.5 V, I
D
= 10 A
V
DS
= 10 V, V
GS
= 0 V, f = 1 MHz
V
GS
= 0 V, I
D
= 250 µA
I
D
= 250 µA
V
DS
= V
GS
, I
D
= 250 µA
V
DS
= 0 V, V
GS
= ± 12 V
V
DS
= 25 V, V
GS
= 0 V
V
DS
= 25 V, V
GS
= 0 V, T
J
= 55 °C
V
DS
≥
5 V, V
GS
= 4.5 V
V
GS
= 10 V, I
D
= 10 A
V
GS
= 4.5 V, I
D
= 8 A
V
GS
= 2.5 V, I
D
= 6 A
Forward Transconductance
a
Dynamic
b
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Gate Resistance
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Drain-Source Body Diode Characteristics
Continuous Source-Drain Diode Current
Pulse Diode Forward
Body Diode Voltage
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
Reverse Recovery Fall Time
Reverse Recovery Rise Time
Current
a
4.5
40
1.1
32
12
A
V
ns
nC
ns
1145
236
107
22.4
10.7
1.9
2.2
0.6
13
12
27
10
10
11
21
8
1.2
26
24
50
20
20
22
40
16
ns
Ω
34
16
nC
pF
V
DS
= 10 V, I
D
= 10 A
20
0.0083
0.0091
0.0115
55
0.010
0.011
0.014
S
Ω
0.6
25
24
- 3.7
1.5
± 100
1
10
V
mV/°C
V
nA
µA
A
Symbol
Test Conditions
Min.
Typ.
Max.
Unit
Notes:
a. Pulse test; pulse width
≤
300 µs, duty cycle
≤
2 %.
b. Guaranteed by design, not subject to production testing.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
www.vishay.com
2
Document Number: 66587
S10-1044-Rev. A, 03-May-10
Si4666DY
Vishay Siliconix
TYPICAL CHARACTERISTICS
25 °C, unless otherwise noted
40
V
GS
= 10 V thru 2 V
32
I
D
- Drain Current (A)
V
GS
= 1 V
I
D
- Drain Current (A)
8
10
24
6
T
C
= 25 °C
4
16
8
2
T
C
= 125 °C
T
C
= - 55 °C
0
0.0
0.5
1.0
1.5
2.0
2.5
0
0.0
0.6
1.2
1.8
2.4
3.0
V
DS
- Drain-to-Source Voltage (V)
V
GS
- Gate-to-Source Voltage (V)
Output Characteristics
0.015
1600
Transfer Characteristics
R
DS(on)
- On-Resistance (Ω)
0.013
C - Capacitance (pF)
V
GS
= 2.5 V
0.011
V
GS
= 4.5 V
0.009
V
GS
= 10 V
0.007
1280
C
iss
960
640
C
oss
320
C
rss
0.005
0
8
16
24
32
40
0
0
5
10
15
20
I
D
- Drain Current (A)
V
DS
- Drain-to-Source Voltage (V)
On-Resistance vs. Drain Current and Gate Voltage
10
I
D
= 10 A
V
GS
- Gate-to-Source Voltage (V)
8
V
DS
= 10 V
6
V
DS
= 5 V
4
V
DS
= 15 V
R
DS(on)
- On-Resistance
1.5
1.7
I
D
= 10 A
Capacitance
V
GS
= 10 V
(Normalized)
1.3
V
GS
= 2.5 V
1.1
2
0.9
0
0
5
10
15
20
25
0.7
- 50
- 25
0
25
50
75
100
125
150
Q
g
- Total Gate Charge (nC)
T
J
- Junction Temperature (°C)
Gate Charge
On-Resistance vs. Junction Temperature
Document Number: 66587
S10-1044-Rev. A, 03-May-10
www.vishay.com
3
Si4666DY
Vishay Siliconix
TYPICAL CHARACTERISTICS
25 °C, unless otherwise noted
100
0.040
I
D
= 10 A
R
DS(on)
- On-Resistance (Ω)
10
I
S
- Source Current (A)
T
J
= 150 °C
1
T
J
= 25 °C
0.1
0.032
0.024
0.016
T
J
= 125 °C
T
J
= 25 °C
0.01
0.008
0.001
0.0
0.000
0.2
0.4
0.6
0.8
1.0
1.2
0
2
4
6
8
10
V
SD
- Source-to-Drain Voltage (V)
V
GS
- Gate-to-Source Voltage (V)
Source-Drain Diode Forward Voltage
0.3
80
On-Resistance vs. Gate-to-Source Voltage
0.1
V
GS(th)
Variance (V)
64
I
D
= 5 mA
- 0.3
I
D
= 250 μA
- 0.5
Power (W)
- 0.1
48
32
16
- 0.7
- 50
- 25
0
25
50
75
100
125
150
0
0.001
0.01
0.1
Time (s)
1
10
T
J
- Temperature (°C)
Threshold Voltage
100
Limited by R
DS(on)
*
I
D
- Drain Current (A)
10
Single Pulse Power, Junction-to-Ambient
1 ms
1
10 ms
100 ms
1s
0.1
T
A
= 25 °C
Single Pulse
0.01
0.01
BVDSS Limited
10 s
DC
0.1
1
10
100
V
DS
- Drain-to-Source Voltage (V)
* V
GS
> minimum V
GS
at which R
DS(on)
is specified
Safe Operating Area, Junction-to-Ambient
www.vishay.com
4
Document Number: 66587
S10-1044-Rev. A, 03-May-10
Si4666DY
Vishay Siliconix
TYPICAL CHARACTERISTICS
25 °C, unless otherwise noted
20
16
I
D
- Drain Current (A)
12
8
4
0
0
25
50
75
100
125
150
T
C
- Case Temperature (°C)
Current Derating*
6.0
2.0
4.8
1.6
Power (W)
2.4
Power (W)
0
25
50
75
100
125
150
3.6
1.2
0.8
1.2
0.4
0.0
0.0
0
25
50
75
100
125
150
T
C
- Case Temperature (°C)
T
A
- Ambient Temperature (°C)
Power, Junction-to-Foot
Power, Junction-to-Ambient
* The power dissipation P
D
is based on T
J(max)
= 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper
dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package
京公网安备 11010802033920号
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved
电子工程世界
