• Material categorization: For definitions of compliance
please see
www.vishay.com/doc?99912
PowerPAK
®
SC-70-6L
Dual
S
2
4
G
2
5
D
1
6
APPLICATIONS
D
1
• Charger Switches and Load Switches for Portable Devices
• DC/DC Converters
S
1
S
2
D
2
mm
.05
2
Top View
1
3
D
2
Bottom View
2
G
1
1
S
1
G
1
G
2
Marking Code:
DP
Ordering Information:
SiA923AEDJ-T1-GE3 (Lead (Pb)-free and Halogen-free)
P-Channel MOSFET
D
1
P-Channel MOSFET
D
2
ABSOLUTE MAXIMUM RATINGS
(T
A
= 25 °C, unless otherwise noted)
PARAMETER
Drain-Source Voltage
Gate-Source Voltage
T
C
= 25 °C
Continuous Drain Current (T
J
= 150 °C)
T
C
= 70 °C
T
A
= 25 °C
T
A
= 70 °C
Pulsed Drain Current (t = 100 μs)
Continuous Source-Drain Diode Current
T
C
= 25 °C
T
A
= 25 °C
T
C
= 25 °C
Maximum Power Dissipation
T
C
= 70 °C
T
A
= 25 °C
T
A
= 70 °C
Operating Junction and Storage Temperature Range
Soldering Recommendations (Peak Temperature)
d,e
T
J
, T
stg
P
D
I
DM
I
S
I
D
SYMBOL
V
DS
V
GS
LIMIT
-20
±8
-4.5
a
-4.5
a
-4.5
a,b,c
-4.5
a,b,c
-15
-4.5
a
-1.6
b,c
7.8
5
1.9
b,c
1.2
b,c
-55 to 150
260
°C
W
A
UNIT
V
THERMAL RESISTANCE RATINGS
PARAMETER
Maximum Junction-to-Ambient
b,f
Maximum Junction-to-Case (Drain)
Notes
a. Package limited.
b. Surface mounted on 1" x 1" FR4 board.
c. t = 5 s.
d. See solder profile (www.vishay.com/doc?73257). The PowerPAK SC-70 is a leadless package. The end of the lead terminal is exposed
copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed
and is not required to ensure adequate bottom side solder interconnection.
e. Rework conditions: Manual soldering with a soldering iron is not recommended for leadless components.
f. Maximum under steady state conditions is 110 °C/W.
S13-2636-Rev. A, 30-Dec-13
Document Number: 62936
1
For technical questions, contact:
pmostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
2.
2.
05
m
m
m
m
SYMBOL
t
5s
Steady State
R
thJA
R
thJC
TYPICAL
52
12.5
MAXIMUM
65
16
UNIT
°C/W
SiA923AEDJ
www.vishay.com
Vishay Siliconix
SPECIFICATIONS
(T
J
= 25 °C, unless otherwise noted)
PARAMETER
Static
Drain-Source Breakdown Voltage
V
DS
Temperature Coefficient
V
GS(th)
Temperature Coefficient
Gate-Source Threshold Voltage
Gate-Source Leakage
Zero Gate Voltage Drain Current
On-State Drain Current
a
SYMBOL
V
DS
V
DS
/T
J
V
GS(th)
/T
J
V
GS(th)
I
GSS
I
DSS
I
D(on)
TEST CONDITIONS
V
GS
= 0 V, I
D
= -250 μA
I
D
= -250 μA
V
DS
= V
GS
, I
D
= -250 μA
V
DS
= 0 V, V
GS
= ± 4.5 V
V
DS
= 0 V, V
GS
= ± 8 V
V
DS
= -20 V, V
GS
= 0 V
V
DS
= -20 V, V
GS
= 0 V, T
J
= 55 °C
V
DS
-5 V, V
GS
= -4.5 V
V
GS
= -4.5 V, I
D
= -3.8 A
V
GS
= -2.5 V, I
D
= -3.3 A
V
GS
= -1.8 V, I
D
= -1 A
V
GS
= -1.5 V, I
D
= -0.5 A
V
DS
= -10 V, I
D
= -3.8 A
MIN.
-20
-
-
-0.4
-
-
-
-
-15
-
-
-
-
-
-
TYP.
-
-15
2.5
-
± 0.3
±3
-
-
-
0.044
0.057
0.075
0.097
11
770
90
81
16.3
9.5
1.4
2.3
5.1
15
16
30
10
7
12
26
10
-
-
-0.9
13
5.5
7.5
5.5
MAX.
-
-
-
-0.9
±3
± 30
-1
-10
-
0.054
0.070
0.104
0.165
-
-
-
-
25
14.5
-
-
10
25
25
45
15
15
20
40
15
-4.5
-15
-1.2
25
12
-
-
UNIT
V
mV/°C
V
μA
A
Drain-Source On-State Resistance
a
R
DS(on)
Forward Transconductance
a
Dynamic
b
g
fs
C
iss
C
oss
C
rss
Q
g
Q
gs
Q
gd
R
g
t
d(on)
t
r
t
d(off)
t
f
t
d(on)
t
r
t
d(off)
t
f
I
S
I
SM
V
SD
t
rr
Q
rr
t
a
t
b
S
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Gate Resistance
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Drain-Source Body Diode Characteristics
Continuous Source-Drain Diode Current
Pulse Diode Forward Current
Body Diode Voltage
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
Reverse Recovery Fall Time
Reverse Recovery Rise Time
V
DS
= -10 V, V
GS
= 0 V, f = 1 MHz
V
DS
= -10 V, V
GS
= -8 V, I
D
= -4.9 A
V
DS
= -10 V, V
GS
= -4.5 V, I
D
= -4.9 A
f = 1 MHz
V
DD
= -10 V, R
L
= 2.6
I
D
-3.9 A, V
GEN
= -4.5 V, R
g
= 1
-
-
-
-
-
-
1
-
-
-
-
-
pF
nC
ns
V
DD
= -10 V, R
L
= 2.6
I
D
-3.9 A, V
GEN
= -8 V, R
g
= 1
-
-
-
T
C
= 25 °C
I
S
= -3.9 A, V
GS
= 0 V
-
-
-
-
-
-
-
A
V
ns
nC
ns
I
F
= -3.9 A, dI/dt = 100 A/μs, T
J
= 25 °C
Notes
a. Pulse test; pulse width
300 μs, duty cycle
2 %.
b. Guaranteed by design, not subject to production testing.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
S13-2636-Rev. A, 30-Dec-13
Document Number: 62936
2
For technical questions, contact:
pmostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
SiA923AEDJ
www.vishay.com
TYPICAL CHARACTERISTICS
(25 °C, unless otherwise noted)
50
10
-1
10
-2
40
I
G
- Gate Current (mA)
10
-3
I
G
- Gate Current (A)
T
J
= 150 °C
10
-4
10
-5
10
-6
10
-7
10
10
-8
0
0
3
6
9
12
15
V
GS
- Gate-to-Source Voltage (V)
10
-9
0
3
6
9
12
15
V
GS
- Gate-to-Source Voltage (V)
T
J
= 25 °C
30
T
J
= 25 °C
20
Vishay Siliconix
Gate Current vs. Gate-to-Source Voltage
15
V
GS
= 5 V thru 2.5 V
12
I
D
- Drain Current (A)
Gate Current vs. Gate-to-Source Voltage
5
V
GS
= 2 V
I
D
- Drain Current (A)
4
9
3
6
V
GS
= 1.5 V
3
V
GS
= 1 V
0
0.0
0.5
1.0
1.5
2.0
2.5
3.0
2
T
C
= 25 °C
1
T
C
= 125 °C
0
0.0
T
C
= - 55 °C
0.3
0.6
0.9
1.2
1.5
V
DS
- Drain-to-Source Voltage (V)
V
GS
-
Gate-to-Source
Voltage (V)
Output Characteristics
0.20
V
GS
= 1.5 V
0.16
C - Capacitance (pF)
Transfer Characteristics
1500
R
DS(on)
- On-Resistance (Ω)
1200
0.12
V
GS
= 1.8 V
0.08
V
GS
= 2.5 V
0.04
V
GS
= 4.5 V
0
0
3
6
9
12
15
900
C
iss
600
300
C
oss
C
rss
0
0
4
8
12
16
20
I
D
- Drain Current (A)
V
DS
- Drain-to-Source Voltage (V)
On-Resistance vs. Drain Current and Gate Voltage
S13-2636-Rev. A, 30-Dec-13
Capacitance
Document Number: 62936
3
For technical questions, contact:
pmostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
SiA923AEDJ
www.vishay.com
TYPICAL CHARACTERISTICS
(25 °C, unless otherwise noted)
8
R
DS(on)
- On-Resistance (Normalized)
Vishay Siliconix
1.5
I
D
= 4.9 A
V
GS
-
Gate-to-Source
Voltage (V)
1.4
1.3
V
GS
= 2.5 V; 4.5 V; I
D
= 3.8 A
V
GS
= 1.8 V; I
D
= 1 A
V
DS
= 10 V
6
V
DS
= 5 V
4
V
DS
= 16 V
1.2
1.1
1.0
0.9
0.8
0.7
- 50
V
GS
= 1.5 V; I
D
= 0.5 A
2
0
0
3
6
9
12
15
18
- 25
0
25
50
75
100
125
150
Q
g
- Total
Gate
Charge (nC)
T
J
- Junction Temperature (°C)
Gate Charge
100
0.18
On-Resistance vs. Junction Temperature
0.15
R
DS(on)
- On-Resistance (Ω)
I
S
-
Source
Current (A)
10
T
J
= 150 °C
I
D
= 3.8 A; T
J
= 25 °C
0.12
I
D
= 1 A; T
J
= 125 °C
I
D
= 3.8 A; T
J
= 125 °C
0.09
1
T
J
= 25 °C
0.06
I
D
= 1 A; T
J
= 25 °C
0.03
0.1
0
0.2
0.4
0.6
0.8
1.0
1.2
V
SD
-
Source-to-Drain
Voltage (V)
0.00
0
1
2
3
4
5
V
GS
-
Gate-to-Source
Voltage (V)
Source-Drain Diode Forward Voltage
0.75
20
On-Resistance vs. Gate-to-Source Voltage
0.65
15
Power (W)
V
GS(th)
(V)
0.55
I
D
= 250 μA
0.45
10
5
0.35
0.25
- 50
- 25
0
25
50
75
100
125
150
0
0.001
0.01
0.1
1
Pulse (s)
10
100
1000
T
J
- Temperature (°C)
Threshold Voltage
S13-2636-Rev. A, 30-Dec-13
Single Pulse Power, Junction-to-Ambient
Document Number: 62936
4
For technical questions, contact:
pmostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
SiA923AEDJ
www.vishay.com
TYPICAL CHARACTERISTICS
(25 °C, unless otherwise noted)
100
Vishay Siliconix
Limited by R
DS(on)
*
10
I
D
- Drain Current (A)
Limited by I
DM
100 μs
1
1 ms
10 ms
0.1
T
A
= 25 °C
Single
Pulse
BVDSS Limited
0.01
0.1
1
10
100
V
DS
- Drain-to-Source Voltage (V)
* V
GS
> minimum V
GS
at which R
DS(on)
is
specified
100 ms
1
s,
10
s
DC
Safe Operating Area, Junction-to-Ambient
12
8
10
I
D
- Drain Current (A)
Power Dissipation (W)
6
8
6
Package Limited
4
4
2
2
0
0
25
50
75
100
125
150
0
25
50
75
100
125
150
T
C
- Case Temperature (°C)
T
C
- Case Temperature (°C)
Current Derating*
Power Derating
* The power dissipation P
D
is based on T
J(max.)
= 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper
dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the
package limit.
S13-2636-Rev. A, 30-Dec-13
Document Number: 62936
5
For technical questions, contact:
pmostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
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