• Material categorization: for definitions of compliance
please see
www.vishay.com/doc?99912
Marking code:
BR
PRODUCT SUMMARY
V
DS
(V)
R
DS(on)
max. () at V
GS
= -4.5 V
R
DS(on)
max. () at V
GS
= -2.5 V
R
DS(on)
max. () at V
GS
= -1.8 V
R
DS(on)
max. () at V
GS
= -1.5 V
Q
g
typ. (nC)
I
D
(A)
a
Configuration
-12
0.0135
0.0194
0.0344
0.0710
31
-12
Single
ORDERING INFORMATION
Package
Lead (Pb)-free and halogen-free
PowerPAK SC-70
SiA447DJ-T4-GE3
SiA447DJ-T1-GE3
ABSOLUTE MAXIMUM RATINGS
(T
A
= 25 °C, unless otherwise noted)
PARAMETER
Drain-source voltage
Gate-source voltage
Continuous drain current (T
J
= 150 °C)
Pulsed drain current (t = 300 μs)
Continuous source-drain diode current
T
C
= 25 °C
T
A
= 25 °C
T
C
= 25 °C
T
C
= 70 °C
T
A
= 25 °C
T
A
= 70 °C
T
C
= 25 °C
T
C
= 70 °C
T
A
= 25 °C
T
A
= 70 °C
SYMBOL
V
DS
V
GS
I
D
I
DM
I
S
LIMIT
-12
±8
-12
a
-12
a
-12
a, b, c
-10
b, c
-50
-12
a
-2.9
b, c
19
12
3.5
b, c
2.2
b, c
-55 to +150
260
UNIT
V
Maximum power dissipation
Operating junction and storage temperature range
Soldering recommendations (peak temperature)
d, e
THERMAL RESISTANCE RATINGS
PARAMETER
SYMBOL
TYPICAL
MAXIMUM
UNIT
b, f
t
5s
R
thJA
28
36
Maximum junction-to-ambient
°C/W
Maximum junction-to-case (drain)
Steady state
R
thJC
5.3
6.5
Notes
a. Package limited
b. Surface mounted on 1" x 1" FR4 board
c. t = 5 s
d. See solder profile
(www.vishay.com/doc?73257).
The PowerPAK SC-70 is a leadless package. The end of the lead terminal is exposed
copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed
and is not required to ensure adequate bottom side solder interconnection
e. Rework conditions: manual soldering with a soldering iron is not recommended for leadless components
f. Maximum under steady state conditions is 80 °C/W
S12-1141-Rev. B, 21-May-12
Document Number: 63774
1
For technical questions, contact:
pmostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
2.
05
m
m
APPLICATIONS
• Providing low voltage drop in smart
phones, tablet PCs, mobile computing:
- Battery switches
G
- Battery management
- Load switches
S
D
P-Channel MOSFET
A
P
D
T
J
, T
stg
W
°C
SiA447DJ
www.vishay.com
Vishay Siliconix
SYMBOL
V
DS
V
DS
/T
J
V
GS(th)
/T
J
V
GS(th)
I
GSS
I
DSS
I
D(on)
TEST CONDITIONS
V
GS
= 0, I
D
= -250 μA
I
D
= -250 μA
V
DS
= V
GS
, I
D
= -250 μA
V
DS
= 0 V, V
GS
= ± 8 V
V
DS
= -12 V, V
GS
= 0 V
V
DS
= -12 V, V
GS
= 0 V, T
J
= 55 °C
V
DS
-5 V, V
GS
= -4.5 V
V
GS
= -4.5 V, I
D
= -7 A
V
GS
= -2.5 V, I
D
= -5 A
V
GS
= -1.8 V, I
D
= -3 A
V
GS
= -1.5 V, I
D
= -1 A
V
DS
= -6 V, I
D
= -7 A
MIN.
-12
-
-
-0.4
-
-
-
-10
-
-
-
-
-
-
V
DS
= -6 V, V
GS
= 0 V, f = 1 MHz
V
DS
= -6 V, V
GS
= -8 V, I
D
= -13 A
V
DS
= -6 V, V
GS
= -4.5 V, I
D
= -13 A
f = 1 MHz
V
DD
= -6 V, R
L
= 0.6
I
D
-10 A, V
GEN
= -4.5 V, R
g
= 1
-
-
-
-
-
-
0.8
-
-
-
-
-
V
DD
= -6 V, R
L
= 0.6
I
D
-10 A, V
GEN
= -8 V, R
g
= 1
-
-
-
T
C
= 25 °C
I
S
= -10 A, V
GS
= 0 V
I
F
= -10 A, di/dt = 100 A/μs,
T
J
= 25 °C
-
-
-
-
-
-
-
TYP.
-
-7
3
-
-
-
-
-
0.0110
0.0150
0.0230
0.0400
35
2880
590
585
52
31
4.2
7.8
4.3
30
30
60
25
12
10
65
20
-
-
-0.8
25
7.5
8
17
MAX.
-
-
-
-0.85
± 100
-1
-10
-
0.0135
0.0194
0.0344
0.0710
-
-
-
-
80
47
-
-
8.6
60
60
120
50
25
20
130
40
-12
-50
-1.2
50
15
-
-
ns
nC
pF
S
UNIT
V
mV/°C
V
nA
μA
A
SPECIFICATIONS
(T
J
= 25 °C, unless otherwise noted)
PARAMETER
Static
Drain-source breakdown voltage
V
DS
temperature coefficient
V
GS(th)
temperature coefficient
Gate-source threshold voltage
Gate-source leakage
Zero gate voltage drain current
On-state drain current
a
Drain-source on-state resistance
a
R
DS(on)
Forward
transconductance
a
b
g
fs
C
iss
C
oss
C
rss
Q
g
Q
gs
Q
gd
R
g
t
d(on)
t
r
t
d(off)
t
f
t
d(on)
t
r
t
d(off)
t
f
I
S
I
SM
V
SD
t
rr
Q
rr
t
a
t
b
Dynamic
Input capacitance
Output capacitance
Reverse transfer capacitance
Total gate charge
Gate-source charge
Gate-drain charge
Gate resistance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Drain-Source Body Diode Characteristics
Continuous source-drain diode current
Pulse diode forward current
Body diode voltage
Body diode reverse recovery time
Body diode reverse recovery charge
Reverse recovery fall time
Reverse recovery rise time
A
V
ns
nC
ns
Notes
a. Pulse test; pulse width
300 μs, duty cycle
2%
b. Guaranteed by design, not subject to production testing
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability
S12-1141-Rev. B, 21-May-12
Document Number: 63774
2
For technical questions, contact:
pmostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
SiA447DJ
www.vishay.com
TYPICAL CHARACTERISTICS
(25 °C, unless otherwise noted)
50
V
GS
= 5 V thru 2.5 V
40
I
D
- Drain Current (A)
V
GS
= 2 V
30
Vishay Siliconix
10
8
I
D
- Drain Current (A)
6
T
C
= 25
°C
20
4
T
C
= 125
°C
10
V
GS
= 1.5 V
2
T
C
= - 55
°C
0
0.0
0.5
1.0
1.5
2.0
2.5
V
DS
- Drain-to-Source Voltage (V)
3.0
0
0.0
0.5
1.0
1.5
V
GS
-
Gate-to-Source
Voltage (V)
2.0
Output Characteristics
0.10
V
GS
= 1.5 V
0.08
C - Capacitance (pF)
3600
4500
Transfer Characteristics
R
DS(on)
- On-Resistance (Ω)
C
iss
2700
C
oss
1800
C
rss
900
0.06
V
GS
= 1.8 V
0.04
0.02
V
GS
= 2.5 V
0.00
0
8
16
24
I
D
- Drain Current (A)
V
GS
= 4.5 V
32
40
0
0
3
6
9
V
DS
- Drain-to-Source Voltage (V)
12
On-Resistance vs. Drain Current and Gate Voltage
8
R
DS(on)
- On-Resistance (Normalized)
1.4
Capacitance
I
D
= 13 A
V
GS
-
Gate-to-Source
Voltage (V)
6
V
GS
= 4.5 V, 2.5 V; I
D
= 7 A
1.3
1.2
1.1
1.0
0.9
0.8
0.7
- 50
V
GS
= 1.5 V; I
D
= 1 A
V
GS
= 1.8 V; I
D
= 3.3 A
V
DS
= 6 V
V
DS
= 3 V
4
V
DS
= 9.6 V
2
0
0
10
20
30
40
50
60
- 25
0
25
50
75
100
125
150
Q
g
- Total
Gate
Charge (nC)
T
J
- Junction Temperature (°C)
Gate Charge
On-Resistance vs. Junction Temperature
S12-1141-Rev. B, 21-May-12
Document Number: 63774
3
For technical questions, contact:
pmostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
SiA447DJ
www.vishay.com
TYPICAL CHARACTERISTICS
(25 °C, unless otherwise noted)
100
Vishay Siliconix
0.06
I
D
= 7 A
0.05
T
J
= 150
°C
R
DS(on)
- On-Resistance (Ω)
I
S
-
Source
Current (A)
10
0.04
T
J
= 25
°C
1
0.03
0.02
T
J
= 125
°C
T
J
= 25
°C
0.01
0.1
0.0
0.2
0.4
0.6
0.8
1.0
V
SD
-
Source-to-Drain
Voltage (V)
1.2
0.00
0
1
2
3
4
V
GS
-
Gate-to-Source
Voltage (V)
5
Source-Drain Diode Forward Voltage
0.9
On-Resistance vs. Gate-to-Source Voltage
30
0.8
25
0.7
20
Power (W)
125
150
V
GS(th)
(V)
0.6
15
I
D
= 250 μA
0.5
10
0.4
5
0.3
- 50
- 25
0
25
50
75
100
T
J
- Temperature (°C)
0
0.001
0.01
0.1
1
Time (s)
10
100
1000
Threshold Voltage
100
Single Pulse Power, Junction-to-Ambient
Limited by R
DS(on)
*
100 μs
10
I
D
- Drain Current (A)
1 ms
1
10 ms
100 ms
1
s
10
s
DC
T
A
= 25
°C
0.01
0.1
BVDSS Limited
1
10
100
V
DS
- Drain-to-Source Voltage (V)
* V
GS
> minimum V
GS
at which R
DS(on)
is
specified
0.1
Safe Operating Area, Junction-to-Ambient
S12-1141-Rev. B, 21-May-12
Document Number: 63774
4
For technical questions, contact:
pmostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
SiA447DJ
www.vishay.com
TYPICAL CHARACTERISTICS
(25 °C, unless otherwise noted)
35
30
25
20
15
10
5
0
0
25
50
75
100
T
C
- Case Temperature (°C)
125
150
Package Limited
Vishay Siliconix
20
I
D
- Drain Current (A)
Power Dissipation (W)
15
10
5
0
25
50
75
100
125
T
C
- Case Temperature (°C)
150
Current Derating
a
Power Derating
Note
a. The power dissipation P
D
is based on T
J
max. = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper
dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the
package limit
S12-1141-Rev. B, 21-May-12
Document Number: 63774
5
For technical questions, contact:
pmostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
“tensymetry”这个词在《韦伯斯特词典》中没有解释，但在医学界却广为人知。由Tensys Medical Systems公司开发的tensymetry是一种使用生物机械、电气、软件工程的专有组合技术。利用这三种强大的技术，你可在手术室内对病人的心跳血压进行精确、连续、实时和非侵入性测量。 该技术结出的果实就是该公司的T-line Tensymeter产品。该产品线的最新进展是去年...[详细]
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