Si2323CDS-T1-GE3 (Lead (Pb)-free and Halogen-free)
ABSOLUTE MAXIMUM RATINGS
(T
A
= 25 °C, unless otherwise noted)
Parameter
Drain-Source Voltage
Gate-Source Voltage
T
C
= 25 °C
Continuous Drain Current (T
J
= 150 °C)
T
C
= 70 °C
T
A
= 25 °C
T
A
= 70 °C
Pulsed Drain Current
Continuous Source-Drain Diode Current
T
C
= 25 °C
T
A
= 25 °C
T
C
= 25 °C
Maximum Power Dissipation
T
C
= 70 °C
T
A
= 25 °C
T
A
= 70 °C
Operating Junction and Storage Temperature Range
T
J
, T
stg
P
D
I
DM
I
S
I
D
Symbol
V
DS
V
GS
Limit
-20
±8
-6
e
-5.2
-4.6
b, c
-3.7
b, c
-20
-2.1
-1
b, c
2.5
1.6
1.25
b, c
0.8
b, c
-55 to 150
°C
W
A
Unit
V
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambient
b, d
5
s
Steady State
Symbol
R
thJA
R
thJF
Typical
75
40
Maximum
100
50
Unit
°C/W
Maximum Junction-to-Foot (Drain)
Notes:
a. Based on T
C
= 25 °C.
b. Surface mounted on 1" x 1" FR4 board.
c. t = 5 s.
d. Maximum under steady state conditions is 166 °C/W.
e. Package limited.
Document Number: 65700
S13-2081-Rev. B, 30-Sep-13
For technical questions, contact:
pmostechsupport@vishay.com
www.vishay.com
1
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
Si2323CDS
Vishay Siliconix
MOSFET SPECIFICATIONS
(T
J
= 25 °C, unless otherwise noted)
Parameter
Static
Drain-Source Breakdown Voltage
V
DS
Temperature Coefficient
V
GS(th)
Temperature Coefficient
Gate-Source Threshold Voltage
Gate-Source Leakage
Zero Gate Voltage Drain Current
On-State Drain Current
a
Drain-Source On-State Resistance
a
Forward Transconductance
a
Dynamic
b
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Gate Resistance
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Drain-Source Body Diode Characteristics
Continuous Source-Drain Diode Current
Pulse Diode Forward Current
a
Body Diode Voltage
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
Reverse Recovery Fall Time
Reverse Recovery Rise Time
I
S
I
SM
V
SD
t
rr
Q
rr
t
a
t
b
I
F
= -3.7 A, dI/dt = 100 A/µs, T
J
= 25 °C
I
S
= -3.7 A
-0.8
30
20
17
13
T
C
= 25 °C
-2.1
-20
-1.2
45
40
A
V
ns
nC
ns
C
iss
C
oss
C
rss
Q
g
Q
gs
Q
gd
R
g
t
d(on)
t
r
t
d(off)
t
f
V
DD
= -10 V, R
L
= 2.7
I
D
= -3.7 A, V
GEN
= -4.5 V, R
g
= 1
f = 1 MHz
0.8
V
DS
= -10 V, V
GS
= -4.5 V, I
D
= -4.6 A
V
DS
= -10 V, V
GS
= -2.5 V, I
D
= -4.6 A
V
DS
= -10 V, V
GS
= 0 V, f = 1 MHz
1090
155
135
16
9.3
2.5
3.2
4.1
15
23
40
12
8.2
23
35
60
20
ns
25
15
nC
pF
V
DS
V
DS
/T
J
V
GS(th)
/T
J
V
GS(th)
I
GSS
I
DSS
I
D(on)
R
DS(on)
g
fs
V
DS
= 0 V, I
D
= -250 µA
I
D
= -250 µA
V
DS
= V
GS
, I
D
= -250 µA
V
DS
= 0 V, V
GS
= ± 8 V
V
DS
= -20 V, V
GS
= 0 V
V
DS
= -20 V, V
GS
= 0 V, T
J
= 55 °C
V
DS
-5
V, V
GS
= -4.5 V
V
GS
= -4.5 V, I
D
= -4.6 A
V
GS
= -2.5 V, I
D
= -4.1 A
V
GS
= -1.8 V, I
D
= -3.6 A
V
DS
= -5 V, I
D
= -4.6 A
-20
0.032
0.041
0.050
20
0.039
0.050
0.063
S
-0.4
-20
-14
2.4
-1
± 100
-1
-10
V
mV/°C
V
nA
µA
A
Symbol
Test Conditions
Min.
Typ.
Max.
Unit
Notes:
a. Pulse test; pulse width
300 µs, duty cycle
2 %.
b. Guaranteed by design, not subject to production testing.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
www.vishay.com
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For technical questions, contact:
pmostechsupport@vishay.com
Document Number: 65700
S13-2081-Rev. B, 30-Sep-13
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
Si2323CDS
Vishay Siliconix
TYPICAL CHARACTERISTICS
(25 °C, unless otherwise noted)
20
V
GS
= 5
V
thru 2
V
15
I
D
- Drain Current (A)
I
D
- Drain Current (A)
3
T
C
= 125 °C
2
T
C
= 25 °C
1
T
C
= - 55 °C
V
GS
= 1
V
0
0.0
0.5
1.0
1.5
2.0
0
0.0
0.3
0.6
0.9
1.2
1.5
4
10
V
GS
= 1.5
V
5
V
DS
- Drain-to-Source
Voltage
(V)
V
DS
- Gate-to-Source
Voltage
(V)
Output Characteristics
0.10
2250
C
iss
R
DS(on)
- On-Resistance (Ω)
0.08
C - Capacitance (pF)
V
GS
= 1.8
V
0.06
V
GS
= 2.5
V
0.04
V
GS
= 4.5
V
0.02
450
C
rss
0.00
0
5
10
I
D
- Drain Current (A)
15
20
0
0
1800
Transfer Characteristics
1350
900
C
oss
5
10
15
20
V
DS
- Drain-to-Source
Voltage
(V)
On-Resistance vs. Drain Current and Gate Voltage
5
I
D
= 4.6 A
V
GS
- Gate-to-Source
Voltage
(V)
4
R
DS(on)
- On-Resistance
(Normalized)
V
DS
= 10
V
3
V
DS
= 5
V
2
V
DS
= 16
V
1.4
1.6
Capacitance
V
GS
= 4.5
V,
I
D
= 4.6 A
V
GS
= 2.5
V,
I
D
= 4.1 A
1.2
1.0
1
0.8
0
0
4
8
12
16
20
0.6
- 50
- 25
0
25
50
75
100
125
150
Q
g
- Total Gate Charge (nC)
T
J
- Junction Temperature (°C)
Gate Charge
On-Resistance vs. Junction Temperature
Document Number: 65700
S13-2081-Rev. B, 30-Sep-13
For technical questions, contact:
pmostechsupport@vishay.com
www.vishay.com
3
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
Si2323CDS
Vishay Siliconix
TYPICAL CHARACTERISTICS
(25 °C, unless otherwise noted)
100
0.15
I
D
= 4.6 A
R
DS(on)
- On-Resistance (Ω)
0.12
I
S
- Source Current (A)
10
0.09
T
J
= 150 °C
1
T
J
= 25 °C
0.06
T
J
= 125 °C
0.03
T
J
= 25 °C
0.1
0.0
0.3
0.6
0.9
1.2
0.00
0
1
2
3
4
5
V
SD
- Source-to-Drain
Voltage
(V)
V
GS
- Gate-to-Source
Voltage
(V)
Source-Drain Diode Forward Voltage
0.8
I
D
= 250
µA
0.7
8
0.6
V
GS(th)
(V)
Power (W)
6
10
On-Resistance vs. Gate-to-Source Voltage
0.5
4
0.4
2
T
A
= 25 °C
0.3
0.2
- 50
- 25
0
25
50
75
100
125
150
0
0.01
0.1
1
Time (s)
10
100
1000
T
J
- Temperature (°C)
Threshold Voltage
100
Limited
by
R
DS(on)
*
10
I
D
- Drain Current (A)
100
µs
1 ms
1
10 ms
100 ms
0.1
T
A
= 25 °C
Single Pulse
0.01
0.1
BVDSS
Limited
1s
10 s, DC
Single Pulse Power
1
10
100
V
DS
- Drain-to-Source
Voltage
(V)
*
V
GS
> minimum
V
GS
at
which
R
DS(on)
is specified
Safe Operating Area
www.vishay.com
4
For technical questions, contact:
pmostechsupport@vishay.com
Document Number: 65700
S13-2081-Rev. B, 30-Sep-13
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
Si2323CDS
Vishay Siliconix
TYPICAL CHARACTERISTICS
(25 °C, unless otherwise noted)
8
6
I
D
- Drain Current (A)
Package Limited
4
2
0
0
25
50
75
100
125
150
T
C
- Case Temperature (°C)
Current Derating*
3.0
1.0
2.5
0.8
2.0
Power (W)
Power (W)
0
25
50
75
100
125
150
0.6
1.5
0.4
1.0
0.2
0.5
0.0
0.0
0
25
50
75
100
125
150
T
C
- Case Temperature (°C)
T
A
- Ambient Temperature (°C)
Power, Junction-to-Foot
Power, Junction-to-Ambient
* The power dissipation P
D
is based on T
J(max.)
= 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper
dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package
limit.
Document Number: 65700
S13-2081-Rev. B, 30-Sep-13
For technical questions, contact:
pmostechsupport@vishay.com
www.vishay.com
5
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
与云数据库相比，小型计算机是专门为网络边缘的去中心化坚固计算而构建的。通过将应用程序、分析和处理服务移动到更靠近数据生成源的位置，业务运营可以获得改进的实时计算应用程序性能。 l 从奔腾到酷睿i5的可扩展CPU性能 l 智能电源点火管理和CAN总线网络支持 l 无线局域网和广域网LTE连接 l 丰富的I/O可扩展性，包括PoE、PCI、PCIe、COM l 适用于宽工作温度和宽电压输入的坚固...[详细]
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