VS-15ETH06-M3
www.vishay.com
Vishay Semiconductors
Hyperfast Rectifier, 15 A FRED Pt
®
FEATURES
2
• Hyperfast recovery time
• Low forward voltage drop
• 175 °C operating junction temperature
• Low leakage current
1
3
• Designed and qualified according to JEDEC
®
-JESD 47
2L TO-220AC
Base
cathode
2
• Material categorization: for definitions of compliance
please see
www.vishay.com/doc?99912
DESCRIPTION / APPLICATIONS
State of the art hyperfast recovery rectifiers designed with
optimized performance of forward voltage drop, hyperfast
recovery time, and soft recovery.
The planar structure and the platinum doped life time control
guarantee the best overall performance, ruggedness and
reliability characteristics.
These devices are intended for use in PFC boost stage in the
AC/DC section of SMPS, inverters or as freewheeling
diodes.
Their extremely optimized stored charge and low recovery
current minimize the switching losses and reduce over
dissipation in the switching element and snubbers.
1
Cathode
3
Anode
PRIMARY CHARACTERISTICS
I
F(AV)
V
R
V
F
at I
F
t
rr
typ.
T
J
max.
Package
Circuit configuration
15 A
600 V
1.3 V
22 ns
175 °C
2L TO-220AC
Single
ABSOLUTE MAXIMUM RATINGS
PARAMETER
Peak repetitive reverse voltage
Average rectified forward current
Non-repetitive peak surge current
Peak repetitive forward current
Operating junction and storage temperatures
SYMBOL
V
RRM
I
F(AV)
I
FSM
I
FM
T
J
, T
Stg
T
C
= 140 °C
T
J
= 25 °C
TEST CONDITIONS
VALUES
600
15
120
30
-65 to +175
°C
A
UNITS
V
ELECTRICAL SPECIFICATIONS
(T
J
= 25 °C unless otherwise specified)
PARAMETER
Breakdown voltage, blocking voltage
Forward voltage
Reverse leakage current
Junction capacitance
Series inductance
SYMBOL
V
BR
, V
R
V
F
I
R
C
T
L
S
I
R
= 100 μA
I
F
= 15 A
I
F
= 15 A, T
J
= 150 °C
V
R
= V
R
rated
T
J
= 150 °C, V
R
= V
R
rated
V
R
= 600 V
Measured lead to lead 5 mm from package body
TEST CONDITIONS
MIN.
600
-
-
-
-
-
-
TYP.
-
1.8
1.3
0.2
30
20
8.0
MAX.
-
2.2
1.6
50
500
-
-
μA
pF
nH
V
UNITS
Revision: 18-Jun-2019
Document Number: 96174
1
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
VS-15ETH06-M3
www.vishay.com
Vishay Semiconductors
TEST CONDITIONS
I
F
= 1 A, dI
F
/dt = 100 A/μs, V
R
= 30 V
I
F
= 15 A, dI
F
/dt = 100 A/μs, V
R
= 30 V
T
J
= 25 °C
T
J
= 125 °C
T
J
= 25 °C
T
J
= 125 °C
T
J
= 25 °C
T
J
= 125 °C
T
J
= 125 °C
I
F
= 15 A
dI
F
/dt = 800 A/μs
V
R
= 390 V
I
F
= 15 A
dI
F
/dt = 200 A/μs
V
R
= 390 V
MIN.
-
-
-
-
-
-
-
-
-
-
-
TYP.
22
28
29
75
3.5
7
57
300
51
20
580
MAX.
30
35
-
-
-
-
-
-
-
-
-
A
nC
ns
A
nC
ns
UNITS
DYNAMIC RECOVERY CHARACTERISTICS
(T
C
= 25 °C unless otherwise specified)
PARAMETER
SYMBOL
Reverse recovery time
t
rr
Peak recovery current
Reverse recovery charge
Reverse recovery time
Peak recovery current
Reverse recovery charge
I
RRM
Q
rr
t
rr
I
RRM
Q
rr
THERMAL MECHANICAL SPECIFICATIONS
PARAMETER
Maximum junction and storage temperature
range
Thermal resistance, junction-to-case
Thermal resistance, junction-to-ambient per
leg
Thermal resistance, case-to-heatsink
Weight
Mounting torque
Marking device
Case style 2L TO-220AC
SYMBOL
T
J
, T
Stg
R
thJC
R
thJA
R
thCS
Typical socket mount
Mounting surface, flat, smooth,
and greased
TEST CONDITIONS
MIN.
-65
-
-
-
-
-
6.0
(5.0)
TYP.
-
1.0
-
0.5
2.0
0.07
-
MAX.
175
1.3
70
-
-
-
12
(10)
15ETH06
g
oz.
kgf · cm
(lbf · in)
°C/W
UNITS
°C
100
1000
T
J
= 175 °C
I
F
- Instantaneous Forward
Current (A)
I
R
- Reverse Current (µA)
100
T
J
= 150 °C
10
1
0.1
0.01
0.001
0
T
J
= 25 °C
T
J
= 125 °C
T
J
= 100 °C
10
T
J
= 175 °C
T
J
= 150 °C
T
J
= 25 °C
1
0.5
1.0
1.5
2.0
2.5
3.0
0
100
200
300
400
500
600
V
F
- Forward Voltage Drop (V)
Fig. 1 - Typical Forward Voltage Drop Characteristics
V
R
- Reverse Voltage (V)
Fig. 2 - Typical Values of Reverse Current vs. Reverse Voltage
Revision: 18-Jun-2019
Document Number: 96174
2
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
VS-15ETH06-M3
www.vishay.com
1000
Vishay Semiconductors
C
T
- Junction Capacitance (pF)
100
T
J
= 25 °C
10
0
100
200
300
400
500
600
V
R
- Reverse Voltage (V)
Fig. 3 - Typical Junction Capacitance vs. Reverse Voltage
10
Z
thJC
- Thermal Impedance (°C/W)
1
P
DM
t
1
t
2
0.1
Single pulse
(thermal resistance)
0.01
0.00001
0.0001
0.001
D = 0.50
D = 0.20
D = 0.10
D = 0.05
D = 0.02
D = 0.01
0.01
0.1
Notes:
1. Duty factor D = t
1
/t
2
.
2. Peak T
J
= P
DM
x Z
thJC
+ T
C
1
.
10
t
1
- Rectangular Pulse Duration (s)
Fig. 4 - Maximum Thermal Impedance Z
thJC
Characteristics
180
35
Allowable Case Temperature (°C)
160
150
140
130
120
110
0
5
10
Average Power Loss (W)
170
DC
30
25
RMS limit
20
15
10
5
0
DC
D = 0.01
D = 0.02
D = 0.05
D = 0.10
D = 0.20
D = 0.50
Square wave (D = 0.50)
80 % rated V
r
applied
See note (1)
15
20
25
0
5
10
15
20
25
I
F(AV)
- Average Forward Current (A)
Fig. 5 - Maximum Allowable Case Temperature vs.
Average Forward Current
Note
(1)
Formula used: T = T - (Pd + Pd
C
J
REV
) x R
thJC
;
Pd = forward power loss = I
F(AV)
x V
FM
at (I
F(AV)
/D) (see fig. 5);
Pd
REV
= inverse power loss = V
R1
x I
R
(1 - D); I
R
at V
R1
= rated V
R
I
F(AV)
- Average Forward Current (A)
Fig. 6 - Forward Power Loss Characteristics
Revision: 18-Jun-2019
Document Number: 96174
3
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
VS-15ETH06-M3
www.vishay.com
Vishay Semiconductors
I
F
= 30 A
I
F
= 15 A
1000
V
R
= 390 V
T
J
= 125 °C
T
J
= 25 °C
I
F
= 30 A
I
F
= 15 A
100
80
800
Q
rr
(nC)
V
R
= 390 V
T
J
= 125 °C
T
J
= 25 °C
1000
t
rr
(ns)
60
600
40
400
20
200
0
100
0
100
1000
dI
F
/dt (A/µs)
Fig. 7 - Typical Reverse Recovery Time vs. dI
F
/dt
dI
F
/dt (A/µs)
Fig. 8 - Typical Stored Charge vs. dI
F
/dt
(3)
I
F
0
t
rr
t
a
t
b
Q
rr
(2)
(4)
I
RRM
0.5 I
RRM
di
(rec)M
/dt
(5)
0.75 I
RRM
(1)
di
F
/dt
(1) di
F
/dt - rate of change of current
through zero crossing
(2) I
RRM
- peak reverse recovery current
(3) t
rr
- reverse recovery time measured
from zero crossing point of negative
going I
F
to point where a line passing
through 0.75 I
RRM
and 0.50 I
RRM
extrapolated to zero current.
(4)
Q
rr
- area under curve defined by t
rr
and I
RRM
Q
rr
=
t
rr
x I
RRM
2
(5) di
(rec)M
/dt - peak rate of change of
current during t
b
portion of t
rr
Fig. 9 - Reverse Recovery Waveform and Definitions
Revision: 18-Jun-2019
Document Number: 96174
4
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
VS-15ETH06-M3
www.vishay.com
ORDERING INFORMATION TABLE
Device code
Vishay Semiconductors
VS-
15
E
T
H
06
-M3
1
1
2
3
4
5
6
7
-
-
-
-
-
-
-
2
3
4
5
6
7
Vishay
Semiconductors
product
Current rating (15 = 15 A)
E =
single
diode
T = TO-220, D
2
PAK (TO-263AB)
H = hyperfast recovery
Voltage rating (06 = 600 V)
Environmental digit:
-M3 = halogen-free, RoHS-compliant, and termination lead (Pb)-free
ORDERING INFORMATION
(Example)
PREFERRED P/N
VS-15ETH06-M3
QUANTITY PER T/R
50
MINIMUM ORDER QUANTITY
1000
PACKAGING DESCRIPTION
Antistatic plastic tube
LINKS TO RELATED DOCUMENTS
Dimensions
Part marking information
SPICE model
www.vishay.com/doc?96156
www.vishay.com/doc?95391
www.vishay.com/doc?96617
Revision: 18-Jun-2019
Document Number: 96174
5
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
京公网安备 11010802033920号
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved
电子工程世界
