VS-8ETX06-M3
www.vishay.com
Vishay Semiconductors
Hyperfast Rectifier, 8 A FRED Pt
®
FEATURES
2
• Hyperfast recovery time
• Benchmark ultra low forward voltage drop
• 175 °C operating junction temperature
1
3
• Low leakage current
2L TO-220AC
Base
cathode
2
• Designed and qualified according to JEDEC
®
-JESD 47
• Material categorization: for definitions of compliance
please see
www.vishay.com/doc?99912
DESCRIPTION / APPLICATIONS
State of the art hyperfast recovery rectifiers designed with
optimized performance of forward voltage drop, hyperfast
recover time, and soft recovery.
1
Cathode
3
Anode
The planar structure and the platinum doped life time control
guarantee the best overall performance, ruggedness and
reliability characteristics.
8A
600 V
1.4 V
15 ns
175 °C
2L TO-220AC
Single
PRIMARY CHARACTERISTICS
I
F(AV)
V
R
V
F
at I
F
t
rr
(typ.)
T
J
max.
Package
Circuit configuration
These devices are intended for use in PFC boost stage in the
AC/DC section of SMPS, inverters or as freewheeling
diodes.
Their extremely optimized stored charge and low recovery
current minimize the switching losses and reduce over
dissipation in the switching element and snubbers.
ABSOLUTE MAXIMUM RATINGS
PARAMETER
Repetitive peak reverse voltage
Average rectified forward current
Non-repetitive peak surge current
Repetitive peak forward current
Operating junction and storage temperatures
SYMBOL
V
RRM
I
F(AV)
I
FSM
I
FM
T
J
, T
Stg
T
C
= 143 °C
T
J
= 25 °C
TEST CONDITIONS
VALUES
600
8
110
18
-65 to +175
°C
A
UNITS
V
ELECTRICAL SPECIFICATIONS
(T
J
= 25 °C unless otherwise specified)
PARAMETER
Breakdown voltage,
blocking voltage
Forward voltage
Reverse leakage current
Junction capacitance
Series inductance
SYMBOL
V
BR
,
V
R
V
F
I
R
C
T
L
S
I
R
= 100 μA
I
F
= 8 A
I
F
= 8 A, T
J
= 150 °C
V
R
= V
R
rated
T
J
= 150 °C, V
R
= V
R
rated
V
R
= 600 V
Measured lead to lead 5 mm from package body
TEST CONDITIONS
MIN.
600
-
-
-
-
-
-
TYP.
-
2.3
1.4
0.3
35
17
8.0
MAX.
-
3.0
1.7
50
500
-
-
μA
pF
nH
V
UNITS
Revision: 23-Nov-17
Document Number: 96179
1
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
VS-8ETX06-M3
www.vishay.com
Vishay Semiconductors
DYNAMIC RECOVERY CHARACTERISTICS
(T
C
= 25 °C unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
I
F
= 1 A, dI
F
/dt = 100 A/μs, V
R
= 30 V
Reverse recovery time
t
rr
I
F
= 8 A, dI
F
/dt = 100 A/μs, V
R
= 30 V
T
J
= 25 °C
T
J
= 125 °C
Peak recovery current
Reverse recovery charge
Reverse recovery time
Peak recovery current
Reverse recovery charge
I
RRM
Q
rr
t
rr
I
RRM
Q
rr
T
J
= 125 °C
T
J
= 25 °C
T
J
= 125 °C
T
J
= 25 °C
T
J
= 125 °C
I
F
= 8 A
dI
F
/dt = 600 A/μs
V
R
= 390 V
I
F
= 8 A
dI
F
/dt = 200 A/μs
V
R
= 390 V
MIN.
-
-
-
-
-
-
-
-
-
-
-
TYP.
15
16
17
40
2.3
4.5
20
100
31
12
195
MAX.
19
24
-
-
-
-
-
-
-
-
-
A
nC
ns
A
nC
ns
UNITS
THERMAL - MECHANICAL SPECIFICATIONS
PARAMETER
Maximum junction and storage
temperature range
Thermal resistance,
junction-to-case
Thermal resistance,
junction-to-ambient per leg
Thermal resistance,
case-to-heatsink
Weight
Mounting torque
Marking device
Case style 2L TO-220AC
SYMBOL
T
J
, T
Stg
R
thJC
R
thJA
R
thCS
Typical socket mount
Mounting surface, flat, smooth, and greased
TEST CONDITIONS
MIN.
-65
-
-
-
-
-
6.0
(5.0)
TYP.
-
1.4
-
0.5
2.0
0.07
-
MAX.
175
2
70
-
-
-
12
(10)
8ETX06
g
oz.
kgf · cm
(lbf · in)
UNITS
°C
°C/W
I
F
- Instantaneous Forward Current (A)
100
1000
T
J
= 175 °C
I
R
- Reverse Current (µA)
100
10
1
0.1
0.01
0.001
0.0001
T
J
= 150 °C
T
J
= 125 °C
T
J
= 100 °C
10
1
T
J
= 175 °C
T
J
= 150 °C
T
J
= 25 °C
T
J
= 25 °C
0.1
0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
4.5
0
100
200
300
400
500
600
V
F
- Forward Voltage Drop (V)
Fig. 1 - Typical Forward Voltage Drop Characteristics
V
R
- Reverse Voltage (V)
Fig. 2 - Typical Values of Reverse Current vs. Reverse Voltage
Revision: 23-Nov-17
Document Number: 96179
2
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
VS-8ETX06-M3
www.vishay.com
1000
Vishay Semiconductors
C
T
- Junction Capacitance (pF)
100
T
J
= 25 °C
10
0
100
200
300
400
500
600
V
R
- Reverse Voltage (V)
Fig. 3 - Typical Junction Capacitance vs. Reverse Voltage
Z
thJC
- Thermal Impedance (°C/W)
10
1
P
DM
0.1
Single pulse
(thermal resistance)
0.01
0.00001
0.0001
D = 0.50
D = 0.20
D = 0.10
D = 0.05
D = 0.02
D = 0.01
0.001
0.01
t
1
t
2
Notes:
1. Duty factor D = t
1
/t
2
.
2. Peak T
J
= P
DM
x Z
thJC
+ T
C
0.1
.
1
t
1
- Rectangular Pulse Duration (s)
Fig. 4 - Maximum Thermal Impedance Z
thJC
Characteristics
180
20
18
Allowable Case Temperature (°C)
170
Average Power Loss (W)
16
14
12
10
8
6
4
DC
D = 0.01
D = 0.02
D = 0.05
D = 0.1
D = 0.2
D = 0.5
RMS limit
160
DC
150
140
130
See note (1)
120
0
2
4
6
8
10
12
Square wave (D = 0.50)
Rated V
R
applied
2
0
0
2
4
6
8
10
12
14
I
F(AV)
(A) Average Forward Current
Fig. 5 - Maximum Allowable Case Temperature vs.
Average Forward Current
Note
(1)
Formula used: T = T - (Pd + Pd
C
J
REV
) x R
thJC
;
Pd = forward power loss = I
F(AV)
x V
FM
at (I
F(AV)
/D) (see fig. 5);
Pd
REV
= inverse power loss = V
R1
x I
R
(1 - D); I
R
at V
R1
= rated V
R
I
F(AV)
- Average Forward Current (A)
Fig. 6 - Forward Power Loss Characteristics
Revision: 23-Nov-17
Document Number: 96179
3
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
VS-8ETX06-M3
www.vishay.com
Vishay Semiconductors
300
250
V
R
= 390 V
T
J
= 125 °C
T
J
= 25 °C
50
40
I
F
= 8 A
I
F
= 16 A
200
Q
rr
(nC)
t
rr
(ns)
30
V
R
= 390 V
T
J
= 125 °C
T
J
= 25 °C
I
F
= 16 A
150
100
I
F
= 16 A
I
F
= 8 A
20
I
F
= 16 A
50
I
F
= 8 A
I
F
= 8 A
10
100
1000
0
100
1000
dI
F
/dt (A/µs)
Fig. 7 - Typical Reverse Recovery Time vs. dI
F
/dt
dI
F
/dt (A/µs)
Fig. 8 - Typical Stored Charge vs. dI
F
/dt
(3)
I
F
0
t
rr
t
a
t
b
Q
rr
(2)
(4)
I
RRM
0.5 I
RRM
di
(rec)M
/dt
(5)
0.75 I
RRM
(1)
di
F
/dt
(1) di
F
/dt - rate of change of current
through zero crossing
(2) I
RRM
- peak reverse recovery current
(3) t
rr
- reverse recovery time measured
from zero crossing point of negative
going I
F
to point where a line passing
through 0.75 I
RRM
and 0.50 I
RRM
extrapolated to zero current.
(4)
Q
rr
- area under curve defined by t
rr
and I
RRM
Q
rr
=
t
rr
x I
RRM
2
(5) di
(rec)M
/dt - peak rate of change of
current during t
b
portion of t
rr
Fig. 9 - Reverse Recovery Waveform and Definitions
Revision: 23-Nov-17
Document Number: 96179
4
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
VS-8ETX06-M3
www.vishay.com
ORDERING INFORMATION TABLE
Device code
Vishay Semiconductors
VS-
1
1
2
3
4
5
6
7
-
-
-
-
-
-
-
8
2
E
3
T
4
X
5
06
6
-M3
7
Vishay
Semiconductors
product
Current rating (8 = 8 A)
E =
single
T = TO-220, D
2
PAK (TO-263AB)
X = hyperfast rectifier
Voltage rating (06 = 600 V)
Environmental digit:
-M3 = halogen-free, RoHS-compliant, and termination lead (Pb)-free
ORDERING INFORMATION
(Example)
PREFERRED P/N
VS-8ETX06-M3
QUANTITY PER T/R
50
MINIMUM ORDER QUANTITY
1000
PACKAGING DESCRIPTION
Antistatic plastic tube
LINKS TO RELATED DOCUMENTS
Dimensions
Part marking information
www.vishay.com/doc?96156
www.vishay.com/doc?95391
Revision: 23-Nov-17
Document Number: 96179
5
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
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