a. Surface mounted on 1" x 1" FR4 board with full copper, t = 5 s.
b. Surface mounted on 1" x 1" FR4 board with minimum copper, t = 5 s.
c. Refer to IPC/JEDEC
®
(J-STD-020), no manual or hand soldering.
d. Maximum under steady state conditions is 185 °C/W.
e. Maximum under steady state conditions is 330 °C/W.
S15-0346-Rev. B, 23-Feb-15
Document Number: 62834
1
For technical questions, contact:
pmostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
m
m
S
N-Channel MOSFET
Symbol
t
≤
5s
R
thJA
Typical
105
200
Maximum
135
260
Unit
°C/W
Si8816EDB
www.vishay.com
Vishay Siliconix
Symbol
V
DS
ΔV
DS
/T
J
ΔV
GS(th)
/T
J
V
GS(th)
I
GSS
I
DSS
I
D(on)
Test Conditions
V
GS
= 0 V, I
D
= 250 μA
I
D
= 250 μA
V
DS
= V
GS
, I
D
= 250 μA
V
DS
= 0 V, V
GS
= ± 4.5 V
V
DS
= 0 V, V
GS
= ± 12 V
V
DS
= 30 V, V
GS
= 0 V
V
DS
= 30 V, V
GS
= 0 V, T
J
= 55 °C
V
DS
≥
5 V, V
GS
= 10 V
V
GS
= 10 V, I
D
= 1 A
V
GS
= 4.5 V, I
D
= 1 A
V
GS
= 3.7 V, I
D
= 1 A
V
GS
= 2.5 V, I
D
= 0.5 A
V
DS
= 10 V, I
D
= 1 A
Min.
30
-
-
0.6
-
-
-
-
10
-
-
-
-
-
-
V
DS
= 15 V, V
GS
= 0 V, f = 1 MHz
V
DS
= 15 V, V
GS
= 10 V, I
D
= 1 A
V
DS
= 15 V, V
GS
= 4.5 V, I
D
= 1 A
f = 1 MHz
-
-
-
-
-
-
-
-
V
DD
= 15 V, R
L
= 15
Ω
I
D
≅
1 A, V
GEN
= 4.5 V, Rg = 1
Ω
-
-
-
-
V
DD
= 15 V, R
L
= 15
Ω
I
D
≅
1 A, V
GEN
= 10 V, R
g
= 1
Ω
-
-
-
T
C
= 25 °C
I
S
= 1 A, V
GS
= 0 V
-
-
-
-
I
F
= 1 A, dI/dt = 100 A/μs, T
J
= 25 °C
-
-
-
Typ.
-
30
-3.2
-
-
-
-
-
-
0.087
0.093
0.096
0.110
10
195
35
15
4.4
2.4
0.35
0.55
4
15
20
20
10
5
10
15
5
-
-
0.75
16
6
13.5
2.5
Max.
-
-
-
1.4
± 0.1
±1
1
10
-
0.109
0.116
0.123
0.142
-
-
-
-
8
4.5
-
-
-
30
40
40
20
10
20
30
10
0.7
8
1.2
30
12
-
-
ns
Ω
nC
pF
S
Ω
A
μA
Unit
V
mV/°C
V
SPECIFICATIONS
(T
J
= 25 °C, unless otherwise noted)
Parameter
Static
Drain-Source Breakdown Voltage
V
DS
Temperature Coefficient
V
GS(th)
Temperature Coefficient
Gate-Source Threshold Voltage
Gate-Source Leakage
Zero Gate Voltage Drain Current
On-State Drain Current
a
Drain-Source On-State Resistance
a
R
DS(on)
Forward Transconductance
a
Dynamic
b
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Gate Resistance
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Drain-Source Body Diode Characteristics
Continuous Source-Drain Diode Current
Pulse Diode Forward Current
Body Diode Voltage
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
Reverse Recovery Fall Time
Reverse Recovery Rise Time
g
fs
C
iss
C
oss
C
rss
Q
g
Q
gs
Q
gd
R
g
t
d(on)
t
r
t
d(off)
t
f
t
d(on)
t
r
t
d(off)
t
f
I
S
I
SM
V
SD
t
rr
Q
rr
t
a
t
b
A
V
ns
nC
ns
Note
a. Pulse test; pulse width
≤
300 μs, duty cycle
≤
2 %.
b. Guaranteed by design, not subject to production testing.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
S15-0346-Rev. B, 23-Feb-15
Document Number: 62834
2
For technical questions, contact:
pmostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
Si8816EDB
www.vishay.com
TYPICAL CHARACTERISTICS
(25 °C, unless otherwise noted)
1.4
1.2
I
GSS
-
Gate
Current (mA)
Vishay Siliconix
10
-2
10
-3
I
GSS
-
Gate
Current (A)
10
-4
10
-5
10
-6
10
-7
10
-8
10
-9
0
3
6
9
12
15
18
V
GS
-
Gate-to-Source
Voltage (V)
T
J
= 25
°C
T
J
= 150
°C
1.0
0.8
0.6
0.4
0.2
0
0
3
6
9
12
15
18
V
GS
-
Gate-Source
Voltage (V)
T
J
= 25
°C
Gate Current vs. Gate-Source Voltage
15
V
GS
= 5 V thru 2.5 V
12
6
8
Gate Current vs. Gate-Source Voltage
I
D
- Drain Current (A)
9
I
D
- Drain Current (A)
V
GS
= 2 V
4
6
V
GS
= 1.5 V
2
T
C
= 25
°C
T
C
= 125
°C
3
V
GS
= 1 V
0
0.0
0.5
1.0
1.5
2.0
2.5
3.0
V
DS
- Drain-to-Source Voltage (V)
0
0.0
0.5
T
C
= - 55
°C
1.0
1.5
2.0
2.5
V
GS
-
Gate-to-Source
Voltage (V)
Output Characteristics
0.18
250
Transfer Characteristics
R
DS(on)
- On-Resistance (Ω)
200
0.15
V
GS
= 3.7 V
V
GS
= 2.5 V
C - Capacitance (pF)
150
C
iss
0.12
100
0.09
V
GS
= 4.5 V
V
GS
= 10 V
50
C
rss
C
oss
0.06
0
2
4
I
D
- Drain Current (A)
6
8
0
0
5
10
15
20
25
30
V
DS
- Drain-to-Source Voltage (V)
On-Resistance vs. Drain Current
S15-0346-Rev. B, 23-Feb-15
Capacitance vs. Drain-to-Source Voltage
Document Number: 62834
3
For technical questions, contact:
pmostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
Si8816EDB
www.vishay.com
TYPICAL CHARACTERISTICS
(25 °C, unless otherwise noted)
8
10
Vishay Siliconix
V
GS
-
Gate-to-Source
Voltage (V)
I
D
= 1 A
6
V
DS
= 7.5 V
4
V
DS
= 15 V
I
S
-
Source
Current (A)
T
J
= 150
°C
1
T
J
= 25
°C
V
DS
= 24 V
2
0
0
1
2
3
4
Q
g
- Total
Gate
Charge (nC)
0.1
0.0
0.2
0.4
0.6
0.8
1.0
1.2
V
SD
-
Source-to-Drain
Voltage (V)
Gate Charge
1.6
R
DS(on)
- On-Resistance (Normalized)
1.5
1.4
1.1
1.3
V
GS(th)
(V)
1.2
1.1
1.0
0.8
0.9
0.8
0.7
- 50
0.7
0.6
- 25
0
25
50
75
100
125
150
- 50
1.0
0.9
V
GS
= 10 V, 4.5 V, 3.7 V, 2.5 V; I
D
= 1 A
1.3
1.2
Source-Drain Diode Forward Voltage
I
D
= 250 μA
- 25
0
25
50
75
100
125
150
T
J
- Junction Temperature (°C)
T
J
- Temperature (°C)
On-Resistance vs. Junction Temperature
Threshold Voltage
0.30
14
12
10
0.25
R
DS(on)
- On-Resistance (Ω)
I
D
= 1 A
0.20
Power (W)
5
8
6
4
0.15
T
J
= 125
°C
0.10
T
J
= 25
°C
0.05
0
1
2
3
4
V
GS
-
Gate-to-Source
Voltage (V)
2
0
0.001
0.01
0.1
1
Time (s)
10
100
1000
On-Resistance vs. Gate-to-Source Voltage
S15-0346-Rev. B, 23-Feb-15
Single Pulse Power (Junction-to-Ambient)
Document Number: 62834
4
For technical questions, contact:
pmostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
Si8816EDB
www.vishay.com
TYPICAL CHARACTERISTICS
(25 °C, unless otherwise noted)
10
Limited by R
DS(on)
*
100
µs
I
D
- Drain Current (A)
1
1 ms
Vishay Siliconix
0.1
T
A
= 25
°C
BVDSS Limited
0.01
0.1
100 ms
10
s
1
s,
10 ms
DC
1
10
100
V
DS
- Drain-to-Source Voltage (V)
* V
GS
> minimum V
GS
at which R
DS(on)
is
specified
Safe Operating Area, Junction-to-Ambient
2.5
0.8
2.0
1.5
Power Dissipation (W)
0
25
50
75
100
125
150
0.6
I
D
- Drain Current (A)
0.4
1.0
0.2
0.5
0.0
T
A
- Ambient Temperature (°C)
0.0
25
50
75
100
125
150
T
A
- Ambient Temperature (°C)
Current Derating*
Note
When mounted on 1" x 1" FR4 with full copper.
Power Derating
* The power dissipation P
D
is based on T
J
(max.) = 150 °C, using junction-to-ambient thermal resistance, and is more useful in settling the upper
dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the
package limit.
S15-0346-Rev. B, 23-Feb-15
Document Number: 62834
5
For technical questions, contact:
pmostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
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