c. See solder profile (www.vishay.com/ppg?73257). The PowerPAK 1212-8 is a leadless package. The end of the lead terminal is exposed
copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and
is not required to ensure adequate bottom side solder interconnection.
d. Rework conditions: manual soldering with a soldering iron is not recommended for leadless components.
Document Number: 73478
S11-0648-Rev. C, 11-Apr-11
www.vishay.com
1
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
Si7117DN
Vishay Siliconix
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambient
a, b
Maximum Junction-to-Case (Drain)
Notes:
a. Surface mounted on 1" x 1" FR4 board.
b. Maximum under steady state conditions is 81 °C/W.
t
10 s
Steady State
Symbol
R
thJA
R
thJC
Typical
31
8
Maximum
39
10
Unit
°C/W
SPECIFICATIONS
(T
J
= 25 °C, unless otherwise noted)
Parameter
Static
Drain-Source Breakdown Voltage
V
DS
Temperature Coefficient
V
GS(th)
Temperature Coefficient
Gate-Source Threshold Voltage
Gate-Source Leakage
Zero Gate Voltage Drain Current
On-State Drain Current
a
Drain-Source On-State Resistance
a
Forward Transconductance
a
Dynamic
b
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Gate Resistance
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Drain-Source Body Diode Characteristics
Continuous Source-Drain Diode
Current
Pulse Diode Forward Current
Body Diode Voltage
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
Reverse Recovery Fall Time
Reverse Recovery Rise Time
I
S
I
SM
V
SD
t
rr
Q
rr
t
a
t
b
I
F
= - 0.5 A, dI/dt = 100 A/µs, T
J
= 25 °C
I
S
= - 1 A, V
GS
= 0 V
- 0.7
42
90
35
7
T
C
= 25 °C
- 12
- 12
- 1.2
65
135
V
ns
nC
ns
A
C
iss
C
oss
C
rss
Q
g
Q
gs
Q
gd
R
g
t
d(on)
t
r
t
d(off)
t
f
V
DD
= - 75 V, R
L
= 7.5
I
D
- 1 A, V
GEN
= - 10 V, R
g
= 6
f = 1 MHz
V
DS
= - 75 V, V
GS
= - 10 V, I
D
= - 0.5 A
V
DS
= - 25 V, V
GS
= 0 V, f = 1 MHz
340
30
16
7.7
1.5
2.5
9
7
11
16
11
11
17
25
17
ns
12
nC
510
pF
V
DS
V
DS
/T
J
V
GS(th)
/T
J
V
GS(th)
I
GSS
I
DSS
I
D(on)
R
DS(on)
g
fs
V
GS
= 0 V, I
D
= - 250 µA
I
D
= - 250 µA
V
DS
= V
GS
, I
D
= - 250 µA
V
DS
= 0 V, V
GS
= ± 20 V
V
DS
= - 150 V, V
GS
= 0 V
V
DS
= - 150 V, V
GS
= 0 V, T
J
= 55 °C
V
DS
15
V, V
GS
= - 10 V
V
GS
= - 10 V, I
D
= - 0.5 A
V
GS
= - 6 V, I
D
= - 0.5 A
V
DS
= - 15 V, I
D
= - 0.5 A
- 1.6
1
1.05
2.2
1.2
1.3
- 2.5
- 150
145
6.7
- 4.5
- 100
-1
- 10
V
mV/°C
V
ns
µA
A
S
Symbol
Test Conditions
Min.
Typ.
Max.
Unit
Notes:
a. Pulse test; pulse width
300 µs, duty cycle
2 %.
b. Guaranteed by design, not subject to production testing.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
www.vishay.com
2
Document Number: 73478
S11-0648-Rev. C, 11-Apr-11
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
Si7117DN
Vishay Siliconix
TYPICAL CHARACTERISTICS
(25 °C, unless otherwise noted)
1.6
1.4
1.2
I
D
- Drain Current (A)
1.0
0.8
0.6
0.4
0.2
0.0
0.00
I
D
- Drain Current (A)
V
GS
= 10 V thru 5 V
1.6
1.4
1.2
1.0
T
C
= 125 °C
0.8
0.6
0.4
4V
2.00
4.00
6.00
8.00
10.00
0.2
0.0
0.00
25 °C
- 55 °C
1.20
2.40
3.60
4.80
6.00
V
DS
- Drain-to-Source Voltage (V)
V
GS
- Gate-to-Source Voltage (V)
Output Characteristics
2.0
500
Transfer Characteristics
R
DS(on)
- On-Resistance ()
400
1.5
V
GS
= 6 V
1.0
V
GS
= 10 V
C - Capacitance (pF)
C
iss
300
200
0.5
100
C
oss
0.0
0.00
0
0.20
0.40
0.60
0.80
1.00
1.20
1.40
1.60
0
C
rss
30
60
90
120
150
I
D
- Drain Current (A)
V
DS
- Drain-to-Source Voltage (V)
On-Resistance vs. Drain Current and Gate Voltage
10
I
D
= 0.5 A
V
GS
- Gate-to-Source Voltage (V)
8
R
DS(on)
- On-Resistance
(Normalized)
V
DS
= 75 V
6
V
DS
= 105 V
4
2.0
2.5
I
D
= 0.5 V
Capacitance
V
GS
= 10 V
1.5
1.0
2
0.5
0
0
2
4
6
8
10
Q
g
- Total Gate Charge (nC)
0.0
- 50
- 25
0
25
50
75
100
125
150
T
J
- Junction Temperature (°C)
Gate Charge
Document Number: 73478
S11-0648-Rev. C, 11-Apr-11
On-Resistance vs. Junction Temperature
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3
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
Si7117DN
Vishay Siliconix
TYPICAL CHARACTERISTICS
(25 °C, unless otherwise noted)
10
3.0
2.5
R
DS(on)
- On-Resistance ()
I
S
- Source Current (A)
T
A
= 125 °C
2.0
T
J
= 150 °C
1
25 °C
1.5
T
A
= 25 °C
1.0
0.5
0.1
0.0
0.2
0.4
0.6
0.8
1.0
1.2
0.0
0.00
2.00
4.00
6.00
8.00
10.00
V
SD
- Source-to-Drain Voltage (V)
V
GS
- Gate-to-Source Voltage (V)
Source-Drain Diode Forward Voltage
1.3
I
D
= 250 µA
1.0
V
GS(th)
Variance (V)
40
50
On-Resistance vs. Gate-to-Source Voltage
0.7
Power (W)
30
T
A
= 25 °C
20
0.4
0.1
10
- 0.2
- 0.5
- 50
0
- 25
0
25
50
75
100
125
150
0.01
0.1
1
Time (s)
10
100
1000
T
J
- Temperature (°C)
Threshold Voltage
10
Limited by R
DS(on)
*
I
D
- Drain Current (A)
Single Pulse Power, Junction-to-Ambient
10 µs
1
100 µs
1 ms
0.1
10 ms
100 ms
1s
10 s
100 s
DC
10
100
1000
0.01
T
A
= 25 °C
Single Pulse
0
0.1
1
V
DS
- Drain-to-Source Voltage (V)
* V
GS
> minimum V
GS
at R
DS(on)
is specified
Safe Operating Area at T
A
= 25 °C
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4
Document Number: 73478
S11-0648-Rev. C, 11-Apr-11
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
Si7117DN
Vishay Siliconix
TYPICAL CHARACTERISTICS
(25 °C, unless otherwise noted)
3
14
12
I
D
- Drain Current (A)
10
Power (W)
1
4
2
0
0
25
50
75
100
125
150
0
25
50
75
100
125
150
T
C
- Case Temperature (°C)
8
6
2
T
C
- Case Temperature (°C)
Max Current vs. Case Temperature
Power Derating (Junction-to-Case)
* The power dissipation P
D
is based on T
J(max)
= 175 °C, using junction-to-case thermal resistance, and is more useful in settling the upper
dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package
limit.
Document Number: 73478
S11-0648-Rev. C, 11-Apr-11
www.vishay.com
5
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
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