VSMB2000X01, VSMB2020X01
www.vishay.com
Vishay Semiconductors
High Speed Infrared Emitting Diodes, 940 nm, GaAlAs, DH
VSMB2000X01
VSMB2020X01
FEATURES
• Package type: surface mount
• Package form: GW, RGW
• Dimensions (L x W x H in mm): 2.3 x 2.3 x 2.8
• AEC-Q101 qualified
• Peak wavelength:
p
= 940 nm
21725-4
• High reliability
• High radiant power
• High radiant intensity
• Angle of half intensity:
= ± 12°
• Low forward voltage
• Suitable for high pulse current operation
• Terminal configurations: gullwing or reserve gullwing
• Package matches with detector VEMD2000X01 series
• Floor life: 4 weeks, MSL 2a, acc. J-STD-020
• Compliant to RoHS Directive 2002/95/EC and in
accordance to WEEE 2002/96/EC
Note
**
Please see document “Vishay Material Category Policy”:
www.vishay.com/doc?99902
DESCRIPTION
VSMB2000X01 series are infrared, 940 nm emitting diodes
in GaAlAs (DH) technology with high radiant power and high
speed, molded in clear, untinted plastic packages (with lens)
for surface mounting (SMD).
APPLICATIONS
• IrDA compatible data transmission
• Miniature light barrier
• Photointerrupters
• Optical switch
• Control and drive circuits
• Shaft encoders
PRODUCT SUMMARY
COMPONENT
VSMB2000X01
VSMB2020X01
I
e
(mW/sr)
40
40
(deg)
± 12
± 12
P
(nm)
940
940
t
r
(ns)
15
15
Note
• Test conditions see table “Basic Characteristics“
ORDERING INFORMATION
ORDERING CODE
VSMB2000X01
VSMB2020X01
Note
• MOQ: minimum order quantity
PACKAGING
Tape and reel
Tape and reel
REMARKS
MOQ: 6000 pcs, 6000 pcs/reel
MOQ: 6000 pcs, 6000 pcs/reel
PACKAGE FORM
Reverse gullwing
Gullwing
ABSOLUTE MAXIMUM RATINGS
(T
amb
= 25 °C, unless otherwise specified)
PARAMETER
Reverse voltage
Forward current
Peak forward current
Surge forward current
Power dissipation
Junction temperature
Operating temperature range
Storage temperature range
Soldering temperature
Thermal resistance junction/ambient
Rev. 1.5, 23-Aug-11
t
5s
J-STD-051, leads 7 mm,
soldered on PCB
t
p
/T = 0.5, t
p
½
100 μs
t
p
= 100 μs
TEST CONDITION
SYMBOL
V
R
I
F
I
FM
I
FSM
P
V
T
j
T
amb
T
stg
T
sd
R
thJA
VALUE
5
100
200
1
160
100
- 40 to + 85
- 40 to + 100
260
250
UNIT
V
mA
mA
A
mW
°C
°C
°C
°C
K/W
Document Number: 81930
1
For technical questions, contact:
emittertechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
VSMB2000X01, VSMB2020X01
www.vishay.com
Vishay Semiconductors
180
120
100
80
60
P
V
- Power Dissipation (mW)
160
140
120
100
80
60
40
20
0
0
10
20 30
40
50
60
70 80
90
100
R
thJA
= 250 K/W
I
F
- Forward Current (mA)
R
thJA
= 250 K/W
40
20
0
0
10
20 30 40
50 60 70 80
90 100
21343
T
amb
- Ambient Temperature (°C)
21344
T
amb
- Ambient Temperature (°C)
Fig. 1 - Power Dissipation Limit vs. Ambient Temperature
Fig. 2 - Forward Current Limit vs. Ambient Temperature
BASIC CHARACTERISTICS
(T
amb
= 25 °C, unless otherwise specified)
PARAMETER
Forward voltage
Temperature coefficient of V
F
Reverse current
Junction capacitance
Radiant intensity
Radiant power
Temperature coefficient of radiant
power
Angle of half intensity
Peak wavelength
Spectral bandwidth
Temperature coefficient of
p
Rise time
Fall time
Cut-off frequency
Virtual source diameter
I
F
= 30 mA
I
F
= 30 mA
I
F
= 30 mA
I
F
= 100 mA, 20 % to 80 %
I
F
= 100 mA, 20 % to 80 %
I
DC
= 70 mA, I
AC
= 30 mA pp
TEST CONDITION
I
F
= 100 mA, t
p
= 20 ms
I
F
= 1 A, t
p
= 100 μs
I
F
= 1 mA
I
F
= 100 mA
V
R
= 5 V
V
R
= 0 V, f = 1 MHz, E = 0 mW/cm
2
I
F
= 100 mA, t
p
= 20 ms
I
F
= 1 A, t
p
= 100 μs
I
F
= 100 mA, t
p
= 20 ms
I
F
= 1 mA
I
F
= 100 mA
SYMBOL
V
F
V
F
TK
VF
TK
VF
I
R
C
J
I
e
I
e
e
TK
e
TK
e
p
TK
p
t
r
t
f
f
c
d
920
20
70
40
330
40
- 1.1
- 0.51
± 12
940
25
0.25
15
15
23
1.5
960
60
MIN.
1.15
TYP.
1.35
2.2
- 1.8
- 1.1
10
MAX.
1.6
UNIT
V
V
mV/K
mV/K
μA
pF
mW/sr
mW/sr
mW
%/K
%/K
deg
nm
nm
nm/K
ns
ns
MHz
mm
Rev. 1.5, 23-Aug-11
Document Number: 81930
2
For technical questions, contact:
emittertechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
VSMB2000X01, VSMB2020X01
www.vishay.com
BASIC CHARACTERISTICS
(T
amb
= 25 °C, unless otherwise specified)
1000
180
Vishay Semiconductors
I
e rel
- Relative Radiant Intensity (%)
I
F
= 1 mA
160
140
120
I
F
= 100 mA
100
80
60
t
p
= 20 ms
40
- 60 - 40 - 20
0
20
40
60
80
100
I
F
- Forward Current (mA)
100
10
t
p
= 100 µs
t
p
/T= 0.001
1
0
1
2
3
21534
V
F
- Forward Voltage (V)
21444
T
amb
- Ambient Temperature (°C)
Fig. 3 - Forward Current vs. Forward Voltage
Fig. 6 - Relative Radiant Intensity vs. Ambient Temperature
V
F, rel
- Relative Forward Voltage (%)
110
108
106
104
102
100
98
96
94
92
90
- 40
- 20
0
20
40
60
80
100
I
F
= 1 mA
t
p
= 20 ms
I
F
= 100 mA
I
F
= 10 mA
100
Φ
e rel
- Relative Radiant Power (%)
90
80
70
60
50
40
30
20
10
0
840
880
920
960
1000
1040
I
F
= 30 mA
21443
T
amb
- Ambient Temperature (°C)
21445
λ
- Wavelength (nm)
Fig. 4 - Relative Forward Voltage vs. Ambient Temperature
Fig. 7 - Relative Radiant Power vs. Wavelength
0°
1000
10°
20°
30°
I
e
- Radiant Intensity (mW/sr)
I
e rel
- Relative Radiant Intensity
100
40°
1.0
50°
0.9
60°
0.8
70°
0.7
80°
0.6
0.4
0.2
0
10
1
0.1
1
10
100
1000
21550
I
F
- Forward Current (mA)
Fig. 5 - Radiant Intensity vs. Forward Current
Fig. 8 - Relative Radiant Intensity vs. Angular Displacement
Rev. 1.5, 23-Aug-11
Document Number: 81930
3
For technical questions, contact:
emittertechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
ϕ
- Angular Displacement
t
p
= 100 µs
t
p
/T= 0.001
VSMB2000X01, VSMB2020X01
www.vishay.com
SOLDER PROFILE
300
250
255 °C
240 °C
217 °C
max. 260 °C
245 °C
Vishay Semiconductors
DRYPACK
Devices are packed in moisture barrier bags (MBB) to
prevent the products from moisture absorption during
transportation and storage. Each bag contains a desiccant.
FLOOR LIFE
Floor life (time between soldering and removing from MBB)
must not exceed the time indicated on MBB label:
Floor life: 4 weeks
Conditions: T
amb
< 30 °C, RH < 60 %
Moisture sensitivity level 2a, acc. to J-STD-020.
Temperature (°C)
200
max. 30 s
150
max. 120 s
100
50
0
0
50
100
150
200
250
300
max. ramp up 3 °C/s max. ramp down 6 °C/s
max. 100 s
DRYING
In case of moisture absorption devices should be baked
before soldering. Conditions see J-STD-020 or label.
Devices taped on reel dry using recommended conditions
192 h at 40 °C (+ 5 °C), RH < 5 %.
19841
Time (s)
Fig. 9 - Lead (Pb)-free Reflow Solder Profile acc. J-STD-020
PACKAGE DIMENSIONS
in millimeters:
VSMB2000
0.4
Ø 1.8 ± 0.1
0.05 ± 0.1
Z
0.19
2.77 ± 0.2
1.6
2.2
2.2
5.8 ± 0.2
Z 20:1
1.1 ± 0.1
2.3 ± 0.2
exposed copper
0.3
2.3 ± 0.2
0.5
Cathode
Pin ID
Anode
0.4
1.7
0.75
Solder
pad proposal
acc. IPC 7351
technical drawings
according to DIN
specifications
Not indicated tolerances ± 0.1
Ø 2.3 ± 0.1
6.7
Drawing-No.: 6.544-5391.02-4
Issue: 2; 18.03.10
21517
Rev. 1.5, 23-Aug-11
Document Number: 81930
4
For technical questions, contact:
emittertechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
0.254
VSMB2000X01, VSMB2020X01
www.vishay.com
PACKAGE DIMENSIONS
in millimeters:
VSMB2020
0.4
Ø 1.8
Vishay Semiconductors
2.77 ± 0.2
X
1.6
0.05
2.2
0.19
2.2
4.2 ± 0.2
exposed copper
0.3
X 20:1
2.3 ± 0.2
0.5
2.3 ± 0.2
0.4
0.6
Cathode
Pin ID
Anode
technical drawings
according to DIN
specifications
0.75
Solder pad proposal
acc. IPC 7351
Not indicated tolerances ± 0.1
2.45
5.15
Drawing-No.: 6.544-5383.02-4
Issue: 4; 18.03.10
21488
Rev. 1.5, 23-Aug-11
Document Number: 81930
5
For technical questions, contact:
emittertechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
0.254
嵌入式系统
京公网安备 11010802033920号
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved
电子工程世界
