BPW41N
www.vishay.com
Vishay Semiconductors
Silicon PIN Photodiode
FEATURES
• Package type: leaded
• Package form: side view
• Dimensions (in mm): 5 x 4 x 6.8
• Radiant sensitive area (in mm
2
): 7.5
• High radiant sensitivity
• Daylight blocking filter matched with 940 nm
emitters
94 8480
• Fast response times
• Angle of half sensitivity:
ϕ
= ± 65°
• Compliant to RoHS Directive to 2002/95/EC and in
accordance to WEEE 2002/96/EC
Note
**
Please see document “Vishay Material Category Policy”:
www.vishay.com/doc?99902
DESCRIPTION
BPW41N is a PIN photodiode with high speed and high
radiant sensitivity in a black, side view plastic package with
daylight blocking filter. Filter bandwidth is matched with
900 nm to 950 nm IR emitters.
APPLICATIONS
• High speed detector for infrared radiation
• Infrared remote control and free air data transmission
systems, e.g. in combination with TSALxxxx series IR
emitters
PRODUCT SUMMARY
COMPONENT
BPW41N
Note
• Test condition see table “Basic Characteristics”
I
ra
(μA)
45
ϕ
(deg)
± 65
λ
0.5
(nm)
870 to 1050
ORDERING INFORMATION
ORDERING CODE
BPW41N
Note
• MOQ: minimum order quantity
PACKAGING
Bulk
REMARKS
MOQ: 4000 pcs, 4000 pcs/bulk
PACKAGE FORM
Side view
ABSOLUTE MAXIMUM RATINGS
(T
amb
= 25 °C, unless otherwise specified)
PARAMETER
Reverse voltage
Power dissipation
Junction temperature
Operating temperature range
Storage temperature range
Soldering temperature
Thermal resistance junction/ambient
t
≤
5s
Connected with Cu wire, 0.14 mm
2
T
amb
≤
25 °C
TEST CONDITION
SYMBOL
V
R
P
V
T
j
T
amb
T
stg
T
sd
R
thJA
VALUE
60
215
100
- 40 to + 100
- 40 to + 100
260
350
UNIT
V
mW
°C
°C
°C
°C
K/W
Rev. 1.6, 23-Aug-11
Document Number: 81522
1
For technical questions, contact:
detectortechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
BPW41N
www.vishay.com
Vishay Semiconductors
TEST CONDITION
I
R
= 100 μA, E = 0
V
R
= 10 V, E = 0
V
R
= 0 V, f = 1 MHz, E = 0
V
R
= 3 V, f = 1 MHz, E = 0
E
e
= 1
E
e
= 1
E
e
= 1
E
e
mW/cm
2
,
mW/cm
2
,
mW/cm
2
,
λ
= 950 nm
λ
= 950 nm
λ
= 950 nm
SYMBOL
V
(BR)
I
ro
C
D
C
D
V
o
TK
Vo
I
k
TK
Ik
I
ra
43
MIN.
60
2
70
25
350
- 2.6
38
0.1
45
± 65
950
870 to 1050
4x
10
-14
100
100
40
30
TYP.
MAX.
UNIT
V
nA
pF
pF
mV
mV/K
μA
%/K
μA
deg
nm
nm
W/√ Hz
ns
ns
BASIC CHARACTERISTICS
(T
amb
= 25 °C, unless otherwise specified)
PARAMETER
Breakdown voltage
Reverse dark current
Diode capacitance
Open circuit Voltage
Temperature coefficient of V
o
Short circuit current
Temperature coefficient of I
k
Reverse light current
Angle of half sensitivity
Wavelength of peak sensitivity
Range of spectral bandwidth
Noise equivalent power
Rise time
Fall time
V
R
= 10 V,
λ
= 950 nm
V
R
= 10 V, R
L
= 1 kΩ,
λ
= 820 nm
V
R
= 10 V, R
L
= 1 kΩ,
λ
= 820 nm
E
e
= 1 mW/cm
2
,
λ
= 950 nm
= 1 mW/cm
2
,
λ
= 950 nm,
V
R
= 5 V
ϕ
λ
p
λ
0.5
NEP
t
r
t
f
BASIC CHARACTERISTICS
(T
amb
= 25 °C, unless otherwise specified)
1.4
I
ra
- Reverse Light Current (µA)
100
I
ra rel
- Relative Reverse Light Current
1 mW/cm
2
0.5 mW/cm
2
1.2
V
R
= 5
V
λ
= 950 nm
λ
= 950 nm
10
0.2 mW/cm
2
0.1 mW/cm
2
0.05 mW/cm
2
0.02 mW/cm
2
1.0
0.8
0.6
0
20
40
60
80
100
T
amb
- Ambient Temperature (°C)
1
0.1
94 8415
1
10
100
94 8409
V
R
- Reverse
Voltage
(V)
Fig. 1 - Relative Reverse Light Current vs. Ambient Temperature
Fig. 3 - Reverse Light Current vs. Reverse Voltage
1000
80
C
D
- Diode Capacitance (pF)
I
ra
- Reverse Light Current (µA)
100
60
E=0
f = 1 MHz
10
40
1
λ
= 950 nm
V
R
= 5
V
20
0.1
0.01
94 8414
0.1
1
10
0
0.1
948407
1
10
100
E
e
- Irradiance (mW/cm²)
V
R
- Reverse
Voltage
(V)
Fig. 2 - Reverse Light Current vs. Irradiance
Rev. 1.6, 23-Aug-11
Fig. 4 - Diode Capacitance vs. Reverse Voltage
Document Number: 81522
2
For technical questions, contact:
detectortechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
BPW41N
www.vishay.com
Vishay Semiconductors
0°
10°
20°
30°
S (λ)
rel
- Relative Spectral Sensitivity
S
rel
- Relative Radiant Sensitivity
1.2
1.0
0.8
0.6
0.4
0.2
0
750
40°
1.0
0.9
0.8
0.7
50°
60°
70°
80°
0.6
0.4
0.2
0
850
950
1050
1150
94 8406
94 8408
λ
-
Wavelength
(nm)
Fig. 5 - Relative Spectral Sensitivity vs. Wavelength
Fig. 6 - Relative Radiant Sensitivity vs. Angular Displacement
PACKAGE DIMENSIONS
in millimeters
5
± 0.2
± 0.2
A
C
4
Sensitive area
(2.05)
Chip position
± 0.3
± 0.3
19.8
- 0.8
8.9
6.8
< 0.5
< 0.65
Area not plane
0.45
+ 0.01
- 0.05
2.3
± 0.2
2.5 nom.
0.4
+ 0.1
- 0.05
(2.8)
Drawing-No.: 6.544-5108.01-4
Issue:1; 01.07.96
96 12195
technical drawings
according to DIN
specifications
Rev. 1.6, 23-Aug-11
Document Number: 81522
3
For technical questions, contact:
detectortechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
ϕ
- Angular Displacement
Legal Disclaimer Notice
www.vishay.com
Vishay
Disclaimer
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Revision: 08-Feb-17
1
Document Number: 91000