BPW96B, BPW96C
www.vishay.com
Vishay Semiconductors
Silicon NPN Phototransistor
FEATURES
• Package type: leaded
• Package form: T-1¾
• Dimensions (in mm): Ø 5
• Leads with stand-off
• High photo sensitivity
• High radiant sensitivity
• Suitable for visible and near infrared radiation
94 8391
• Fast response times
• Angle of half sensitivity:
ϕ
= ± 20°
• Compliant to RoHS Directive 2002/95/EC and in
accordance to WEEE 2002/96/EC
Note
**
Please see document “Vishay Material Category Policy”:
www.vishay.com/doc?99902
DESCRIPTION
BPW96 is a silicon NPN phototransistor with high radiant
sensitivity in clear, T-1¾ plastic package. It is sensitive to
visible and near infrared radiation.
APPLICATIONS
• Detector in electronic control and drive circuits
PRODUCT SUMMARY
COMPONENT
BPW96B
BPW96C
I
ca
(mA)
2.5 to 7.5
4.5 to 15
ϕ
(deg)
± 20
± 20
λ
0.1
(nm)
450 to 1080
450 to 1080
Note
• Test condition see table “Basic Characteristics”
ORDERING INFORMATION
ORDERING CODE
BPW96B
BPW96C
Note
• MOQ: minimum order quantity
PACKAGING
Bulk
Bulk
REMARKS
MOQ: 4000 pcs, 4000 pcs/bulk
MOQ: 4000 pcs, 4000 pcs/bulk
PACKAGE FORM
T-1¾
T-1¾
ABSOLUTE MAXIMUM RATINGS
(T
amb
= 25 °C, unless otherwise specified)
PARAMETER
Collector emitter voltage
Emitter collector voltage
Collector current
Collector peak current
Power dissipation
Junction temperature
Operating temperature range
Storage temperature range
Soldering temperature
Thermal resistance junction/ambient
t
≤
3s
Connected with Cu wire, 0.14
mm
2
t
p
/T
≤
0.5, t
p
≤
10 ms
T
amb
≤
47 °C
TEST CONDITION
SYMBOL
V
CEO
V
ECO
I
C
I
CM
P
V
T
j
T
amb
T
stg
T
sd
R
thJA
VALUE
70
5
50
100
150
100
- 40 to + 100
- 40 to + 100
260
350
UNIT
V
V
mA
mA
mW
°C
°C
°C
°C
K/W
Rev. 1.8, 23-Aug-11
Document Number: 81532
1
For technical questions, contact:
detectortechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
BPW96B, BPW96C
www.vishay.com
Vishay Semiconductors
200
P
V
- Power Dissipation (mW)
160
120
R
thJA
80
40
0
0
94 8300
20
40
60
80
T
amb
- Ambient Temperature (°C)
100
Fig. 1 - Power Dissipation Limit vs. Ambient Temperature
BASIC CHARACTERISTICS
(T
amb
= 25 °C, unless otherwise specified)
PARAMETER
Collector emitter breakdown voltage
Collector emitter dark current
Collector emitter capacitance
Angle of half sensitivity
Wavelength
of peak sensitivity
Range of spectral bandwidth
Collector emitter saturation voltage
Turn-on time
Turn-off time
Cut-off frequency
E
e
= 1
mW/cm
2
,
λ
= 950 nm,
I
C
= 0.1 mA
TEST CONDITION
I
C
= 1 mA
V
CE
= 20 V, E = 0
V
CE
= 5 V, f = 1 MHz, E = 0
SYMBOL
V
(BR)CEO
I
CEO
C
CEO
ϕ
λ
p
λ
0.1
V
CEsat
t
on
t
off
f
c
2.0
2.3
180
MIN.
70
1
3
± 20
850
450 to 1080
0.3
200
TYP.
MAX.
UNIT
V
nA
pF
deg
nm
nm
V
μs
μs
kHz
V
S
= 5 V, I
C
= 5 mA, R
L
= 100
Ω
V
S
= 5 V, I
C
= 5 mA, R
L
= 100
Ω
V
S
= 5 V, I
C
= 5 mA, R
L
= 100
Ω
TYPE DEDICATED CHARACTERISTICS
PARAMETER
Collector light current
TEST CONDITION
E
e
= 1 mW/cm
2
,
λ
= 950 nm,
V
CE
= 5 V
PART
BPW96B
BPW96C
SYMBOL
I
ca
I
ca
MIN.
2.5
4.5
TYP.
4.5
8
MAX.
7.5
15
UNIT
mA
mA
Rev. 1.8, 23-Aug-11
Document Number: 81532
2
For technical questions, contact:
detectortechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
BPW96B, BPW96C
www.vishay.com
BASIC CHARACTERISTICS
(T
amb
= 25 °C, unless otherwise specified)
Vishay Semiconductors
10
4
10
I
ca
- Collector Light Current (mA)
I
CEO
- Collector Dark Current (nA)
BPW96B
E
e
= 1 mW/cm²
0.5 mW/cm²
10
3
V
CE
= 20 V
10
2
0.2 mW/cm²
1
0.1 mW/cm²
0.05 mW/cm²
10
1
10
94 8304
20
40
60
80
100
0.1
0.1
94 8297
λ
= 950 nm
1
10
100
V
CE
- Collector Emitter Voltage (V)
T
amb
- Ambient Temperature (°C)
Fig. 1 - Collector Dark Current vs. Ambient Temperature
Fig. 4 - Collector Light Current vs. Collector Emitter Voltage
2.0
C
CEO
- Collector Emitter Capacitance (pF)
10
8
I
ca rel
- Relative Collector Current
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0
20
40
60
80
100
V
CE
= 5 V
E
e
= 1 mW/cm
2
λ
= 950 nm
f = 1 MHz
6
4
2
0
0.1
1
10
100
94 8239
T
amb
- Ambient Temperature (°C)
94 8301
V
CE
- Collector Emitter Voltage (V)
Fig. 2 - Relative Collector Current vs. Ambient Temperature
Fig. 5 - Collector Emitter Capacitance vs. Collector Emitter Voltage
10
I
ca
- Collector Light Current (mA)
BPW96C
1
BPW96B
8
t
on
/t
off
- Turn-on/Turn-off Time (µs)
6
V
CE
= 5 V
R
L
= 100
Ω
λ
= 950 nm
4
0.1
V
CE
= 5 V
t
off
2
t
on
0
λ
= 950 nm
0.01
0.01
0.1
1
10
E
e
- Irradiance (mW/cm
2
)
0
94 8293
2
4
6
8
10
12
14
94 8296
I
C
- Collector Current (mA)
Fig. 3 - Collector Light Current vs. Irradiance
Fig. 6 - Turn-on/Turn-off Time vs. Collector Current
Rev. 1.8, 23-Aug-11
Document Number: 81532
3
For technical questions, contact:
detectortechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
BPW96B, BPW96C
www.vishay.com
Vishay Semiconductors
0°
S (λ)
rel
- Relative Spectral Sensitivity
10°
20°
30°
1.0
S
rel
- Relative Radiant Sensitivity
0.8
0.6
0.4
0.2
0
400
600
800
1000
40°
1.0
0.9
0.8
0.7
50°
60°
70°
80°
0.6
0.4
0.2
0
94 8348
λ
- Wavelength (nm)
94 8299
Fig. 7 - Relative Spectral Sensitivity vs. Wavelength
Fig. 8 - Relative Radiant Sensitivity vs. Angular Displacement
PACKAGE DIMENSIONS
in millimeters
± 0.15
C
E
5.75
Ø5
± 0.15
Chip position
R
± 0.3
± 0.15
2.4
re)
he
sp
5(
± 0.3
35.3
± 0.5
12.3
8.6
7.6
(4.8)
< 0.7
Area not plane
0.8
1
+ 0.2
- 0.1
+ 0.2
- 0.1
1.5
± 0.25
0.5
+ 0.2
- 0.1
+ 0.15
0.63
2.54 nom.
technical drawings
according to DIN
specifications
Drawing-No.: 6.544-5086.01-4
Issue:1; 01.07.96
96 12192
Rev. 1.8, 23-Aug-11
Document Number: 81532
4
For technical questions, contact:
detectortechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
ϕ
- Angular Displacement
Legal Disclaimer Notice
www.vishay.com
Vishay
Disclaimer
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RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE.
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“Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other
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Parameters provided in datasheets and / or specifications may vary in different applications and performance may vary over
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Revision: 08-Feb-17
1
Document Number: 91000