• Material categorization: For definitions of compliance
please see
www.vishay.com/doc?99912
PowerPAK SC-75-6L-Single
1
D
2
D
3
6
D
5
D
S
4
S
G
APPLICATIONS
• DC/DC Converters
• Full-Bridge Converters
• For Power Bricks and POL Power
Marking Code
D
1.60 mm
1.60 mm
AJX
Part # code
XXX
Lot Traceability
and Date code
G
S
N-Channel MOSFET
Ordering Information:
SiB456DK-T1-GE3 (Lead (Pb)-free and Halogen-free)
ABSOLUTE MAXIMUM RATINGS
(T
A
= 25 °C, unless otherwise noted)
Parameter
Drain-Source Voltage
Gate-Source Voltage
T
C
= 25 °C
T
C
= 70 °C
T
A
= 25 °C
T
A
= 70 °C
T
C
= 25 °C
T
A
= 25 °C
L = 0.1 mH
T
C
= 25 °C
T
C
= 70 °C
T
A
= 25 °C
T
A
= 70 °C
Symbol
V
DS
V
GS
Limit
100
± 20
6.3
5
2.7
b, c
2.2
b, c
7
6.3
2
b, c
2.4
0.29
13
8.4
2.4
b, c
1.6
b, c
- 55 to 150
260
Unit
V
Continuous Drain Current (T
J
= 150 °C)
I
D
Pulsed Drain Current (t = 300 μs)
Continuous Source-Drain Diode Current
Single Pulse Avalanche Current
Single Pulse Avalanche Energy
I
DM
I
S
I
AS
E
AS
A
mJ
Maximum Power Dissipation
P
D
W
Operating Junction and Storage Temperature Range
Soldering Recommendations (Peak Temperature)
d, e
T
J
, T
stg
°C
THERMAL RESISTANCE RATINGS
Parameter
Maximum
Junction-to-Ambient
b, f
t
5s
Steady State
Maximum Junction-to-Case (Drain)
Symbol
R
thJA
R
thJC
Typical
41
7.5
Maximum
51
9.5
Unit
°C/W
Notes
a. T
C
= 25 °C.
b. Surface mounted on 1" x 1" FR4 board.
c. t = 5 s.
d. See solder profile (www.vishay.com/doc?73257). The PowerPAK SC-75 is a leadless package. The end of the lead terminal is exposed
copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed
and is not required to ensure adequate bottom side solder interconnection.
e. Rework conditions: manual soldering with a soldering iron is not recommended for leadless components.
f. Maximum under steady state conditions is 105 °C/W.
S12-1133-Rev. A, 21-May-12
Document Number: 62715
1
For technical questions, contact:
pmostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
New Product
SiB456DK
www.vishay.com
Vishay Siliconix
Symbol
V
DS
V
DS
/T
J
V
GS(th)
/T
J
V
GS(th)
I
GSS
I
DSS
I
D(on)
R
DS(on)
g
fs
C
iss
C
oss
C
rss
Q
g
Q
gs
Q
gd
R
g
t
d(on)
t
r
t
d(off)
t
f
t
d(on)
t
r
t
d(off)
t
f
I
S
I
SM
V
SD
t
rr
Q
rr
t
a
t
b
I
F
= 2.2 A, dI/dt = 100 A/μs, T
J
= 25 °C
I
S
= 2.2 A, V
GS
= 0 V
0.9
25
20
18
7
T
C
= 25 °C
V
DD
= 50 V, R
L
= 23
I
D
2.2 A, V
GEN
= 10 V, R
g
= 1
V
DD
= 50 V, R
L
= 23
I
D
2.2 A, V
GEN
= 4.5 V, R
g
= 1
f = 1 MHz
1.3
V
DS
= 50 V, V
GS
= 10 V, I
D
= 2.7 A
V
DS
= 50 V, V
GS
= 4.5 V, I
D
= 2.7 A
V
DS
= 50 V, V
GS
= 0 V, f = 1 MHz
Test Conditions
V
GS
= 0 V, I
D
= 250 μA
I
D
= 250 μA
V
DS
= V
GS
, I
D
= 250 μA
V
DS
= 0 V, V
GS
= ± 20 V
V
DS
= 100 V, V
GS
= 0 V
V
DS
= 100 V, V
GS
= 0 V, T
J
= 55 °C
V
DS
5 V, V
GS
= 10 V
V
GS
= 10 V, I
D
= 1.9 A
V
GS
= 4.5 V, I
D
= 1.5 A
V
DS
= 10 V, I
D
= 1.9 A
6
0.153
0.220
3.7
130
54
10
3.3
1.8
0.7
1
6.5
15
45
11
13
5
11
10
10
13
30
90
20
25
10
20
20
20
6.3
7
1.2
50
40
ns
5
2.7
nC
pF
0.185
0.310
1.6
Min.
100
54
- 4.1
3
± 100
1
10
Typ.
Max.
Unit
V
mV/°C
V
nA
μA
A
S
SPECIFICATIONS
(T
J
= 25 °C, unless otherwise noted)
Parameter
Static
Drain-Source Breakdown Voltage
V
DS
Temperature Coefficient
V
GS(th)
Temperature Coefficient
Gate-Source Threshold Voltage
Gate-Source Leakage
Zero Gate Voltage Drain Current
On-State Drain Current
a
Drain-Source On-State Resistance
a
Forward Transconductance
a
Dynamic
b
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Gate Resistance
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Drain-Source Body Diode Characteristics
Continuous Source-Drain Diode Current
Pulse Diode Forward Current
Body Diode Voltage
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
Reverse Recovery Fall Time
Reverse Recovery Rise Time
A
V
ns
nC
ns
Notes
a. Pulse test; pulse width
300 μs, duty cycle
2 %.
b. Guaranteed by design, not subject to production testing.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
S12-1133-Rev. A, 21-May-12
Document Number: 62715
2
For technical questions, contact:
pmostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
New Product
SiB456DK
www.vishay.com
TYPICAL CHARACTERISTICS
(25 °C, unless otherwise noted)
6
V
GS
= 10 V thru 5 V
5
I
D
- Drain Current (A)
1.6
I
D
- Drain Current (A)
2.0
Vishay Siliconix
4
1.2
3
V
GS
= 4 V
2
0.8
T
C
= 25
°C
1
V
GS
= 3 V
0
0.0
0.5
1.0
1.5
2.0
2.5
3.0
V
DS
- Drain-to-Source Voltage (V)
0.4
T
C
= 125
°C
T
C
= - 55
°C
0.0
0.0
1.0
2.0
3.0
4.0
5.0
V
GS
-
Gate-to-Source
Voltage (V)
Output Characteristics
0.500
200
Transfer Characteristics
0.400
R
DS(on)
- On-Resistance (Ω)
C - Capacitance (pF)
160
C
iss
120
0.300
V
GS
= 4.5 V
C
oss
0.200
V
GS
= 10 V
0.100
80
40
C
rss
0.000
0
1
2
3
4
5
6
0
0
4
8
12
16
20
V
DS
- Drain-to-Source Voltage (V)
I
D
- Drain Current (A)
On-Resistance vs. Drain Current and Gate Voltage
10
V
DS
= 50 V
V
GS
-
Gate-to-Source
Voltage (V)
8
I
D
= 2.7 A
V
DS
= 25 V
6
V
DS
= 80 V
4
R
DS(on)
- On-Resistance
(Normalized)
1.8
Capacitance
V
GS
= 10 V
1.6
I
D
= 1.9 A
1.4
V
GS
= 4.5 V
1.2
1.0
2
0.8
0
0
1
2
3
4
Q
g
- Total
Gate
Charge (nC)
0.6
- 50
- 25
0
25
50
75
100
125
150
T
J
- Junction Temperature (°C)
Gate Charge
S12-1133-Rev. A, 21-May-12
On-Resistance vs. Junction Temperature
Document Number: 62715
3
For technical questions, contact:
pmostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
New Product
SiB456DK
www.vishay.com
TYPICAL CHARACTERISTICS
(25 °C, unless otherwise noted)
100
0.60
Vishay Siliconix
0.50
R
DS(on)
- On-Resistance (Ω)
I
S
-
Source
Current (A)
I
D
= 1.9 A
10
T
J
= 150
°C
0.40
0.30
T
J
= 25
°C
1
T
J
= 125
°C
0.20
T
J
= 25
°C
0.10
0.1
0.0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
V
SD
-
Source-to-Drain
Voltage (V)
0.00
0
2
4
6
8
10
V
GS
-
Gate-to-Source
Voltage (V)
Soure-Drain Diode Forward Voltage
2.8
On-Resistance vs. Gate-to-Source Voltage
20
2.6
15
V
GS(th)
(V)
Power (W)
75
100
125
150
2.4
10
2.2
I
D
= 250 μA
2.0
5
1.8
- 50
- 25
0
25
50
0
0.001
0.01
0.1
T
J
- Temperature (°C)
1
Pulse (s)
10
100
1000
Threshold Voltage
Single Pulse Power, Junction-to-Ambient
10
Limited by R
DS(on)
*
1
I
D
- Drain Current (A)
100 μs
1 ms
0.1
T
A
= 25
°C
0.01
BVDSS Limited
0.001
0.1
10 ms
100 ms
1
s
10
s
DC
1
10
100
V
DS
- Drain-to-Source Voltage (V)
* V
GS
> minimum V
GS
at which R
DS(on)
is
specified
1000
Safe Operating Area, Junction-to-Ambient
S12-1133-Rev. A, 21-May-12
Document Number: 62715
4
For technical questions, contact:
pmostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
New Product
SiB456DK
www.vishay.com
TYPICAL CHARACTERISTICS
(25 °C, unless otherwise noted)
8
Vishay Siliconix
15
12
6
I
D
- Drain Current (A)
4
Power (W)
0
25
50
75
100
125
150
9
6
2
3
0
0
25
50
75
100
125
T
C
- Case Temperature (°C)
150
T
A
- Ambient Temperature (°C)
Current Derating*
Power Derating
* The power dissipation P
D
is based on T
J(max.)
= 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper dissipation limit for cases
where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package limit.
S12-1133-Rev. A, 21-May-12
Document Number: 62715
5
For technical questions, contact:
pmostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARM技术
京公网安备 11010802033920号
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved
电子工程世界
