c. See Solder Profile (www.vishay.com/ppg?73257). The PowerPAK 1212-8 is a leadless package. The end of the lead terminal is exposed
copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and
is not required to ensure adequade bottom side solder interconnection.
d. Rework Conditions: manual soldering with a soldering iron is not recommended for leadless components.
e. Package limited.
Document Number: 73771
S11-1142-Rev. C, 13-Jun-11
www.vishay.com
1
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
Si7216DN
Vishay Siliconix
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambient
Maximum Junction-to-Case (Drain)
Notes:
a. Surface mounted on 1" x 1" FR4 board.
b. Maximum under steady state conditions is 94 °C/W.
a, b
t
10 s
Steady State
Symbol
R
thJA
R
thJC
Typical
38
4.5
Maximum
50
6
Unit
°C/W
SPECIFICATIONS
(T
J
= 25 °C, unless otherwise noted)
Parameter
Static
Drain-Source Breakdown Voltage
V
DS
Temperature Coefficient
V
GS(th)
Temperature Coefficient
Gate-Source Threshold Voltage
Gate-Source Leakage
Zero Gate Voltage Drain Current
On-State Drain Current
a
Drain-Source On-State Resistance
a
Forward Transconductance
a
Dynamic
b
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Gate Resistance
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
C
iss
C
oss
C
rss
Q
g
Q
gs
Q
gd
R
g
t
d(on)
t
r
t
d(off)
t
f
t
d(on)
t
r
t
d(off)
t
f
V
DD
= 20 V, R
L
= 4
I
D
5 A, V
GEN
= 10 V, R
g
= 1
V
DD
= 20 V, R
L
= 4
I
D
5 A, V
GEN
= 4.5 V, R
g
= 1
f = 1 MHz
V
DS
= 20 V, V
GS
= 10 V, I
D
= 5 A
V
DS
= 20 V, V
GS
= 4.5 V, I
D
= 5 A
V
DS
= 20 V, V
GS
= 0 V, f = 1 MHz
670
90
50
12.5
5.5
2
2
3.4
16
142
16
7
9
57
19
5
5.1
25
215
25
12
15
90
30
10
ns
19
8.5
nC
pF
V
DS
V
DS
/T
J
V
GS(th)
/T
J
V
GS(th)
I
GSS
I
DSS
I
D(on)
R
DS(on)
g
fs
V
GS
= 0, I
D
= 250 µA
I
D
= 250 µA
V
DS
= V
GS
, I
D
= 250 µA
V
DS
= 0 V, V
GS
= ± 20 V
V
DS
= 40 V, V
GS
= 0 V
V
DS
= 40 V, V
GS
= 0 V, T
J
= 55 °C
V
DS
5
V, V
GS
= 10 V
V
GS
½10
V, I
D
= 5 A
V
GS
½4.5
V, I
D
= 4 A
V
DS
= 15 V, I
D
= 5 A
10
0.025
0.031
25
0.032
0.039
1
40
43
- 5.8
3
± 100
1
10
V
mV/°C
V
nA
µA
A
S
Symbol
Test Conditions
Min.
Typ.
Max.
Unit
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Document Number: 73771
S11-1142-Rev. C, 13-Jun-11
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
Si7216DN
Vishay Siliconix
SPECIFICATIONS
(T
J
= 25 °C, unless otherwise noted)
Parameter
Drain-Source Body Diode Characteristics
Continuous Source-Drain Diode Current
Pulse Diode Forward Current
a
Body Diode Voltage
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
Reverse Recovery Fall Time
Reverse Recovery Rise Time
I
S
I
SM
V
SD
t
rr
Q
rr
t
a
t
b
I
F
= 3.2 A, dI/dt = 100 A/µs,
T
J
= 25 °C
I
S
= 2 A
0.8
50
40
35
15
T
C
= 25 °C
6
20
1.2
75
60
A
V
ns
nC
ns
Symbol
Test Conditions
Min.
Typ.
Max.
Unit
Notes:
a. Pulse test; pulse width
300 µs, duty cycle
2 %
b. Guaranteed by design, not subject to production testing.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
Document Number: 73771
S11-1142-Rev. C, 13-Jun-11
www.vishay.com
3
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
Si7216DN
Vishay Siliconix
TYPICAL CHARACTERISTICS
(25 °C, unless otherwise noted)
20
V
GS
= 10 thru 5
V
16
4
V
2.0
1.6
I
D
- Drain Current (A)
I
D
- Drain Current (A)
12
1.2
T
C
= 125 °C
0.8
8
4
3
V
0
0.0
0.4
25 °C
- 55 °C
0.0
0.3
0.6
0.9
1.2
1.5
0
1
2
3
4
5
V
DS
- Drain-to-Source
Voltage
(V)
V
GS
- Gate-to-Source
Voltage
(V)
Output Characteristics
0.05
1000
Transfer Characteristics
800
R
DS(on)
- On-Resistance (Ω)
0.04
C - Capacitance (pF)
C
iss
600
V
GS
= 4.5
V
0.03
V
GS
= 10
V
400
200
C
oss
0
0
6
12
18
24
30
0
C
rss
8
16
24
32
40
0.02
I
D
- Drain Current (A)
V
DS
- Drain-to-Source
Voltage
(V)
On-Resistance vs. Drain Current and Gate Voltage
10
I
D
= 5 A
1.8
I
D
= 5 A
Capacitance
V
GS
= 10
V
V
GS
- Gate-to-Source
Voltage
(V)
V
DS
= 20
V
6
(Normalized)
V
DS
= 40
V
R
DS(on)
- On-Resistance
8
1.5
V
GS
= 4.5
V
1.2
V
DS
= 30
V
4
0.9
2
0
0
3
6
9
12
15
0.6
- 50
- 25
0
25
50
75
100
125
150
Q
g
- Total Gate Charge (nC)
T
J
- Junction Temperature (°C)
Gate Charge
On-Resistance vs. Junction Temperature
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Document Number: 73771
S11-1142-Rev. C, 13-Jun-11
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
Si7216DN
Vishay Siliconix
TYPICAL CHARACTERISTICS
(25 °C, unless otherwise noted)
100
0.20
10
1
R
DS(on)
- On-Resistance (Ω)
I
S
- Source Current (A)
150 °C
0.16
0.12
0.1
25 C
0.01
0.08
125 °C
0.04
25 °C
0.001
0
0.2
0.4
0.6
0.8
1.0
1.2
0.00
0
1
2
3
4
5
6
7
8
9
10
V
SD
- Source-to-Drain
Voltage
(V)
V
GS
- Gate-to-Source
Voltage
(V)
Source-Drain Diode Forward Voltage
0.4
I
D
= 250
µA
0.2
On-Resistance vs. Gate-to-Source Voltage
50
40
I
D
= 5 mA
Power (W)
- 25
0
25
50
75
100
125
150
V
GS(th)
Variance
(V)
0
30
- 0.2
20
- 0.4
- 0.6
10
- 0.8
- 50
0
0.001
0.01
0.1
1
Time (s)
10
100
1000
T
J
- Temperature (°C)
Threshold Voltage
100
Limited
by
R
DS(on)
*
10
Single Pulse Power, Junction-to-Ambient
1 ms
I
D
- Drain Current (A)
1
10 ms
0.1
T
A
= 25 °C
Single Pulse
0.1
1
10
100 ms
1s
10 s
DC
0.01
100
V
DS
- Drain-to-Source
Voltage
(V)
*
V
GS
> minimum
V
GS
at
which
R
DS(on)
is specified
Safe Operating Area, Junction-to-Ambient
Document Number: 73771
S11-1142-Rev. C, 13-Jun-11
www.vishay.com
5
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
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